JPH06244444A - Light confining structure and photodetector using structure thereof - Google Patents

Light confining structure and photodetector using structure thereof

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Publication number
JPH06244444A
JPH06244444A JP5029092A JP2909293A JPH06244444A JP H06244444 A JPH06244444 A JP H06244444A JP 5029092 A JP5029092 A JP 5029092A JP 2909293 A JP2909293 A JP 2909293A JP H06244444 A JPH06244444 A JP H06244444A
Authority
JP
Japan
Prior art keywords
light
substrate
refractive index
transition layer
structure according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5029092A
Other languages
Japanese (ja)
Other versions
JP3526308B2 (en
Inventor
Tsuyoshi Uematsu
強志 上松
Mitsunori Ketsusako
光紀 蕨迫
Hiroyuki Otsuka
寛之 大塚
Yasushi Nagata
寧 永田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP02909293A priority Critical patent/JP3526308B2/en
Publication of JPH06244444A publication Critical patent/JPH06244444A/en
Application granted granted Critical
Publication of JP3526308B2 publication Critical patent/JP3526308B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

PURPOSE:To provide a light confining structure, which can decrease surface reflection and can perform the light confinement effectively. CONSTITUTION:A transition layer 2 having the recess parts and protruding parts is provided on the surface of the a substrate 3. The repeating width of the recess part and the protruding part is made to be the wavelength or less of main light 5, which is to be confined. It is preferable to provide recess parts and protruding parts 8 and 9 at the rear surface of the substrate 3. The refractive index of the transition layer 2 is changed so as to approach the refractive index of the substrate toward the side of the substrate from the reverse side of the substrate.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、光センサー、光電変換
装置等の受光装置や光励起レーザー等の光−光変換装置
等に用いる光閉込め構造及びそれを用いた受光素子に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light confining structure used in a light receiving device such as an optical sensor and a photoelectric conversion device, a light-to-light converting device such as a photoexcitation laser, and a light receiving element using the same.

【０００２】[0002]

【従来の技術】光を基板に入射し、これを用いて光−光
変換、光−電気変換等を行なう場合、基板内に光を効果
的に取り込み、この光を基板外に逃すことなく、基板内
に閉じ込めることにより、上記の各変換の効率を高くす
ることができる。これを行なうためには、基板表面での
光の反射率の低減及び基板内に入射した光の閉じ込めが
重要である。2. Description of the Related Art When light is incident on a substrate and is used for light-to-light conversion, light-to-electrical conversion, etc., the light is effectively taken into the substrate and the light is not leaked to the outside of the substrate. By confining it in the substrate, the efficiency of each of the above conversions can be increased. In order to do this, it is important to reduce the reflectance of light on the substrate surface and confine the light incident on the substrate.

【０００３】従来、基板表面での入射光の反射率の低減
は、反射防止膜や数十μｍの大きさの表面凹凸等を用い
て行なわれていた。また、エス アイ ディー ８９
ダイジェスト ２７０頁（１９８９）（ＳＩＤ ８９
ＤＩＧＥＳＴ ｐ２７０（１９８９））や特願平３−５
４３７１に述べられているように、微細なＳｉＯ2、Ｍ
ｇＦ2粒を用いた表面微細凹凸による反射防止膜を用い
ることが行なわれていた。Conventionally, the reflectance of incident light on the surface of a substrate has been reduced by using an antireflection film or surface irregularities having a size of several tens of μm. In addition, S 89
Digest 270 pages (1989) (SID 89
DIGEST p270 (1989)) and Japanese Patent Application No. 3-5
4371, fine SiO 2 , M
It has been practiced to use an antireflection film having fine surface irregularities using gF 2 grains.

【０００４】[0004]

【発明が解決しようとする課題】上記従来の反射防止膜
を用いる方法は、入射光の波長が広範囲に及んだり、光
の入射角が大きく変化する場合には充分に反射率を下げ
ることが出来ないという問題があった。また、数十μｍ
の大きさの表面凹凸を用いる方法は、光が基板に入射し
たときに屈折で光路が大きく曲げられるため、裏面に形
成された凹凸を用て光閉じ込めを行なうことは難しいと
いう問題があった。また、微細なＳｉＯ2粒等を用いた
表面微細凹凸による反射防止膜を用いた場合は、基板の
屈折率や表面微細凹凸形状について考慮していないた
め、反射率を非常に低くすることは困難であるという問
題があった。The conventional method using the antireflection film described above can sufficiently reduce the reflectance when the wavelength of incident light extends over a wide range or the incident angle of light changes greatly. There was a problem that I could not do it. Also, several tens of μm
The method using the surface unevenness of the size has a problem that it is difficult to confine light by using the unevenness formed on the back surface because the light path is largely bent by refraction when light is incident on the substrate. Further, when an antireflection film having fine surface irregularities made of fine SiO 2 grains is used, it is difficult to make the reflectance extremely low because the refractive index of the substrate and the shape of the fine surface irregularities are not taken into consideration. There was a problem that was.

【０００５】本発明の目的は、表面反射を低減し、光閉
じ込めを有効に行なうことができる光閉込め構造及びそ
れを用いた受光素子を提供することにある。An object of the present invention is to provide a light confining structure capable of reducing surface reflection and effectively confining light, and a light receiving element using the same.

【０００６】[0006]

【課題を解決するための手段】上記目的を達成するため
に、本発明の光閉込め構造は、基板及び基板表面に設け
られた、凹凸を有する遷移層からなり、この凹凸の繰り
返し幅を光閉じ込めを行なう主な光の波長以下とするよ
うに構成する。In order to achieve the above object, the light confining structure of the present invention comprises a substrate and a transition layer having irregularities provided on the surface of the substrate. The wavelength is set to be equal to or shorter than the main light wavelength for confinement.

【０００７】この遷移層の屈折率は、基板側と逆の側か
ら基板側に向かって、基板の屈折率に近づくように変化
することが好ましい。このように屈折率が基板外部か
ら、基板方向に連続的に変化することにより、数層で形
成された干渉薄膜による反射防止膜に比べはるかに低い
反射率を、波長の広い範囲に渡って得ることが出来る。It is preferable that the refractive index of the transition layer changes from the side opposite to the substrate side toward the substrate side so as to approach the refractive index of the substrate. By continuously changing the refractive index from the outside of the substrate toward the substrate in this manner, a much lower reflectance can be obtained over a wide range of wavelengths as compared with an antireflection film made of an interference thin film formed of several layers. You can

【０００８】また、この遷移層は、基板側に配置された
凹凸を有する第１の材質の部分と、これに対応する逆向
きの凹凸を有し、基板と逆の側に配置された第２の材質
の部分とより構成し、第１の材質の屈折率を基板の屈折
率と同じか又は第２の材質の屈折率よりも基板の屈折率
に近くすることが好ましい。第１の材質の部分は、基板
そのものを用いて形成されたもの、例えば、基板表面に
凹凸を形成したものでもよく、基板表面に他の材質のも
のを付けたものでもよい。第２の材質の部分は、空気で
あってもよく、他の材質のもので基板表面の凹凸の間を
埋めた構造であってもよい。Further, the transition layer has a portion of the first material having irregularities arranged on the substrate side and a corresponding irregularity of opposite direction, and the second layer disposed on the opposite side of the substrate. It is preferable that the refractive index of the first material is the same as the refractive index of the substrate or closer to the refractive index of the substrate than the refractive index of the second material. The portion of the first material may be formed using the substrate itself, for example, the surface of the substrate may be uneven, or the surface of the substrate may be made of another material. The second material portion may be air, or may have a structure in which the unevenness on the substrate surface is filled with another material.

【０００９】この凹凸の形状は、第２の材質の部分の平
面上に占める面積が遷移層の表面から基板の方向に向か
って減少するように構成することが好ましい。凹凸の繰
り返し幅は、光閉じ込めを行なう主な光が可視光である
とき、１μｍ以下とすることが好ましい。It is preferable that the shape of the unevenness is configured such that the area occupied by the second material portion on the plane decreases from the surface of the transition layer toward the substrate. The repeating width of the irregularities is preferably 1 μm or less when the main light for confining light is visible light.

【００１０】また、本発明の光閉込め構造は、基板の裏
面に光閉じ込めを行なう主な光の波長より大きな繰返し
幅を持つ第２の凹凸を設けることが出来る。さらに、基
板の裏面に光反射層を設けることが出来る。In the light confining structure of the present invention, the second concavity and convexity having a repetition width larger than the wavelength of the main light for confining light can be provided on the back surface of the substrate. Further, a light reflecting layer can be provided on the back surface of the substrate.

【００１１】さらに本発明の受光素子は、上記の光閉込
め構造を用い、基板を第１導電型とするとき、第１導電
型と逆の導電型の第２導電型領域を基板に設け、望まし
くはさらに高濃度の第１導電型領域を基板に設け、これ
らと接続する電極を設けて構成される。Further, the light receiving element of the present invention uses the above-mentioned light confining structure, and when the substrate is of the first conductivity type, the substrate is provided with a second conductivity type region having a conductivity type opposite to the first conductivity type. Desirably, the first conductivity type region of higher concentration is provided on the substrate, and an electrode connected to these regions is provided.

【００１２】[0012]

【作用】図１〜６を用いて本発明の作用を説明する。図
１（ａ）、（ｂ）は、基板表面近傍の部分斜視図及びそ
の断面図である。基板３に外部媒質１から光４が入射す
る場合、基板表面の凹凸の繰り返し幅７が光の波長より
小さいと、光学的には、遷移層２の屈折率が表面から基
板に向って連続的に変化した場合と同様に作用する。つ
まり、図のように第２の媒質５と第１の媒質６の割合が
基板に向って次第に変化する場合に、第２の媒質５の持
つ屈折率から第１の媒質６の持つ屈折率に、屈折率が直
線的に変化する膜と等価な遷移層２が形成される。The operation of the present invention will be described with reference to FIGS. 1A and 1B are a partial perspective view and a cross-sectional view of the vicinity of the substrate surface. When the light 4 is incident on the substrate 3 from the external medium 1 and the repeating width 7 of the irregularities on the substrate surface is smaller than the wavelength of light, the refractive index of the transition layer 2 is optically continuous from the surface toward the substrate. Works the same as when changed to. That is, when the ratio between the second medium 5 and the first medium 6 gradually changes toward the substrate as shown in the figure, the refractive index of the second medium 5 is changed to the refractive index of the first medium 6. A transition layer 2 equivalent to a film whose refractive index changes linearly is formed.

【００１３】屈折率の遷移層内での変化の様子は、第１
の媒質と第２の媒質の混ざり方で決定される。２種類の
媒質で構成される膜ではその実効的な屈折率は各々の媒
質の平均値で表される。図２（ａ）、（ｂ）、（ｃ）、
（ｄ）、（ｅ）、（ｆ）に示すように、それぞれ第１の
媒質６が、矩形、三角溝、ピラミッド、半球、球、逆ピ
ラミッド等の形状を持つ場合には、第２の媒質５の屈折
率を１．０、第１の媒質６の屈折率を３．５とすると、
図３に示す様な実効的な屈折率を持つことになる。The change of the refractive index in the transition layer is as follows.
It is determined by the mixing method of the medium and the second medium. In a film composed of two kinds of media, its effective refractive index is represented by the average value of each medium. 2 (a), (b), (c),
As shown in (d), (e), and (f), when the first medium 6 has a shape such as a rectangle, a triangular groove, a pyramid, a hemisphere, a sphere, or an inverted pyramid, the second medium is used. If the refractive index of 5 is 1.0 and the refractive index of the first medium 6 is 3.5,
It has an effective refractive index as shown in FIG.

【００１４】また、ピラミッドと球の形状について外部
媒質１の屈折率１．０、第２の媒質５の屈折率を１．
０、第１の媒質６の屈折率を３．５、基板３の屈折率を
３．５とした場合の反射率の計算値を図４に示す。図４
（ａ）、（ｂ）はピラミッド形状のときの反射率を、図
４（ｃ）、（ｄ）は球形状のときの反射率をそれぞれリ
ニアースケールとログスケールで示したものである。ピ
ラミッド形状では遷移層膜厚が４０ｎｍではやや高い反
射率を示すが、これより厚い膜厚では非常に低い反射率
を示している。球形では、いずれの膜厚においても平均
で１０％を越える反射率になっており、ピラミッド形状
に比べると若干高い反射率を示している。Regarding the shapes of the pyramid and the sphere, the refractive index of the external medium 1 is 1.0 and the refractive index of the second medium 5 is 1.
FIG. 4 shows calculated values of reflectance when the refractive index of the first medium 6 is 0, the refractive index of the first medium 6 is 3.5, and the refractive index of the substrate 3 is 3.5. Figure 4
4A and 4B show the reflectance in the pyramid shape, and FIGS. 4C and 4D show the reflectance in the spherical shape on a linear scale and a log scale, respectively. In the pyramid shape, when the thickness of the transition layer is 40 nm, the reflectance is slightly high, but when the thickness is thicker than this, the reflectance is very low. The spherical shape has an average reflectance of more than 10% at any film thickness, which is slightly higher than that of the pyramidal shape.

【００１５】図５に、ピラミッド形状での吸収光量と遷
移層膜厚との関係を示す。外部媒質１の屈折率１．０、
第１の媒質６の屈折率を３．５、基板３の屈折率を３．
５とし第２の媒質５の屈折率が１．０、１．５の場合に
ついて計算した結果を示す。いずれの場合も、遷移層の
膜厚が数百ｎｍ前後で吸収光量が大きくなりこれより厚
い膜厚ではほぼ１００％吸収する。FIG. 5 shows the relationship between the amount of absorbed light and the thickness of the transition layer in the pyramid shape. The refractive index of the external medium 1 is 1.0,
The first medium 6 has a refractive index of 3.5, and the substrate 3 has a refractive index of 3.
5, the calculation results are shown for the cases where the refractive index of the second medium 5 is 1.0 and 1.5. In either case, the amount of absorbed light becomes large when the film thickness of the transition layer is around several hundred nm, and almost 100% is absorbed when the film thickness is thicker than this.

【００１６】図６に、各形状での吸収光量と遷移膜厚と
の関係を示す。外部媒質１の屈折率１．０、第２の媒質
５の屈折率を１．０、第１の媒質６の屈折率を３．５、
基板３の屈折率を３．５とした場合について計算した結
果を示す。各膜厚での光吸収量はピラミッド形状で一番
高く、逆ピラミッドまではそれぞれ高い吸収量を示して
いる。しかし、矩形と球形では遷移層膜厚を厚くしても
あまり光吸収量は大きくならない。この結果は、第１の
媒質の形状が、図３で右上がりである様な形状をしてい
るものが光吸収量が大きい事を示している。また、特に
図３で右上がりで下に凸の曲線を持つピラミッド形状が
よい結果を示す事から、本遷移層の第１の媒質６の形状
はピラミッド形状、多角錐、円錐や下に凸の線分を回転
して得られる形状の様に、遷移層２表面付近での第２の
媒質５の基板方向への面積の減少の割合が遷移層２裏面
付近でのその減少の割合より大きい形状が好ましいこと
が分かった。FIG. 6 shows the relationship between the amount of absorbed light and the transition film thickness in each shape. The refractive index of the external medium 1 is 1.0, the refractive index of the second medium 5 is 1.0, the refractive index of the first medium 6 is 3.5,
The result of calculation when the refractive index of the substrate 3 is 3.5 is shown. The light absorption amount at each film thickness is the highest in the pyramid shape, and the absorption amount is high up to the inverted pyramid. However, in the rectangular and spherical shapes, the light absorption amount does not increase so much even if the transition layer film thickness is increased. This result shows that the amount of light absorption is large when the shape of the first medium is such that the shape is upward to the right in FIG. Further, in particular, in FIG. 3, a pyramid shape having an upwardly-sloping and downwardly-convex curve shows a good result. A shape in which the rate of decrease in the area of the second medium 5 in the substrate direction in the vicinity of the surface of the transition layer 2 is larger than the rate of decrease in the vicinity of the back surface of the transition layer 2, such as the shape obtained by rotating the line segment. Was found to be preferable.

【００１７】具体的な基板形状を、図７を用いて説明す
る。図７（ａ）に示すように、基板上に繰り返し幅７が
小さい凹凸から成る遷移層２を設ける。これにより、遷
移層２の屈折率は上から下に向って外気の屈折率から基
板３の屈折率まで連続的に変化する。この遷移層により
基板３に入射する光４は、基板表面でほとんど反射する
ことなく基板内へ入射する。また、繰り返し幅７が入射
光の波長より小さいため、入射した光は基板表面の凹凸
により形成される斜面で斜めに反射されることなく入射
した角度で基板裏面まで直進する。A specific substrate shape will be described with reference to FIG. As shown in FIG. 7A, a transition layer 2 having irregularities with a small repeating width 7 is provided on the substrate. As a result, the refractive index of the transition layer 2 continuously changes from the refractive index of the outside air to the refractive index of the substrate 3 from top to bottom. The light 4 incident on the substrate 3 due to this transition layer is incident on the substrate with almost no reflection on the substrate surface. Further, since the repeating width 7 is smaller than the wavelength of the incident light, the incident light goes straight to the back surface of the substrate at the incident angle without being obliquely reflected by the slope formed by the unevenness of the substrate surface.

【００１８】この基板に、図７（ｂ）のような周期的
で、入射光の波長より大きい繰り返し幅を持つ凹凸８を
形成することにより、裏面で反射された光が斜めに基板
内を進み、基板表面へ達する。このときの入射角度が臨
界角より大きい場合、光は全反射されて再び基板内を進
む。このようにして、一度入射した光は基板３に効率よ
く閉じ込められる。また、図７（ｃ）のように裏面に入
射光の波長より大きい繰り返し幅を持つ不規則な凹凸９
を形成することにより、裏面で光が散乱反射され、大部
分の光が基板表面に達したときに臨界角より大きい入射
角を持つため、基板内へ再び反射されて、入射した光が
基板３に効率よく閉じ込められる。これらの構成では、
裏面に反射鏡を形成することで、より確実に裏面で光を
反射することができる。By forming the unevenness 8 having a periodical repeating width larger than the wavelength of the incident light as shown in FIG. 7B on this substrate, the light reflected on the back surface advances obliquely in the substrate. , Reach the substrate surface. If the incident angle at this time is larger than the critical angle, the light is totally reflected and travels inside the substrate again. In this way, the light that has once entered is efficiently confined in the substrate 3. Further, as shown in FIG. 7C, irregular irregularities 9 having a repeating width larger than the wavelength of incident light on the back surface.
By forming the film, light is scattered and reflected on the back surface, and when most of the light reaches the surface of the substrate, it has an incident angle larger than the critical angle. Efficiently trapped in. In these configurations,
By forming the reflecting mirror on the back surface, it is possible to more reliably reflect the light on the back surface.

【００１９】[0019]

【実施例】〈実施例１〉図８を用いて本発明の一実施例
を説明する。本実施例では、表面が（１００）面シリコ
ン基板３の上に、遷移層を構成する、規則的な幅、大き
さのピラミッド１１を形成した。このピラミッドは、裏
面をマスクして、表面だけをアルカリ性のエッチング液
で加工することにより容易に形成することができる。ま
た、アンモニヤやヒドラジンを主成分とする加熱した水
溶液をエッチング液として用いて、加工を行なうことに
より１μｍ以下の微小なピラミッド１１を容易に形成す
ることが出来る。[Embodiment 1] An embodiment of the present invention will be described with reference to FIG. In this example, the pyramid 11 having a regular width and size, which constitutes a transition layer, was formed on the (100) plane silicon substrate 3. This pyramid can be easily formed by masking the back surface and processing only the front surface with an alkaline etching solution. In addition, a minute pyramid 11 having a size of 1 μm or less can be easily formed by performing processing using a heated aqueous solution containing ammonium or hydrazine as a main component as an etching solution.

【００２０】このようにして得られたシリコン基板３の
表面のピラミッド１１の平均のサイズは、ＳＥＭ（走査
型電子顕微鏡）による測定では約０．３μｍであった。
このシリコン基板の表面反射率を測定したところ、０．
４〜１．１μｍの波長範囲で表面反射率が著しく低下し
た。また、シリコン基板３表面に薄い酸化膜による皮膜
を設けたところ、遷移層２内の屈折率の変化が急峻にな
り、さらに表面反射率が低下した。The average size of the pyramids 11 on the surface of the silicon substrate 3 thus obtained was about 0.3 μm as measured by SEM (scanning electron microscope).
The surface reflectance of this silicon substrate was measured and found to be 0.
The surface reflectance was significantly reduced in the wavelength range of 4 to 1.1 μm. Further, when a thin oxide film was formed on the surface of the silicon substrate 3, the change in the refractive index in the transition layer 2 became sharp, and the surface reflectance was further lowered.

【００２１】〈実施例２〉図９を用いて本発明の他の実
施例を説明する。本実施例ではシリコン基板３の上に断
面が主に三角形をした、不規則な大きさの微小凹凸１
１’を形成した。微小凹凸１１’はＣＶＤ（化学気相成
長）法を用いた堆積膜により形成した。膜の材質は、Ｉ
ＴＯ、ＺｎＯ2等の透明で比較的屈折率の高い材料を用
いた。微小凹凸１１’のサイズは堆積速度や温度、ガス
圧等により平均で約０．５μｍにすることが出来た。ま
た、表面保護を兼ねて充填材（図示せず）で微小凹凸１
１’の間を埋めた。この充填材にはＳｉＯ2等の屈折率
の比較的小さい材料をスピン塗布法やＣＶＤ法等で形成
した。このシリコン基板の表面反射率も０．４〜１．１
μｍの波長範囲で著しく低下した。<Embodiment 2> Another embodiment of the present invention will be described with reference to FIG. In this embodiment, irregularly-sized minute irregularities 1 having a triangular cross section on the silicon substrate 3 are used.
1'is formed. The fine irregularities 11 'are formed by a deposited film using a CVD (chemical vapor deposition) method. The material of the film is I
A transparent material having a relatively high refractive index such as TO or ZnO 2 was used. The size of the fine irregularities 11 ′ could be about 0.5 μm on average depending on the deposition rate, temperature, gas pressure and the like. In addition, a minute unevenness 1 is provided with a filler (not shown) for the purpose of surface protection.
I filled the space between 1 '. As the filler, a material having a relatively small refractive index such as SiO 2 was formed by a spin coating method, a CVD method or the like. The surface reflectance of this silicon substrate is also 0.4 to 1.1.
Remarkably decreased in the wavelength range of μm.

【００２２】〈実施例３〉図１０を用いて本発明のさら
に他の実施例を説明する。本実施例では、実施例２で述
べたシリコン基板３の裏面に繰り返し幅が２μｍのＶ溝
１３を形成した。これにより、表面から入射した光は、
裏面で反射され、再び表面に達すると全反射され、シリ
コン基板内に閉じ込められる。Ｖ溝１３は通常のホトレ
ジストを用いたエッチングマスクを用いて容易に形成す
ることが出来た。この場合、ホトレジストでなく印刷レ
ジストでもよい。また、裏面形状はＶ溝のみならず逆ピ
ラミッドや半円等の形状でもよく、その繰り返し幅が入
射光の波長より大きいサイズであればよい。また、裏面
での反射率を高めるために裏面反射鏡１４を形成した。<Embodiment 3> Still another embodiment of the present invention will be described with reference to FIG. In this embodiment, the V groove 13 having a repeating width of 2 μm is formed on the back surface of the silicon substrate 3 described in the second embodiment. As a result, the light incident from the surface is
The light is reflected on the back surface, is totally reflected when it reaches the front surface again, and is confined in the silicon substrate. The V groove 13 could be easily formed by using an etching mask using an ordinary photoresist. In this case, a printing resist may be used instead of the photoresist. The shape of the back surface is not limited to the V-shaped groove, but may be an inverted pyramid, a semicircle, or the like, as long as the repeating width is larger than the wavelength of the incident light. Further, the back surface reflecting mirror 14 is formed in order to increase the reflectance on the back surface.

【００２３】〈実施例４〉図１１を用いて本発明のさら
に他の実施例を説明する。本実施例では、シリコン基板
３の裏面にピラミッド状の凹凸１５を形成した。この凹
凸１５の材質には透明なガラスを用い、シリコン基板３
に接着した。これにより、シリコン基板３を加工するこ
となく容易に光トラップ構造を形成する事が出来た。ま
た、実施例３と同じように、裏面反射鏡（図示せず）を
形成した。<Embodiment 4> Still another embodiment of the present invention will be described with reference to FIG. In this example, pyramid-shaped irregularities 15 were formed on the back surface of the silicon substrate 3. Transparent glass is used for the material of the unevenness 15, and the silicon substrate 3 is used.
Glued to. Thereby, the optical trap structure could be easily formed without processing the silicon substrate 3. Further, as in Example 3, a back surface reflecting mirror (not shown) was formed.

【００２４】〈実施例５〉図１２を用いて本発明の受光
素子の一実施例を説明する。実施例３と同様に、ｐ型シ
リコン基板２１の上に、断面が主に三角形をした、不規
則な大きさの微小凹凸１１’を、裏面に繰り返し幅が２
μｍのＶ溝を形成した（実施例３に示した裏面反射鏡は
形成しない）。次に、高濃度ｐ型層１９、高濃度ｎ型層
２０を熱拡散法で形成し、ｐ型シリコン基板２１の表面
及び裏面にパッシベーシヨン酸化膜１８（表面の酸化膜
は図示せず）を設け、所定の位置の酸化膜１８に穴開け
して、電極１６、１７を真空蒸着法により形成し、受光
素子を形成した。この受光素子は、微小凹凸１１’から
なる遷移層を設けない従来の受光素子よりも光電変換効
率が向上した。<Embodiment 5> An embodiment of the light receiving element of the present invention will be described with reference to FIG. Similar to the third embodiment, irregularly-sized minute irregularities 11 ′ having a triangular shape in cross section are formed on the p-type silicon substrate 21, and a repeating width is 2 on the back surface.
A V-groove of μm was formed (the back reflector shown in Example 3 was not formed). Next, the high-concentration p-type layer 19 and the high-concentration n-type layer 20 are formed by the thermal diffusion method, and the passivation oxide film 18 (the oxide film on the surface is not shown) is provided on the front surface and the back surface of the p-type silicon substrate 21. A hole was formed in the oxide film 18 at a predetermined position, and the electrodes 16 and 17 were formed by a vacuum evaporation method to form a light receiving element. This light receiving element has improved photoelectric conversion efficiency as compared with the conventional light receiving element in which the transition layer formed of the minute irregularities 11 'is not provided.

【００２５】なお、上記以外の形状の微小凹凸、すなわ
ち、三角溝、球、半球、逆ピラミッド、矩形を有する遷
移層を持つｐ型シリコン基板を用いて、同様に受光素子
を形成したが、いずれも従来の受光素子よりも光電変換
効率が向上した。A light-receiving element was formed in the same manner using a p-type silicon substrate having a transition layer having minute irregularities of shapes other than the above, that is, triangular grooves, spheres, hemispheres, inverted pyramids, and rectangles. Also, the photoelectric conversion efficiency is improved as compared with the conventional light receiving element.

【００２６】以上の実施例で基板としてシリコンを用い
たが、シリコンの他に、ガリウムヒソ、インジュウムリ
ン、ＣｕＩｎＳ、ＣｄＳ等の単結晶、多結晶、非晶質の
単原子、多元系等の半導体や、ガラス、プラスチック等
の絶縁性のもの等、どのような材質のものであってもよ
いことは言うまでもない。また、表面凹凸、裏面凹凸の
構造は上記で説明した構造のいずれかの組み合わせであ
ってもよく、凹凸の断面形状も、図２で説明した形状
や、それに類似した規則的、不規則ないかなる形状であ
ってもよいことは言うまでもない。Although silicon is used as the substrate in the above embodiments, in addition to silicon, semiconductors such as gallium arsenide, indium phosphide, CuInS, CdS, etc., such as single crystals, polycrystals, amorphous monoatoms, and multielement semiconductors Needless to say, it may be made of any material such as an insulating material such as glass or plastic. Further, the structure of the surface unevenness and the backside unevenness may be any combination of the structures described above, and the cross-sectional shape of the unevenness may be the shape described in FIG. 2 or any similar regular or irregular shape. It goes without saying that it may be shaped.

【００２７】[0027]

【発明の効果】本発明の構造を用いることにより、光セ
ンサー、受電変換装置等の受光装置や光励起レーザー等
の光−光変換装置等において光を有効に閉じ込める必要
がある場合に、有効に光閉じ込めを行なうことが出来
た。また、このような光閉込め構造を用いた本発明の受
光素子は、光電変換効率を向上させることが出来た。INDUSTRIAL APPLICABILITY By using the structure of the present invention, when it is necessary to effectively confine light in an optical sensor, a light receiving device such as a power receiving conversion device or a light-to-light conversion device such as a photoexcitation laser, it is possible to effectively use I was able to confine it. Further, the light receiving element of the present invention using such a light confining structure could improve the photoelectric conversion efficiency.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の原理を説明する概念図。FIG. 1 is a conceptual diagram illustrating the principle of the present invention.

【図２】本発明の原理を説明する概念図。FIG. 2 is a conceptual diagram illustrating the principle of the present invention.

【図３】本発明の効果を説明する計算結果の一例を示す
図。FIG. 3 is a diagram showing an example of calculation results for explaining the effect of the present invention.

【図４】本発明の効果を説明する計算結果の一例を示す
図。FIG. 4 is a diagram showing an example of calculation results for explaining the effect of the present invention.

【図５】本発明の効果を説明する計算結果の一例を示す
図。FIG. 5 is a diagram showing an example of calculation results for explaining the effect of the present invention.

【図６】本発明の効果を説明する計算結果の一例を示す
図。FIG. 6 is a diagram showing an example of calculation results for explaining the effect of the present invention.

【図７】本発明の原理を説明する概念図。FIG. 7 is a conceptual diagram illustrating the principle of the present invention.

【図８】本発明の光閉込め構造の一実施例の断面模式
図。FIG. 8 is a schematic sectional view of an embodiment of the light confining structure of the present invention.

【図９】本発明の光閉込め構造の他の実施例の断面模式
図及び斜視図。FIG. 9 is a schematic sectional view and a perspective view of another embodiment of the light confining structure of the present invention.

【図１０】本発明の光閉込め構造の一実施例の斜視図。FIG. 10 is a perspective view of an embodiment of the light confining structure of the present invention.

【図１１】本発明の光閉込め構造の一実施例の斜視図。FIG. 11 is a perspective view of an embodiment of the light confining structure of the present invention.

【図１２】本発明の受光素子の一実施例の斜視図。FIG. 12 is a perspective view of an embodiment of a light receiving element of the present invention.

【符号の説明】[Explanation of symbols]

１…外部媒質 ２…遷移層 ３…基板 ４…光 ５…第２の媒質 ６…第１の媒質 ７…繰り返し幅 ８、９、１５…凹凸 １１…ピラミッド １１’…微小凹凸 １３…Ｖ溝 １４…裏面反射鏡 １６、１７…電極 １８…酸化膜 １９…高濃度ｐ型層 ２０…高濃度ｎ型層 ２１…ｐ型シリコン基板 DESCRIPTION OF SYMBOLS 1 ... External medium 2 ... Transition layer 3 ... Substrate 4 ... Light 5 ... 2nd medium 6 ... 1st medium 7 ... Repeat width 8, 9, 15 ... Concavo-convex 11 ... Pyramid 11 '... Micro concavo-convex 13 ... V groove 14 Backside reflecting mirror 16, 17 ... Electrode 18 ... Oxide film 19 ... High concentration p-type layer 20 ... High concentration n-type layer 21 ... P-type silicon substrate

フロントページの続き (72)発明者 永田 寧 千葉県茂原市早野3681番地 日立デバイス エンジニアリング株式会社内Front page continuation (72) N. Nagata Inventor, Hitachi Device Engineering Co., Ltd. 3681 Hayano, Mobara-shi, Chiba

Claims (10)

【特許請求の範囲】[Claims] 【請求項１】基板及び該基板表面に設けられた、凹凸を
有する遷移層からなり、該凹凸の繰り返し幅は、光閉じ
込めを行なう主な光の波長以下であることを特徴とする
光閉込め構造。1. A light confinement comprising a substrate and a transition layer provided on the surface of the substrate and having irregularities, wherein the repeating width of the irregularities is not more than the wavelength of the main light for confining light. Construction. 【請求項２】請求項１記載の光閉込め構造において、上
記遷移層の屈折率は、基板側と逆の側から基板側に向か
って、基板の屈折率に近づくように変化することを特徴
とする光閉込め構造。2. The light confinement structure according to claim 1, wherein the refractive index of the transition layer changes from the side opposite to the substrate side toward the substrate side so as to approach the refractive index of the substrate. The light confinement structure. 【請求項３】請求項１記載の光閉込め構造において、上
記遷移層は、基板側に配置された凹凸を有する第１の材
質の部分と、これに対応する逆向きの凹凸を有し、基板
と逆の側に配置された第２の材質の部分とよりなり、該
第１の材質の屈折率は、基板の屈折率と同じか又は該第
２の材質の屈折率よりも基板の屈折率に近いことを特徴
とする光閉込め構造。3. The light confinement structure according to claim 1, wherein the transition layer has a first material portion having irregularities arranged on the substrate side and corresponding irregularities in opposite directions, The second material is disposed on the side opposite to the substrate, and the refractive index of the first material is the same as the refractive index of the substrate or the refractive index of the substrate is higher than that of the second material. Light confinement structure characterized by close to the rate. 【請求項４】請求項３記載の光閉込め構造において、上
記凹凸の形状を、上記第２の材質の部分の平面上に占め
る面積が上記遷移層の表面から基板の方向に向かって減
少するように構成することを特徴とする光閉込め構造。4. The light confining structure according to claim 3, wherein an area occupied by the uneven shape on the plane of the second material portion decreases from the surface of the transition layer toward the substrate. An optical confinement structure characterized by being configured as follows. 【請求項５】請求項４記載の光閉込め構造において、上
記凹凸の形状を、上記第２の材質の部分の平面上に占め
る面積の上記遷移層の表面から基板の方向に向かって減
少する割合が遷移層の裏面付近より表面付近で大きいよ
うに構成することを特徴とする光閉込め構造。5. The light confining structure according to claim 4, wherein the shape of the unevenness decreases from the surface of the transition layer in the area occupied by the second material portion on the plane toward the substrate. An optical confinement structure characterized in that the proportion is larger near the front surface than near the back surface of the transition layer. 【請求項６】請求項１記載の光閉込め構造において、上
記凹凸は、その断面形状が実質的に三角であることを特
徴とする光閉込め構造。6. The light confining structure according to claim 1, wherein the irregularities have a substantially triangular cross-sectional shape. 【請求項７】請求項１から６のいずれか一に記載の光閉
込め構造において、上記光閉じ込めを行なう主な光は、
可視光であり、上記凹凸の繰り返し幅は、１μｍ以下で
あることを特徴とする光閉込め構造。7. In the light confining structure according to any one of claims 1 to 6, the main light for confining the light is
A light confining structure that is visible light and has a repeating width of the irregularities of 1 μm or less. 【請求項８】請求項１から７のいずれか一に記載の光閉
込め構造において、上記基板は、その裏面に光閉じ込め
を行なう主な光の波長より大きな繰返し幅を持つ第２の
凹凸を有することを特徴とする光閉込め構造。8. The light confinement structure according to claim 1, wherein the substrate has a second concave and convex portion having a repetition width larger than a main light wavelength for optical confinement on the back surface thereof. An optical confinement structure characterized by having. 【請求項９】請求項１から８のいずれか一に記載の光閉
込め構造において、上記基板は、その裏面に光反射層を
有することを特徴とする光閉込め構造。9. The light confining structure according to claim 1, wherein the substrate has a light reflecting layer on its back surface. 【請求項１０】請求項１から７のいずれか一に記載の光
閉込め構造を用いた受光素子であって、上記基板は第１
導電型であり、上記基板に設けられた第２導電型領域及
びこれと接続する電極を有することを特徴とする受光素
子。10. A light-receiving element using the light confining structure according to claim 1, wherein the substrate is a first light-receiving element.
A light receiving element which is of a conductive type and has a second conductive type region provided on the substrate and an electrode connected to the second conductive type region.
JP02909293A 1993-02-18 1993-02-18 Light receiving element Expired - Fee Related JP3526308B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02909293A JP3526308B2 (en) 1993-02-18 1993-02-18 Light receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02909293A JP3526308B2 (en) 1993-02-18 1993-02-18 Light receiving element

Publications (2)

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