JPS6084817A - Mask for sor light exposure - Google Patents
Mask for sor light exposureInfo
- Publication number
- JPS6084817A JPS6084817A JP58192730A JP19273083A JPS6084817A JP S6084817 A JPS6084817 A JP S6084817A JP 58192730 A JP58192730 A JP 58192730A JP 19273083 A JP19273083 A JP 19273083A JP S6084817 A JPS6084817 A JP S6084817A
- Authority
- JP
- Japan
- Prior art keywords
- sor light
- film
- mask
- substrate
- sor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 abstract description 9
- 229920001721 polyimide Polymers 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 238000001020 plasma etching Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は半導体装置の製造工程において用いられるＳ
ＯＲ（Ｓｉｎｃｒｏｔｒｏｎ ０ｒｂｉｔａｌ Ｒａｄ
ｉａｔｉｏｎ）光露光用マスクに関するも６である。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to an S
OR (Syncrotron Orbital Rad
ation) 6 regarding a mask for light exposure.
最近、例えば１μｍ前後のパターンを形成するためにＸ
線露光技術が注目されている。従来用いられてきたＸ線
露光装置のＸ線発生部は一般的に金属ターゲット及び電
子線発生装置から成っており、電子線を金属ターゲット
に照射することによってＸ線を発生している。ところで
このようなＸ線源の欠点として、
＋１１ 強度が弱く、そのために露光時間が長くなる
（２） 点光源からの発散光であるために、Ｘ線マスク
とウェハとの間隙によりパターンぼけが生じる
等の問題がある。Recently, for example, in order to form a pattern of around 1 μm,
Line exposure technology is attracting attention. An X-ray generating section of a conventional X-ray exposure apparatus generally includes a metal target and an electron beam generator, and generates X-rays by irradiating the metal target with an electron beam. By the way, the disadvantages of such an X-ray source are: +11 The intensity is weak, which increases the exposure time (2) Since the light is diverging from a point light source, pattern blurring occurs due to the gap between the X-ray mask and the wafer. There are other problems.
最近従来のＸ線露光用線源の欠点を補う新しい線源とし
てＳＯＲ光が注目されている。このＳＯＲ光は、
（１）Ｘ線強度が非常に強い
（２） 線束が平行に近い
（３）連続光である
等の特長を備え、Ｘ線露光用線源として理想的であり、
今後のサブミクロンパターン形成に極めて有効である。Recently, SOR light has been attracting attention as a new source that compensates for the drawbacks of conventional X-ray exposure sources. This SOR light has the following characteristics: (1) very strong X-ray intensity, (2) nearly parallel ray flux, and (3) continuous light, making it ideal as a source for X-ray exposure.
This is extremely effective for future submicron pattern formation.
このＳＯＲ光を用いたＸ線露光用マスク（以下ＳＯＲ用
マスクと称す）は通常第１図に示すように、ＳＯＲ光透
過基板２およびＳＯＲ光吸収層１から成っている。そし
て通常ＳＯＲ光透過基板２の材料としてはＳｉＮ 、
、ＳｉＣ、ＢＮ等の無機材料やポリイミド等の有機材料
が用いられ、またＳＯ’Ｒ光吸収Ｊｉ＃！ｌの材料とし
ては軟Ｘ線に対して高い吸収係数をもつ金が一般的であ
る。A mask for X-ray exposure using this SOR light (hereinafter referred to as an SOR mask) usually consists of an SOR light transmitting substrate 2 and an SOR light absorbing layer 1, as shown in FIG. The material of the SOR light transmitting substrate 2 is usually SiN,
Inorganic materials such as , SiC, BN and organic materials such as polyimide are used, and SO'R light absorption Ji#! Gold, which has a high absorption coefficient for soft X-rays, is generally used as a material for the material.
ところが、この吸収層となる金のパターン形成は金が化
学的に安定であるが故に、通常り”ソグラフィ一工程で
用いられるガスプラズマエツチングや反応性イオンエツ
チング等の反応性ガスを用いたドライエツチング技術を
適用することができない。さらに金は各種薬品に対して
も安定であるために、ウェットエツチングを適用するこ
とは困難である。However, because gold is chemically stable, gold pattern formation for this absorbing layer is usually done by dry etching using a reactive gas such as gas plasma etching or reactive ion etching, which are used in one step of lithography. Furthermore, since gold is stable against various chemicals, it is difficult to apply wet etching.
このために金のパターン形成にはリフトオフプロセスを
用いるのが一般的であるが、この方法は工程が複雑なた
めに安牽゛シたパターン形成が不可能であり、またパタ
ーン欠陥が発生し易い等の問題があり、微細パターンの
形成方法としては不適当である。For this reason, a lift-off process is generally used to form gold patterns, but this method is complicated, making it impossible to form patterns reliably, and pattern defects are likely to occur. There are problems such as these, making it inappropriate as a method for forming fine patterns.
またイオンミリング（Ｉｏｎ ＋ｏｉｌｌｉｎｇ）法は
アルゴン等の不活性イオンを試料に照射し、物理反応の
みによってエツチングを行なうドライエツチング技術の
うちの１方法であるが、この方法は金のエッチレイトが
比較的高いということで、金のバターニングに適用され
ている。しかしながら、イオンミリング法によってエツ
チングされた試料のれ難い。Ion + oiling is one of the dry etching techniques that irradiates the sample with inert ions such as argon and performs etching only by physical reaction, but this method has a relatively low etch rate for gold. Because it is expensive, it is applied to gold buttering. However, it is difficult to remove samples etched by ion milling.
さらに金は基板との接着性が悪いために、基板との間に
タンタルやクロム等の接着性に優れた材料をはさみ込ん
だ多層構造をとる必要があり、マも高くなる。Furthermore, since gold has poor adhesion to the substrate, it is necessary to have a multilayer structure in which a material with excellent adhesion, such as tantalum or chromium, is sandwiched between the gold and the substrate, which increases the cost.
本発明は上記のような従来のものの問題点に鑑みてなさ
れたもので、ＳＯＲ光透過基板上にパターン形成される
Ｓ ’ＯＲ光吸収層材料として、シリコンまたはシリコ
ン化合物を用いることにより、造コストの低減化を図る
ことができるＳＯＲ光露光用マスクを提供することを目
的としている。The present invention has been made in view of the problems of the conventional ones as described above, and by using silicon or a silicon compound as the material for the S'OR light absorption layer patterned on the SOR light transmission substrate, the manufacturing cost can be reduced. It is an object of the present invention to provide a mask for SOR light exposure that can reduce the
以下、この発明の一実施例を図について説明すりの一例
を製造工程順に示したものである。図において、４は露
光用のＳＯＲ光が照射されるＳＯＲ光透過基板となるポ
リイミド膜、５はポリイミドＩ！ｉｉ４上にパターン形
成されＳＯＲ光吸収層となるＳｉ膜、６はレジストパタ
ーン、３はＳｔ基板である。Hereinafter, an embodiment of the present invention will be explained with reference to the drawings, which are shown in the order of manufacturing steps. In the figure, 4 is a polyimide film serving as an SOR light transmitting substrate onto which SOR light for exposure is irradiated, and 5 is a polyimide film I! A Si film is patterned on ii4 to become an SOR light absorption layer, 6 is a resist pattern, and 3 is an St substrate.
次にその製造工程について説明する。Next, the manufacturing process will be explained.
まずＳｔ基板３上にＳＯＲ光透過基板４となるポリイミ
ド膜を４μｍ厚に形成する（第２図（ａ））。First, a 4 μm thick polyimide film that will become the SOR light transmitting substrate 4 is formed on the St substrate 3 (FIG. 2(a)).
次にポリイミド膜４上にＳｉ膜５をＣＶＤ法により５０
００人厚に形成しく第２図（ｂ）） 、このＳｉｌ費５
上に所望のレジストパターン６を形成する（第２図（ｅ
））。そして更にこのレジストパターン６をマスクにし
てＳｉ膜５をエツチング除去する。この時装置は反応性
イオンエツチング装置を用い、ガスはＣへを用いた（第
２図（ｄ））。この後酸素プラズマによりレジスト６の
剥離を行ない、さらに別基板３の図示中央部をＫＯＨ液
でエツチング除去した（第２図（ｅ））。Next, a Si film 5 is deposited on the polyimide film 4 using a CVD method.
Figure 2 (b)), this Sil cost 5
A desired resist pattern 6 is formed thereon (see FIG. 2(e)
)). Then, using this resist pattern 6 as a mask, the Si film 5 is removed by etching. At this time, a reactive ion etching device was used, and carbon gas was used as the gas (FIG. 2(d)). Thereafter, the resist 6 was removed using oxygen plasma, and the central portion of another substrate 3 as shown in the figure was etched away using a KOH solution (FIG. 2(e)).
対し大きな吸収係数をもっているので、５ｉｌｌｉ５は
′吸収層としての役割を十分果たしうる。さらにＳｉ
系膜は弗素あるいは塩素系ガスに対して反応性が大きい
ので、一般に用いられるプラズマエツチングや反応性イ
オンエツチングによってパターン形成を行なうことがで
きる。またＳｔは基板との接着性が大きいので、透過基
板４とＳｉ膜５との間に他の材料をはさみ込む必要がな
い。さらにＳｉは金と比べて廉価であるので、製造コス
トも低減される。On the other hand, since it has a large absorption coefficient, 5illi5 can sufficiently play the role of an absorption layer. Furthermore, Si
Since the system film has high reactivity to fluorine or chlorine gas, pattern formation can be performed by commonly used plasma etching or reactive ion etching. Furthermore, since St has strong adhesion to the substrate, there is no need to sandwich other materials between the transparent substrate 4 and the Si film 5. Furthermore, since Si is less expensive than gold, manufacturing costs are also reduced.
なお、上記実施例においては吸収層を５ｉ１９Ｉとした
が、ＳｉＮあるいは５ｉ０２等のＳｔ化合物を用いても
同様な効果をもつことができる。In the above embodiment, the absorption layer is made of 5i19I, but the same effect can be obtained by using SiN or an St compound such as 5i02.
また上記実施例では基板材料としてポリイミド膜を用い
たが、他の無機、有機材料あるいはそれらの複合膜を用
いてもよい。またＳｉ系膜のパターン形成は他のいかな
る方法で行なってもよい。Furthermore, although a polyimide film was used as the substrate material in the above embodiments, other inorganic or organic materials or composite films thereof may also be used. Further, pattern formation of the Si-based film may be performed by any other method.
以上のように、本発明によれば、ＳＯＲ光透過基板上に
パターン形成されるＳＯＲ光吸収層材料の簡略化、製造
コストの低減化を図ることができる効果がある。As described above, according to the present invention, it is possible to simplify the material of the SOR light absorption layer patterned on the SOR light transmission substrate and to reduce the manufacturing cost.
第１図は従来のＳＯＲ光露光用マスクの構成を示す断面
図、第２図は本発明の一実施例によるＳＯＲ光露光用マ
スクの製造プロセスの一例を示す断面図である。
４・・・ポリイミド膜（ＳＯＲ光透過基板）、５・・・
Ｓｉ膜（ＳＯＲ光吸収層）。
代理人 大岩増雄FIG. 1 is a sectional view showing the structure of a conventional SOR light exposure mask, and FIG. 2 is a sectional view showing an example of a manufacturing process of a SOR light exposure mask according to an embodiment of the present invention. 4... Polyimide film (SOR light transmission substrate), 5...
Si film (SOR light absorption layer). Agent Masuo Oiwa
Claims (1)
板と、該ＳＯＲ光透過基板上にパターン形成されたシリ
コンもしくはシリコン化合物からなるＳＯＲ光吸収層と
を備えたことを特徴とするＳＯＲ光露光用マスク。(1) SOR light exposure characterized by comprising an SOR light transmitting substrate that transmits SOR light for exposure, and an SOR light absorbing layer made of silicon or a silicon compound patterned on the SOR light transmitting substrate. mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58192730A JPS6084817A (en) | 1983-10-15 | 1983-10-15 | Mask for sor light exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58192730A JPS6084817A (en) | 1983-10-15 | 1983-10-15 | Mask for sor light exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6084817A true JPS6084817A (en) | 1985-05-14 |
Family
ID=16296108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58192730A Pending JPS6084817A (en) | 1983-10-15 | 1983-10-15 | Mask for sor light exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6084817A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005076078A2 (en) * | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Mask for use in a microlithographic projection exposure system |
-
1983
- 1983-10-15 JP JP58192730A patent/JPS6084817A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005076078A2 (en) * | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Mask for use in a microlithographic projection exposure system |
| WO2005076078A3 (en) * | 2004-02-09 | 2008-12-11 | Zeiss Carl Smt Ag | Mask for use in a microlithographic projection exposure system |
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