JPS57185437A - Production of x-ray exposure mask - Google Patents
Production of x-ray exposure maskInfo
- Publication number
- JPS57185437A JPS57185437A JP7046181A JP7046181A JPS57185437A JP S57185437 A JPS57185437 A JP S57185437A JP 7046181 A JP7046181 A JP 7046181A JP 7046181 A JP7046181 A JP 7046181A JP S57185437 A JPS57185437 A JP S57185437A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- electroplating
- thin film
- aperture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 abstract 16
- 239000010409 thin film Substances 0.000 abstract 5
- 238000009713 electroplating Methods 0.000 abstract 4
- 239000012212 insulator Substances 0.000 abstract 3
- 125000006850 spacer group Chemical group 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000006096 absorbing agent Substances 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 239000009719 polyimide resin Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Abstract
PURPOSE:To obtain an X-ray exposure mask with high yield, by providing an aperture to a spacer thick film with use of an insulator thin film between a base thin film and a spacer thick film as a stopper and removing the instulator thin film at the aperture part prior to the electroplating. CONSTITUTION:An X-ray transmitting supporter layer (like a silicon nitride film) 2 is formed on a mask supporter (like a silicon single crystal substrate) 1. A base thin film (gold film) 3 for electroplating is coated on the layer 2, and an insulator thin film (SiO2 film) 41 is put on the film 3. Furthermore a spacer thick film (polyimide resin film) 4 for electroplating is formed on the film 41, and an etching mask is formed on the film 4. Then the oxygen ion beam is irradiated 5 on the entire surface of the etching mask. the irradiated area of the film 4 is etched, and an aperture 6 is formed. The film 41 is removed by the buffered hydrofluoric acid and by using the film 4 as a mask, and the gold of the film 3 is partially exposed. Then the electroplating is carried out by using the film 3 as an electrode. Thus an X-ray, absorber pattern 7 is obtained. After this, the film 4 is removed, and the insulator 41 is removed to obtain the titled mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7046181A JPS57185437A (en) | 1981-05-11 | 1981-05-11 | Production of x-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7046181A JPS57185437A (en) | 1981-05-11 | 1981-05-11 | Production of x-ray exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57185437A true JPS57185437A (en) | 1982-11-15 |
| JPH0160934B2 JPH0160934B2 (en) | 1989-12-26 |
Family
ID=13432174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7046181A Granted JPS57185437A (en) | 1981-05-11 | 1981-05-11 | Production of x-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57185437A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213131A (en) * | 1983-05-19 | 1984-12-03 | Toshiba Corp | Manufacture of x-ray exposing mask |
-
1981
- 1981-05-11 JP JP7046181A patent/JPS57185437A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213131A (en) * | 1983-05-19 | 1984-12-03 | Toshiba Corp | Manufacture of x-ray exposing mask |
| JPH0469410B2 (en) * | 1983-05-19 | 1992-11-06 | Tokyo Shibaura Electric Co |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0160934B2 (en) | 1989-12-26 |
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