JPS53130984A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53130984A
JPS53130984A JP4617377A JP4617377A JPS53130984A JP S53130984 A JPS53130984 A JP S53130984A JP 4617377 A JP4617377 A JP 4617377A JP 4617377 A JP4617377 A JP 4617377A JP S53130984 A JPS53130984 A JP S53130984A
Authority
JP
Japan
Prior art keywords
load resistor
region
epitaxial layer
semiconductor device
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4617377A
Other languages
Japanese (ja)
Inventor
Yoichi Iga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4617377A priority Critical patent/JPS53130984A/en
Publication of JPS53130984A publication Critical patent/JPS53130984A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an IGFET incorporating a load resistor having less element area, by providing a load resistor area on a semiconductor substrate, growing epitaxial layer on th entire surface, and forming the drain region, power supply coupling region and the source region surrounded by it in the epitaxial layer on the both ends of the load resistor region.
JP4617377A 1977-04-20 1977-04-20 Semiconductor device Pending JPS53130984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4617377A JPS53130984A (en) 1977-04-20 1977-04-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4617377A JPS53130984A (en) 1977-04-20 1977-04-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53130984A true JPS53130984A (en) 1978-11-15

Family

ID=12739624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4617377A Pending JPS53130984A (en) 1977-04-20 1977-04-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53130984A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259295A (en) * 1992-03-04 1993-10-08 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517886A (en) * 1974-07-08 1976-01-22 Tokyo Shibaura Electric Co HANDOTAISHUSEKI KAIROSOCHI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517886A (en) * 1974-07-08 1976-01-22 Tokyo Shibaura Electric Co HANDOTAISHUSEKI KAIROSOCHI

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259295A (en) * 1992-03-04 1993-10-08 Nec Corp Semiconductor device

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