JPS54116183A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54116183A
JPS54116183A JP2210878A JP2210878A JPS54116183A JP S54116183 A JPS54116183 A JP S54116183A JP 2210878 A JP2210878 A JP 2210878A JP 2210878 A JP2210878 A JP 2210878A JP S54116183 A JPS54116183 A JP S54116183A
Authority
JP
Japan
Prior art keywords
layer
film
caused
oxide film
pattern alignment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2210878A
Other languages
Japanese (ja)
Inventor
Saburo Oikawa
Kenji Miyata
Yoshio Terasawa
Susumu Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2210878A priority Critical patent/JPS54116183A/en
Publication of JPS54116183A publication Critical patent/JPS54116183A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make easy fine pattern alignment, by leaving a part of the oxide film in forming implanted layer and by using it for the mark for pattern alignment after epitaxial growing layer formation.
CONSTITUTION: The P+ implanted layer 3 is diffused on the surface of the N type Si substrate 1 by taking the oxide film 2 as a mask, and only the film 2-1 among the film 2 incorporated with the oxide film caused at that time is left and others are removed. Further, on the entire surface, N type Si layer 4 is epitaxially grown. In this case, if there is any pattern shift on the single crystal layer 4 grown on the layer 3, no shift is caused on the polycrystal layer 2-2 caused on the film 2-1 and it can be used for the next pattern alignment suffieicntly. Thus, the marks 2-2 and 2-3 can be obtained with desired shape and those are used for the marks for the processes after growing of the layer 4.
COPYRIGHT: (C)1979,JPO&Japio
JP2210878A 1978-03-01 1978-03-01 Manufacture for semiconductor device Pending JPS54116183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2210878A JPS54116183A (en) 1978-03-01 1978-03-01 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2210878A JPS54116183A (en) 1978-03-01 1978-03-01 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS54116183A true JPS54116183A (en) 1979-09-10

Family

ID=12073683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2210878A Pending JPS54116183A (en) 1978-03-01 1978-03-01 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54116183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968637A (en) * 1989-05-31 1990-11-06 Raytheon Company Method of manufacture TiW alignment mark and implant mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968637A (en) * 1989-05-31 1990-11-06 Raytheon Company Method of manufacture TiW alignment mark and implant mask

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