JPS53130984A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53130984A JPS53130984A JP4617377A JP4617377A JPS53130984A JP S53130984 A JPS53130984 A JP S53130984A JP 4617377 A JP4617377 A JP 4617377A JP 4617377 A JP4617377 A JP 4617377A JP S53130984 A JPS53130984 A JP S53130984A
- Authority
- JP
- Japan
- Prior art keywords
- load resistor
- region
- epitaxial layer
- semiconductor device
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain an IGFET incorporating a load resistor having less element area, by providing a load resistor area on a semiconductor substrate, growing epitaxial layer on th entire surface, and forming the drain region, power supply coupling region and the source region surrounded by it in the epitaxial layer on the both ends of the load resistor region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4617377A JPS53130984A (en) | 1977-04-20 | 1977-04-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4617377A JPS53130984A (en) | 1977-04-20 | 1977-04-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53130984A true JPS53130984A (en) | 1978-11-15 |
Family
ID=12739624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4617377A Pending JPS53130984A (en) | 1977-04-20 | 1977-04-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53130984A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05259295A (en) * | 1992-03-04 | 1993-10-08 | Nec Corp | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS517886A (en) * | 1974-07-08 | 1976-01-22 | Tokyo Shibaura Electric Co | HANDOTAISHUSEKI KAIROSOCHI |
-
1977
- 1977-04-20 JP JP4617377A patent/JPS53130984A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS517886A (en) * | 1974-07-08 | 1976-01-22 | Tokyo Shibaura Electric Co | HANDOTAISHUSEKI KAIROSOCHI |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05259295A (en) * | 1992-03-04 | 1993-10-08 | Nec Corp | Semiconductor device |
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