JPS61245162A - X-ray mask - Google Patents
X-ray maskInfo
- Publication number
- JPS61245162A JPS61245162A JP60086807A JP8680785A JPS61245162A JP S61245162 A JPS61245162 A JP S61245162A JP 60086807 A JP60086807 A JP 60086807A JP 8680785 A JP8680785 A JP 8680785A JP S61245162 A JPS61245162 A JP S61245162A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ray
- boron
- carbon
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052796 boron Inorganic materials 0.000 claims abstract description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 19
- 229920001721 polyimide Polymers 0.000 abstract description 11
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 abstract description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006100 radiation absorber Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Abstract
Description
【発明の詳細な説明】
〔概要〕
ボロンまたはボロンと窒素をドープしたダイヤモンドも
しくはアモルファス炭素膜をＸ線マスクのマスク支持体
メンブレンとして用いる。DETAILED DESCRIPTION OF THE INVENTION [Summary] A diamond or amorphous carbon film doped with boron or boron and nitrogen is used as a mask support membrane of an X-ray mask.
本発明は応力の小なるＸ線メンブレンを製造する方法に
関するもので、さらに詳しく言えば、例えばＸ線マスク
の製造において、Ｘ線を吸収する吸収体を金（Ａｕ）
、タンタル（Ｔａ）、タングステン（Ｗ）の如き高融点
金属の薄膜で形成し、その金属パターンの支持体である
Ｘ線メンブレンの応力制御に関する。The present invention relates to a method of manufacturing an X-ray membrane with low stress, and more specifically, in manufacturing an X-ray mask, for example, the absorber that absorbs X-rays is made of gold (Au).
, tantalum (Ta), tungsten (W), etc., and relates to stress control of an X-ray membrane that is a support for the metal pattern.
例えばシリコンウェハ（以下ウェハという）の上に塗布
されたホトレジスト膜の露光に従来はガラスマスクを用
い、紫外線露光によってホトレジストの露光を行ってき
た。For example, a glass mask has conventionally been used to expose a photoresist film coated on a silicon wafer (hereinafter referred to as a wafer), and the photoresist has been exposed to ultraviolet light.
ところが、最近は集積回路を高集積化するために形成さ
れるべきベターン幅やパターン間隔が微細化される傾向
にあり、そのためには、波長の短い光が回折が起り難い
ので、電子ビーム（ＨＢ）やＸ線が用いられるようにな
ってきた。However, recently, in order to increase the integration density of integrated circuits, the pattern width and pattern spacing to be formed have become smaller. ) and X-rays have come into use.
Ｘ線露光を第２図の断面図を参照して説明すると、ウェ
ハ１１の上にホトレジスト膜１２が塗布されていて、Ｘ
線吸収体で作ったパターン１３が設けられたＸ線マスク
１４をウェハ１１の上方に配置し、Ｘ線を矢印に示す方
向に照射して露光をなす。To explain X-ray exposure with reference to the cross-sectional view of FIG. 2, a photoresist film 12 is coated on a wafer 11, and
An X-ray mask 14 provided with a pattern 13 made of a radiation absorber is placed above the wafer 11, and X-rays are irradiated in the direction shown by the arrow for exposure.
Ｘ線マスク１４は第３図の断面図に示され、それを作る
には、ウェハ１５（図に見て幅１００ｆｉのもの）の上
にポリイミドを塗布して第１のポリイミド膜１６を形成
し、全面にＴａを堆積（ｄｅｐｏｓｉ Ｌｉｏｎ） シ
、それをパターニングしてＴａパターン１７を形成し、
次いで全面にポリイミドを塗布して第２のポリイミド膜
１８を形成し、最後にシリコンを斜線で示す部分を残す
如くにエツチングしてマスクを完成する。The X-ray mask 14 is shown in cross-section in FIG. 3, and is made by coating a wafer 15 (100 fi wide in the figure) with polyimide to form a first polyimide film 16. , Deposit Ta on the entire surface (deposit lion), pattern it to form a Ta pattern 17,
Next, polyimide is applied to the entire surface to form a second polyimide film 18, and finally the silicon is etched leaving the shaded area to complete the mask.
第１のポリイミド膜はメンブレンと呼称され、それはＸ
線を通す材料、すなわち、ポリイミドの他に窒化はう素
（ＢＮ） 、窒化シリコン（ＳｉＮ）などで２μＩ１１
〜５μｍの膜厚に形成され、パターンはＸ線吸収体と呼
称され、Ｔａ＋ Ａｕ、 Ｗの如きＸ線を通さない重金
属で１．０μｍの厚さに堆積された ・膜をエツチング
して形成される。第２のポリイミド膜は保護膜として作
用する。The first polyimide film is called a membrane, and it is
The material for passing the wire, i.e. boron nitride (BN), silicon nitride (SiN), etc. in addition to polyimide, has a 2μI11
The pattern is called an X-ray absorber, and is formed by etching a film deposited to a thickness of 1.0 μm with heavy metals such as Ta+Au and W that do not transmit X-rays. Ru. The second polyimide film acts as a protective film.
Ｘ線吸収体ではＴａが比較的応力が小さいので多用され
ているものであり、それの薄膜はスパッタリング法で堆
積される。スパッタリングは１０−２〜１０−’ Ｔｏ
ｒｒの真空度のアルゴン（Ａｒ）雰囲気のチャンバ内で
なされ、Ｔａのマグネトロンスパッター法（通常のＤＣ
，あるいはＲｆスパッター法も含む）によりポリイミド
層の上にＴａを堆積させる。Ta is often used in X-ray absorbers because it has relatively low stress, and its thin film is deposited by sputtering. Sputtering is 10-2 to 10-' To
The Ta magnetron sputtering method (ordinary DC
, or Rf sputtering method) is used to deposit Ta on the polyimide layer.
Ｘ線マスクに炭素膜を用いる技術については広く研究が
なされていて、特開昭５７−１２８０３１号公報には、
「ダイヤモンド状炭素膜を基板材料として」用い、また
［窒化シリコン、酸化シリコン、硼素添加シリコン、窒
化硼素の内鍔れか１種の薄膜にダイヤモンド状炭素膜を
積層した複合膜を基板材料として」用いる露光用マスク
が、特開昭５８−４５３４号公報には、［ダイヤモンド
またはダイヤモンドと無定形炭素の混合物からなる薄膜
をＸ線透過体として有する」Ｘ線リソグラフィー用マス
クが、さらに特開昭５９−９９２１号公報には、「水素
添加アモルファス炭素から成る」Ｘ線マスク用フィルム
とそれの製造方法が開示されている。The technology of using carbon films in X-ray masks has been extensively researched, and Japanese Patent Application Laid-open No. 128031/1983 describes
``A diamond-like carbon film is used as a substrate material,'' and [a composite film in which a diamond-like carbon film is laminated on a thin film of one of silicon nitride, silicon oxide, boron-doped silicon, or boron nitride is used as a substrate material.'' The exposure mask to be used is disclosed in JP-A No. 58-4534, and an X-ray lithography mask [having a thin film made of diamond or a mixture of diamond and amorphous carbon as an X-ray transmitter] is further described in JP-A-58-4534. Japanese Patent No. 9921 discloses an X-ray mask film "made of hydrogenated amorphous carbon" and a method for producing the same.
第４図に炭素膜２２をウェハ１１上に成膜した場合の構
造が模式的に示されるが、炭素１１ｉ！２２は圧縮応力
をもっているために、図示の如く上方に凸に反り、それ
に追随してウェハ１１も同様に反っている。FIG. 4 schematically shows the structure when the carbon film 22 is formed on the wafer 11. Carbon 11i! Since the wafer 22 has compressive stress, it curves upward in a convex manner as shown in the figure, and the wafer 11 also curves accordingly.
このウェハの中心部分をエツチングで除去して図示の如
く周辺部分１１ａのみを残すと、それまで炭素膜２２を
支えていたウェハ部分がなくなったため炭素膜はのびて
しまい、その表面に波うったようなしわが発生すること
が確認された。When the central part of the wafer is removed by etching and only the peripheral part 11a is left as shown in the figure, the wafer part that had previously supported the carbon film 22 is no longer present, and the carbon film stretches out, creating a wave-like appearance on its surface. It was confirmed that wrinkles were generated.
本発明はこのような点に鑑みて創作されたもので、成膜
後において引張り応力を有する炭素膜を作る方法を提供
することを目的とする。The present invention was created in view of these points, and an object of the present invention is to provide a method for producing a carbon film having tensile stress after film formation.
第１図は本発明実施例の断面図である。 FIG. 1 is a sectional view of an embodiment of the present invention.
第１図において、Ｘ線マスクのマスク支持体となる膜２
２を、 ＢｘＣｌ−ｘ （６０＜ ｘ ＜ ８０％）
またはＢｘＮｙＣｌ−ｘ−ｙ （６０＜ ｘ ＜ ８
０％、２０＜ｙ＜４０％）で成膜した。In FIG. 1, a membrane 2 serving as a mask support of an X-ray mask is shown.
2, BxCl-x (60<x<80%)
or BxNyCl-x-y (60<x<8
0%, 20<y<40%).
上記のマスク支持体となるメンブレンにおいては、共有
結合時の原子半径の大小を利用してメンブレンに張りを
もたせるものである。In the membrane serving as the mask support described above, tension is imparted to the membrane by utilizing the size of the atomic radius at the time of covalent bonding.
第１図は本発明にかかるＸ線マスクの断面図であり、こ
のＸ線マスクにおいてマスク支持体となる膜２２（Ｘ線
メンブレンとも呼称される）が下記の如くにして作られ
たものである。FIG. 1 is a cross-sectional view of an X-ray mask according to the present invention, in which a membrane 22 (also referred to as an X-ray membrane) serving as a mask support is made as follows. .
ボロン（Ｂ）および炭素（Ｃ）はそれぞれ単体では圧縮
応力をもつこと、およびボロンナイトライド（ＢＮ、窒
化ボロン）においては、Ｂが多い（ｒｉｃｈ）ときは引
張応力を、Ｂが少ない（ｌｏｗ）ときは圧縮応力をもつ
ことが知られている。Boron (B) and carbon (C) each have compressive stress when used alone, and boron nitride (BN, boron nitride) has tensile stress when B is rich (rich) and when B is low (low). It is known that there is compressive stress.
一つの例を挙げると、シリコン基板にボロンをイオン注
入法で注入し次いでアニールすると、ボロンが拡散され
た領域は引張応力をもつ。その理由は、シリコン基板内
のシリコン原子配列において、そのどれか１つが共有結
合時に原子半径の小なるもので代えられると、その原子
と隣りのシリコン原子との間の距離が大になり拡散領域
は引張応力をもち、他方シリコン原子の１つが原子半径
の大なる原子と代えられると、当該原子と隣りのシリコ
ン原子との間の距離が小になり拡散領域は圧縮応力をも
つに至るからであると解される。For example, when boron is implanted into a silicon substrate by ion implantation and then annealed, the region where boron is diffused has tensile stress. The reason for this is that in the arrangement of silicon atoms in a silicon substrate, if any one of them is replaced by one with a smaller atomic radius during a covalent bond, the distance between that atom and the neighboring silicon atom increases, resulting in a diffusion region. has a tensile stress; on the other hand, if one of the silicon atoms is replaced by an atom with a larger atomic radius, the distance between that atom and the neighboring silicon atom becomes smaller, and the diffusion region has a compressive stress. It is understood that there is.
それと全く同じ理由で、ＢＨにおいてＢが多いときは引
張応力、Ｂが少ないときは圧縮応力をもつのであり、本
発明においてはこの原理を利用するものである。For exactly the same reason, when there is a large amount of B in BH, there is a tensile stress, and when there is a small amount of B, there is a compressive stress, and this principle is utilized in the present invention.
すなわち、炭素に共有結合半径の異なる材料を入れるこ
とによって炭素膜の応力を制御するものであって、Ｂｘ
Ｃｌ−ｘまたはＢｘＮｙＣｔ−ｘ−ｙの）Ｃ＋３’の値
を変えることによって応力を制御するものである。That is, the stress in the carbon film is controlled by adding materials with different covalent bond radii to carbon, and Bx
The stress is controlled by changing the value of C+3' of Cl-x or BxNyCt-x-y.
上記した炭素膜はスパッタ法または化学気相成長（ＣＶ
Ｄ）法で作成可能である。スパッタ法によるときは、タ
ーゲットにＢ、ＣまたはＣとＢの複合材を用い、ガスは
Ａｒ／ＣＨｇ混合ガスまたはＡｒ／Ｃｈ ／ Ｎ２混合
ガスとし、通常のスパック技術でメンフ゛レンを成舅臭
する。The carbon film described above can be formed by sputtering or chemical vapor deposition (CV).
D) can be created by law. When using the sputtering method, B, C or a composite material of C and B is used as the target, Ar/CHg mixed gas or Ar/Ch 2 /N2 mixed gas is used as the gas, and membrane is formed using the usual sputtering technique.
ＣＶＤ法によるときは、ＢＪｓ ／ＣＨ，４＋ Ｂｚ
ｋ ／Ｃ，Ｈ婦、 ＢＬ）Ｉ、／ Ｃ２）＋６およびＮ
２またはＮＨ３ガスを使用し、通常の技術でメンブレン
を成膜することができる。When using the CVD method, BJs /CH, 4+ Bz
k /C, H, BL)I, /C2)+6 and N
The membrane can be deposited using conventional techniques using 2 or NH3 gas.
本発明者の実験によると、上記のＢｘＣｌ−ｘ＋ＢｘＮ
ｙＣｘ−ｘ−ｙにおいて、それぞれ６０＜ Ｘ ＜ ８
０％。According to the inventor's experiments, the above BxCl-x+BxN
In yCx-x-y, respectively 60<X<8
0%.
６０＜ ｘ ＜ ８０％、２０＜ｙ＜４０％に設定した
。It was set to 60<x<80% and 20<y<40%.
Ｘ線マスクの製造においては、第２図を参照して説明し
た従来技術において、シリコンウェハ１１をガラスリン
グｌＯの上に付け、ＢＮＮｉ２Ｏ成膜に代えて、ＢｘＣ
ｌ−ｘまたはＢｘＮｙＣｘ−ｘ−ｙの膜（Ｘ線メンブレ
ン）２２を上記のスパッター法またはＣＶＤ法で成膜し
、以後従来技術の場合と同じ工程で、Ｔａ（またはＷも
しく番よ八Ｕ）パターン１７、ポリイミド膜１８を形成
することによって第１図に示すマ女りを完成した。In manufacturing an X-ray mask, in the conventional technique explained with reference to FIG.
A film (X-ray membrane) 22 of l-x or BxNyCx-x-y is formed by the above-mentioned sputtering method or CVD method, and then Ta (or W or ) By forming a pattern 17 and a polyimide film 18, the matrix shown in FIG. 1 was completed.
以上述べてきたように、本発明によれば、ボロンまたは
ボロンと窒素をドープしたダイヤモンド状またはアモル
ファス炭素膜をＸ線メンブレンとして使用することによ
り、単独で使用することのできなかったダイヤモンド状
またはアモルファス状の炭素をＸ線メンブレンとして利
用することが可能になり、Ｘ線露光用の平坦な膜を得る
に有効である。As described above, according to the present invention, by using a diamond-like or amorphous carbon film doped with boron or boron and nitrogen as an X-ray membrane, a diamond-like or amorphous carbon film that cannot be used alone can be used. This makes it possible to use shaped carbon as an X-ray membrane, and is effective in obtaining a flat film for X-ray exposure.
第１図は本発明実施例の断面図、
第２図はＸ線露光を説明する断面図、
第３図は従来例の断面図、
第４図は炭素膜の反りを説明する断面図である。
第１図と第２図において、
１０はガラスリング、
１１はシリコンウェハ、
１１ａはシリコンウェハの周辺部分、
１２はレジスト、
１３は吸収体パターン、
１４はＸ線マスク、
１７はＡｕ層（またはＷ、７ａ層）、
１８は第２のポリイミド膜、
２２はＢｘＣ：ｔ−ｘまたはＢｘＮｙＣｔ−Ｘ−ｙで作
ったマスク支持体となる膜である。
縞明電光例＃ｒ（ｉ７１１Ｄ
第１図
ｊ！ｊｌｊｊ
Ｘ＃ａｔｓｉｌ明ｌ５ｌｒ面図
第２図
ＸｔＩＬｚｘ７前ｄｏｔ３
膚東成の反、すを電先９月すＳ逮ケ面唄第４図Fig. 1 is a sectional view of an embodiment of the present invention, Fig. 2 is a sectional view illustrating X-ray exposure, Fig. 3 is a sectional view of a conventional example, and Fig. 4 is a sectional view illustrating warping of a carbon film. . 1 and 2, 10 is a glass ring, 11 is a silicon wafer, 11a is a peripheral part of the silicon wafer, 12 is a resist, 13 is an absorber pattern, 14 is an X-ray mask, 17 is an Au layer (or W , 7a layer), 18 is a second polyimide film, and 22 is a film made of BxC:t-x or BxNyCt-Xy to serve as a mask support. Striped lightning example #r (i711D Figure 1j!jljj
Claims (3)
支持体となる膜（２２）が設けられ、該膜上にＸ線吸収
パターンおよび保護膜が形成されてなるＸ線露光のため
のマスクにして、該膜（２２）はボロンと炭素を含むこ
とを特徴とするＸ線マスク。(1) A mask for X-ray exposure in which a film (22) serving as a mask support is provided on a silicon wafer from which the central portion has been removed, and an X-ray absorption pattern and a protective film are formed on the film. An X-ray mask characterized in that the film (22) contains boron and carbon.
＜ｘ＜０．８）であることを特徴とする特許請求の範囲
第１項記載のＸ線マスク。(2) The film (22) is B_xC_1_-_x(0.6
The X-ray mask according to claim 1, characterized in that <x<0.8).
−＿ｙ（０．６＜ｘ＜０．８、０．２＜ｙ＜０．４）で
あることを特徴とする特許請求の範囲第１項記載のＸ線
マスク。(3) The film (22) is B_xN_yC_1_-_x_
-_y (0.6<x<0.8, 0.2<y<0.4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60086807A JPS61245162A (en) | 1985-04-23 | 1985-04-23 | X-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60086807A JPS61245162A (en) | 1985-04-23 | 1985-04-23 | X-ray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61245162A true JPS61245162A (en) | 1986-10-31 |
Family
ID=13897075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60086807A Pending JPS61245162A (en) | 1985-04-23 | 1985-04-23 | X-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61245162A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125930A (en) * | 1987-11-11 | 1989-05-18 | Fujitsu Ltd | X-ray mask |
-
1985
- 1985-04-23 JP JP60086807A patent/JPS61245162A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125930A (en) * | 1987-11-11 | 1989-05-18 | Fujitsu Ltd | X-ray mask |
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