JPS5283073A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5283073A
JPS5283073A JP15929675A JP15929675A JPS5283073A JP S5283073 A JPS5283073 A JP S5283073A JP 15929675 A JP15929675 A JP 15929675A JP 15929675 A JP15929675 A JP 15929675A JP S5283073 A JPS5283073 A JP S5283073A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
layer
added poly
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15929675A
Other languages
Japanese (ja)
Other versions
JPS5917866B2 (en
Inventor
Shigero Kuninobu
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15929675A priority Critical patent/JPS5917866B2/en
Priority to US05/754,261 priority patent/US4085499A/en
Publication of JPS5283073A publication Critical patent/JPS5283073A/en
Publication of JPS5917866B2 publication Critical patent/JPS5917866B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To provide MOSFET by diffusion from a phosphorus-added poly Si layer through the openings of an SiO2 film and to produce its load resistance part on the same substrate by performing low-concentration diffusion to non-added poly Si layer.
COPYRIGHT: (C)1977,JPO&Japio
JP15929675A 1975-12-29 1975-12-29 hand tai souchi no seizou houhou Expired JPS5917866B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15929675A JPS5917866B2 (en) 1975-12-29 1975-12-29 hand tai souchi no seizou houhou
US05/754,261 US4085499A (en) 1975-12-29 1976-12-27 Method of making a MOS-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15929675A JPS5917866B2 (en) 1975-12-29 1975-12-29 hand tai souchi no seizou houhou

Publications (2)

Publication Number Publication Date
JPS5283073A true JPS5283073A (en) 1977-07-11
JPS5917866B2 JPS5917866B2 (en) 1984-04-24

Family

ID=15690683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15929675A Expired JPS5917866B2 (en) 1975-12-29 1975-12-29 hand tai souchi no seizou houhou

Country Status (1)

Country Link
JP (1) JPS5917866B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS5952878A (en) * 1982-09-20 1984-03-27 Fujitsu Ltd Manufacture of semiconductor device
JPS6045050A (en) * 1983-08-22 1985-03-11 Nec Corp Structure of resistor element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS6231506B2 (en) * 1977-09-14 1987-07-08 Matsushita Electric Ind Co Ltd
JPS5952878A (en) * 1982-09-20 1984-03-27 Fujitsu Ltd Manufacture of semiconductor device
JPH0481327B2 (en) * 1982-09-20 1992-12-22 Fujitsu Ltd
JPS6045050A (en) * 1983-08-22 1985-03-11 Nec Corp Structure of resistor element

Also Published As

Publication number Publication date
JPS5917866B2 (en) 1984-04-24

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