JPH0312770B2 - - Google Patents

Info

Publication number: JPH0312770B2
Authority: JP; Japan
Prior art keywords: layer; alinas; type; impurities; gainas
Prior art date: 1986-10-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP25418186A

Other languages

English (en)

Japanese (ja)

Other versions

JPS63107173A (ja

Inventor

Goro Sasaki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Electric Industries Ltd

Original Assignee

Sumitomo Electric Industries Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-10-24

Filing date

1986-10-24

Publication date

1991-02-21

1986-10-24 Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd

1986-10-24 Priority to JP25418186A priority Critical patent/JPS63107173A/ja

1987-10-21 Priority to EP87115444A priority patent/EP0264932A1/en

1987-10-23 Priority to CA000550121A priority patent/CA1261977A/en

1987-10-23 Priority to KR1019870011772A priority patent/KR900008154B1/ko

1988-05-12 Publication of JPS63107173A publication Critical patent/JPS63107173A/ja

1991-02-21 Publication of JPH0312770B2 publication Critical patent/JPH0312770B2/ja

Status Granted legal-status Critical Current

Links

239000012535 impurity Substances 0.000 claims description 25
239000000758 substrate Substances 0.000 claims description 25
229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 15
230000005669 field effect Effects 0.000 claims description 11
GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 17
239000013078 crystal Substances 0.000 description 3
238000000034 method Methods 0.000 description 3
230000003321 amplification Effects 0.000 description 2
229910052785 arsenic Inorganic materials 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000000463 material Substances 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
238000003199 nucleic acid amplification method Methods 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
229910001020 Au alloy Inorganic materials 0.000 description 1
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
229910000927 Ge alloy Inorganic materials 0.000 description 1
229910008812 WSi Inorganic materials 0.000 description 1
238000005275 alloying Methods 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
-1 aluminum-indium-arsenic Chemical compound 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000000151 deposition Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
150000004678 hydrides Chemical class 0.000 description 1
229910052749 magnesium Inorganic materials 0.000 description 1
229910052748 manganese Inorganic materials 0.000 description 1
239000000203 mixture Substances 0.000 description 1
230000005693 optoelectronics Effects 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Junction Field-Effect Transistors (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

JP25418186A 1986-10-24 1986-10-24 電界効果トランジスタ Granted JPS63107173A (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP25418186A JPS63107173A (ja)	1986-10-24	1986-10-24	電界効果トランジスタ
EP87115444A EP0264932A1 (en)	1986-10-24	1987-10-21	Field effect transistor
CA000550121A CA1261977A (en)	1986-10-24	1987-10-23	Field effect transistor
KR1019870011772A KR900008154B1 (ko)	1986-10-24	1987-10-23	전계효과 트랜지스터

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP25418186A JPS63107173A (ja)	1986-10-24	1986-10-24	電界効果トランジスタ

Publications (2)

Publication Number	Publication Date
JPS63107173A JPS63107173A (ja)	1988-05-12
JPH0312770B2 true JPH0312770B2 (ko)	1991-02-21

Family

ID=17261356

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP25418186A Granted JPS63107173A (ja)	1986-10-24	1986-10-24	電界効果トランジスタ

Country Status (1)

Country	Link
JP (1)	JPS63107173A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0230149A (ja) *	1988-07-20	1990-01-31	Sanyo Electric Co Ltd	ヘテロ接合電界効果トランジスタ
JP2529109Y2 (ja) *	1989-12-13	1997-03-19	株式会社シマノ	両軸受リール

1986
- 1986-10-24 JP JP25418186A patent/JPS63107173A/ja active Granted

Also Published As

Publication number	Publication date
JPS63107173A (ja)	1988-05-12

Publication	Publication Date	Title
JPH0324782B2 (ko)	1991-04-04
KR920010671B1 (ko)	1992-12-12	반도체장치
US5381027A (en)	1995-01-10	Semiconductor device having a heterojunction and a two dimensional gas as an active layer
JPS6356710B2 (ko)	1988-11-09
JP2758803B2 (ja)	1998-05-28	電界効果トランジスタ
EP0240567B1 (en)	1992-10-07	Semiconductor device
US5258631A (en)	1993-11-02	Semiconductor device having a two-dimensional electron gas as an active layer
JPH0312770B2 (ko)	1991-02-21
JPS61147577A (ja)	1986-07-05	相補型半導体装置
JPS6242569A (ja)	1987-02-24	電界効果型トランジスタ
JPH0260224B2 (ko)	1990-12-14
JP3119207B2 (ja)	2000-12-18	共鳴トンネルトランジスタおよびその製造方法
JP2800770B2 (ja)	1998-09-21	電界効果トランジスタ及びその製造方法
JP2980630B2 (ja)	1999-11-22	化合物半導体装置
JPS62298181A (ja)	1987-12-25	半導体装置
KR900008154B1 (ko)	1990-11-03	전계효과 트랜지스터
JPH02111073A (ja)	1990-04-24	絶縁ゲート電界効果トランジスタおよびその集積回路装置
KR900007049B1 (ko)	1990-09-27	전계효과트랜지스터
JPH0793323B2 (ja)	1995-10-09	電界効果トランジスタ
JP2695832B2 (ja)	1998-01-14	ヘテロ接合型電界効果トランジスタ
JPS60136380A (ja)	1985-07-19	半導体装置
JP2890885B2 (ja)	1999-05-17	半導体装置およびその製造方法
JPS61171170A (ja)	1986-08-01	半導体装置
JP2834172B2 (ja)	1998-12-09	電界効果トランジスタ
JPH10107274A (ja)	1998-04-24	トンネルトランジスタ及びその製造方法