CN220233206U - Optical trap type multi-reflection layer-increasing nano array - Google Patents
Optical trap type multi-reflection layer-increasing nano array Download PDFInfo
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- CN220233206U CN220233206U CN202321711471.4U CN202321711471U CN220233206U CN 220233206 U CN220233206 U CN 220233206U CN 202321711471 U CN202321711471 U CN 202321711471U CN 220233206 U CN220233206 U CN 220233206U
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- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- 238000010586 diagram Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
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Abstract
The utility model discloses an optical trap type multi-reflection layer-added nano array, which comprises a diode structure: the upper side of the diode structure is fixedly connected with a light introducing layer, the light introducing layers are fixedly connected to the upper side of the diode structure and positioned on the side edges of the light introducing layer, the light introducing layer consists of protrusions of a triangular zigzag structure, and the light introducing layer consists of three tubes for reflecting light. The light-introducing layer with the triangular zigzag bumps and the light-introducing layer which are three tubes are provided with the diode structure, so that the refraction quantity of incident light is increased, the light path of the incident light is conveniently increased, and the doubling efficiency of the multiplication layer is increased.
Description
Technical Field
The utility model relates to the field of optoelectronic devices, in particular to an optical trap type multi-reflection layer increasing nano array.
Background
A diode is an electronic device made of semiconductor materials (silicon, selenium, germanium, etc.). The diode has two electrodes, an anode, also called anode; the negative electrode, called the cathode, turns on the diode when a forward voltage is applied between the two poles of the diode, and turns off the diode when a reverse voltage is applied.
The multilayer reverse optical trap type nano array is common in a photodiode structure by changing the structure of a traditional photodiode, and the photodiode structure is provided with a substrate, a light absorption layer, a multiplication layer and the like.
The incident light enters the diode, and the light path is less because the refraction of the light absorption layer to the incident light is less, and the multiplication efficiency of the multiplication layer to the light is not high.
Disclosure of Invention
In order to overcome the defects of less refraction of incident light and less light paths in the prior art, one of the purposes of the utility model is to provide an optical trap type multi-reflection-layer nano array.
One of the purposes of the utility model is realized by adopting the following technical scheme: an optical trap type multi-reflection enhancement layer nano-array, comprising a diode structure: the upper side of the diode structure is fixedly connected with a light guide layer, and the light guide layers are fixedly connected to the upper side of the diode structure and the side edges of the light guide layer;
the light introducing layer is composed of projections of triangular zigzag structure, and the light introducing layer is composed of three tubes reflecting light.
According to the optical trap type multi-reflection-layer nano array, the number of the light introducing layers is two.
According to the optical trap type multi-reflection layer nano array, the optical introducing layer is arranged in an inclined structure.
According to the optical trap type multi-reflection layer-added nano array, the protrusions of the triangular zigzag structure are composed of two triangular structure protrusions.
According to the optical trap type multi-reflection layer nano array, the number of the protrusions of the triangular zigzag structure is multiple.
The beneficial effects are that:
the light-introducing layer with the triangular zigzag bumps and the light-introducing layer which are three tubes are provided with the diode structure, so that the refraction quantity of incident light is increased, the light path of the incident light is conveniently increased, and the doubling efficiency of the multiplication layer is increased.
Additional aspects and advantages of the utility model will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the utility model.
Drawings
The utility model is further described below with reference to the drawings and examples;
FIG. 1 is a block diagram of an embodiment one;
FIG. 2 is a schematic diagram showing incident light reflection of a sawtooth block in one embodiment;
FIG. 3 is a microstructure of a light introducing layer in one implementation;
FIG. 4 is a schematic diagram of reflection of incident light in an embodiment;
FIG. 5 is a block diagram of an implementation II;
fig. 6 is an enlarged view at B in fig. 5.
Legend description:
1. a diode structure; 2. a light introducing layer; 3. the light-guiding layer.
Detailed Description
Reference will now be made in detail to the present embodiments of the present utility model, examples of which are illustrated in the accompanying drawings, wherein the accompanying drawings are used to supplement the description of the written description so that one can intuitively and intuitively understand each technical feature and overall technical scheme of the present utility model, but not to limit the scope of the present utility model.
Referring to fig. 1-4, one is implemented:
an optical trap type multi-reflection layer-added nano array comprises a diode structure 1: the upper side fixedly connected with light introducing layer 3 of diode structure 1, diode structure 1 upside and lie in the side of light introducing layer 3 and all fixedly connected with light introducing layer 2, the quantity of light introducing layer 2 has two, light introducing layer 2 is the slope structure setting, the protruding of triangle zigzag structure is constituteed by two triangle structural bumps, the protruding quantity of triangle zigzag structure has a plurality ofly, the three piece reflection-type optical trap circuit spotlight that light introducing layer 2 constitutes, introduce light introducing layer 3 can include in a plurality of triangle zigzag protruding, in order to refract when incident light gets into photodiode structure 1 incident light in order to increase its light path.
The light-introducing layer 3 is composed of projections of a triangular zigzag structure for refracting incident light to increase its optical path when the incident light enters the photodiode structure 1, and the materials of the triangular zigzag projections include InP, gaAs, si, ge, inGaAs and InGaAsP. In addition, the increased optical path can be expressed as d (sec [ (sec)) 3 / 4 θ) -1), where d is the thickness of the photodiode structure, θ1 is the incident angle of the incident light, and θ2 is the refraction angle of the refracted light.
The light introducing layer 2 is composed of three light-reflecting tubes forming a three-sheet reflective optical trap circuit and patterned to form a textured surface for changing the angle of incident light to increase the optical path of the incident light when it enters the photodiode structure.
As shown in FIG. 3, the incident beam is reflected 5 times to a final reflectance of about 2.43×10 -3 . Except that the first two plates of the 3 rd plate tube are relatively rotated by 90 deg., the dependence on the polarization of the incident beam is basically eliminated. The absorption efficiency and multiplication efficiency of light are improved by eroding three reflective optical trap circuits in the light introducing layer 2.
Referring to fig. 5-6, two are implemented:
on the basis of the implementation one, the light introducing layer 2 is provided with a curved surface-shaped structure, and the optical path of incident light is increased.
Working principle: when in use, incident light irradiates on the three reflective optical trap circuits on the light introducing layer 2, and then the reflected light is gathered on the triangular sawtooth projections on the light introducing layer 3, so that the incident light is refracted, the light path of the incident light is increased, and the absorption efficiency and multiplication efficiency of the light are improved.
The embodiments of the present utility model have been described in detail with reference to the accompanying drawings, but the present utility model is not limited to the above embodiments, and various changes can be made within the knowledge of one of ordinary skill in the art without departing from the spirit of the present utility model.
Claims (5)
1. The optical trap type multi-reflection layer-added nano array is characterized by comprising a diode structure (1): the upper side of the diode structure (1) is fixedly connected with a light guide layer (3), and the light guide layers (2) are fixedly connected to the upper side of the diode structure (1) and the side edges of the light guide layer (3);
the light-introducing layer (3) consists of protrusions of triangular zigzag structure, and the light-introducing layer (2) consists of three tubes reflecting light.
2. The optical trap type multi-reflection-layer nano-array according to claim 1, wherein the number of the light introducing layers (2) is two.
3. The optical trap type multi-reflection-layer nano-array according to claim 1, wherein the light introducing layer (2) is arranged in an inclined structure.
4. The optical trap type multi-reflection-enhanced nano-array according to claim 1, wherein the protrusions of the triangular zigzag structure are composed of two triangular structure protrusions.
5. The optical trap type multi-reflection nano-array according to claim 1, wherein the number of the protrusions of the triangular zigzag structure is plural.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321711471.4U CN220233206U (en) | 2023-07-03 | 2023-07-03 | Optical trap type multi-reflection layer-increasing nano array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321711471.4U CN220233206U (en) | 2023-07-03 | 2023-07-03 | Optical trap type multi-reflection layer-increasing nano array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220233206U true CN220233206U (en) | 2023-12-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321711471.4U Active CN220233206U (en) | 2023-07-03 | 2023-07-03 | Optical trap type multi-reflection layer-increasing nano array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220233206U (en) |
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2023
- 2023-07-03 CN CN202321711471.4U patent/CN220233206U/en active Active
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