JPS53145578A - Diode varister - Google Patents

Diode varister

Info

Publication number
JPS53145578A
JPS53145578A JP6142077A JP6142077A JPS53145578A JP S53145578 A JPS53145578 A JP S53145578A JP 6142077 A JP6142077 A JP 6142077A JP 6142077 A JP6142077 A JP 6142077A JP S53145578 A JPS53145578 A JP S53145578A
Authority
JP
Japan
Prior art keywords
varister
diode
forming
surface layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6142077A
Other languages
Japanese (ja)
Inventor
Toshihiko Aimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6142077A priority Critical patent/JPS53145578A/en
Publication of JPS53145578A publication Critical patent/JPS53145578A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To avert the change with time of forward voltage drop by decreasing the impurity concentration of the surface layer of a diffused region and beforehand giving a concentration difference between said surface layer and its surrounding at the time of forming a diode varister by diffusion-forming an opposite conductivity type region within a one-conductivity type substrate.
JP6142077A 1977-05-25 1977-05-25 Diode varister Pending JPS53145578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6142077A JPS53145578A (en) 1977-05-25 1977-05-25 Diode varister

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6142077A JPS53145578A (en) 1977-05-25 1977-05-25 Diode varister

Publications (1)

Publication Number Publication Date
JPS53145578A true JPS53145578A (en) 1978-12-18

Family

ID=13170578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6142077A Pending JPS53145578A (en) 1977-05-25 1977-05-25 Diode varister

Country Status (1)

Country Link
JP (1) JPS53145578A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818674A (en) * 1981-07-16 1983-02-03 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Display unit
JPS62145876A (en) * 1985-12-20 1987-06-29 Sanyo Electric Co Ltd Protecting diode for compound semiconductor device
JPS63184359A (en) * 1987-01-27 1988-07-29 Toshiba Corp Input protective circuit of semiconductor device
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818674A (en) * 1981-07-16 1983-02-03 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Display unit
JPS62145876A (en) * 1985-12-20 1987-06-29 Sanyo Electric Co Ltd Protecting diode for compound semiconductor device
JPS63184359A (en) * 1987-01-27 1988-07-29 Toshiba Corp Input protective circuit of semiconductor device
JPH0413865B2 (en) * 1987-01-27 1992-03-11 Tokyo Shibaura Electric Co
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same

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