JP7168615B2 - 光電子部品の製造方法、および光電子部品 - Google Patents
光電子部品の製造方法、および光電子部品 Download PDFInfo
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- JP7168615B2 JP7168615B2 JP2020120126A JP2020120126A JP7168615B2 JP 7168615 B2 JP7168615 B2 JP 7168615B2 JP 2020120126 A JP2020120126 A JP 2020120126A JP 2020120126 A JP2020120126 A JP 2020120126A JP 7168615 B2 JP7168615 B2 JP 7168615B2
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- polyorganosiloxane
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- 230000005693 optoelectronics Effects 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 42
- 239000011347 resin Substances 0.000 claims description 41
- 229920005989 resin Polymers 0.000 claims description 41
- 230000005855 radiation Effects 0.000 claims description 25
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 24
- 238000004132 cross linking Methods 0.000 claims description 19
- 239000002223 garnet Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000005266 casting Methods 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- 238000007259 addition reaction Methods 0.000 claims description 3
- 230000007062 hydrolysis Effects 0.000 claims description 3
- 238000006460 hydrolysis reaction Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000000748 compression moulding Methods 0.000 claims description 2
- 238000009833 condensation Methods 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims description 2
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000010345 tape casting Methods 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- 238000002411 thermogravimetry Methods 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- -1 nitride compound Chemical class 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000000962 organic group Chemical class 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- CIUQDSCDWFSTQR-UHFFFAOYSA-N [C]1=CC=CC=C1 Chemical compound [C]1=CC=CC=C1 CIUQDSCDWFSTQR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- WCYWZMWISLQXQU-UHFFFAOYSA-N methyl Chemical group [CH3] WCYWZMWISLQXQU-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000012855 volatile organic compound Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
Description
A) 1次放射線の放出が可能な半導体を提供するステップ、
B) アルコキシ官能化ポリオルガノシロキサン樹脂、特にメトキシ官能化ポリオルガノシロキサン樹脂、を提供するステップ、および
C) アルコキシ官能化ポリオルガノシロキサン樹脂、特にメトキシ官能化ポリオルガノシロキサン樹脂を架橋して、3次元架橋ポリオルガノシロキサンを形成するステップを含み、3次元架橋ポリオルガノシロキサンの有機分が25質量%以下、即ち最大で25質量%である、方法である。
1 アルコキシ官能化ポリオルガノシロキサン樹脂
2 基板またはキャリア
3 半導体
4 架橋ポリオルガノシロキサン
5 レンズ
6 リフレクタ
7 架橋
8 1次放射線の放出
9 ボリュームキャスト
10 2次放射線の放出
11 変換体素子
12 放射主面
13 蛍光体
14 リセス部
21 ハウジング
Claims (13)
- A) 1次放射線(8)の放出が可能な半導体(3)を提供するステップ、
B) アルコキシ官能化ポリオルガノシロキサン樹脂(1)を提供するステップ、および
C) 前記アルコキシ官能化ポリオルガノシロキサン樹脂(1)を架橋して、3次元架橋ポリオルガノシロキサン(4)を形成するステップ
を含み、前記3次元架橋ポリオルガノシロキサン(4)の有機分が13質量%以上18質量%以下であり、且つ前記3次元架橋ポリオルガノシロキサン(4)が細かいメッシュ状であり、且つ細かいメッシュ状の3次元SiO網目構造を形成し、
前記アルコキシ官能化ポリオルガノシロキサン樹脂(1)が、アルコキシ含量が17±4質量%のアルコキシ官能化メチルフェニルシリコーン樹脂またはアルコキシ含量が35±4質量%のアルコキシ官能化メチルシリコーン樹脂である、光電子部品(100)を製造する方法。 - ステップC)での前記架橋が縮合架橋である、請求項1に記載の方法。
- ステップC)での前記架橋が付加反応ではない、請求項2に記載の方法。
- 前記3次元架橋ポリオルガノシロキサン(4)のショアA硬度が70を超える、請求項1~3のいずれか一項に記載の方法。
- 前記3次元架橋ポリオルガノシロキサン(4)が、前記半導体(3)のビーム経路内に配置される、請求項1~4のいずれか一項に記載の方法。
- 下記ステップD)をさらに含む、請求項1~5のいずれか一項に記載の方法。
D) 前記3次元架橋ポリオルガノシロキサン(4)を、変換体素子(11)として、前記半導体(3)の放射主面(12)上に塗布するステップであって、前記変換体素子(11)が、前記1次放射線(8)を2次放射線(10)に変換する少なくとも1種の蛍光体(13)を含むステップ。 - 前記蛍光体が、アルミニウムガーネット、アルカリ土類窒化物、またはこれらの組合せであり、前記蛍光体の含量が、前記3次元架橋ポリオルガノシロキサン(4)の少なくとも50質量%を占める、請求項6に記載の方法。
- 下記ステップE)をさらに含む、請求項6に記載の方法。
E) 前記光電子部品(100)のハウジングのリセス部(14)内の少なくとも複数領域にボリュームキャスト(9)として前記3次元架橋ポリオルガノシロキサン(4)を配置し、前記半導体(3)が、前記3次元架橋ポリオルガノシロキサン(4)によって確実に取り囲まれかつその断面の厚さが少なくとも250μmであり、前記蛍光体(13)がアルミニウムガーネット、アルカリ土類窒化物、またはこれらの組合せであり、前記蛍光体(13)の含量が、前記3次元架橋ポリオルガノシロキサン(4)の25質量%以下を占める、ステップ。 - 前記3次元架橋ポリオルガノシロキサン(4)が、ハウジング(21)またはレンズ(5)として形成される、請求項1~8のいずれか一項に記載の方法。
- ステップB)が、キャスティング、ドロップキャスティング、スピンコーティング、ドクターブレーディング、スプレーコーティング、または圧縮成型によって実施される、請求項1~9のいずれか一項に記載の方法。
- ステップC)において、前記架橋(7)を温度および/または湿度またはUV放射を用いて実施する、請求項1~10のいずれか一項に記載の方法。
- 前記架橋(7)が、ステップC)において室温以上220℃以下で実施される、請求項11に記載の方法。
- 前記アルコキシ官能化ポリオルガノシロキサン樹脂(1)が、前駆体の加水分解によって作製される、請求項1~12のいずれか一項に記載の方法。
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WO2018002334A1 (en) | 2016-06-30 | 2018-01-04 | Osram Opto Semiconductors Gmbh | Wavelength converter having a polysiloxane material, method of making, and solid state lighting device containing same |
US10570333B2 (en) * | 2017-05-23 | 2020-02-25 | Osram Opto Semiconductors Gmbh | Wavelength conversion element, light emitting device and method for producing a wavelength conversion element |
US10727379B2 (en) | 2018-02-16 | 2020-07-28 | Osram Opto Semiconductors Gmbh | Methods for producing a conversion element and an optoelectronic component |
US10590339B2 (en) | 2018-05-16 | 2020-03-17 | Osram Opto Semiconductors Gmbh | Method for producing a converter element, converter element and light emitting device |
US11552228B2 (en) | 2018-08-17 | 2023-01-10 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
US11349051B2 (en) | 2019-05-10 | 2022-05-31 | Osram Opto Semiconductors Gmbh | Optoelectronic device and method of producing an optoelectronic device |
DE102020206897A1 (de) | 2020-06-03 | 2021-12-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
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US20190123248A1 (en) | 2019-04-25 |
DE112017002058A5 (de) | 2019-01-03 |
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