JPS5678164A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS5678164A JPS5678164A JP15430779A JP15430779A JPS5678164A JP S5678164 A JPS5678164 A JP S5678164A JP 15430779 A JP15430779 A JP 15430779A JP 15430779 A JP15430779 A JP 15430779A JP S5678164 A JPS5678164 A JP S5678164A
- Authority
- JP
- Japan
- Prior art keywords
- region
- phosphorus
- life
- time
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012216 screening Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To improve ON-OFF characteristics by method wherein a life-time killer such as Au is cover-attached on a region separator of a compound semiconductor element of a bi-lateral thyristor or the like and heat treated in an atmosphere containing phosphrous, and only the region separator is made low in the life time. CONSTITUTION:A PNP structure is formed of a P type layer 12, a P type layer 13 in contrast with that and an N type substrate 11 which become an emitter layer in the first active region and a base layer in the second active region. Then, a heat- oxidized film 14 capable of screening the phosphorus is grown on both sides of the face and the back of the PNP structure, openings 15 and 16 respectively are formed on the surface and the back and the phosphorus is diffused to form the N type emitter regions 17 and 18 respectively. Thus, the PNPN structure is formed in which the two active regions a and b are provided with the region separator c interted therebetween, the Au 31 is attached onto the region c and heat-treated in the atmosphere containing the phosphorus to reduce the life time only of the region c and to prolong the life times of the regions a and b. In such a manner, the withstand dv/dt at the time of commutating is increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15430779A JPS5678164A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15430779A JPS5678164A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5678164A true JPS5678164A (en) | 1981-06-26 |
Family
ID=15581250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15430779A Pending JPS5678164A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5678164A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02125666A (en) * | 1988-11-04 | 1990-05-14 | Sharp Corp | Photo triac |
EP4386857A1 (en) * | 2022-12-15 | 2024-06-19 | Littelfuse Semiconductor (Wuxi) Co., Ltd. | A triac device with high commutating capability |
-
1979
- 1979-11-30 JP JP15430779A patent/JPS5678164A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02125666A (en) * | 1988-11-04 | 1990-05-14 | Sharp Corp | Photo triac |
EP4386857A1 (en) * | 2022-12-15 | 2024-06-19 | Littelfuse Semiconductor (Wuxi) Co., Ltd. | A triac device with high commutating capability |
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