JPS54133093A - Manufacture for gallium phosphide green color light emitting element - Google Patents

Manufacture for gallium phosphide green color light emitting element

Info

Publication number
JPS54133093A
JPS54133093A JP4109478A JP4109478A JPS54133093A JP S54133093 A JPS54133093 A JP S54133093A JP 4109478 A JP4109478 A JP 4109478A JP 4109478 A JP4109478 A JP 4109478A JP S54133093 A JPS54133093 A JP S54133093A
Authority
JP
Japan
Prior art keywords
substrate
main body
light emitting
solution
green color
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4109478A
Other languages
Japanese (ja)
Other versions
JPS5831739B2 (en
Inventor
Tatsuro Beppu
Masami Iwamoto
Makoto Tashiro
Akinobu Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP53041094A priority Critical patent/JPS5831739B2/en
Publication of JPS54133093A publication Critical patent/JPS54133093A/en
Publication of JPS5831739B2 publication Critical patent/JPS5831739B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Luminescent Compositions (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To increase the light emitting efficiency, by performing molten back the substrate and making the S in the substrate to the desired concentration, after contacting Ga solution to the GaP substrate doped with S.
CONSTITUTION: At one end of the quartz reaction furnace 10, the NH3 gas inlet tube 11 to add the N2 atoms being the center of green color emission and the Zn gas introducing tube 12 for P type crystal formation are respectively provided. Further, the slider 15 made of quartz and the liquid phase growing port 14 consisting of the main body 16 located on it are contained in the furnace 10, and the GaP substrate 17 doped by S is located in the concave 18 of the slider 15. Further, the main body 16 is provided with the opening 19 to insert the substrate 17 and the opening 20 to contain the Ga solution 27, it is covered with the covers 21 and 22, and at the back end of the main body end of the main body 16, a number of small holes 23 for impurity addition are provided. With this constitution, the substrate 17 and the solution 27 are contacted first, and the substrate 17 and the small holes 27 are opposed each other, the substrate 17 surface is molten back with baking, and, S is given to the specified concentration.
COPYRIGHT: (C)1979,JPO&Japio
JP53041094A 1978-04-07 1978-04-07 Method for manufacturing gallium phosphide green light emitting device Expired JPS5831739B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53041094A JPS5831739B2 (en) 1978-04-07 1978-04-07 Method for manufacturing gallium phosphide green light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53041094A JPS5831739B2 (en) 1978-04-07 1978-04-07 Method for manufacturing gallium phosphide green light emitting device

Publications (2)

Publication Number Publication Date
JPS54133093A true JPS54133093A (en) 1979-10-16
JPS5831739B2 JPS5831739B2 (en) 1983-07-08

Family

ID=12598880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53041094A Expired JPS5831739B2 (en) 1978-04-07 1978-04-07 Method for manufacturing gallium phosphide green light emitting device

Country Status (1)

Country Link
JP (1) JPS5831739B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930797A (en) * 1982-08-16 1984-02-18 Shin Etsu Handotai Co Ltd Liquid phase epitaxial growth method
EP0590649A1 (en) * 1992-09-30 1994-04-06 Shin-Etsu Handotai Kabushiki Kaisha A GaP light emitting element substrate and a method of manufacturing it

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930797A (en) * 1982-08-16 1984-02-18 Shin Etsu Handotai Co Ltd Liquid phase epitaxial growth method
JPH0218319B2 (en) * 1982-08-16 1990-04-25 Shinetsu Handotai Kk
EP0590649A1 (en) * 1992-09-30 1994-04-06 Shin-Etsu Handotai Kabushiki Kaisha A GaP light emitting element substrate and a method of manufacturing it
US5643827A (en) * 1992-09-30 1997-07-01 Shin-Etsu Handotai Kabushiki Kaisha GaP light emitting substrate and a method of manufacturing it

Also Published As

Publication number Publication date
JPS5831739B2 (en) 1983-07-08

Similar Documents

Publication Publication Date Title
JPS54133093A (en) Manufacture for gallium phosphide green color light emitting element
JPS549592A (en) Luminous semiconductor element
JPS5453974A (en) Manufacture for gallium phosphide green light emitting element
JPS5493380A (en) Semiconductor light emitting device
JPS5453975A (en) Manufacture for gallium phosphide green light emitting element
JPS5453976A (en) Gallium phosphide green light emitting element
JPS54112790A (en) Source boat for vapor phase growth of compound semiconductor
JPS54133480A (en) Growth method for liquid phase epitaxial
JPS5453977A (en) Manufacture for gallium phosphide green light emitting element
JPS52154347A (en) Low temperature single crystal thin film growth method
JPS53119297A (en) Liquid phase growh method of gallium phosphide red luminous element
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS57149721A (en) Method of vapor epitaxial growth
JPS57166088A (en) Electrode of luminus diode
JPS5543882A (en) Gaseous-phase growing of compound semiconductor epitaxial film
JPS6428374A (en) Method for selectively growing tungsten
JPS5629382A (en) Light emitting device of double hetero structure and manufacture thereof
JPS5267259A (en) Preparation of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS5544791A (en) Diffusing method for impurity to 3-5 compound
JPS5574195A (en) Manufacturing semiconductor laser
JPS52144958A (en) Slot hole shadow mask and its manufacture
JPS54151373A (en) Gas phase growth method
JPS54116183A (en) Manufacture for semiconductor device