JPS5688361A - Static induction type reverse conductivity thyristor - Google Patents
Static induction type reverse conductivity thyristorInfo
- Publication number
- JPS5688361A JPS5688361A JP16618279A JP16618279A JPS5688361A JP S5688361 A JPS5688361 A JP S5688361A JP 16618279 A JP16618279 A JP 16618279A JP 16618279 A JP16618279 A JP 16618279A JP S5688361 A JPS5688361 A JP S5688361A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- thyristor
- substrate
- static induction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006698 induction Effects 0.000 title abstract 2
- 230000003068 static effect Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- 238000002955 isolation Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To obtain a static induction type reverse conductivity type thyristor having low ON voltage while simplifying the configuration by forming a diode for surrounding the thyristor in a semicouductor substrate when forming the thyristor on the substrate. CONSTITUTION:An n<+> type layer 11 is formed on the back surface of n type or i type Si substrate 10, a p<+> type region 12 is diffused therein, an n<+> type region 13 is formed on the surface of the substrate 10, and a ring-shaped p<+> type region 14 is diffused in the region confronting the region 12 and surrounding it. Similarly, a ring-shaped p<+> type region 15 is formed without confronting the region 12 at the peripheral edge of the surface of the substrate 10, the regions 15, 13 are connected, a common terminal 2' is mounted thereon, a control terminal 3' is mounted on the region 14, and a common terminal 1' is mounted on the region 12 with the layer 11. Thus, a diode region 31 having p<+>-n(i)-n<+> architecture is formed from the surface, and thyristor 33 having p<+>-n<+>-n(i)-n<+> and p<+> architectures is formed from the back surface through the isolation band 32.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16618279A JPS6050067B2 (en) | 1979-12-20 | 1979-12-20 | Electrostatic induction type reverse conducting thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16618279A JPS6050067B2 (en) | 1979-12-20 | 1979-12-20 | Electrostatic induction type reverse conducting thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5688361A true JPS5688361A (en) | 1981-07-17 |
JPS6050067B2 JPS6050067B2 (en) | 1985-11-06 |
Family
ID=15826588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16618279A Expired JPS6050067B2 (en) | 1979-12-20 | 1979-12-20 | Electrostatic induction type reverse conducting thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6050067B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6276769A (en) * | 1985-09-30 | 1987-04-08 | Toyota Central Res & Dev Lab Inc | Static induction type thyristor |
US4982258A (en) * | 1988-05-02 | 1991-01-01 | General Electric Company | Metal oxide semiconductor gated turn-off thyristor including a low lifetime region |
-
1979
- 1979-12-20 JP JP16618279A patent/JPS6050067B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6276769A (en) * | 1985-09-30 | 1987-04-08 | Toyota Central Res & Dev Lab Inc | Static induction type thyristor |
US4982258A (en) * | 1988-05-02 | 1991-01-01 | General Electric Company | Metal oxide semiconductor gated turn-off thyristor including a low lifetime region |
Also Published As
Publication number | Publication date |
---|---|
JPS6050067B2 (en) | 1985-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54157092A (en) | Semiconductor integrated circuit device | |
JPS51135373A (en) | Semiconductor device | |
JPS5688361A (en) | Static induction type reverse conductivity thyristor | |
JPS5269589A (en) | Semiconductor capacity element | |
JPS5533075A (en) | Mesa semiconductor device | |
JPS5642367A (en) | Manufacture of bipolar integrated circuit | |
JPS57128953A (en) | Manufacture of semiconductor integrated circuit | |
JPS533075A (en) | Production of mos structure field effect semiconductor device | |
JPS54100675A (en) | Three-terminal two-way thyristor | |
JPS54111287A (en) | Resin seal planar-structure semiconductor element | |
JPS5660049A (en) | Manufacture of semiconductor integrated circuit device | |
GB916379A (en) | Improvements in and relating to semiconductor junction units | |
JPS5248986A (en) | Semiconductor temperature sensitive switch element | |
JPS545392A (en) | Semiconductor integrated circuit and its manufacture | |
JPS5613761A (en) | Preparation of semiconductor device | |
JPS5676582A (en) | Semiconductor device | |
JPS5289473A (en) | Transistor | |
JPS55125678A (en) | Zener diode | |
JPS5618466A (en) | Manufacture of semiconductor device | |
JPS5658260A (en) | Darlington junction type transistor and production thereof | |
JPS5678164A (en) | Manufacture of semiconductor element | |
JPS5681978A (en) | Thyristor | |
JPS5678127A (en) | Manufacture of semiconductor device | |
JPS54149485A (en) | Electrostatic induction transistor integrated circuit | |
JPS6466963A (en) | Semiconductor integrated circuit |