JPS5283073A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5283073A JPS5283073A JP15929675A JP15929675A JPS5283073A JP S5283073 A JPS5283073 A JP S5283073A JP 15929675 A JP15929675 A JP 15929675A JP 15929675 A JP15929675 A JP 15929675A JP S5283073 A JPS5283073 A JP S5283073A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- layer
- added poly
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To provide MOSFET by diffusion from a phosphorus-added poly Si layer through the openings of an SiO2 film and to produce its load resistance part on the same substrate by performing low-concentration diffusion to non-added poly Si layer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15929675A JPS5917866B2 (en) | 1975-12-29 | 1975-12-29 | hand tai souchi no seizou houhou |
US05/754,261 US4085499A (en) | 1975-12-29 | 1976-12-27 | Method of making a MOS-type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15929675A JPS5917866B2 (en) | 1975-12-29 | 1975-12-29 | hand tai souchi no seizou houhou |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5283073A true JPS5283073A (en) | 1977-07-11 |
JPS5917866B2 JPS5917866B2 (en) | 1984-04-24 |
Family
ID=15690683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15929675A Expired JPS5917866B2 (en) | 1975-12-29 | 1975-12-29 | hand tai souchi no seizou houhou |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5917866B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5444482A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its manufacture |
JPS5952878A (en) * | 1982-09-20 | 1984-03-27 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6045050A (en) * | 1983-08-22 | 1985-03-11 | Nec Corp | Structure of resistor element |
-
1975
- 1975-12-29 JP JP15929675A patent/JPS5917866B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5444482A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its manufacture |
JPS6231506B2 (en) * | 1977-09-14 | 1987-07-08 | Matsushita Electric Ind Co Ltd | |
JPS5952878A (en) * | 1982-09-20 | 1984-03-27 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0481327B2 (en) * | 1982-09-20 | 1992-12-22 | Fujitsu Ltd | |
JPS6045050A (en) * | 1983-08-22 | 1985-03-11 | Nec Corp | Structure of resistor element |
Also Published As
Publication number | Publication date |
---|---|
JPS5917866B2 (en) | 1984-04-24 |
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