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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Application filed by Matsushita Electric Industrial Co LtdfiledCriticalMatsushita Electric Industrial Co Ltd
Priority to JP11775576ApriorityCriticalpatent/JPS5342561A/en
Publication of JPS5342561ApublicationCriticalpatent/JPS5342561A/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Local Oxidation Of Silicon
(AREA)
Abstract
PURPOSE: To obtain a high density LSI of high gm of load MOS transistors, flat surface and high breakdown voltage between sources and drains by opening windows of a narrow width in the photosensitive resin formed on a semiconductor substrate, diffusing an impurity from here, thereafter making the substrate porous and performing thermal oxidation.
COPYRIGHT: (C)1978,JPO&Japio
JP11775576A1976-09-291976-09-29Production of semiconductor device
PendingJPS5342561A
(en)