JPS57188830A - Removing method for resin burr of semiconductor device - Google Patents

Removing method for resin burr of semiconductor device

Info

Publication number
JPS57188830A
JPS57188830A JP7288881A JP7288881A JPS57188830A JP S57188830 A JPS57188830 A JP S57188830A JP 7288881 A JP7288881 A JP 7288881A JP 7288881 A JP7288881 A JP 7288881A JP S57188830 A JPS57188830 A JP S57188830A
Authority
JP
Japan
Prior art keywords
burr
lead frames
resin
resin burr
electrolysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7288881A
Other languages
Japanese (ja)
Other versions
JPH0223026B2 (en
Inventor
Hisaharu Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7288881A priority Critical patent/JPS57188830A/en
Publication of JPS57188830A publication Critical patent/JPS57188830A/en
Publication of JPH0223026B2 publication Critical patent/JPH0223026B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To remove the resin burr after sealed with resin without damaging a lead frame by removing the resin burr by hydrogen gas generated through electrolysis. CONSTITUTION:When the lead frames 2 are used as cathodes, an electric cell 21 made of stainless steel is employed as anodes and filled with an alkaline aqueous solution as an electrolyte and electrolysis is conducted, hydrogen 23 is generated from the lead frames 2 as the cathodes and oxygen 24 from the stainless plate 21 as the anodes, and the circumference of the lead frames 2 is changed into an alkaline liquid having high concentration. Since epoxy resin is minutely dissolved into alkali having high concentration, clearances are shaped among the resin burr 3 and the lead frames 2, hydrogen gas generated through the electrolysis of the alkaline aqueous solution intruding into the clearances has mechanical action on the resin burr, the burr is exfoliated from the lead frames and the burr is removed.
JP7288881A 1981-05-16 1981-05-16 Removing method for resin burr of semiconductor device Granted JPS57188830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7288881A JPS57188830A (en) 1981-05-16 1981-05-16 Removing method for resin burr of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7288881A JPS57188830A (en) 1981-05-16 1981-05-16 Removing method for resin burr of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57188830A true JPS57188830A (en) 1982-11-19
JPH0223026B2 JPH0223026B2 (en) 1990-05-22

Family

ID=13502327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7288881A Granted JPS57188830A (en) 1981-05-16 1981-05-16 Removing method for resin burr of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57188830A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016083817A (en) * 2014-10-24 2016-05-19 化研テック株式会社 Electrolytic solution composition for removing burr, and method for removing burr

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467376A (en) * 1977-11-08 1979-05-30 Nec Corp Production of plastic molded type semiconductor device
JPS5679459A (en) * 1979-12-04 1981-06-30 Noge Denki Kogyo:Kk Pretreatment method for plating of external lead wire after semiconductor molding

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467376A (en) * 1977-11-08 1979-05-30 Nec Corp Production of plastic molded type semiconductor device
JPS5679459A (en) * 1979-12-04 1981-06-30 Noge Denki Kogyo:Kk Pretreatment method for plating of external lead wire after semiconductor molding

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016083817A (en) * 2014-10-24 2016-05-19 化研テック株式会社 Electrolytic solution composition for removing burr, and method for removing burr

Also Published As

Publication number Publication date
JPH0223026B2 (en) 1990-05-22

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