JPS5351964A - Selective growth method for semiconductor crystal - Google Patents

Selective growth method for semiconductor crystal

Info

Publication number
JPS5351964A
JPS5351964A JP12705576A JP12705576A JPS5351964A JP S5351964 A JPS5351964 A JP S5351964A JP 12705576 A JP12705576 A JP 12705576A JP 12705576 A JP12705576 A JP 12705576A JP S5351964 A JPS5351964 A JP S5351964A
Authority
JP
Japan
Prior art keywords
selective growth
semiconductor crystal
growth method
melting point
metallic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12705576A
Other languages
Japanese (ja)
Other versions
JPS5821820B2 (en
Inventor
Osamu Ishihara
Mutsuyuki Otsubo
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP51127055A priority Critical patent/JPS5821820B2/en
Publication of JPS5351964A publication Critical patent/JPS5351964A/en
Publication of JPS5821820B2 publication Critical patent/JPS5821820B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To easily obtain the selective growth layer with a good uniformity, by making crystal growth thru the provision of the low melting point metallic layer and high melting point metallic layer on the substrate of chemical semiconductor.
COPYRIGHT: (C)1978,JPO&Japio
JP51127055A 1976-10-21 1976-10-21 Selective growth method for semiconductor crystals Expired JPS5821820B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51127055A JPS5821820B2 (en) 1976-10-21 1976-10-21 Selective growth method for semiconductor crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51127055A JPS5821820B2 (en) 1976-10-21 1976-10-21 Selective growth method for semiconductor crystals

Publications (2)

Publication Number Publication Date
JPS5351964A true JPS5351964A (en) 1978-05-11
JPS5821820B2 JPS5821820B2 (en) 1983-05-04

Family

ID=14950473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51127055A Expired JPS5821820B2 (en) 1976-10-21 1976-10-21 Selective growth method for semiconductor crystals

Country Status (1)

Country Link
JP (1) JPS5821820B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203963A (en) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd Method of manufacturing semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6340820A (en) * 1986-08-06 1988-02-22 Olympia Kogyo Kk Flow rate detector
GB2205947B (en) * 1987-06-19 1991-09-04 British Gas Plc Flowmeter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203963A (en) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS5821820B2 (en) 1983-05-04

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