JPS5561058A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5561058A
JPS5561058A JP13423378A JP13423378A JPS5561058A JP S5561058 A JPS5561058 A JP S5561058A JP 13423378 A JP13423378 A JP 13423378A JP 13423378 A JP13423378 A JP 13423378A JP S5561058 A JPS5561058 A JP S5561058A
Authority
JP
Japan
Prior art keywords
layer
electrode
diode
base
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13423378A
Other languages
Japanese (ja)
Inventor
Masami Iwasaki
Susumu Yasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13423378A priority Critical patent/JPS5561058A/en
Publication of JPS5561058A publication Critical patent/JPS5561058A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To miniaturize a device by fixing a PN junction element piece for shortening a switching time on a Darlington transistor circuit small piece. CONSTITUTION:An N-type collector layer 10 is provided with an electrode to form N-type emitter layers 13, 14 on a P-layer 12 surface on a layer 10. On the layer 12, a base electrode 15 and a wiring connecting layers 12, 13, and also on a layer 14 an emitter electrode 17 are formed. A hole 19 is made on a part where the wiring 16 is facing the layer 13, a gold foil is picked up and put to the P-layer 21 of a diode 20 being heated and pressed against to make an Au-Si alloy layer 22, while the N-layer 23 of the diode is provided with an electrode 24 being connected 25 with the base electrode 15. According to said constitution the diode 20 is reversely parallel connected between the emitter and the base of the transistor said in the foregoing paragraph, the base plate area can be reduced as much as a portion on which the diode 20 is to be fixed, thus to miniaturize the device.
JP13423378A 1978-10-31 1978-10-31 Semiconductor device Pending JPS5561058A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13423378A JPS5561058A (en) 1978-10-31 1978-10-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13423378A JPS5561058A (en) 1978-10-31 1978-10-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5561058A true JPS5561058A (en) 1980-05-08

Family

ID=15123530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13423378A Pending JPS5561058A (en) 1978-10-31 1978-10-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5561058A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50147676A (en) * 1974-05-15 1975-11-26
JPS5272183A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Semiconductor device with protecting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50147676A (en) * 1974-05-15 1975-11-26
JPS5272183A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Semiconductor device with protecting device

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