JPS53144684A - Diode varistor - Google Patents

Diode varistor

Info

Publication number
JPS53144684A
JPS53144684A JP6025777A JP6025777A JPS53144684A JP S53144684 A JPS53144684 A JP S53144684A JP 6025777 A JP6025777 A JP 6025777A JP 6025777 A JP6025777 A JP 6025777A JP S53144684 A JPS53144684 A JP S53144684A
Authority
JP
Japan
Prior art keywords
region
conductivity type
substrate
varistor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6025777A
Other languages
Japanese (ja)
Inventor
Toshihiko Aimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6025777A priority Critical patent/JPS53144684A/en
Publication of JPS53144684A publication Critical patent/JPS53144684A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To avert the variation in forward voltage drop by composing this region with the high impurity region extending from the surface of a substrate and the low impurity concentration region making contact to the bottom part thereof and of a small area at the time of diffusion-forming the opposite conductivity type region within one conductivity type semiconductor substrate.
JP6025777A 1977-05-23 1977-05-23 Diode varistor Pending JPS53144684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6025777A JPS53144684A (en) 1977-05-23 1977-05-23 Diode varistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6025777A JPS53144684A (en) 1977-05-23 1977-05-23 Diode varistor

Publications (1)

Publication Number Publication Date
JPS53144684A true JPS53144684A (en) 1978-12-16

Family

ID=13136928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6025777A Pending JPS53144684A (en) 1977-05-23 1977-05-23 Diode varistor

Country Status (1)

Country Link
JP (1) JPS53144684A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4987459A (en) * 1989-01-19 1991-01-22 Toko, Inc. Variable capacitance diode element having wide capacitance variation range
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4987459A (en) * 1989-01-19 1991-01-22 Toko, Inc. Variable capacitance diode element having wide capacitance variation range
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range

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