JPS54116183A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS54116183A JPS54116183A JP2210878A JP2210878A JPS54116183A JP S54116183 A JPS54116183 A JP S54116183A JP 2210878 A JP2210878 A JP 2210878A JP 2210878 A JP2210878 A JP 2210878A JP S54116183 A JPS54116183 A JP S54116183A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- caused
- oxide film
- pattern alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To make easy fine pattern alignment, by leaving a part of the oxide film in forming implanted layer and by using it for the mark for pattern alignment after epitaxial growing layer formation.
CONSTITUTION: The P+ implanted layer 3 is diffused on the surface of the N type Si substrate 1 by taking the oxide film 2 as a mask, and only the film 2-1 among the film 2 incorporated with the oxide film caused at that time is left and others are removed. Further, on the entire surface, N type Si layer 4 is epitaxially grown. In this case, if there is any pattern shift on the single crystal layer 4 grown on the layer 3, no shift is caused on the polycrystal layer 2-2 caused on the film 2-1 and it can be used for the next pattern alignment suffieicntly. Thus, the marks 2-2 and 2-3 can be obtained with desired shape and those are used for the marks for the processes after growing of the layer 4.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2210878A JPS54116183A (en) | 1978-03-01 | 1978-03-01 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2210878A JPS54116183A (en) | 1978-03-01 | 1978-03-01 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54116183A true JPS54116183A (en) | 1979-09-10 |
Family
ID=12073683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2210878A Pending JPS54116183A (en) | 1978-03-01 | 1978-03-01 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54116183A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4968637A (en) * | 1989-05-31 | 1990-11-06 | Raytheon Company | Method of manufacture TiW alignment mark and implant mask |
-
1978
- 1978-03-01 JP JP2210878A patent/JPS54116183A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4968637A (en) * | 1989-05-31 | 1990-11-06 | Raytheon Company | Method of manufacture TiW alignment mark and implant mask |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54116183A (en) | Manufacture for semiconductor device | |
JPS55138877A (en) | Method of fabricating semiconductor device | |
JPS5513957A (en) | Semiconductor device | |
JPS53108389A (en) | Manufacture for semiconductor device | |
JPS5694673A (en) | Semiconductor junction capacity device and manufacture thereof | |
JPS53104162A (en) | Forming method for epitaxial layer on semiconductor wafer | |
JPS5420678A (en) | Production of silicon monocrystaline island regions | |
JPS57153438A (en) | Manufacture of semiconductor substrate | |
JPS5654058A (en) | Integrated circuit | |
JPS52119858A (en) | Manufacture of semi-conductor device | |
JPS5660015A (en) | Manufacture of semiconductor device | |
JPS5623739A (en) | Manufactue of semiconductor element having buried layer | |
JPS5328374A (en) | Wafer production | |
JPS5543882A (en) | Gaseous-phase growing of compound semiconductor epitaxial film | |
JPS5350687A (en) | Production of semiconductor device | |
JPS52109866A (en) | Liquid epitaxial growing method | |
JPS55123143A (en) | Manufacture of semiconductor device | |
JPS52154347A (en) | Low temperature single crystal thin film growth method | |
JPS5475991A (en) | Junction-type field effect transistor | |
JPS55154747A (en) | Manufacture of semiconductor integrated circuit device | |
JPS5577134A (en) | Formation of fine pattern | |
JPS5446468A (en) | Manufacture of inverted-trapezoid structure | |
JPS53144690A (en) | Production of semiconductor device | |
JPS5469390A (en) | Production of semiconductor device | |
JPS53143163A (en) | Epitaxial growth method |