JPS572561A - Resistance element - Google Patents

Resistance element

Info

Publication number
JPS572561A
JPS572561A JP7639780A JP7639780A JPS572561A JP S572561 A JPS572561 A JP S572561A JP 7639780 A JP7639780 A JP 7639780A JP 7639780 A JP7639780 A JP 7639780A JP S572561 A JPS572561 A JP S572561A
Authority
JP
Japan
Prior art keywords
layer
resistance element
type
epitaxial layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7639780A
Other languages
Japanese (ja)
Inventor
Kazuo Fujishiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Toyo Electronics Industry Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd, Toyo Electronics Industry Corp filed Critical Rohm Co Ltd
Priority to JP7639780A priority Critical patent/JPS572561A/en
Publication of JPS572561A publication Critical patent/JPS572561A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a resistance element which has a substantially thin epitaxial layer by dividing the epitaxial layer formed on a substrate into reversely conductive type isolation diffused layer and buried layer. CONSTITUTION:An N type epitaxial layer 2 is formed on a substrate (e. g., P type) 1, and is divided into a reversely conductive type (P type) buried layer 3 to the layer 2 and an isolation diffused layer 4. The thickness of the resistance element 5 is reduced as compared with the layer 2 due to the existence of the layer 3. Thus, the resistance element having a substantially thin epitaxial layer can be obtained.
JP7639780A 1980-06-05 1980-06-05 Resistance element Pending JPS572561A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7639780A JPS572561A (en) 1980-06-05 1980-06-05 Resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7639780A JPS572561A (en) 1980-06-05 1980-06-05 Resistance element

Publications (1)

Publication Number Publication Date
JPS572561A true JPS572561A (en) 1982-01-07

Family

ID=13604156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7639780A Pending JPS572561A (en) 1980-06-05 1980-06-05 Resistance element

Country Status (1)

Country Link
JP (1) JPS572561A (en)

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