JPS5467376A - Production of plastic molded type semiconductor device - Google Patents
Production of plastic molded type semiconductor deviceInfo
- Publication number
- JPS5467376A JPS5467376A JP13450677A JP13450677A JPS5467376A JP S5467376 A JPS5467376 A JP S5467376A JP 13450677 A JP13450677 A JP 13450677A JP 13450677 A JP13450677 A JP 13450677A JP S5467376 A JPS5467376 A JP S5467376A
- Authority
- JP
- Japan
- Prior art keywords
- frame
- electrolytic
- cathode
- bath
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
PURPOSE: To facilitate deburring of resin from the frame through utilization of synergistic effects of action of degreasing agent and action of O2 or H2 generated from the frame, by using the lead frame after resin mold sealing as the anode or cathode, and energizing in an electrolytic degreasing bath.
CONSTITUTION: An electrolytic degreasing agent containing 5% of caustic soda and 1 % of surface active agent is diluted in a solution bath to a concentration of 100g/l, and the bath temperature is controlled at 50°C, and electric power is fed for 10 minutes, keeping the electrolytic voltage at 5V and current density of cathode at 3A/cm2. When the lead frame is thus electrolytic-degreased, thin burrs formed in the frame are almost completely separated and removed. When electrolytic degreasing is performed by replacing the cathode with the anode, the separation effect is lowered, but the similar effect may be maintained if the current density is doubled to 6A/cm2. Using this method, mass processing is possible without causing deformation or damage on the frame.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13450677A JPS6034811B2 (en) | 1977-11-08 | 1977-11-08 | Manufacturing method for resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13450677A JPS6034811B2 (en) | 1977-11-08 | 1977-11-08 | Manufacturing method for resin-sealed semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5467376A true JPS5467376A (en) | 1979-05-30 |
JPS6034811B2 JPS6034811B2 (en) | 1985-08-10 |
Family
ID=15129905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13450677A Expired JPS6034811B2 (en) | 1977-11-08 | 1977-11-08 | Manufacturing method for resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6034811B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57188830A (en) * | 1981-05-16 | 1982-11-19 | Toshiba Corp | Removing method for resin burr of semiconductor device |
JPS63181337A (en) * | 1987-01-22 | 1988-07-26 | Mitsubishi Electric Corp | Elimination of resin burr of resin-molded lead frame and its equipment |
-
1977
- 1977-11-08 JP JP13450677A patent/JPS6034811B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57188830A (en) * | 1981-05-16 | 1982-11-19 | Toshiba Corp | Removing method for resin burr of semiconductor device |
JPH0223026B2 (en) * | 1981-05-16 | 1990-05-22 | Tokyo Shibaura Electric Co | |
JPS63181337A (en) * | 1987-01-22 | 1988-07-26 | Mitsubishi Electric Corp | Elimination of resin burr of resin-molded lead frame and its equipment |
Also Published As
Publication number | Publication date |
---|---|
JPS6034811B2 (en) | 1985-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES8302806A1 (en) | High current density, acid-free electrolytic descaling process. | |
GB883603A (en) | Improvements in or relating to the surface treatment of silicon carbide | |
US2902419A (en) | Methods for the treatment of semi-conductor junction devices | |
JPS5467376A (en) | Production of plastic molded type semiconductor device | |
US3265599A (en) | Formation of grain boundary photoorienter by electrolytic etching | |
GB1096411A (en) | Improvements in or relating to the production of cutting edges | |
JPS6449272A (en) | Manufacture of semiconductor device | |
JPS5789520A (en) | Electrolytic burr removing machining electrode | |
JPS55141586A (en) | Recovering method of lead | |
JPS5679459A (en) | Pretreatment method for plating of external lead wire after semiconductor molding | |
JPS57188830A (en) | Removing method for resin burr of semiconductor device | |
JPS57151177A (en) | Manufacturing method of sealing type alkaline storage battery | |
JPS553812A (en) | Electrochemical treatment of waste water | |
SU109013A1 (en) | A method of processing substandard platinite | |
JPS57141919A (en) | Manufacture of semiconductor device | |
JPS558419A (en) | Anodic oxidation treatment method of al long-length materials and anode contact device | |
FR2298852A1 (en) | Electrochemical metal strip cleaning - in mercury contact and phosphoric acid baths before flushing and dewatering tanks | |
JPS5635793A (en) | Electrolytic formation of verdigris on surface of copper or copper alloy | |
GB878441A (en) | Method of treating the surface of semi-conductor elements | |
JPS5569290A (en) | Method and apparatus for production of partially plated metal material | |
JPS572534A (en) | Deburring method for resin-sealed type semiconductor device | |
JPS5272376A (en) | Electrolysis for prefining water suspension by use of aluminium electr ode | |
JPS5792839A (en) | Manufacture of semiconductor device | |
JPS57169096A (en) | Protecting method of electrolytic cell | |
JPS56133495A (en) | Electrolytic working device |