JPS572561A - Resistance element - Google Patents
Resistance elementInfo
- Publication number
- JPS572561A JPS572561A JP7639780A JP7639780A JPS572561A JP S572561 A JPS572561 A JP S572561A JP 7639780 A JP7639780 A JP 7639780A JP 7639780 A JP7639780 A JP 7639780A JP S572561 A JPS572561 A JP S572561A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance element
- type
- epitaxial layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002955 isolation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a resistance element which has a substantially thin epitaxial layer by dividing the epitaxial layer formed on a substrate into reversely conductive type isolation diffused layer and buried layer. CONSTITUTION:An N type epitaxial layer 2 is formed on a substrate (e. g., P type) 1, and is divided into a reversely conductive type (P type) buried layer 3 to the layer 2 and an isolation diffused layer 4. The thickness of the resistance element 5 is reduced as compared with the layer 2 due to the existence of the layer 3. Thus, the resistance element having a substantially thin epitaxial layer can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7639780A JPS572561A (en) | 1980-06-05 | 1980-06-05 | Resistance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7639780A JPS572561A (en) | 1980-06-05 | 1980-06-05 | Resistance element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS572561A true JPS572561A (en) | 1982-01-07 |
Family
ID=13604156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7639780A Pending JPS572561A (en) | 1980-06-05 | 1980-06-05 | Resistance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS572561A (en) |
-
1980
- 1980-06-05 JP JP7639780A patent/JPS572561A/en active Pending
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