JPS5676582A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5676582A
JPS5676582A JP15543379A JP15543379A JPS5676582A JP S5676582 A JPS5676582 A JP S5676582A JP 15543379 A JP15543379 A JP 15543379A JP 15543379 A JP15543379 A JP 15543379A JP S5676582 A JPS5676582 A JP S5676582A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor device
mesa
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15543379A
Other languages
Japanese (ja)
Inventor
Takeshi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15543379A priority Critical patent/JPS5676582A/en
Publication of JPS5676582A publication Critical patent/JPS5676582A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To increase the withstand voltage of a semiconductor device by forming a semiconductor layer of the same conductivity type as a surface diffused layer in the groove of a mesa-structure diode around the surface diffused layer. CONSTITUTION:A p type layer 6 surrounding p type layer 2b and p type layer 2b are formed by selective diffusion on the surface of an n type semiconductor substrate 1. The end of the substrate 1 is selectively etched and removed, and a groove 4a is formed, and a mesa-structure diode is thus formed. The layer 6 operates as the guard ring, thereby enhancing the withstand voltage of the element.
JP15543379A 1979-11-27 1979-11-27 Semiconductor device Pending JPS5676582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15543379A JPS5676582A (en) 1979-11-27 1979-11-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15543379A JPS5676582A (en) 1979-11-27 1979-11-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5676582A true JPS5676582A (en) 1981-06-24

Family

ID=15605909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15543379A Pending JPS5676582A (en) 1979-11-27 1979-11-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5676582A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10051644B4 (en) * 2000-02-23 2004-03-25 Mitsubishi Denki K.K. Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10051644B4 (en) * 2000-02-23 2004-03-25 Mitsubishi Denki K.K. Semiconductor device

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