JPH03167842A - Package for semiconductor-element - Google Patents
Package for semiconductor-elementInfo
- Publication number
- JPH03167842A JPH03167842A JP30861589A JP30861589A JPH03167842A JP H03167842 A JPH03167842 A JP H03167842A JP 30861589 A JP30861589 A JP 30861589A JP 30861589 A JP30861589 A JP 30861589A JP H03167842 A JPH03167842 A JP H03167842A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- external lead
- glass
- lead terminal
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 239000011521 glass Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000945 filler Substances 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 6
- 229910052878 cordierite Inorganic materials 0.000 claims abstract description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052718 tin Inorganic materials 0.000 claims abstract description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 5
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 5
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910000174 eucryptite Inorganic materials 0.000 claims abstract description 5
- 229910000464 lead oxide Inorganic materials 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000011787 zinc oxide Substances 0.000 claims abstract description 5
- 229910052845 zircon Inorganic materials 0.000 claims abstract description 5
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims abstract description 5
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052839 forsterite Inorganic materials 0.000 claims description 6
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052844 willemite Inorganic materials 0.000 claims description 5
- 238000007789 sealing Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- 239000005394 sealing glass Substances 0.000 description 21
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910000833 kovar Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子を収容する半導体素子収納用パッケ
ージの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a semiconductor element housing package that houses a semiconductor element.
（従来の技術）
従来、半導体素子を収容するためのパッケージ、特にガ
ラスの溶着によって封止するガラス封止型半導体素子収
納用パッケージは、絶縁基体と蓋体とから威り、内部に
半導体素子を収容する空所を有するｍ縁容器と、該容器
内に収容される半導体素子を外部電気回路に電気的に接
続するための外部リード端子とから構威されており、絶
縁基体及び蓋体の相対向する主面に予め封止用のガラス
部材を被着形成すると共に、絶縁基体主面に外部リード
端子を固定し、半導体素子の各電極と外部リード端子と
をワイヤボンド接続した後、ｗＡ縁基体及び蓋体のそれ
ぞに被着させた封止用のガラス部材を溶融一体化させる
ことによって内部に半導体素子を気密に封止している。(Prior Art) Conventionally, packages for accommodating semiconductor devices, especially glass-sealed semiconductor device storage packages that are sealed by glass welding, are made up of an insulating base and a lid, and the semiconductor devices are not placed inside. It consists of an m-rimmed container having a cavity for accommodating the semiconductor device, and an external lead terminal for electrically connecting the semiconductor device accommodated in the container to an external electric circuit. A glass member for sealing is previously formed on the facing main surface, external lead terminals are fixed to the main surface of the insulating substrate, and each electrode of the semiconductor element and the external lead terminal are connected by wire bonding, and then the wA edge is The semiconductor element is hermetically sealed inside by melting and integrating sealing glass members attached to each of the base and the lid.
（発明が解決しようとする課題〉
しかしケら、この従来のガラス封止型半導体素子収納用
パッケージは通常、外部リード端子がコバーＪｌ／（２
９ ＷｔＸ Ｎｉ−１６ ＷｔＸ Ｃｏ−５５ Ｗｔ％
Ｆｅ合金）や４２＾１１ｏｙ（４２ ＷｔχＮｉ−５８
ＷｔχＦｅ合金）の導電性材料から戒っており、該コ
バールや４２Ａ Ｉ ｊｏｙ等は導電率が低いことから
以下に述べる欠点を有する。(Problems to be Solved by the Invention) However, in this conventional glass-sealed semiconductor element storage package, the external lead terminals are usually
9 WtX Ni-16 WtX Co-55 Wt%
Fe alloy) and 42^11oy (42 WtχNi-58
(WtχFe alloy), and Kovar, 42A I joy, and the like have low conductivity and have the following drawbacks.
即ち、
■コバールや４２Ａ１１ｏｙはその導電率が３．０〜３
．５χ（ＩＡＣＳ）と低い。そのためこのコバールや４
２＾１ １ｏｙ等から或る外部リード端子に信号を伝搬
させた場合、信号の伝搬速度が極めて遅いものとなり、
高速駆動を行う半導体素子はその収容が不可となってし
まう、
■半導体素子収納用バフケージの内部に収容する半導体
素子の高密度化、高集積化の進展に伴い、半導体素子の
電極数が大幅に増大しており、半導体素子の各電極を外
部電気回路に接続する外部リード端子の線幅も極めて細
くなってきている。そのため外部リード端子は上記■に
記載のコバールや４２Ａ １ ｔｏｙの導電率が低いこ
とと相俊って電気抵抗が極めて大きなものになってきて
おり、外部リ一ド端子に信号を伝搬させると、該外部リ
ード端子の電気抵抗に起因して信号が大きく減衰し、内
部に収容する半導体素子に信号を正確に入力することが
できず、半導体素子に誤動作を生じさせてしまう、
等の欠点を有していた。That is, ■ Kovar and 42A11oy have an electrical conductivity of 3.0 to 3.
．． It is as low as 5χ (IACS). Therefore, this Kobar and 4
2^1 When a signal is propagated from 1oy etc. to a certain external lead terminal, the signal propagation speed becomes extremely slow.
Semiconductor elements that drive at high speeds cannot be accommodated. ■With the progress of higher density and higher integration of semiconductor elements housed inside buff cages for storing semiconductor elements, the number of electrodes on semiconductor elements has increased significantly. The line width of external lead terminals that connect each electrode of a semiconductor element to an external electric circuit is also becoming extremely narrow. Therefore, the electrical resistance of the external lead terminal has become extremely large due to the low conductivity of Kovar and 42A 1 toy described in (■) above, and when a signal is propagated to the external lead terminal, There are drawbacks such as the signal is greatly attenuated due to the electrical resistance of the external lead terminal, making it impossible to accurately input the signal to the semiconductor element housed inside, causing the semiconductor element to malfunction. Was.
（発明の目的）
本発明は上記欠点に鑑み案出されたもので、その目的は
外部リード端子における信号の減衰を極小となし、内部
に収容する半導体素子への信号の人出力を確実に行うこ
とを可能として半導体素子を長期間にわたり正常、且つ
安定に作動させることができる半導体素子収納用パッケ
ージを提供することにある。(Object of the Invention) The present invention was devised in view of the above-mentioned drawbacks, and its purpose is to minimize the attenuation of signals at external lead terminals and ensure the output of signals to semiconductor elements housed inside. It is an object of the present invention to provide a package for storing a semiconductor element, which enables the semiconductor element to operate normally and stably for a long period of time.
また本発明の他の目的は高速駆動を行う半導体素子を収
容することができる半導体素子収納用パッケージを提供
することにある。Another object of the present invention is to provide a semiconductor device storage package that can accommodate semiconductor devices that operate at high speed.
（課題を解決するための手段）
本発明は内部に半導体素子を収容するための空所を有す
る絶縁容器に外部リード端子をガラス部材を介して取着
して或る半導体素子収納用パッケージにおいて、前記絶
縁容器をフォルステライト質焼結体もしくはジルコニア
質焼結体で、外部リード端子を熱膨張係数９５乃至１１
０ ×１０−’／ ’Ｃ、導電率１２２（ ＩＡＣＳ
）以上の金属で、ガラス部材を酸化鉛７０．０乃至９０
．ＯＷｔＸ 、酸化ホウ素１０．０乃至１５．ＯＷｔＸ
，シリカ０．５乃至３．０Ｗｔ％ ， ７ルミナ０．
５乃至３．Ｏ ＷｔＸ 、酸化亜鉛及び酸化ビスマス３
．Ｏ Ｗｔχ以下から或るガラス戒分にフィラーとして
チタン酸鉛、β−ユークリプタイト、コージライト、ジ
ルコン、酸化錫、ウイレマイト及びチタン酸錫の少なく
とも１種を１５Ｖｏｌ！以下添加したガラスで形威した
ことを特徴とするものである。(Means for Solving the Problems) The present invention provides a semiconductor device storage package in which an external lead terminal is attached via a glass member to an insulating container having a cavity for accommodating a semiconductor device inside. The insulating container is made of a forsterite sintered body or a zirconia sintered body, and the external lead terminal has a thermal expansion coefficient of 95 to 11.
0 × 10-'/'C, conductivity 122 (IACS
) or above, and the glass member is made of lead oxide of 70.0 to 90.
．． OWtX, boron oxide 10.0 to 15. OWtX
, silica 0.5 to 3.0 Wt%, 7 lumina 0.
5 to 3. O WtX , zinc oxide and bismuth oxide 3
．． 15 Vol of at least one of lead titanate, β-eucryptite, cordierite, zircon, tin oxide, willemite, and tin titanate is added to a certain glass fraction from O Wtχ as a filler! It is characterized by being enhanced by the following added glass.
（実施例〉 次に本発明を添付図面に基づき詳細に説明する。(Example> Next, the present invention will be explained in detail based on the accompanying drawings.
第１図及び第２図は本発明の半導体素子収納用パッケー
ジの一実施例を示し、１は絶縁基体、２は蓋体である。FIGS. 1 and 2 show an embodiment of the semiconductor element storage package of the present invention, where 1 is an insulating base and 2 is a lid.
この絶縁基体１と蓋体２とにより絶縁容器３が構威され
る。The insulating base 1 and the lid 2 constitute an insulating container 3.
前記絶縁基体１及び蓋体２はそれぞれの中央部？半導体
素子を収容する空所を形戒するための凹部が設けてあり
、絶縁基体１の凹部底面には半導体素子４が樹脂、ガラ
ス、ロウ剤等の接着剤を介し取着固定される。The insulating base 1 and the lid 2 are located at the center of each other? A recess is provided to define a space for accommodating a semiconductor element, and a semiconductor element 4 is attached and fixed to the bottom of the recess of the insulating substrate 1 via an adhesive such as resin, glass, or wax.
前記絶縁基体１及び蓋体２はフォルステライト質焼結体
もしくはジルコニア質焼結体から戒り、第１図に示すよ
うな絶縁基体ｌ及び蓋体２に対応した形状を有するプレ
ス型内に、フォルステライトｉ焼結体の場合はマグネシ
ア（ ＭｇＯ ） 、シリカ（ＳｉＯ■）等の原料粉末
を、ジルコニア質焼結体の場合は酸化ジルコニウム（Ｚ
ｒＯｚ）、イフトリア（ＹｚＯ＋）等の原料粉末を充填
させるとともに一定圧力を印加して戒形し、しかる後、
成形品を約１２００〜１５００℃の温度で焼戒すること
によって製作される。The insulating base 1 and the lid 2 are made of a forsterite sintered body or a zirconia sintered body, and are placed in a press mold having a shape corresponding to the insulating base 1 and the lid 2 as shown in FIG. In the case of forsterite i sintered bodies, raw material powders such as magnesia (MgO) and silica (SiO) are used, and in the case of zirconia sintered bodies, zirconium oxide (Z) is used.
Filled with raw material powder such as rOz), Iftoria (YzO+), etc., and fixed by applying a constant pressure, and then
It is manufactured by burning a molded product at a temperature of about 1200 to 1500°C.
尚、前記絶縁基体１及び蓋体２を形成するフォルステラ
イト質焼結体もしくはジルコニア質焼結体はその熱膨張
係数が１００乃至１１０ ｘｌＯ−’／ ℃であり、後
述する封止用ガラス部材の熱膨張係数との関係において
絶縁基体１及び蓋体２と封止用ガラス部材間に大きな熱
膨張の差が生じることばない．
また前記絶縁基体ｌ及び蓋体２にはその相対向する主面
に封止用のガラス部材６が予め被着形戒されており、該
絶縁基体１及び蓋体２の各々に被着されている封止用ガ
ラス部材６を加熱溶融させ一体化させることにより絶縁
容器３内の半導体素子４を気密に封止する。The forsterite sintered body or the zirconia sintered body forming the insulating base 1 and the lid 2 have a coefficient of thermal expansion of 100 to 110 xlO-'/°C, and are similar to those of the sealing glass member described below. In relation to the coefficient of thermal expansion, no large difference in thermal expansion occurs between the insulating substrate 1, the lid 2, and the sealing glass member. Further, a sealing glass member 6 is preliminarily adhered to the insulating base 1 and the lid 2 on their opposing main surfaces, and is adhered to each of the insulating base 1 and the lid 2. The semiconductor element 4 inside the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 to be integrated.
前記絶縁基体１及び蓋体２の相対向する主面に被着され
る封止用ガラス部材６は、酸化鉛７０．０乃至９０．Ｏ
ＷｔＸ 、酸化ホウ素１０．０乃至１５．ＯＷｔＸ 、
シリカ０．５乃至３．０Ｗｔ％、アルミナ０．５乃至３
．０ Ｗｔχ、酸化亜鉛及び酸化ビスマス３．Ｏ Ｗｔ
Ｘ以下から成るガラス成分にフィラーとしてのチタン酸
鉛、β−ユークリプタイト、コージライト、ジルコン、
酸化錫、ウイレマイト及びチタン酸錫の少なくとも１種
を１５ＶｏｌＸ以下添加したガラスより威り、上記各戒
分を所定の値となるように秤量混合すると共に、該混合
粉末を９５０〜１１００℃の温度で加熱溶融させること
によって製作される．このガラス部材６の熱膨張係数は
９０乃至１２０ ×１０−’／ ｔである．前記封止用
ガラス部材６は、その熱膨張係数が９０乃至１２０ ×
１０−’／ ”Ｃであり、絶縁基体ｌ及び蓋体２の各々
の熱膨張係数と近似することから絶縁基体１及び蓋体２
の各々に被着されている封止用ガラス部材６を加熱溶融
させ一体化させることにより絶縁容器３内の半導体素子
４を気密に封止する際、絶縁基体ｌ及び蓋体２と封止用
ガラス部材６との間には両者の熱膨張係数の相違に起因
する熱応力が発生することは殆どなく、絶縁基体１と蓋
体２とを封止用ガラス部材６を介し強固に接合すること
が可能となる．
尚、前記封止用ガラス部材６は酸化鉛（ＰｂＯ）が７０
．０１ｆｔ！未満であるとガラスの熱膨張が小さくなっ
て絶縁基体ｌと蓋体２の熱膨張と合わなくなり、また９
Ｇ．０Ｗｔ％を越えるとガラスの耐薬品性が劣化して絶
縁容器３の気密封止の信頼性が大きく低下スルタメ酸化
鉛（ＰｂＯ） ＆＊７０．０乃至９０．ＯＷｔｌ ノ範
囲に限定される．
また酸化ホウ素（Ｂｔｕｓ）が１０．０Ｗｔ％未満であ
るとガラスの熱膨張が大きくなって絶縁基体ｌと蓋体？
の熱膨張と合わなくなり、また１５．０ＷｔＸを越える
とガラスの耐薬品性が劣化して絶縁容器３の気密封止の
信頼性が大きく低下するため酸化ホウ素（ａｔｏｓ）は
１０．０乃至１５．ＯＷｔＸ （７）範囲ニｌｌｌ定サ
レル．またアルミナ（ Ａｌｔｏｚ ）が０．５ Ｗｔ
χ未満であるとガラスの結晶化が進んで絶縁容器３の気
密封止が困難となり、また３．Ｏ ＷｔＸを越えるとガ
ラスの熱膨張が小さくなって絶縁基体ｌと蓋体２の熱膨
張と合わなくなることからアルξナ（ ＡｌｇＯｓ ）
は０．５乃至３．Ｏ Ｉ１ｔχの範囲に限定される。The sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2 is made of lead oxide of 70.0 to 90.0%. O
WtX, boron oxide 10.0 to 15. OWtX,
Silica 0.5 to 3.0 Wt%, alumina 0.5 to 3
．． 0 Wtχ, zinc oxide and bismuth oxide3. O Wt
Lead titanate as a filler, β-eucryptite, cordierite, zircon,
At least one of tin oxide, willemite, and tin titanate is added to the glass with 15 Vol It is manufactured by heating and melting it. The coefficient of thermal expansion of this glass member 6 is 90 to 120 x 10-'/t. The sealing glass member 6 has a thermal expansion coefficient of 90 to 120 ×
10-'/''C, which approximates the coefficient of thermal expansion of each of the insulating base 1 and the lid 2, so the insulating base 1 and the lid 2
When the semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 attached to each of the insulating base l and the lid 2, The insulating base 1 and the lid body 2 can be firmly joined through the sealing glass member 6, with almost no thermal stress occurring between the glass member 6 and the glass member 6 due to the difference in coefficient of thermal expansion between the two. becomes possible. Note that the sealing glass member 6 contains 70% lead oxide (PbO).
．． 01ft! If it is less than 9, the thermal expansion of the glass will be so small that it will not match the thermal expansion of the insulating base 1 and the lid 2.
G. If it exceeds 0 Wt%, the chemical resistance of the glass deteriorates and the reliability of hermetic sealing of the insulating container 3 decreases significantly.Lead Sultame Oxide (PbO) &*70.0 to 90. Limited to the OWtl range. In addition, if the boron oxide (Btus) content is less than 10.0 Wt%, the thermal expansion of the glass will increase, causing the insulating base l and the lid to become larger.
If it exceeds 15.0 WtX, the chemical resistance of the glass will deteriorate and the reliability of hermetic sealing of the insulating container 3 will be greatly reduced. OWtX (7) Range Nill constant Sarel. Also, alumina (Altoz) is 0.5 Wt.
If it is less than χ, crystallization of the glass will progress, making it difficult to hermetically seal the insulating container 3, and 3. If O WtX is exceeded, the thermal expansion of the glass becomes small and does not match the thermal expansion of the insulating base 1 and the lid 2, so AlgOs
is 0.5 to 3. O I1tχ range.
またシリカ（ＳｉＯ■）が０．５ Ｗｔχ未満であると
ガラスの結晶化が進んで絶縁容器３の気密封止が困難と
なり、また３．Ｏ ＷｔＸを越えると絶縁容器３に外部
リード端子５をガラス部材６を介して取着する際、ガラ
スの溶融温度が上がり、絶縁容器３内部に収容する半導
体素子に熱劣化を招来させることからシリカ（Ｓｉｆｔ
）は０．５０乃至３．Ｏ Ｗｔχの範囲に限定される。Furthermore, if the amount of silica (SiO■) is less than 0.5 Wtχ, crystallization of the glass will progress, making it difficult to hermetically seal the insulating container 3, and 3. If O WtX is exceeded, the melting temperature of the glass will rise when attaching the external lead terminal 5 to the insulating container 3 via the glass member 6, causing thermal deterioration of the semiconductor element housed inside the insulating container 3. (Sift
) is 0.50 to 3. O Wtχ range.
また酸化亜鉛（ＺｎＯ）が３．０％ｌｌ１２を越えると
ガラスの結晶化が進んで絶縁容器３の気密封止が困難と
なることから酸化亜鉛（ＺｎＯ）は３．Ｏ ＷｔＸ以下
に限定される．
また酸化ビスマス（Ｂｉｇ（ｈ）が３．Ｏ ＷｔＸを越
えるとガラスの耐薬品性が劣化して絶縁容器３の気密封
止の信頼性が大きく低下するため酸化ビスマス（Ｂｉｚ
（ｈ）は３．Ｏ ＷｔＸ以下に限定される。Furthermore, if zinc oxide (ZnO) exceeds 3.0%ll12, crystallization of the glass will progress and it will be difficult to hermetically seal the insulating container 3. O Limited to WtX or less. In addition, if bismuth oxide (Big(h) exceeds 3.0
(h) is 3. Limited to O WtX or less.
更にフィラーとして添加されるチタン鉛（ＰｂＴｉ０３
）、β−ユークタプタイト（ＬｉＪｈＳｉｇＯｓ） 、
コージライト（ＭｇｚＡｌ＊ＳｉｓＯ＋ｓ）、ジ７Ｌ／
コン（ＺｒＳｉＯｎ）、酸化錫（Ｓｎｏｗ）、ウィレ
マイト（ＺｎｔＳｉＯａ）及びチタン酸錫（ＳｎｔＳｉ
Ｏａ）の少なくとも１種が１５Ｖｏｌ％を越えるとガラ
スの熱膨張が絶縁基体ｌと蓋体２の熱膨張に合わなくな
ることからその添加は１５ＶｏｌＸ以下に限定される。Furthermore, titanium lead (PbTi03) is added as a filler.
), β-eutaptite (LiJhSigOs),
Cordierite (MgzAl*SisO+s), Di7L/
ZrSiOn, tin oxide (Snow), willemite (ZntSiOa) and tin titanate (SntSi
If at least one of Oa) exceeds 15 Vol%, the thermal expansion of the glass will not match the thermal expansion of the insulating base 1 and the lid 2, so its addition is limited to 15 VolX or less.
前記封止用ガラス部材６は前述した成分から或るガラス
に適当な有機溶剤、溶媒を添加して得たガラスペースト
を従来周知の厚膜手法を採用することによって絶縁基体
ｌ及び蓋体２の相対向する主面に被着形戒される。The sealing glass member 6 is made by applying a conventionally well-known thick film method to a glass paste obtained by adding a suitable organic solvent or solvent to a certain glass from the above-mentioned components. Adhesive forms are applied to the opposing main surfaces.
前記絶縁基体ｌと蓋体２との間には導電性材料から成る
外部リード端子５が配されており、該外部リード端子５
は半導体素子４の各電極がワイヤ７を介し電気的に接続
され、外部リード端子５を外部電気回路に接続すること
によって半導体素子４が外部電気回路に接続されること
となる。An external lead terminal 5 made of a conductive material is disposed between the insulating base l and the lid 2.
Each electrode of the semiconductor element 4 is electrically connected via the wire 7, and the semiconductor element 4 is connected to the external electric circuit by connecting the external lead terminal 5 to the external electric circuit.
前記外部リード端子５は絶縁基体１と蓋体２の相対向す
る主面に被着させた封止用ガラス部材６を溶融一体化さ
せ、絶縁容器３を気密封止する際に同時に絶縁基体１と
蓋体２との間に取着される。The external lead terminal 5 is formed by melting and integrating the sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating base 1 when the insulating container 3 is hermetically sealed. and the lid body 2.
前記外部リード端子５は非磁性体金属である銅（Ｃｕ）
から或る芯体の外表面にニッケルー鉄合金（Ｎｉ−Ｆｅ
合金）を接合させたもの等から成り、その導電率は１２
ｍ（ＩＡＣＳ）以上、熱膨張係数は９５乃至１１０ｘｌ
ｏ−’／ ’ｃの導電性材料から成る。The external lead terminal 5 is made of copper (Cu), which is a non-magnetic metal.
Nickel-iron alloy (Ni-Fe alloy) is applied to the outer surface of a certain core from
The electrical conductivity is 12
m (IACS) or more, thermal expansion coefficient is 95 to 110xl
o-'/'c conductive material.
前記外部リード端子５はその導電率がｌ２χＯＡＣＳ）
以上であり、電気を流し易いことから外部リード端子５
の信号伝搬速度を極めて速いものとなすことができ、絶
縁容器３内に収容した半導体素子４を高速駆動させたと
しても半導体素子４と外部電気回路との間における信号
の出し入れは常に安定、且つ確実となすことができる。The external lead terminal 5 has a conductivity of l2χOACS)
As above, since it is easy to conduct electricity, the external lead terminal 5
The signal propagation speed can be made extremely high, and even if the semiconductor element 4 housed in the insulating container 3 is driven at high speed, the signal input and output between the semiconductor element 4 and the external electric circuit is always stable. It can be done with certainty.
また外部リード端子５の導電率が高いことから外部リー
ド端子５の線幅が細くなったとしても外部リード端子５
の電気抵抗を低く抑えることができ、その結果、外部リ
ード端子５における信号の減衰を極小として内部に収容
する半導体素子４に外部電気回路から供給される電気信
号を正確に入力することができる。Furthermore, since the conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 becomes thin, the external lead terminal 5
As a result, the attenuation of the signal at the external lead terminal 5 is minimized, and the electrical signal supplied from the external electrical circuit can be accurately input to the semiconductor element 4 housed inside.
更に前記外部リード端子５はその熱膨張係数が９５乃至
１１０ ｘｌＯ−’／ ℃であり、封止用ガラス部材６
の熱膨張係数と近似することから外部リード端子５を絶
縁基体１と蓋体２の間に封止用ガラス部材６を用いて固
定する際、外部リード端子５と封止用ガラス部材６との
間には両者の熱膨張係数の相違に起因する熱応力が発生
することはなく、外部リード端子５を封止用ガラス部材
６で強固に固定することも可能となる。Furthermore, the external lead terminal 5 has a thermal expansion coefficient of 95 to 110 xlO-'/°C, and the sealing glass member 6
When the external lead terminal 5 is fixed between the insulating base 1 and the lid 2 using the sealing glass member 6, the thermal expansion coefficient of the external lead terminal 5 and the sealing glass member 6 is approximated by Thermal stress due to the difference in coefficient of thermal expansion between the two does not occur, and the external lead terminal 5 can be firmly fixed with the sealing glass member 6.
かくして、この半導体素子収納用パッケージによれば絶
縁基体１の凹部底面に半導体素子４を取着固定するとと
もに該半導体素子４の各電極をボンディングワイヤ７に
より外部リード端子５に接続させ、しかる後、絶縁基体
１と蓋体２とを該絶縁基体ｌ及び蓋体２の相対向する主
面に予め被着させておいた封止用ガラス部材６を溶融一
体化させることによって接合させ、これによって最終製
品としての半導体装置が完戒する。Thus, according to this semiconductor element storage package, the semiconductor element 4 is attached and fixed to the bottom surface of the recess of the insulating substrate 1, and each electrode of the semiconductor element 4 is connected to the external lead terminal 5 by the bonding wire 7, and then, The insulating base 1 and the lid 2 are joined together by melting and integrating the sealing glass member 6 that has been previously applied to the opposing main surfaces of the insulating base 1 and the lid 2, and thereby the final Semiconductor devices as products are fully improved.
（発明の効果）
本発明の半導体素子収納用バッケージによれば、半導体
素子を収容するための絶縁容器をフォルステライト質焼
結体もしくはジルコニア質焼結体で、外部リード端子を
熱膨張係数９５乃至１１０ ×１０−７／℃、導電率１
２Ｘ（ＩＡＣＳ）以上の金属で、ガラス部材を酸化鉛７
０．０乃至９０．０Ｗｔχ、酸化ホウ素１０．０乃至１
５．０れχ、シリカ０．５乃至３．０Ｗｔχ、アルミナ
０．５乃至３．Ｏ Ｗｔχ、酸化亜鉛及び酸化ビスマス
３．０Ｗｔ％以下から或るガラス戒分にフィラーとして
のチタン酸鉛、β−ユークリプタイト、コージライト、
ジルコン、酸化錫、ウイレマイト及びチタン酸錫の少な
くとも１種を１５Ｖｏｌχ以下添加したガラスで形威し
たことから外部リード端子の信号伝搬速度を極めて速い
ものとなすことができ、絶縁容器内に収容した半導体素
子を高速駆動させたとしても半導体素子と外部電気回路
との間における信号の出し入れを安定、且つ確実となす
ことが可能となる。(Effects of the Invention) According to the semiconductor device storage package of the present invention, the insulating container for accommodating the semiconductor device is made of a forsterite sintered body or a zirconia sintered body, and the external lead terminal has a thermal expansion coefficient of 95 to 95. 110 ×10-7/℃, conductivity 1
2X (IACS) or higher metal, glass parts with lead oxide 7
0.0 to 90.0 Wtχ, boron oxide 10.0 to 1
5.0Wtχ, silica 0.5 to 3.0Wtχ, alumina 0.5 to 3.0Wtχ. O Wtχ, zinc oxide and bismuth oxide from 3.0 Wt% or less to lead titanate, β-eucryptite, cordierite, as a filler in certain glass components.
Since it is made of glass to which at least 15 Volχ or less of at least one of zircon, tin oxide, willemite, and tin titanate is added, the signal propagation speed of the external lead terminal can be made extremely fast, and the semiconductor housed in an insulating container can be Even if the device is driven at high speed, signals can be sent in and out between the semiconductor device and the external electric circuit stably and reliably.
また外部リード端子の線幅が細くなったとしても外部リ
ード端子の電気抵抗を低く抑えることができ、その結果
、外部リード端子における信号の減衰を極小として内部
に収容する半導体素子に外部電気回路から供給される電
気信号を正確に入力することができる。In addition, even if the line width of the external lead terminal becomes thinner, the electrical resistance of the external lead terminal can be kept low, and as a result, the signal attenuation at the external lead terminal is minimized, and the external electrical circuit is connected to the semiconductor element housed inside. The supplied electrical signal can be input accurately.
更に前記外部リード端子はその熱膨張係数が絶縁基体、
蓋体及び封止用ガラス部材の各々の熱膨張係数と近似し
、絶縁基体と蓋体との間に外部リード端子を挟み、各々
を封止用ガラス部材で取着接合したとしても絶縁基体及
び蓋体と封止用ガラス部材との間、外部リード端子と封
止用ガラス部材との間のいずれにも熱膨張係数の相違に
起因する熱応力は発生せず、すべてを強固に取着接合す
ることも可能となる。Furthermore, the external lead terminal has a coefficient of thermal expansion that is equal to that of the insulating base,
The coefficient of thermal expansion is similar to that of each of the lid body and the sealing glass member, and even if an external lead terminal is sandwiched between the insulating base body and the lid body and each is attached and bonded with the sealing glass member, the insulating base and No thermal stress is generated between the lid and the sealing glass member, nor between the external lead terminal and the sealing glass member due to differences in thermal expansion coefficients, and all are firmly attached and bonded. It is also possible to do so.
第１図は本発明の半導体素子収納用パッケージの一実施
例を示す断面図、第２図は第１図に示すパッケージのｗ
ＡＩ！基体上面より見た平面図である。
ｌ ・・絶縁基体 ２ ・・蓋体
３ ・・絶縁容器
５ ・・外部リード端子
６ ・・封止用ガラス部材FIG. 1 is a sectional view showing an embodiment of the semiconductor element storage package of the present invention, and FIG. 2 is a cross-sectional view of the package shown in FIG. 1.
AI! FIG. 3 is a plan view seen from the top surface of the base. l...Insulating base 2...Lid 3...Insulating container 5...External lead terminal 6...Glass member for sealing
Claims (1)
容器に外部リード端子をガラス部材を介して取着して成
る半導体素子収納用パッケージにおいて、前記絶縁容器
をフォルステライト質焼結体もしくはジルコニア質焼結
体で、外部リード端子を熱膨張係数９５乃至１１０×１
０＾−＾７／℃、導電率１２％（ＩＡＣＳ）以上の金属
で、ガラス部材を酸化鉛７０．０乃至９０．０Ｗｔ％、
酸化ホウ素１０．０乃至１５．０Ｗｔ％、シリカ０．５
乃至３．０Ｗｔ％、アルミナ０．５乃至３．０Ｗｔ％、
酸化亜鉛及び酸化ビスマス３．０Ｗｔ％以下から成るガ
ラス成分にフィラーとしてのチタン酸鉛、β−ユークリ
プタイト、コージライト、ジルコン、酸化錫、ウイレマ
イト及びチタン酸錫の少なくとも１種を１５Ｖｏｌ％以
下添加したガラスで形成したことを特徴とする半導体素
子収納用パッケージ。In a semiconductor device storage package in which external lead terminals are attached via a glass member to an insulating container having a cavity for accommodating a semiconductor device inside, the insulating container is made of a forsterite sintered body or a zirconia sintered body. The external lead terminal is a sintered body with a thermal expansion coefficient of 95 to 110 x 1.
0^-^7/℃, metal with electrical conductivity of 12% or more (IACS), glass member with lead oxide of 70.0 to 90.0 Wt%,
Boron oxide 10.0 to 15.0 Wt%, silica 0.5
3.0 Wt%, alumina 0.5 to 3.0 Wt%,
At least one of lead titanate, β-eucryptite, cordierite, zircon, tin oxide, willemite, and tin titanate is added as a filler to a glass component consisting of zinc oxide and bismuth oxide of 3.0 wt% or less at a volume of 15 vol% or less. A semiconductor device storage package characterized by being made of glass.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30861589A JP2691310B2 (en) | 1989-11-27 | 1989-11-27 | Package for storing semiconductor elements |
| US07/574,472 US5168126A (en) | 1989-08-25 | 1990-08-27 | Container package for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30861589A JP2691310B2 (en) | 1989-11-27 | 1989-11-27 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03167842A true JPH03167842A (en) | 1991-07-19 |
| JP2691310B2 JP2691310B2 (en) | 1997-12-17 |
Family
ID=17983182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30861589A Expired - Fee Related JP2691310B2 (en) | 1989-08-25 | 1989-11-27 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2691310B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113894461A (en) * | 2021-10-12 | 2022-01-07 | 广州汉源新材料股份有限公司 | Glass-based sealing composition, sealing slurry, and preparation method and application thereof |
-
1989
- 1989-11-27 JP JP30861589A patent/JP2691310B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113894461A (en) * | 2021-10-12 | 2022-01-07 | 广州汉源新材料股份有限公司 | Glass-based sealing composition, sealing slurry, and preparation method and application thereof |
| CN113894461B (en) * | 2021-10-12 | 2023-01-03 | 广州汉源新材料股份有限公司 | Glass-based sealing composition, sealing slurry, and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2691310B2 (en) | 1997-12-17 |
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