JPS5467376A - Production of plastic molded type semiconductor device - Google Patents

Production of plastic molded type semiconductor device

Info

Publication number
JPS5467376A
JPS5467376A JP13450677A JP13450677A JPS5467376A JP S5467376 A JPS5467376 A JP S5467376A JP 13450677 A JP13450677 A JP 13450677A JP 13450677 A JP13450677 A JP 13450677A JP S5467376 A JPS5467376 A JP S5467376A
Authority
JP
Japan
Prior art keywords
frame
electrolytic
cathode
bath
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13450677A
Other languages
Japanese (ja)
Other versions
JPS6034811B2 (en
Inventor
Noriyuki Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13450677A priority Critical patent/JPS6034811B2/en
Publication of JPS5467376A publication Critical patent/JPS5467376A/en
Publication of JPS6034811B2 publication Critical patent/JPS6034811B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE: To facilitate deburring of resin from the frame through utilization of synergistic effects of action of degreasing agent and action of O2 or H2 generated from the frame, by using the lead frame after resin mold sealing as the anode or cathode, and energizing in an electrolytic degreasing bath.
CONSTITUTION: An electrolytic degreasing agent containing 5% of caustic soda and 1 % of surface active agent is diluted in a solution bath to a concentration of 100g/l, and the bath temperature is controlled at 50°C, and electric power is fed for 10 minutes, keeping the electrolytic voltage at 5V and current density of cathode at 3A/cm2. When the lead frame is thus electrolytic-degreased, thin burrs formed in the frame are almost completely separated and removed. When electrolytic degreasing is performed by replacing the cathode with the anode, the separation effect is lowered, but the similar effect may be maintained if the current density is doubled to 6A/cm2. Using this method, mass processing is possible without causing deformation or damage on the frame.
COPYRIGHT: (C)1979,JPO&Japio
JP13450677A 1977-11-08 1977-11-08 Manufacturing method for resin-sealed semiconductor device Expired JPS6034811B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13450677A JPS6034811B2 (en) 1977-11-08 1977-11-08 Manufacturing method for resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13450677A JPS6034811B2 (en) 1977-11-08 1977-11-08 Manufacturing method for resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPS5467376A true JPS5467376A (en) 1979-05-30
JPS6034811B2 JPS6034811B2 (en) 1985-08-10

Family

ID=15129905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13450677A Expired JPS6034811B2 (en) 1977-11-08 1977-11-08 Manufacturing method for resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS6034811B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188830A (en) * 1981-05-16 1982-11-19 Toshiba Corp Removing method for resin burr of semiconductor device
JPS63181337A (en) * 1987-01-22 1988-07-26 Mitsubishi Electric Corp Elimination of resin burr of resin-molded lead frame and its equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188830A (en) * 1981-05-16 1982-11-19 Toshiba Corp Removing method for resin burr of semiconductor device
JPH0223026B2 (en) * 1981-05-16 1990-05-22 Tokyo Shibaura Electric Co
JPS63181337A (en) * 1987-01-22 1988-07-26 Mitsubishi Electric Corp Elimination of resin burr of resin-molded lead frame and its equipment

Also Published As

Publication number Publication date
JPS6034811B2 (en) 1985-08-10

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