JPS5544791A - Diffusing method for impurity to 3-5 compound - Google Patents
Diffusing method for impurity to 3-5 compoundInfo
- Publication number
- JPS5544791A JPS5544791A JP11961778A JP11961778A JPS5544791A JP S5544791 A JPS5544791 A JP S5544791A JP 11961778 A JP11961778 A JP 11961778A JP 11961778 A JP11961778 A JP 11961778A JP S5544791 A JPS5544791 A JP S5544791A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- vapor pressure
- phosphorus vapor
- iii
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To obtain well reproductive and flattened diffusion front by using Cd as P-type diffusion impurity to III-V compound including In and diffusing under phosphorus vapor pressure in thermal equilibrium with CdP2.
CONSTITUTION: In an impurity diffusion temperature, diffusion processing is made under phosphorus vapor pressure in the range between a phosphorus vapor pressure in thermal equilibrium with CdP2 as upper limit and a phosphorus vapor pressure in thermal equilibrium with Cd3P2 as lower limit. Namely, under this condition Cd is diffused into III-V compound including In as III group element. For that purpose, an impurity diffusion source 1 consisting of Cd3P2 and III-V compound substrate 2 containing In are enclosed into a quartz ampoule and a quartz rod 3 of th end thereof is melted and source 1 is diffused by closed tube method. At this time, by determining phosphorus vapor pressure particullarly, very shallow diffusion layer can be obtained and diffusion front becomes even.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53119617A JPS5932053B2 (en) | 1978-09-27 | 1978-09-27 | 3↓-5 Method of impurity diffusion into compound semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53119617A JPS5932053B2 (en) | 1978-09-27 | 1978-09-27 | 3↓-5 Method of impurity diffusion into compound semiconductors |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5544791A true JPS5544791A (en) | 1980-03-29 |
JPS5932053B2 JPS5932053B2 (en) | 1984-08-06 |
Family
ID=14765851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53119617A Expired JPS5932053B2 (en) | 1978-09-27 | 1978-09-27 | 3↓-5 Method of impurity diffusion into compound semiconductors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5932053B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5049524A (en) * | 1989-02-28 | 1991-09-17 | Industrial Technology Research Institute | Cd diffusion in InP substrates |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62124139U (en) * | 1986-01-30 | 1987-08-06 |
-
1978
- 1978-09-27 JP JP53119617A patent/JPS5932053B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5049524A (en) * | 1989-02-28 | 1991-09-17 | Industrial Technology Research Institute | Cd diffusion in InP substrates |
Also Published As
Publication number | Publication date |
---|---|
JPS5932053B2 (en) | 1984-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS549592A (en) | Luminous semiconductor element | |
JPS54104770A (en) | Heat treatment method for 3-5 group compound semiconductor | |
JPS5544791A (en) | Diffusing method for impurity to 3-5 compound | |
JPS5541704A (en) | Production of semiconductor device | |
JPS5684400A (en) | Impurity diffusing method | |
JPS5460858A (en) | Manufacture of gallium arsenide crystal wafer | |
JPS5395570A (en) | Forming method of epitaxial layer | |
JPS5562727A (en) | Diffusing method of n-type impurity | |
JPS5227354A (en) | Impurity diffusion method for iii-v group compound semiconductor region | |
JPS5666030A (en) | Manufacture of semiconductor device | |
JPS56152140A (en) | Color cathode ray tube | |
JPS52114504A (en) | Device for zone melting with hot wire | |
JPS54148486A (en) | Semiconductor device | |
JPS5423467A (en) | Singlecrystal growing method for binary semiconductor | |
JPS5379459A (en) | Doping prodess device | |
JPS5655038A (en) | Diffusing method for impurity into semiconductor wafer | |
JPS54586A (en) | Production of semiconductor device | |
JPS52120763A (en) | Silicon epitaxial growth method | |
JPS5596633A (en) | Method of forming electrode of semiconductor device | |
JPS5340271A (en) | Semiconductor diffusing method | |
JPS6417425A (en) | Manufacture of semiconductor device | |
JPS52154347A (en) | Low temperature single crystal thin film growth method | |
JPS5472669A (en) | Impurity diffusing method of closing tube type | |
JPS5333580A (en) | Production of semiconductor device | |
JPS5740939A (en) | P-n junction formation |