JPS5890729A - Manufacture of x-ray mask - Google Patents
Manufacture of x-ray maskInfo
- Publication number
- JPS5890729A JPS5890729A JP56188803A JP18880381A JPS5890729A JP S5890729 A JPS5890729 A JP S5890729A JP 56188803 A JP56188803 A JP 56188803A JP 18880381 A JP18880381 A JP 18880381A JP S5890729 A JPS5890729 A JP S5890729A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- film
- resist
- mask
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 28
- 235000014121 butter Nutrition 0.000 claims description 15
- 239000006096 absorbing agent Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 19
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 238000010894 electron beam technology Methods 0.000 abstract description 6
- 238000001704 evaporation Methods 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract description 2
- 239000004952 Polyamide Substances 0.000 abstract 3
- 229920002647 polyamide Polymers 0.000 abstract 3
- 238000000609 electron-beam lithography Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 13
- 229920001721 polyimide Polymers 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 101000958041 Homo sapiens Musculin Proteins 0.000 description 1
- 235000008708 Morus alba Nutrition 0.000 description 1
- 240000000249 Morus alba Species 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 102000046949 human MSC Human genes 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Abstract
Description
【発明の詳細な説明】
本＠鋼は１μｍ以下の値線パターンの転写に威力を発揮
するＸ１ｉｌｉｌリングラフイの分野におけるＸ線マス
クの作製方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing an X-ray mask in the field of Xilil ring graphing, which is effective in transferring line patterns of 1 μm or less.
Ｘ線リングラフィの実用化に奢いて、実用的で十分なマ
スクコントラストを持ったＸ線マスク作＃ｖＬｌｉＩ′
ｔ−確立することが重要なｌ１題の一つであることは論
をまたない。４〜１３Ａの１１Ｌ長の軟Ｘ線が通常よく
用いられるが、この波長領域で十分なマスクコントラス
トを侮るためには、はとんど例外なく用いられるＡｕの
吸収体バター／の場合、〜８０００Ａ以上のＡｕ１Ｚ）
ＩＩＩ厚が必要である。しかもＸ線リングラフィの特長
を生かすために、吸収体パターンの線巾としてはサブ４
クーンが要求される。このような線巾がサブ４クーンで
厚膜の人Ｕｖ）吸収体バター／を形成する技４１ｔ−確
立することは、一つの重要な課題である。この方面の代
機的従来挾術忙説明する。第１図はＡ、吸収体パターン
形成プロセスを示す０例えば１９８０年に発行された刊
行物ジャパニーズ・ジャーナル嗜オグ・アプライド・フ
ィツクス（Ｊｐ、、 ’ ＊ムｐｐｌ Ｐｈｙｓ、）、
図が４１！りている。 （１）（ｌｏｏ）面方位の８１
ワエク戸−１上に、減圧ＣＶＤ法によってａｉＮ 履２
を形成する。メッキベースとなるＡｕＩＩ（１００Ａ厚
）３、厚膜のポリイミド１ｌｌ（１２μｍ厚）４．電子
ビームレジストを頑？Ｘ形成する。電子線織元によって
、必要なレジストパターン５が得られる。（２）ポリイ
ミドｌＩをエツチングするための中間マスクを形成ｒる
ために、Ｔｉ６ｔ−蒸着する。リフトオフプロセスによ
って、レジス）を除去し、Ｉｌｌ 、マスクを形成する
。（３）几Ｆｆｉ、応性スバ、タエ、チングによって、
′ｒＩ をマスクとして、ポリイミドパターン７を形成
丁Ｆ、 １４）ＡｕのＸ線後収体パターン８ｔ−１Ｉｔ
気メ、＋法によって形成する＠ （５）ポリイミドパタ
ーンと、鑵去し、披収坏パターンの無いところのメッキ
ベースであるＡ、 Ｉｌ！をＲ１スバ、タエッチングで
鑵去し、ｊ＆僕にＳ ｉ ｖ７−ｃ／％−の反対ｍｔＫ
ＯＨ（ｇ Ｍ ｖＣ工ってエツチングして、Ｘ線マスク
が光成する。本方床の特徴、工、厚膜のポリイミドパタ
ーンτ７８４し、それを利用して厚膜のＡｕの吸収体パ
ターンを形成する点にある。For the practical application of X-ray phosphorography, a practical X-ray mask with sufficient mask contrast #vLliI'
There is no doubt that establishing t- is one of the important issues. Soft X-rays with a length of 4 to 13 A and 11 L are usually used, but in order to provide sufficient mask contrast in this wavelength range, in the case of the Au absorber butter/, which is used almost without exception, ~8000 A Au1Z)
III thickness is required. Moreover, in order to take advantage of the features of X-ray phosphorography, the line width of the absorber pattern is sub-4.
Kuhn is requested. Establishing a technique for forming a thick film with a line width of sub-4 cm is an important issue. I will explain the traditional techniques used in this area. Figure 1 shows the process of forming an absorbent pattern.For example, a publication published in 1980, Japanese Journal of Applied Fixtures (Jp,,'*ppl Phys,),
The figure is 41! There is (1) (loo) plane orientation 81
On the work door-1, aiN layer 2 was applied by low pressure CVD method.
form. AuII (100A thick) as a plating base 3, thick polyimide 1ll (12 μm thick) 4. Stubborn electron beam resist? Form an X. The required resist pattern 5 can be obtained by electron beam weaving. (2) Ti6t-evaporation to form an intermediate mask for etching polyimide II. The resist (resist) is removed by a lift-off process, and a mask is formed. (3) By 几Ffi, Okei Suba, Tae, and Ching,
Using 'rI as a mask, polyimide pattern 7 is formed. 14) Au post-X-ray collection pattern 8t-1It
(5) Polyimide pattern and plating base where there is no plating pattern. A, Il! R1 suba, remove it with ta-etching, and give j & me the opposite mtK of S i v7-c/%-
After etching with OH (g M vC process), an X-ray mask is formed by photo-etching. It is at the point of formation.
しかし・了かり、このような従来技術は次のような欠点
を有している。それは前ｇ＋２）の工程のＴｉのリフト
オフによって中間マスクを形成している点にある。Ｍ２
図ｔもつで詳しくｒ６Ｌｌｉする。す７トオフプｐセス
の成否の鍵は、レジストバター／の形状にあり、それが
逆台形の形状２１でなげればならないとい５ことは一般
によく知られた事実である。垂直壁あるいゼよ台形の形
状の４合は、６要な金Ｊ１４貞パターン２２と阪レジス
トパターンとが壁面でｊすることになり、リフトオフに
よる■レジストパターンの４去がうま（いρ）ない事が
多い。従っで、逆台形の形状を優るということが必須の
条件となる。１子＃ＩＡＩＩＬ光によって逆台形レジス
トパターンを得ようとすることりよ、１４元条件及び４
律条件等に２いて普遍極めて雇用範囲が狭く、１！Ｌ４
的に困蟻度が＾いとｄわざるｔ得ない。これが第ｌの欠
点である。さらに第２図をよく櫨でいると容易に気が付
くことであるが、２１のよ５１ｉ逆台形の形状でめ°る
と、本質的には黴−パターン（特にサグミクｐツバター
ン）Ｏ形成には不同きである。すｒ（わら、逆台形の傭
ばか、リフトオフを十分１’Ｊｌｆｌとするために、あ
る必要な傾斜を持たねばならず、このことは逆台形バタ
ー／の微細化量ζＩＬＬＩｌ ＋ｉτ与んゐ。従つＣ、
サブミクｐンノ（ターンを再現ＮＬ↓く潜るには、す７
オフプロセスは不向さでθろ５と志わルる。ところで、
ｘ４Ｍリングラフィの成犬Ｊ）特長、工、サプミクｐン
／（ターンの転写が命ので容易Ｖこ出来るということで
ある。従りＣ１本メ的サすミクｐンパターンの形成に不
向き１ｉリフトオフブーセスは問題であるとｄわざるｔ
優ない。こＩしが第２の欠点である。However, such conventional technology has the following drawbacks. The reason is that the intermediate mask is formed by lift-off of Ti in the previous step (g+2). M2
See Figure t for details. It is a well-known fact that the key to the success or failure of a to-off process lies in the shape of the resist butter, and that it must be cast in an inverted trapezoidal shape 5. In the case of a vertical wall or trapezoidal shape, the 6-necessary Gold J14 Sada pattern 22 and the Saka resist pattern meet on the wall surface, and the removal of the 4 resist pattern by lift-off is good (Iρ). There are many cases where there is no. Therefore, it is an essential condition that the shape be superior to that of an inverted trapezoid. 1st child #Kotori trying to obtain an inverted trapezoidal resist pattern by IAIIL light, 14 element conditions and 4
2 in terms of legal conditions, etc., but the scope of employment is extremely narrow, and 1! L4
I can't help but feel extremely embarrassed. This is the first drawback. Furthermore, if you look at Figure 2 closely, you will easily notice that when you look at the inverted trapezoidal shape of 51i as shown in 21, the mold pattern (especially the sagumiku P tube pattern) is essentially different in the O formation. It is possible. In order to make the lift-off sufficiently 1'Jlfl, the inverted trapezoidal butter must have a certain necessary slope, which gives the amount of refinement ζILLIl +iτ of the inverted trapezoidal butter/. C,
Submiku punno (Reproduce the turn NL ↓ To dive deep, Su7
Off-process is unsuitable and I would like to use θro5. by the way,
x4M Lingraphy's Adult J) Features, Techniques, Supmic Pun/(Turn transfer is essential, so V can be easily done. Therefore, 1i lift-off is unsuitable for forming a Miku Pun pattern using a single C line. I don't think Busses are a problem.
Not good. This is the second drawback.
本発明の１的よ、こ・〕よ５；、ｌＥ米の入点を艙云Ｃ
しめて一子一一尤に＝るａ′ｊｔ、栄件反び現９１条件
号ｔよりｖｋｌ（転）し、本質的に微鱗ノくターン形成
に通したｔｒ規ｔｘ−マスク作薬方伝を提供することに
ｊ） ＠ 。This is the first point of this invention.
The tr regulation tx-mask drug formula, which has been changed from the 91st condition number t, is essentially a microscopic turn formation. j) @.
本９６四によＡ、よ、レジス、トに描画された／くター
ンτ曽属濃バター７へと及保し、該金Ｉ１４膜／（ター
／ｌマスクとして４い付機膜パターンτ形成し、ば訂慎
膜パターンを利用してメッキ法によってＸ−吸収体パタ
ーンを形成し、該有愼幌Ｉ（ター／を除去してＸ線マス
ク用の吸収体パターンを優る。According to Book 964, the /k pattern drawn on the resist is applied to the thick butter 7, and the gold I14 film /(tar/l mask) is formed with a 4-marking machine film pattern τ. Then, an X-absorber pattern is formed by a plating method using the thin film pattern, and the absorbent pattern is removed to improve the absorber pattern for an X-ray mask.
Ｘ線マスク作製方法に２いＣ，レジストに描画されたパ
ターンを金属膜パターンへと変換する＠ＶＣ、パターン
ニ／グ１れ化レジストバターｙ金マスクとしＣ、ドライ
エ、チング法によりて、厚い有損膜上全面にあら力）し
め形成されていた金Ｊ！膜を工、チングして、前記金属
膜パ匁−ンを優ることを特徴とｒるＸ線マスク作製方法
が得られる。2C for the X-ray mask manufacturing method, @VC to convert the pattern drawn on the resist into a metal film pattern, pattern N/G 1 resist butter y gold mask C, dry etching method to thicken it. Gold J was formed on the whole surface of the damaged film! A method for producing an X-ray mask characterized in that the film is processed and etched to have a pattern superior to that of the metal film described above is obtained.
以下本発明について実施例を示す図面を参照して説明す
る。第３−μ、−実施４ｓを示すＸ線マスクのＡＨ吸収
体バター７形成ブーセス図である。The present invention will be described below with reference to drawings showing embodiments. FIG. 3 is a diagram showing the formation of the AH absorber butter 7 in the X-ray mask showing the 3rd μ, - implementation 4s.
（１）、ｉｉクエノ・−１上に、プラズマＣＶＩ）法に
ぶって膜上にスバ、り蒸着する。ｌ！厚１．２μｍ根度
のポリイミド膜４ｔ−スピン億布し、２５０℃以上の高
温ベーキング処理をする。この工程までは前述した従来
技術と大き（は変らない。厚膜ポリイミド膜全ｍ上ＫＡ
１３６ｔＪＩＫ１０００〜２０００Ａ Ｘ空ＫＭする。(1), ii. The film is deposited on the Cueno-1 using a plasma CVI method. l! A polyimide film having a thickness of 1.2 .mu.m is spun on a 4T-spun cloth and subjected to a high-temperature baking treatment at 250.degree. C. or higher. Up to this step, there is no difference from the conventional technology described above.
136tJIK1000~2000A X empty KM.
λｌｌ上上電子線４元用レジスト、例えはＰＭＭＡをス
ピンＩ！！布し、電子線露光によって必要なレジストパ
ターン５ｔ４る。（２）レジストバターｙ５ｆマスクと
して、反応性スバツタエ、チング（例えｒｉ′ｑｃ＋４
ガスを用いる）によりてＡ１３６を明ＶこよるＪｌｒｍ
のブーセスである。（３）〜（５）ｄ従来技碩と大きく
は変らないのでＷ＆明を省略する。゛新規のプロセスに
ついて峠しく説明する。反応性スバ、タエ、チ／グ等の
ドライエ、チング法によって嶌
有機膜１全−に形成された金属膜をエツチングして、必
要な金属の中間マスクを帰ることが本発明の？＃値であ
る。８ｔＩ記Ａｌｌ［３６″を反応性スバ、タエッチノ
グする摩の必ｌ！なンジストバター７５についてである
が、こ）ｔｌより７トオフ法では必須である避台ノｅパ
ター７を特に必要としない。反応性スバツタエ、チング
１よ、本質的にはレジストパターンマスクｋｆした基板
面に対してほぼ！！！直に入射する反応はイオンによる
エーチングであるから、垂瀘方ＩＱＩ ７）ＴｈりみＣ
レジストパターンで櫨われていない所であれば、そこの
被工、チンダ＊ｔエツチングする。従うて、レジストバ
ター／形状が特に逆台形である必要はなく、適当な形状
のレジストパターンであればよい。すなわち、側面かは
ぼ垂直の形状をしたレジストパターン、あるいは、金属
膜とレジストのエツチング比が十分大きい場合は、側面
がやや外＠に傾斜（台形状）したようなレジストパター
ン（または垂直側面の上部の角がとれてやや円形に近い
ようなレジストパターン）等で十分である。一般にレジ
ストのパターンがほぼ垂直＠間となる工うＫ１１１元条
件、現像条件等を最適化すること、あるいは通常台形状
のパターンが出来やすいことが普通であり、またこのた
めの緒条−件は、逆台形レジストパターンを得るための
諸条件と比べて、はるかにゆるやかである。電子線露光
０Ｊ１１１合も事情は同様であるが、電子４！１露元に
よりてリフトオフ法の九めＯ逆台形し之ストパターンを
得るためのｇ条件は、光学罵光等の他の方法と比べてむ
しろさらに困錐であると言う方が適切である。前述した
ように、反応性スバ、タエッチング法の場オ、逆台形レ
ジストバター７を必要としない。従って新規ブーセスで
は、−子線露光ＶこよりＣレジストパターンを形成する
峰の露光条件及び＃Ｌ潅末件等をより緩和することがで
きる。Spin a resist for electron beam quaternary, for example PMMA, on λll! ! Then, a necessary resist pattern 5t4 is formed by exposure to an electron beam. (2) As a resist butter y5f mask, use reactive sbattuae, ching (for example, ri′qc+4
Jlrm
This is Bouses. (3) to (5) d Since there is no major difference from the conventional technique, W&B will be omitted.゛Explain the new process in detail. According to the present invention, the metal film formed on the entire organic film 1 is etched by a dry etching method such as reactive etching, etching, etching, etching, etc., and the necessary metal intermediate mask is returned. # is the value. Regarding the undistorted butter 75, which is a must when using the reactive spacing and etch-nog of all [36'' in 8tI], there is no particular need for the putter 7, which is essential in the 7-toff method.Reaction 7)Thrimi C
If the area is not marked by the resist pattern, the workpiece there is etched. Therefore, it is not necessary that the resist butter/shape is an inverted trapezoid, but any resist pattern with an appropriate shape may be used. In other words, a resist pattern whose sides are almost vertical, or, if the etching ratio between the metal film and the resist is sufficiently large, a resist pattern whose sides are slightly inclined outward (trapezoidal) (or a resist pattern whose sides are vertical). A resist pattern with rounded upper corners and a somewhat circular shape is sufficient. In general, it is common to optimize the K111 original conditions, development conditions, etc., so that the resist pattern is almost vertical, or to easily create a trapezoidal pattern, and the initial conditions for this are , the conditions are much more relaxed than those for obtaining an inverted trapezoidal resist pattern. The situation is the same for electron beam exposure 0J111, but the g conditions for obtaining the 9th O inverted trapezoidal pattern of the lift-off method using the electron 4!1 exposure source are different from those of other methods such as optical exposure. It would be more appropriate to say that it is even more difficult than that. As mentioned above, the inverted trapezoidal resist butter 7 is not required in the case of the reactive etching method. Therefore, in the new Busses, the exposure conditions for the peaks forming the C resist pattern, the #L conditions, etc. can be more relaxed than the negative beam exposure V.
また、・又応性スバツタエ、チングの大きな特長は、本
′Ｊｆ１／、Ｉにサブミクａｙｓ巾の微細パターンの形
成に１していることである。従来、数ミクロン以上の、
１１１１１］？Ｌ−持つ坐導体・桑積回路の製造プロセ
スにはケミカル−、チ／グが行われていたが、ケミカル
エツチングの場合はアンダー力、ト等の重大な閲遊点が
あり１本質的に微細パターンの形成には不同きである。In addition, a major feature of the reactive coating is that it is suitable for forming fine patterns with a submicron width. Conventionally, the diameter of several microns or more,
11111]? Chemical etching was used in the manufacturing process of L-conductors and mulberry laminated circuits, but in the case of chemical etching, there are important crossing points such as under force and There is no difference in pattern formation.
反応性スバ、タエ、チ／グにおいて、１．ｆｉ基板面ズ
ブしてほぼ垂直に人−する反応性イオンの効果が大であ
り、腋工、チ／グ傅のエツチング形状を刷と容易に基板
面に対してほば垂直にすることができる。ρ）つ容易ｖ
ｃ７ンダーカツトの雇いバター／ｌ−４るエツチング条
件を見出すことかでさる。ｖｔりで、反応性スバ、タエ
、チングは不ｔｔｎｔこサグ４りｐンパターンの形成に
適している０則述のように本発明の新規プロセスは、反
応性スバツタエ、チングによって必要な金属の中間マス
クを得る工程を含んでおり、腋エツチング技術の特長を
十分に生かすことができる。すなわち本質的に微細パタ
ーン形成に遍したＸ線マスク作裂プロセスを得ることが
でき、発明の目的を達成できる。In reactive Suba, Tae, Chi/G, 1. The effect of reactive ions that are perpendicular to the surface of the fi substrate is great, and the etching shape of the axillary and chip can be easily made almost perpendicular to the surface of the substrate. . ρ) easy v
It is a matter of finding the etching conditions for c7 undercuts using butter/l-4. As stated above, the new process of the present invention is suitable for the formation of a non-tttnt sag pattern. This method includes the step of obtaining an intermediate mask, and the features of armpit etching technology can be fully utilized. That is, it is possible to obtain an X-ray mask tearing process that essentially covers fine pattern formation, and the object of the invention can be achieved.
以上本発明を反応性スバ、タエ、チングを言むプロセス
′を例に説明してきたが、本発明はスバ。Although the present invention has been explained above by taking as an example the process of reactive filtration, drying, and oxidation, the present invention is not limited to reactive filtration.
タエ、チング、反応性イオンビームエツチング、イオ／
ビームエ、チング等のいわゆる異方性エツチングの可能
なドライエ、チングを含むプロセスに過用しても前述し
たと同様超微細パターン化をもたらしうるものである。etching, reactive ion beam etching, io/
Even if it is overused in a process including beam etching, etching, etc., which is capable of so-called anisotropic etching, ultra-fine patterning can be produced as described above.
また中間金属涙としてはＡＩ を例にとって説明してき
たが、Ｔｉ、＋Ｓｉ、Ｍ、、Ｃ，等の他の金Ｍｌｌｌヲ
使用した場合も本発明の範囲内であることは言うまでも
ｌよい。Further, although AI has been used as an example of the intermediate metal layer, it goes without saying that other metals such as Ti, +Si, M, C, etc. may also be used within the scope of the present invention.
さらに本ｍｌ１ｊ１１を通用するならば、第一にＸ線リ
ングラフィの最大の特長である超ａｍパターンサグミク
ロンパターンの転写を可能とするＸ線マス夕を得ること
ができ、第二に＃！敏祷で４痕のムＵの吸収体パターン
ｔ−確実に得ることができるＸ線マスク作表′、ｈ法を
提供でさ、第三に本発明によりるＸ−マスク、高ｉ度し
ジスト反び＊ｉ八へ十数人の範囲の渡統θ収Ｘ縁を放射
する線源との組合せによ、てＸ轍すソグラフィの実用化
・と一段と促進することができる。Furthermore, if this ml1j11 is applied, firstly, it will be possible to obtain an X-ray mass that enables the transfer of ultra-am patterns and sag-micron patterns, which is the greatest feature of X-ray phosphorography, and secondly, #! The present invention provides an X-ray mask table ', h method that can reliably obtain a four-mark absorber pattern T-mask according to the present invention. Thirdly, the X-mask according to the present invention can be By combining this with a radiation source that emits a cross-over θ-convergence/X-edge in the range of more than 10 people, it is possible to further promote the practical application of X-track lithography.
ン形成プロセスを示す図、第２図はリフトオフプ凶でめ
心。Figure 2 shows the lift-off process.
凶において、１ｒｉ８４りＸ ” ＊ ２は８ｉＮ
膜、３、よメッキペースＪ、４はポリイミド膜、５は電
子繊摘−されたレジストパターン、６はＴム蒸着躾、
７ｒよポリイミドパターン、８ばＸａａ収体ムパター
ン、２１Ｖ′Ｘ艷台形レジストバター／、２２は金属膜
パターン、３６は蒸着Ａ１１ｌｌ、３７は中。In evil, 1ri84riX ” * 2 is 8iN
film, 3, plating paste J, 4, polyimide film, 5, electronically ablated resist pattern, 6, Tm evaporation process;
7r is polyimide pattern, 8 is Xaa collection pattern, 21V'X trapezoidal resist butter/, 22 is metal film pattern, 36 is vapor deposition A11ll, 37 is medium.
間マスクとしての人１ｍｌパターンを示ｆ。A human 1 ml pattern is shown as a mask between f.
拠乙図Base map
Claims (1)
−し、前記金属膜パターンｆマスクとしＣ厚いｉ砿護パ
ター７を形成し、罰紀有機展パターンで利用してメ、＋
法によってＸ線吸収体パターンを形成し、前記有機膜バ
ター／を除去してＸ線マスク用の吸収体パターンｆ４る
Ｘ線マスク作製方法において、レジスト１（縞−された
パターン金途属膜バター：／ｒｃｆ侠する摩に、厚い奮
機膜上全ｍｌにめらかじの形成された金属膜を工、チン
グしＣ，前１金ＡＩ！パターンを得ることを特徴とする
Ｘ＠マスク作作方方法The pattern damaged on the resist is converted into a metal film pattern, and the metal film pattern f is used as a mask to form a thick protective pattern 7, which is used as a punishing organic pattern.
In the method for producing an X-ray mask, the resist 1 (striped patterned metal film butter) is formed by forming an X-ray absorber pattern by a method, and removing the organic film butter/to remove the absorber pattern f4 for the X-ray mask. :/rcf In order to achieve this, a metal film with a smooth surface is formed on the entire ml of the thick film, and a C, front 1 gold AI! pattern is obtained. method
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56188803A JPS5890729A (en) | 1981-11-25 | 1981-11-25 | Manufacture of x-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56188803A JPS5890729A (en) | 1981-11-25 | 1981-11-25 | Manufacture of x-ray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5890729A true JPS5890729A (en) | 1983-05-30 |
Family
ID=16230071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56188803A Pending JPS5890729A (en) | 1981-11-25 | 1981-11-25 | Manufacture of x-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5890729A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213131A (en) * | 1983-05-19 | 1984-12-03 | Toshiba Corp | Manufacture of x-ray exposing mask |
| US4939052A (en) * | 1986-02-03 | 1990-07-03 | Fujitsu Limited | X-ray exposure mask |
-
1981
- 1981-11-25 JP JP56188803A patent/JPS5890729A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213131A (en) * | 1983-05-19 | 1984-12-03 | Toshiba Corp | Manufacture of x-ray exposing mask |
| JPH0469410B2 (en) * | 1983-05-19 | 1992-11-06 | Tokyo Shibaura Electric Co | |
| US4939052A (en) * | 1986-02-03 | 1990-07-03 | Fujitsu Limited | X-ray exposure mask |
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