JPH0469410B2 - - Google Patents
Info
- Publication number
- JPH0469410B2 JPH0469410B2 JP8811483A JP8811483A JPH0469410B2 JP H0469410 B2 JPH0469410 B2 JP H0469410B2 JP 8811483 A JP8811483 A JP 8811483A JP 8811483 A JP8811483 A JP 8811483A JP H0469410 B2 JPH0469410 B2 JP H0469410B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- coating
- ray
- absorbing member
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 17
- 239000010931 gold Substances 0.000 description 17
- 229910052737 gold Inorganic materials 0.000 description 17
- 229920001721 polyimide Polymers 0.000 description 6
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000011358 absorbing material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Description
【発明の詳細な説明】
［発明の技術分野］
本発明は、Ｘ線露光に使用されるＸ線露光用マ
スクの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing an X-ray exposure mask used for X-ray exposure.
［発明の技術的背景とその問題点］
近時、より高性能な半導体集積回路を製造する
ために、１［μｍ］或いはそれ以下の寸法を有す
る微細パターンを、半導体基板上に形成する要求
が高まつている。Ｘ線（主に波長４〜13Åの軟Ｘ
線）を使用したパターン転写技術であるＸ線露光
は、塵埃の影響を受けにくい、転写されたパター
ンの精度が極めて高い等の多くの特徴があり、特
にサブミクロンパターン形成において有力な技術
とされている。[Technical background of the invention and its problems] Recently, in order to manufacture higher-performance semiconductor integrated circuits, there has been a demand for forming fine patterns with dimensions of 1 [μm] or less on semiconductor substrates. It's increasing. X-rays (mainly soft X-rays with a wavelength of 4 to 13 Å)
X-ray exposure, which is a pattern transfer technology using X-rays (rays), has many characteristics such as being less susceptible to dust and having extremely high precision in the transferred patterns, and is considered to be a particularly effective technology for forming submicron patterns. ing.
第１図はＸ線露光の原理を示す模式図である。
図中１はＸ線露光用マスクで、このマスク１はＸ
線に対し透過率の高い材料からなる薄膜基板２を
支持環３に固定すると共に、薄膜基板２の下面に
Ｘ線吸収部材、例えば厚さ0.5〜1.0［μｍ］の金
からなる所望のマスクパターン４を取着して形成
されている。マスク１の下方にはレジスタ５を塗
布された試料６が配置され、またマスク１の上方
にはＸ線源７が配置される。そして、Ｘ線源７か
らマスク１にＸ線を照射することにより、マスク
１を透過したＸ線が試料６上のレジスト５に照射
され、同レジスタ５にパターン４が露光されるこ
とになる。 FIG. 1 is a schematic diagram showing the principle of X-ray exposure.
1 in the figure is a mask for X-ray exposure, and this mask 1
A thin film substrate 2 made of a material with high transmittance for radiation is fixed to a support ring 3, and a desired mask pattern made of an X-ray absorbing material, for example, gold with a thickness of 0.5 to 1.0 [μm] is placed on the lower surface of the thin film substrate 2. 4 is attached. A sample 6 coated with a resistor 5 is placed below the mask 1, and an X-ray source 7 is placed above the mask 1. Then, by irradiating the mask 1 with X-rays from the X-ray source 7, the X-rays that have passed through the mask 1 are irradiated onto the resist 5 on the sample 6, and the pattern 4 is exposed on the resist 5.
Ｘ線露光用マスクに対する要求として、薄膜基
板上に形成されたＸ線吸収材料から成るマスクパ
ターンの断面形状は矩形でなければならない。前
記第１図に示した如くＸ線源７から発生したＸ線
束７は、薄膜基板３上に形成されたマスクパター
ン４、例えば厚さ0.5［μｍ］の金パターン４ａ，
４ｂの像を、ウエーハ６上に塗布したレジスト５
に形成する。そして、マスクパターン４が金パタ
ーン４ａの如く台形状の断面形状を有する場合、
レジスト５中に転写される像は、δの幅だけ端部
がぼけてしまう。このため、マスクパターン４の
断面は、金パターン４ｂの様に矩形でなければな
らない。 As a requirement for an X-ray exposure mask, the cross-sectional shape of a mask pattern made of an X-ray absorbing material formed on a thin film substrate must be rectangular. As shown in FIG. 1, the X-ray flux 7 generated from the X-ray source 7 is transmitted to a mask pattern 4 formed on a thin film substrate 3, such as a gold pattern 4a with a thickness of 0.5 [μm],
4b is applied to the resist 5 on the wafer 6.
to form. When the mask pattern 4 has a trapezoidal cross-sectional shape like the gold pattern 4a,
The edges of the image transferred into the resist 5 are blurred by the width δ. Therefore, the cross section of the mask pattern 4 must be rectangular like the gold pattern 4b.
このような要求、即ち薄膜基板上に、矩形断面
を有するＸ線吸収材料のパターンを形成するため
には、次のような方法が知られている（第42回応
用物理学会学術講演会（1981年）講演予講集9P
−Ｇ−６）この方法では、まず第２図ａに示す如
くシリコン基板１１上に、チタニウム薄膜１２お
よび金薄膜１３を順次蒸着形成し、さらにその上
にプラズマ気相成長法を用いてシリコン窒化膜１
４を形成する。ここで、金薄膜１３は後工程では
金の電気メツキの際の導電層として作用する。ま
た、チタニウム薄膜１２は金薄膜１３とシリコン
基板１１との密着性維持のために必要である。次
いで、第２図ｂに示す如くレジスト１５を回転塗
布しこのレジスト１５を露光現像してレジストパ
ターンを形成する。その後、反応性イオンエツチ
ング技術を用い、第２図ｃに示す如く上記レジス
ト１５をマスクとしてシリコン窒化膜１４を選択
エツチングする。これにより、シリコン窒化膜１
４のエツチング断面形状が矩形状となる。次い
で、金の電気メツキ技術を用い、第２図ｄに示す
如く金膜１６を選択的にシリコン窒化膜１４の溝
部に形成する。続いて、第２図ｅに示す如く全面
にポリイミド膜１７を披着し、さらにシリコ基板
１１の一部を裏面からエツチングし除去する。次
いで、チタニウム薄膜１２および金薄膜１３の露
出した部分を除去することによつて、第２図ｆに
示す如きマスクが作製されることになる。 In order to meet such requirements, that is, to form a pattern of X-ray absorbing material with a rectangular cross section on a thin film substrate, the following method is known (as described in the 42nd Annual Conference of the Japan Society of Applied Physics (1981)). 2017) Lecture preliminaries 9P
-G-6) In this method, first, a titanium thin film 12 and a gold thin film 13 are sequentially deposited on a silicon substrate 11 as shown in FIG. Membrane 1
form 4. Here, the gold thin film 13 acts as a conductive layer during gold electroplating in a subsequent process. Further, the titanium thin film 12 is necessary to maintain adhesion between the gold thin film 13 and the silicon substrate 11. Next, as shown in FIG. 2B, a resist 15 is spin-coated, and this resist 15 is exposed and developed to form a resist pattern. Thereafter, using a reactive ion etching technique, the silicon nitride film 14 is selectively etched using the resist 15 as a mask, as shown in FIG. 2c. As a result, silicon nitride film 1
The etched cross-sectional shape of No. 4 is rectangular. Next, using a gold electroplating technique, a gold film 16 is selectively formed in the groove portion of the silicon nitride film 14, as shown in FIG. 2d. Subsequently, as shown in FIG. 2e, a polyimide film 17 is deposited on the entire surface, and a part of the silicon substrate 11 is etched and removed from the back surface. Next, by removing the exposed portions of the titanium thin film 12 and the gold thin film 13, a mask as shown in FIG. 2f is produced.
しかしながら、この種の製造方法にあつては次
の(1)〜(4)のような問題があつた。 However, this type of manufacturing method has the following problems (1) to (4).
(1) チタニウム薄膜１２及び金薄膜１３を形成す
る工程が必要であり、またこれらの薄膜１２，
１３を最終的に除去する必要があり工程が複雑
である。(1) A process of forming a titanium thin film 12 and a gold thin film 13 is required, and these thin films 12,
13 needs to be removed finally, making the process complicated.
(2) 金薄膜１３の除去時にＸ線吸収部材の金膜１
６も多少エツチングされ、全膜１６の膜厚が減
少する。(2) When removing the gold thin film 13, the gold film 1 of the X-ray absorbing member
6 is also etched to some extent, and the thickness of the entire film 16 is reduced.
(3) 反応性イオンエツチングの条件次第ではエツ
チング終了後の金薄膜１３の表面に変成層或い
は堆積層を生じ、金の電気メツキに支障をきた
す。(3) Depending on the conditions of reactive ion etching, a metamorphosed layer or a deposited layer may be formed on the surface of the gold thin film 13 after etching, which may interfere with gold electroplating.
(4) シリコン基板１１の裏面に金がメツキされる
のを防止するための措置が必要である。(4) Measures must be taken to prevent gold plating on the back side of the silicon substrate 11.
［発明の目的］
本発明の目的は、矩形の断面形状を有するＸ線
吸収部材からなるマスクパターンを容易かつ高精
度に形成することができるＸ線露光用マスクの製
造方法を提供することにある。[Object of the Invention] An object of the present invention is to provide a method for manufacturing an X-ray exposure mask that can easily and accurately form a mask pattern made of an X-ray absorbing member having a rectangular cross-sectional shape. .
［発明の概要］
本発明の骨子は、基板とその上に形成すべきＸ
線吸収部材との間に、基板エツチングの際のマス
クとなるストツパ膜及び導体膜を形成することに
ある。[Summary of the Invention] The gist of the present invention is to provide a substrate and an X to be formed on the substrate.
The purpose is to form a stopper film and a conductor film, which serve as a mask during substrate etching, between the line absorbing member and the line absorbing member.
シリコン基板のエツチングは、通常KOH等の
エツチング溶液で行なわれるが、タングステン等
もシリコンと同様にこのようなエツチング溶液で
エツチングされる性質をもつ。そのため、シリコ
ン基板とＸ線吸収部材との間に耐エツチング性の
高い薄膜がない場合には、シリコン基板のエツチ
ングがＸ線吸収部材とシリコン基板の界面にまで
進行すると、タングステン等のＸ線吸収部材がエ
ツチング溶液に接触しＸ線吸収部材が一部エツチ
ングされることになる。シリコン基板のエツチン
グは均一には進まないため、場所によつてＸ線吸
収部材がエツチングされる時間が異なり、Ｘ線吸
収部材の膜厚がＸ線露光用マスク内で変動し、Ｘ
線マスクの精度が劣化する。このようなＸ線吸収
部材のエツチングを防止するためにシリコン基板
と絶縁性薄膜との間に基板より耐エツチング性の
高い薄膜と導体膜を形成しておく。耐エツチング
性の高い薄膜としてはシリコン酸化膜などを用い
る。導体膜は上述の選択気相成長を行なわせるの
に必要であり、多結晶シリコン膜などを用いるこ
とができる。 Etching of silicon substrates is normally carried out with an etching solution such as KOH, but tungsten and the like also have the property of being etched with such an etching solution, just like silicon. Therefore, if there is no thin film with high etching resistance between the silicon substrate and the X-ray absorbing member, if etching of the silicon substrate progresses to the interface between the X-ray absorbing member and the silicon substrate, the X-ray absorbing material such as tungsten will The member will come into contact with the etching solution and the X-ray absorbing member will be partially etched. Etching of a silicon substrate does not proceed uniformly, so the etching time for the X-ray absorbing member differs depending on the location, and the film thickness of the X-ray absorbing member varies within the X-ray exposure mask.
Line mask accuracy deteriorates. In order to prevent such etching of the X-ray absorbing member, a thin film and a conductive film having higher etching resistance than the substrate are formed between the silicon substrate and the insulating thin film. A silicon oxide film or the like is used as the thin film with high etching resistance. The conductor film is necessary for performing the above-mentioned selective vapor phase growth, and a polycrystalline silicon film or the like can be used.
本発明はこのような点に着目し、Ｘ線露光用マ
スクの製造方法において、基板上に該基板より耐
エツチング性の高い第１の被膜を形成したのち、
この被膜上に導体若しくは半導体からなる第２の
被膜を形成し、次いで第２の被膜上に絶縁物から
なる第３の被膜を形成し、次いで上記第３の被膜
を所望のマスクパターンに応じてパターニング
し、次いで気相成長法を用い上記第３の被膜には
成長層が形成されない条件下で前記第２の被膜の
露出した部分にＸ線吸収部材を選択的に形成し、
しかるのち前記基板の一部を前記第１の被膜が形
成された面の反対側から該被膜が露出するまで除
去するようにした方法である。 The present invention has focused on such points, and in a method for manufacturing an X-ray exposure mask, after forming a first coating having higher etching resistance than the substrate on a substrate,
A second film made of a conductor or semiconductor is formed on this film, then a third film made of an insulator is formed on the second film, and then the third film is applied in accordance with a desired mask pattern. patterning, and then selectively forming an X-ray absorbing member on the exposed portion of the second coating using a vapor phase growth method under conditions such that no growth layer is formed on the third coating;
Thereafter, a part of the substrate is removed from the side opposite to the surface on which the first coating is formed until the coating is exposed.
［発明の効果］
本発明によれば、反応性イオンエツチング法等
を用い絶縁性の第３の被膜を垂直にエツチングす
ることができ、このエツチング側面に沿つてＸ線
吸収部材を形成しているので、Ｘ線吸収部材の断
面形状を矩形状に形成することができる。また、
第１及び第２の被膜を除去する必要がないので、
工程の簡略化をはかり得る。さらに、基板エツチ
ングの際に第１の被膜がストツパ膜として作用す
るため、第２の被膜やＸ線吸収部材の膜厚が減少
する等の不都合はない。また、前記した従来法の
欠点(3)〜(4)も効果的に解決することができ、Ｘ線
露光用マスクの信頼性向上をはかり得る。[Effects of the Invention] According to the present invention, the insulating third film can be vertically etched using a reactive ion etching method or the like, and the X-ray absorbing member is formed along the etched side surface. Therefore, the cross-sectional shape of the X-ray absorbing member can be formed into a rectangular shape. Also,
Since there is no need to remove the first and second coatings,
The process can be simplified. Furthermore, since the first film acts as a stopper film during substrate etching, there is no problem such as reduction in the thickness of the second film or the X-ray absorbing member. Further, the disadvantages (3) to (4) of the conventional method described above can be effectively solved, and the reliability of the X-ray exposure mask can be improved.
［発明の実施例］
以下、本発明の詳細を図示の実施例によつて説
明する。第３図ａ〜ｅは本発明の一実施例に係わ
るＸ線露光用マスクの製造工程を示す模式図であ
る。まず、第３図ａに示す如く、シリコン基板２
１上に熱酸化技術を用いてシリコン酸化膜を２２
（耐エツチング性の高い第１の被膜）を0.3［μｍ］
の厚さに形成する。続いて、シリコン酸化膜２１
上に気相成長技術を用いて多結晶シリコン膜２３
（第２の被膜）を0.3［μｍ］の厚さに形成し、こ
の上に気相成長技術を用いてシリコン窒化膜２４
（絶縁性の第３の被膜）を0.5［μｍ］の厚さの形
成する、その後、シリコン窒化膜２４上にレジス
ト２５を回転塗布し、このレジスト２５を露光現
像してレジストパターンを形成する。次いで、第
３図ｂに示す如く反応性イオンエツチング技術を
用い、上記レジスト２５をマスクとしてシリコン
窒化膜２４をエツチングする。これにより、シリ
コン窒化膜２４のエツチング断面形状が矩形状と
なる。次いで、レジスト２５を除去したのち、第
３図ｃに示す如く気相成長技術を用い、500［℃］
で金属タングステン２６（Ｘ線吸収部材）を膜厚
0.3［μｍ］だけ選択成長させる。なお、この選択
成長は気相成長時の条件を適当に選ぶことにより
容易に行なえる。[Embodiments of the Invention] Details of the present invention will be explained below with reference to illustrated embodiments. FIGS. 3a to 3e are schematic diagrams showing the manufacturing process of an X-ray exposure mask according to an embodiment of the present invention. First, as shown in FIG. 3a, a silicon substrate 2
A silicon oxide film 22 is formed on 1 using thermal oxidation technology.
(first coating with high etching resistance) 0.3 [μm]
Form to a thickness of . Next, silicon oxide film 21
Polycrystalline silicon film 23 is deposited on top using vapor phase growth technology.
(second film) is formed to a thickness of 0.3 [μm], and on top of this a silicon nitride film 24 is formed using vapor phase growth technology.
(Insulating third film) is formed to a thickness of 0.5 [μm]. Thereafter, a resist 25 is spin-coated on the silicon nitride film 24, and this resist 25 is exposed and developed to form a resist pattern. Next, as shown in FIG. 3B, the silicon nitride film 24 is etched using the resist 25 as a mask using a reactive ion etching technique. As a result, the etched cross-sectional shape of the silicon nitride film 24 becomes rectangular. Next, after removing the resist 25, as shown in FIG.
The film thickness of metallic tungsten 26 (X-ray absorption material) is
Selectively grow by 0.3 [μm]. Note that this selective growth can be easily performed by appropriately selecting the conditions during vapor phase growth.
次いで、第３図ｄに示す如くシリコン窒化膜２
４及びタングステン２６上に膜厚１［μｍ］のポ
リイミド膜２７を形成する。しかるのち、KOH
溶液を用い第３図ｅに示す如くシリコン基板２１
の中央部を裏面からエツチングする。エツチング
はシリコン酸化膜２２で停止するのでタングステ
ン２６は全くエツチングされない。かくして形成
されたＸ線露光用マスクは、前記シリコン窒化膜
２４およびポリイミド膜２７がＸ線を透過し、前
記タングステン２６がＸ線を透過しないので、Ｘ
線露光に用いることが可能となる。 Next, as shown in FIG. 3d, a silicon nitride film 2 is formed.
A polyimide film 27 having a thickness of 1 [μm] is formed on the polyimide film 4 and the tungsten 26. Afterwards, KOH
As shown in FIG. 3e, a silicon substrate 21 is prepared using a solution.
Etch the center part from the back side. Since the etching stops at the silicon oxide film 22, the tungsten 26 is not etched at all. The X-ray exposure mask formed in this way does not transmit X-rays because the silicon nitride film 24 and the polyimide film 27 transmit X-rays, and the tungsten 26 does not transmit X-rays.
It becomes possible to use it for line exposure.
このように本実施例方法によれば、反応性イオ
ンエツチング技術等を用いてエツチングしたシリ
コン窒化膜２４の垂直な側面に沿つてタングステ
ン２６を成長させているので、タングステン２６
が断面を矩形状に形成することができ、マスクパ
ターンの断面を矩形状に形成できる。また、シリ
コン酸化膜２２がシリコン基板２１のエツチング
の際のストツパとして作用するため、タングステ
ン２６がエツチングされる等の不都合はない。さ
らに、第１及び第２の被膜２２，２３として透明
膜を用いているので、これらの被膜２２，２３を
除去する工程が不要となり、工程の簡略化をはか
り得る。 As described above, according to the method of this embodiment, the tungsten 26 is grown along the vertical side surfaces of the silicon nitride film 24 that has been etched using reactive ion etching technology.
can be formed to have a rectangular cross section, and the cross section of the mask pattern can be formed to be rectangular. Furthermore, since the silicon oxide film 22 acts as a stopper during etching of the silicon substrate 21, there is no problem such as etching of the tungsten 26. Furthermore, since transparent films are used as the first and second coatings 22 and 23, the process of removing these coatings 22 and 23 is not necessary, and the process can be simplified.
なお、本発明は上述した実施例に限定されるも
のではない。例えば、前記第３図ｃで示したＸ線
吸収部材の形成工程の後に、第４図ａに示す如く
シリコン窒化膜２４を除去し、その後同図ｂに示
す如くポリイミド膜２７を形成し、しかるのち同
図ｃに示す如くシリコン基板２１の裏面エツチン
グを行なうようにしてもよい。また、第３図ｃで
示した工程の後にシリコン基板２１の裏面エツチ
ングを施し第５図に示す構造を得るようにしても
よい。 Note that the present invention is not limited to the embodiments described above. For example, after the step of forming the X-ray absorbing member shown in FIG. 3c, the silicon nitride film 24 is removed as shown in FIG. 4a, and then the polyimide film 27 is formed as shown in FIG. Later, the back surface of the silicon substrate 21 may be etched as shown in FIG. Alternatively, the structure shown in FIG. 5 may be obtained by etching the back surface of the silicon substrate 21 after the step shown in FIG. 3c.
また、前記第１の被膜としては、シリコン酸化
膜に限らず、シリコン窒化膜、シリコン窒化・酸
化膜、窒化ホウ素膜或いはこれらの複合膜を用い
てもよい。また、第３の被膜は絶縁膜であればよ
く、第１の被膜と同一のものであつてもよい。さ
らに、前記Ｘ線吸収部材としてはタングステンの
他にモリブデンを用いるようにしてもよい。ま
た、前記第２の被膜は多結晶シリコン膜に限るも
のではなく、シリサイドを用いてもよく、要は半
導体若しくは導電体であればよい。その他、本発
明の要旨を逸脱しない範囲で、種々変形して実施
することができる。 Further, the first film is not limited to a silicon oxide film, but may be a silicon nitride film, a silicon nitride/oxide film, a boron nitride film, or a composite film thereof. Further, the third coating may be an insulating film, and may be the same as the first coating. Furthermore, molybdenum may be used instead of tungsten as the X-ray absorbing member. Furthermore, the second film is not limited to a polycrystalline silicon film, but may be made of silicide, and may be any semiconductor or conductor. In addition, various modifications can be made without departing from the gist of the present invention.
第１図はＸ線露光の原理を示す模式図、第２図
ａ〜ｆは従来のＸ線露光用マスクの製造工程を示
す断面模式図、第３図ａ〜ｅは本発明の一実施例
に係わるＸ線露光用マスク製造工程を示す断面模
式図、第４図ａ〜ｃおよび第５図はそれぞれ変形
例を示す断面模式図である。
２１……シリコン基板、２２……シリコン酸化
膜（第１の被膜）、２３……多結晶シリコン膜
（第２の被膜）、２４……シリコン窒化膜（第３の
被膜）、２５……レジスト、２６……タングステ
ン（Ｘ線吸収部材）、２７……ポリイミド膜（有
機物膜）。
Fig. 1 is a schematic diagram showing the principle of X-ray exposure, Fig. 2 a-f is a cross-sectional schematic diagram showing the manufacturing process of a conventional X-ray exposure mask, and Fig. 3 a-e is an embodiment of the present invention. FIGS. 4a to 4c and 5 are schematic cross-sectional views showing modifications of the X-ray exposure mask manufacturing process, respectively. 21... Silicon substrate, 22... Silicon oxide film (first film), 23... Polycrystalline silicon film (second film), 24... Silicon nitride film (third film), 25... Resist , 26...Tungsten (X-ray absorbing member), 27...Polyimide film (organic film).
Claims (1)
Ｘ線に対して透明な第１の被膜を形成する工程
と、上記第１の被膜上に導体若しくは半導体から
なるＸ線に対して透明な第２の被膜を形成する工
程と、上記第２の被膜上に絶縁膜からなる第３の
被膜を形成する工程と、上記第３の被膜を所望の
マスクパターンに応じてパターニングする工程
と、次いで気相成長法を用い上記第３の被膜には
成長層が形成されない条件下で前記第２の被膜の
露出した部分にＸ線吸収部材を選択的に形成する
工程と、しかるのち前記基板の一部を前記第１の
被膜が形成された面の反対側から該被膜が露出す
るまで除去する工程とを具備したことを特徴とす
るＸ線露光用マスクの製造方法。 ２ 前記Ｘ線吸収部材を形成する工程ののち、前
記第３の被膜およびＸ線吸収部材上に有機物膜を
形成するようにしたことを特徴とする特許請求の
範囲第１項記載のＸ線露光用マスクの製造方法。 ３ 前記Ｘ線吸収部材を形成する工程ののち、前
記第３の被膜を除去し、次いでＸ線吸収部材およ
び第２の被膜上に有機物膜を形成し、しかるのち
前記基板の除去工程を施すようにしたことを特徴
とする特許請求の範囲第１項記載のＸ線露光用マ
スクの製造方法。 ４ 前記基板として、シリコンを用いたことを特
徴とする特許請求の範囲第１項記載のＸ線露光用
マスクの製造方法。 ５ 前記第３の被膜としてシリコン酸化膜、シリ
コン窒化膜、シリコン酸化・窒化膜、窒化ホウ素
膜或いはこれらの複合膜を用い、前記Ｘ線吸収部
材としてタングステン或いはモリブデンを用いた
ことを特徴とする特許請求の範囲第１項記載のＸ
線露光用マスクの製造方法。 ６ 前記第２の被膜として、多結晶シリコン膜或
いはシリサイド膜を用いたことを特徴とする特許
請求の範囲第１項記載のＸ線露光用マスクの製造
方法。 ７ 前記第１の被膜として、シリコン酸化膜、シ
リコン窒化膜、シリコン酸化・窒化膜、窒化ホウ
素膜或いはこれらの複合膜を用いたことを特徴と
する特許請求の範囲第１項記載のＸ線露光用マス
クの製造方法。[Claims] 1. Higher etching resistance than the substrate on the substrate,
a step of forming a first coating transparent to X-rays; a step of forming a second coating made of a conductor or a semiconductor and transparent to X-rays on the first coating; a step of forming a third film made of an insulating film on the film; a step of patterning the third film according to a desired mask pattern; selectively forming an X-ray absorbing member on the exposed portion of the second coating under conditions where no layer is formed, and then forming a portion of the substrate opposite the surface on which the first coating is formed A method for manufacturing an X-ray exposure mask, comprising a step of removing the film from the side until the film is exposed. 2. The X-ray exposure according to claim 1, wherein after the step of forming the X-ray absorbing member, an organic film is formed on the third coating and the X-ray absorbing member. Method of manufacturing masks for use. 3 After the step of forming the X-ray absorbing member, removing the third coating, forming an organic film on the X-ray absorbing member and the second coating, and then performing the step of removing the substrate. A method of manufacturing an X-ray exposure mask according to claim 1, characterized in that: 4. The method of manufacturing an X-ray exposure mask according to claim 1, wherein silicon is used as the substrate. 5. A patent characterized in that a silicon oxide film, a silicon nitride film, a silicon oxide/nitride film, a boron nitride film, or a composite film thereof is used as the third film, and tungsten or molybdenum is used as the X-ray absorbing member. X described in claim 1
A method for manufacturing a mask for line exposure. 6. The method of manufacturing an X-ray exposure mask according to claim 1, wherein a polycrystalline silicon film or a silicide film is used as the second film. 7. X-ray exposure according to claim 1, characterized in that the first film is a silicon oxide film, a silicon nitride film, a silicon oxide/nitride film, a boron nitride film, or a composite film thereof. Method of manufacturing masks for use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58088114A JPS59213131A (en) | 1983-05-19 | 1983-05-19 | Manufacture of x-ray exposing mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58088114A JPS59213131A (en) | 1983-05-19 | 1983-05-19 | Manufacture of x-ray exposing mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59213131A JPS59213131A (en) | 1984-12-03 |
| JPH0469410B2 true JPH0469410B2 (en) | 1992-11-06 |
Family
ID=13933858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58088114A Granted JPS59213131A (en) | 1983-05-19 | 1983-05-19 | Manufacture of x-ray exposing mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59213131A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0715877B2 (en) * | 1985-07-19 | 1995-02-22 | 日本電信電話株式会社 | X-ray mask |
| JPS6446927A (en) * | 1987-08-18 | 1989-02-21 | Matsushita Electronics Corp | Manufacture of x-ray mask |
| US5051326A (en) * | 1989-05-26 | 1991-09-24 | At&T Bell Laboratories | X-Ray lithography mask and devices made therewith |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57185437A (en) * | 1981-05-11 | 1982-11-15 | Nec Corp | Production of x-ray exposure mask |
| JPS585744A (en) * | 1981-07-02 | 1983-01-13 | Dainippon Ink & Chem Inc | Method and device for classification of original as well as tone setup method of electronic color separator and device used for it |
| JPS5887821A (en) * | 1981-11-20 | 1983-05-25 | Toshiba Corp | Manufacture of mask for x-ray lithography |
| JPS5890729A (en) * | 1981-11-25 | 1983-05-30 | Nec Corp | Manufacture of x-ray mask |
-
1983
- 1983-05-19 JP JP58088114A patent/JPS59213131A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57185437A (en) * | 1981-05-11 | 1982-11-15 | Nec Corp | Production of x-ray exposure mask |
| JPS585744A (en) * | 1981-07-02 | 1983-01-13 | Dainippon Ink & Chem Inc | Method and device for classification of original as well as tone setup method of electronic color separator and device used for it |
| JPS5887821A (en) * | 1981-11-20 | 1983-05-25 | Toshiba Corp | Manufacture of mask for x-ray lithography |
| JPS5890729A (en) * | 1981-11-25 | 1983-05-30 | Nec Corp | Manufacture of x-ray mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59213131A (en) | 1984-12-03 |
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