JPS5339889A - Semiconductor device and its production - Google Patents
Semiconductor device and its productionInfo
- Publication number
- JPS5339889A JPS5339889A JP11369676A JP11369676A JPS5339889A JP S5339889 A JPS5339889 A JP S5339889A JP 11369676 A JP11369676 A JP 11369676A JP 11369676 A JP11369676 A JP 11369676A JP S5339889 A JPS5339889 A JP S5339889A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- small power
- injection
- normality
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the injection of ineffective carriers, increase the current gain of a lateral PNP transistor and obtain an I<2>L of small power consumption, high operating speed and small power-delay product by forming an insulation layer on the bottom surface other than the PN junction lateral surface part where carrier injection is accomplished in normality.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11369676A JPS5339889A (en) | 1976-09-24 | 1976-09-24 | Semiconductor device and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11369676A JPS5339889A (en) | 1976-09-24 | 1976-09-24 | Semiconductor device and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5339889A true JPS5339889A (en) | 1978-04-12 |
Family
ID=14618851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11369676A Pending JPS5339889A (en) | 1976-09-24 | 1976-09-24 | Semiconductor device and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5339889A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097670A (en) * | 1983-11-02 | 1985-05-31 | Hitachi Ltd | Semiconductor device |
JPS6224670A (en) * | 1985-01-30 | 1987-02-02 | テキサス インスツルメンツ インコ−ポレイテツド | Bipolar transistor and making thereof |
US9108308B2 (en) | 2011-11-14 | 2015-08-18 | Panasonic Intellectual Property Management Co., Ltd. | Switch operation device |
-
1976
- 1976-09-24 JP JP11369676A patent/JPS5339889A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097670A (en) * | 1983-11-02 | 1985-05-31 | Hitachi Ltd | Semiconductor device |
JPS6224670A (en) * | 1985-01-30 | 1987-02-02 | テキサス インスツルメンツ インコ−ポレイテツド | Bipolar transistor and making thereof |
US9108308B2 (en) | 2011-11-14 | 2015-08-18 | Panasonic Intellectual Property Management Co., Ltd. | Switch operation device |
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