JP7302658B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7302658B2 JP7302658B2 JP2021528500A JP2021528500A JP7302658B2 JP 7302658 B2 JP7302658 B2 JP 7302658B2 JP 2021528500 A JP2021528500 A JP 2021528500A JP 2021528500 A JP2021528500 A JP 2021528500A JP 7302658 B2 JP7302658 B2 JP 7302658B2
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- 239000004065 semiconductor Substances 0.000 title claims description 180
- 239000004020 conductor Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 30
- 239000002070 nanowire Substances 0.000 claims description 11
- 238000010586 diagram Methods 0.000 description 38
- 238000002955 isolation Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 8
- 239000010941 cobalt Substances 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
先ず、第1の実施形態について説明する。図1は、第1の実施形態に係る半導体装置の構成を示す回路図である。図2は、図1に示す回路図の等価回路図である。
次に、第2の実施形態について説明する。第2の実施形態は、主に、電源線の構成と、疑似NチャネルMOSトランジスタに含まれる半導体領域の構成との点で第1の実施形態と相違する。図8及び図9は、第2の実施形態における疑似CFET20の平面構成を示す模式図である。図8は、主として、疑似NチャネルMOSトランジスタ21Nのレイアウトを示す。図9は、主として、疑似PチャネルMOSトランジスタ21Pのレイアウトを示す。図8及び図9の両方に示す構造物を除き、図9に示す構造物は、図8に示す構造物の上方に位置する。図10及び図11は、第2の実施形態における疑似CFET20を示す断面図である。図10は、図8及び図9中のX12-X22線に沿った断面図に相当する。図11は、図8及び図9中のY13-Y23線に沿った断面図に相当する。
次に、第3の実施形態について説明する。第3の実施形態は、主に、疑似CFETの規模の点で第1の実施形態と相違する。図13及び図14は、第3の実施形態における疑似CFET20の平面構成を示す模式図である。図13は、主として、疑似NチャネルMOSトランジスタ21Nのレイアウトを示す。図14は、主として、疑似PチャネルMOSトランジスタ21Pのレイアウトを示す。図13及び図14の両方に示す構造物を除き、図14に示す構造物は、図13に示す構造物の上方に位置する。
次に、第4の実施形態について説明する。第4の実施形態は、主に、疑似CFETと電源線との接続関係の点で第1の実施形態と相違する。図15は、第4の実施形態に係る半導体装置の構成を示す回路図である。図16は、図15に示す回路図の等価回路図である。
次に、第5の実施形態について説明する。第5の実施形態は、主に、疑似CFETと電源線との接続関係の点で第1の実施形態と相違する。図20は、第5の実施形態に係る半導体装置の構成を示す回路図である。図21は、図20に示す回路図の等価回路図である。
次に、第6の実施形態について説明する。図25は、第6の実施形態に係る半導体装置の構成を示す回路図である。
11:入力端子
12:出力端子
20CR、20CP:キャパシタ
20R:抵抗体
21N、72N:疑似NチャネルMOSトランジスタ
21P、72P:疑似PチャネルMOSトランジスタ
61、63:インバータ
62:遅延調整部
71N、73N:NチャネルMOSトランジスタ
71P、73P:PチャネルMOSトランジスタ
181、681、683:フィン
181N、281N、681N、683N:N型領域
182、281、682、684:半導体領域
182P、682P、684P:P型領域
Claims (12)
- 基板と、
前記基板上に形成された第1の半導体領域と、
前記基板上に形成され、前記第1の半導体領域に電気的に接続された第2の半導体領域と、
前記基板上に形成され、前記第1の半導体領域と前記第2の半導体領域との間に位置する第3の半導体領域と、
前記第1の半導体領域上に形成された第4の半導体領域と、
前記第2の半導体領域上に形成され、前記第4の半導体領域に電気的に接続された第5の半導体領域と、
前記第3の半導体領域上に形成され、前記第4の半導体領域と前記第5の半導体領域との間に位置する第6の半導体領域と、
前記第1の半導体領域と前記第2の半導体領域との間、及び、前記第4の半導体領域と前記第5の半導体領域との間に形成され、前記第3の半導体領域及び前記第6の半導体領域を覆う導電体を有する抵抗体と、
前記第1の半導体領域及び前記第2の半導体領域が電気的に接続された第1の電源線と、
前記第4の半導体領域及び前記第5の半導体領域が電気的に接続された第2の電源線と、
を有し、
前記第1の半導体領域及び前記第2の半導体領域は第1の導電型を有し、
前記第4の半導体領域及び前記第5の半導体領域は前記第1の導電型とは異なる第2の導電型を有することを特徴とする半導体装置。 - 前記抵抗体は、前記第1の半導体領域と前記第2の半導体領域とが並ぶ方向に平面視で垂直な方向に延在することを特徴とする請求項1に記載の半導体装置。
- 前記第1の電源線に接地電位が供給され、前記第2の電源線に前記接地電位より高い電源電位が供給される場合、前記第1の導電型はN型であり、前記第2の導電型はP型であり、
前記第2の電源線に接地電位が供給され、前記第1の電源線に前記接地電位より高い電源電位が供給される場合、前記第2の導電型はN型であり、前記第1の導電型はP型であることを特徴とする請求項1又は2に記載の半導体装置。 - 前記第1の電源線に接地電位が供給され、前記第2の電源線に前記接地電位より高い電源電位が供給される場合、前記第1の導電型はP型であり、前記第2の導電型はN型であり、
前記第2の電源線に接地電位が供給され、前記第1の電源線に前記接地電位より高い電源電位が供給される場合、前記第2の導電型はP型であり、前記第1の導電型はN型であることを特徴とする請求項1又は2に記載の半導体装置。 - 前記第1の電源線及び前記第2の電源線は、前記基板に形成されていることを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置。
- 前記第1の電源線と前記第1の半導体領域とを電気的に接続する第1のローカル配線と、
前記第1の電源線と前記第2の半導体領域とを電気的に接続する第2のローカル配線と、
前記第2の電源線と前記第4の半導体領域とを電気的に接続する第3のローカル配線と、
前記第2の電源線と前記第5の半導体領域とを電気的に接続する第4のローカル配線と、
を有することを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。 - 前記第1の半導体領域、前記第2の半導体領域、前記第3の半導体領域、前記第4の半導体領域、前記第5の半導体領域、前記第6の半導体領域及び前記導電体を含む基本構造を複数有し、
複数の前記基本構造は、前記抵抗体が延びる方向に平面視で垂直な方向に並んで配置され、
隣り合う前記基本構造の間で前記抵抗体が電気的に直列に接続されていることを特徴とする請求項1乃至6のいずれか1項に記載の半導体装置。 - 前記第1の半導体領域、前記第2の半導体領域及び前記第3の半導体領域は、前記基板上に形成されたフィンに形成され、
前記第4の半導体領域、前記第5の半導体領域及び前記第6の半導体領域は、前記フィンの上方に形成されたナノワイヤに形成されていることを特徴とする請求項1乃至7のいずれか1項に記載の半導体装置。 - 基板と、
前記基板上に形成された第1の半導体領域及び第2の半導体領域と、
前記第1の半導体領域上に形成された第3の半導体領域と、
前記第2の半導体領域上に形成された第4の半導体領域と、
前記第1の半導体領域と前記第2の半導体領域との間、及び、前記第3の半導体領域と前記第4の半導体領域との間に形成された導電体を有する抵抗体と、
を有し、
前記第1の半導体領域、前記第2の半導体領域、前記第3の半導体領域及び前記第4の半導体領域は、電気的にフローティングであることを特徴とする半導体装置。 - 前記抵抗体に、前記第1の半導体領域と前記第2の半導体領域とが並ぶ方向に垂直な方向に電流が流れることを特徴とする請求項9に記載の半導体装置。
- 前記第1の半導体領域、前記第2の半導体領域、前記第3の半導体領域、前記第4の半導体領域及び前記導電体を含む基本構造を複数有し、
複数の前記基本構造は、前記導電体が延びる方向に垂直な方向に並んで配置され、
隣り合う前記基本構造の間で前記導電体が電気的に直列に接続されていることを特徴とする請求項9又は10に記載の半導体装置。 - 前記第1の半導体領域及び前記第2の半導体領域は、前記基板上に形成されたフィンに形成され、
前記第3の半導体領域及び前記第4の半導体領域は、前記フィンの上方に形成されたナノワイヤに形成されていることを特徴とする請求項9乃至11のいずれか1項に記載の半導体装置。
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