JPS6435951A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6435951A
JPS6435951A JP19074087A JP19074087A JPS6435951A JP S6435951 A JPS6435951 A JP S6435951A JP 19074087 A JP19074087 A JP 19074087A JP 19074087 A JP19074087 A JP 19074087A JP S6435951 A JPS6435951 A JP S6435951A
Authority
JP
Japan
Prior art keywords
forming
substrate surface
pnp transistor
lateral pnp
emitter region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19074087A
Other languages
Japanese (ja)
Inventor
Hideyuki Kihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP19074087A priority Critical patent/JPS6435951A/en
Publication of JPS6435951A publication Critical patent/JPS6435951A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the current amplification factor of a bipolar type lateral PNP transistor by forming a recess in the substrate surface, forming the emitter region of the bipolar type lateral PNP transistor, and forming the collector and base regions in the substrate surface other than the emitter region. CONSTITUTION:A recess 10 is provided in the semiconductor substrate surface, an emitter region 6 of a bipolar type lateral PNP transistor is formed in the inner surface of the recess, and the collector and base regions 5, 7 are formed in the semiconductor substrate surface other than the region 6. With this, since the emitter region layer approaches an N-type buried layer without forming the N-type buried layer twice, the diffusion current component immediately below the emitter decreases, thereby increasing the current amplification factor of the bipolar type lateral PNP transistor.
JP19074087A 1987-07-30 1987-07-30 Semiconductor device Pending JPS6435951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19074087A JPS6435951A (en) 1987-07-30 1987-07-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19074087A JPS6435951A (en) 1987-07-30 1987-07-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6435951A true JPS6435951A (en) 1989-02-07

Family

ID=16262975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19074087A Pending JPS6435951A (en) 1987-07-30 1987-07-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6435951A (en)

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