JPH023308B2 - - Google Patents

Info

Publication number: JPH023308B2
Authority: JP; Japan
Prior art keywords: nitride film; silicon nitride; film; silicon; layer
Prior art date: 1982-02-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP57030772A

Other languages

English (en)

Japanese (ja)

Other versions

JPS58147070A (ja

Inventor

Tadashi Nishimura

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-02-25

Filing date

1982-02-25

Publication date

1990-01-23

1982-02-25 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1982-02-25 Priority to JP3077282A priority Critical patent/JPS58147070A/ja

1983-09-01 Publication of JPS58147070A publication Critical patent/JPS58147070A/ja

1990-01-23 Publication of JPH023308B2 publication Critical patent/JPH023308B2/ja

Status Granted legal-status Critical Current

Links

229910052581 Si3N4 Inorganic materials 0.000 claims description 23
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
229910021417 amorphous silicon Inorganic materials 0.000 claims description 14
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
229910052760 oxygen Inorganic materials 0.000 claims description 11
239000001301 oxygen Substances 0.000 claims description 11
239000000758 substrate Substances 0.000 claims description 10
238000000034 method Methods 0.000 claims description 8
238000004519 manufacturing process Methods 0.000 claims description 6
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
230000001590 oxidative effect Effects 0.000 claims description 5
238000005229 chemical vapour deposition Methods 0.000 claims description 4
230000005669 field effect Effects 0.000 claims description 3
230000001678 irradiating effect Effects 0.000 claims description 3
239000010408 film Substances 0.000 description 48
150000004767 nitrides Chemical class 0.000 description 12
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
229910052814 silicon oxide Inorganic materials 0.000 description 8
239000011521 glass Substances 0.000 description 6
229910004298 SiO 2 Inorganic materials 0.000 description 4
239000011651 chromium Substances 0.000 description 4
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 3
230000000694 effects Effects 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
239000000969 carrier Substances 0.000 description 2
238000000206 photolithography Methods 0.000 description 2
229920005591 polysilicon Polymers 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
239000010409 thin film Substances 0.000 description 2
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000005684 electric field Effects 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
230000007774 longterm Effects 0.000 description 1
238000005268 plasma chemical vapour deposition Methods 0.000 description 1
229910052708 sodium Inorganic materials 0.000 description 1
239000011734 sodium Substances 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Bipolar Transistors (AREA)

JP3077282A 1982-02-25 1982-02-25 電界効果トランジスタの製造方法 Granted JPS58147070A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP3077282A JPS58147070A (ja)	1982-02-25	1982-02-25	電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP3077282A JPS58147070A (ja)	1982-02-25	1982-02-25	電界効果トランジスタの製造方法

Publications (2)

Publication Number	Publication Date
JPS58147070A JPS58147070A (ja)	1983-09-01
JPH023308B2 true JPH023308B2 (ko)	1990-01-23

Family

ID=12312966

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP3077282A Granted JPS58147070A (ja)	1982-02-25	1982-02-25	電界効果トランジスタの製造方法

Country Status (1)

Country	Link
JP (1)	JPS58147070A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2003086805A (ja) *	2001-09-07	2003-03-20	Ricoh Co Ltd	薄膜トランジスタ、電気絶縁膜及びそれらの製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60170972A (ja) *	1984-02-15	1985-09-04	Sony Corp	薄膜半導体装置
JPS61105863A (ja) *	1984-10-29	1986-05-23	Seiko Epson Corp	半導体画像記憶素子
JPS6240773A (ja) *	1985-08-17	1987-02-21	Sanyo Electric Co Ltd	薄膜トランジスタ及びその製造方法
JPS6319876A (ja) *	1986-07-11	1988-01-27	Fuji Xerox Co Ltd	薄膜トランジスタ装置
JPS644070A (en) *	1987-06-26	1989-01-09	Hitachi Ltd	Thin film transistor and manufacture thereof
JPH03237790A (ja) *	1990-02-15	1991-10-23	Shibaura Eng Works Co Ltd	電子回路部品の実装方法
JPH0637317A (ja) *	1990-04-11	1994-02-10	General Motors Corp <Gm>	薄膜トランジスタおよびその製造方法
JPH07118527B2 (ja) *	1990-10-18	1995-12-18	富士ゼロックス株式会社	イメージセンサの製造方法
US8344378B2 (en) *	2009-06-26	2013-01-01	Semiconductor Energy Laboratory Co., Ltd.	Thin film transistor and method for manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS567480A (en) *	1979-06-29	1981-01-26	Mitsubishi Electric Corp	Film transistor
JPS56111258A (en) *	1980-01-07	1981-09-02	Chiyou Lsi Gijutsu Kenkyu Kumiai	Thin film semiconductor device
JPS577972A (en) *	1980-06-19	1982-01-16	Nec Corp	Insulated gate type thin film transistor

1982
- 1982-02-25 JP JP3077282A patent/JPS58147070A/ja active Granted

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS567480A (en) *	1979-06-29	1981-01-26	Mitsubishi Electric Corp	Film transistor
JPS56111258A (en) *	1980-01-07	1981-09-02	Chiyou Lsi Gijutsu Kenkyu Kumiai	Thin film semiconductor device
JPS577972A (en) *	1980-06-19	1982-01-16	Nec Corp	Insulated gate type thin film transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2003086805A (ja) *	2001-09-07	2003-03-20	Ricoh Co Ltd	薄膜トランジスタ、電気絶縁膜及びそれらの製造方法

Also Published As

Publication number	Publication date
JPS58147070A (ja)	1983-09-01

Publication	Publication Date	Title
US5736750A (en)	1998-04-07	MIS semiconductor device and method of fabricating the same
US4633284A (en)	1986-12-30	Thin film transistor having an annealed gate oxide and method of making same
JPH0465548B2 (ko)	1992-10-20
JPH0451071B2 (ko)	1992-08-18
JPH023308B2 (ko)	1990-01-23
KR940008227B1 (ko)	1994-09-08	박막 트랜지스터 제조방법
JPH0637317A (ja)	1994-02-10	薄膜トランジスタおよびその製造方法
JPS60142566A (ja)	1985-07-27	絶縁ゲ−ト薄膜トランジスタ及びその製造方法
JPS60177676A (ja)	1985-09-11	薄膜トランジスタ素子およびその製造方法
JP3431653B2 (ja)	2003-07-28	Ｍｉｓ型半導体装置の作製方法
JPH06216156A (ja)	1994-08-05	Ｍｉｓ型半導体装置とその作製方法
JPH07211921A (ja)	1995-08-11	半導体素子の製造方法
JPH04240733A (ja)	1992-08-28	薄膜トランジスタの製造方法
JPH0740607B2 (ja)	1995-05-01	薄膜トランジスタの製造方法
JPS59189676A (ja)	1984-10-27	半導体装置
JP2587570B2 (ja)	1997-03-05	多結晶シリコン薄膜トランジスタおよびその製造方法
JPS63140580A (ja)	1988-06-13	薄膜トランジスタ
JPH0142147B2 (ko)	1989-09-11
JPH05291294A (ja)	1993-11-05	薄膜トランジスタの製造方法
JPS61268068A (ja)	1986-11-27	薄膜トランジスタとその製法
JPH05299656A (ja)	1993-11-12	半導体装置の製造方法
KR930004347B1 (ko)	1993-05-26	불휘발성 반도체 메모리 소자의 제조방법
JPH05326954A (ja)	1993-12-10	薄膜トランジスタおよびその製造方法
KR940003093A (ko)	1994-02-19	반도체 장치의 박막 트랜지스터 제조방법
JPH02207536A (ja)	1990-08-17	半導体装置

JPH023308B2 - - Google Patents

Info

Links

Classifications

Landscapes

Priority Applications (1)

Applications Claiming Priority (1)

Publications (2)

Family

ID=12312966

Family Applications (1)

Country Status (1)

Cited By (1)

Families Citing this family (9)

Citations (3)

Patent Citations (3)

Cited By (1)

Also Published As

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