JPS55154764A - Heat-sensitive switching device - Google Patents

Heat-sensitive switching device

Info

Publication number
JPS55154764A
JPS55154764A JP6341279A JP6341279A JPS55154764A JP S55154764 A JPS55154764 A JP S55154764A JP 6341279 A JP6341279 A JP 6341279A JP 6341279 A JP6341279 A JP 6341279A JP S55154764 A JPS55154764 A JP S55154764A
Authority
JP
Japan
Prior art keywords
thyristor
region
type
longitudinal
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6341279A
Other languages
Japanese (ja)
Inventor
Yutaka Mihashi
Yorisuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6341279A priority Critical patent/JPS55154764A/en
Publication of JPS55154764A publication Critical patent/JPS55154764A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To switch ON or OFF by temperature and DC power source in a heat- sensitive switching device by forming lateral and longitudinal pnpn thyristor in the same semiconductor substrate, connecting a load through an external power source and a diode to the lateral thyristor and controlling it with the longitudinal thyristor. CONSTITUTION:A p-type emitter region 4, a p-type base region 6 and an n-type emitter region 8 disposed therein are formed in a common n-type Si substrate 1 becoming the n-type base region 3 of the lateral thyristor A to form a lateral thyristor A. Then, a layer 2 becoming the n-type emitter region of longitudinal thyristor B is diffused and formed on the back surface of the substrate 1, and a p-type base region 6 is formed while contacting the thyristor A and n-type emitter region 8 and n-type base region 12, and a p-type emitter region 14 are formed in the region 3 disposed thereon to form a longitudinal thyristor B. In this manner, a load is connected through the external power source 23 and a diode 24 to the thyristor A, and the part of the circuit is connected to the region 14.
JP6341279A 1979-05-21 1979-05-21 Heat-sensitive switching device Pending JPS55154764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6341279A JPS55154764A (en) 1979-05-21 1979-05-21 Heat-sensitive switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6341279A JPS55154764A (en) 1979-05-21 1979-05-21 Heat-sensitive switching device

Publications (1)

Publication Number Publication Date
JPS55154764A true JPS55154764A (en) 1980-12-02

Family

ID=13228542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6341279A Pending JPS55154764A (en) 1979-05-21 1979-05-21 Heat-sensitive switching device

Country Status (1)

Country Link
JP (1) JPS55154764A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461252A (en) * 1992-10-06 1995-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers
EP0821410A1 (en) * 1996-07-26 1998-01-28 STMicroelectronics S.A. Monolithic device associating a high-voltage device and logic devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461252A (en) * 1992-10-06 1995-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers
EP0821410A1 (en) * 1996-07-26 1998-01-28 STMicroelectronics S.A. Monolithic device associating a high-voltage device and logic devices
FR2751789A1 (en) * 1996-07-26 1998-01-30 Sgs Thomson Microelectronics MONOLITHIC COMPONENT COMBINING A HIGH VOLTAGE COMPONENT AND LOGIC COMPONENTS
US5982016A (en) * 1996-07-26 1999-11-09 Sgs-Thomson Microelectronics S.A. Monolithic component associating a high-voltage component and logic components

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