JPS5544791A - Diffusing method for impurity to 3-5 compound - Google Patents

Diffusing method for impurity to 3-5 compound

Info

Publication number
JPS5544791A
JPS5544791A JP11961778A JP11961778A JPS5544791A JP S5544791 A JPS5544791 A JP S5544791A JP 11961778 A JP11961778 A JP 11961778A JP 11961778 A JP11961778 A JP 11961778A JP S5544791 A JPS5544791 A JP S5544791A
Authority
JP
Japan
Prior art keywords
diffusion
vapor pressure
phosphorus vapor
iii
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11961778A
Other languages
Japanese (ja)
Other versions
JPS5932053B2 (en
Inventor
Yoshinari Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP53119617A priority Critical patent/JPS5932053B2/en
Publication of JPS5544791A publication Critical patent/JPS5544791A/en
Publication of JPS5932053B2 publication Critical patent/JPS5932053B2/en
Expired legal-status Critical Current

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Abstract

PURPOSE: To obtain well reproductive and flattened diffusion front by using Cd as P-type diffusion impurity to III-V compound including In and diffusing under phosphorus vapor pressure in thermal equilibrium with CdP2.
CONSTITUTION: In an impurity diffusion temperature, diffusion processing is made under phosphorus vapor pressure in the range between a phosphorus vapor pressure in thermal equilibrium with CdP2 as upper limit and a phosphorus vapor pressure in thermal equilibrium with Cd3P2 as lower limit. Namely, under this condition Cd is diffused into III-V compound including In as III group element. For that purpose, an impurity diffusion source 1 consisting of Cd3P2 and III-V compound substrate 2 containing In are enclosed into a quartz ampoule and a quartz rod 3 of th end thereof is melted and source 1 is diffused by closed tube method. At this time, by determining phosphorus vapor pressure particullarly, very shallow diffusion layer can be obtained and diffusion front becomes even.
COPYRIGHT: (C)1980,JPO&Japio
JP53119617A 1978-09-27 1978-09-27 3↓-5 Method of impurity diffusion into compound semiconductors Expired JPS5932053B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53119617A JPS5932053B2 (en) 1978-09-27 1978-09-27 3↓-5 Method of impurity diffusion into compound semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53119617A JPS5932053B2 (en) 1978-09-27 1978-09-27 3↓-5 Method of impurity diffusion into compound semiconductors

Publications (2)

Publication Number Publication Date
JPS5544791A true JPS5544791A (en) 1980-03-29
JPS5932053B2 JPS5932053B2 (en) 1984-08-06

Family

ID=14765851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53119617A Expired JPS5932053B2 (en) 1978-09-27 1978-09-27 3↓-5 Method of impurity diffusion into compound semiconductors

Country Status (1)

Country Link
JP (1) JPS5932053B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049524A (en) * 1989-02-28 1991-09-17 Industrial Technology Research Institute Cd diffusion in InP substrates

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62124139U (en) * 1986-01-30 1987-08-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049524A (en) * 1989-02-28 1991-09-17 Industrial Technology Research Institute Cd diffusion in InP substrates

Also Published As

Publication number Publication date
JPS5932053B2 (en) 1984-08-06

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