WO2009025017A1 - 半導体光装置及び透明光学部材 - Google Patents
半導体光装置及び透明光学部材 Download PDFInfo
- Publication number
- WO2009025017A1 WO2009025017A1 PCT/JP2007/066030 JP2007066030W WO2009025017A1 WO 2009025017 A1 WO2009025017 A1 WO 2009025017A1 JP 2007066030 W JP2007066030 W JP 2007066030W WO 2009025017 A1 WO2009025017 A1 WO 2009025017A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- photodevice
- optical member
- transparent optical
- sealant
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 230000003287 optical effect Effects 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000000565 sealant Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 230000007062 hydrolysis Effects 0.000 abstract 1
- 238000006460 hydrolysis reaction Methods 0.000 abstract 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 1
- 150000003377 silicon compounds Chemical class 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Silicon Polymers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Semiconductor Lasers (AREA)
Abstract
半導体発光素子または半導体受光素子を封止材で封止した半導体光装置において、封止材が劣化し難くまた吸水率が低い半導体光装置を提供する。 (AR1R2SiOSiO1.5)n(BR3R4SiOSiO1.5)p(HOSiO1.5)m-n-p (式中、Aは加水分解性を有する基、Bは置換又は非置換のアルキル基又は水素、R1,R2,R3,R4は各々独立にメチル基又はフェニル基を表し、mは6,8,10,12から選ばれた数、nは2~mの整数、pは0~m-nの整数を表す) で表されるかご型シルセスキオキサン化合物、又はこの化合物が部分的に加水分解してなるかご型シルセスキオキサン化合物の部分加水分解物を含有するケイ素化合物で、半導体発光素子又は半導体受光素子を封止する。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/066030 WO2009025017A1 (ja) | 2007-08-17 | 2007-08-17 | 半導体光装置及び透明光学部材 |
JP2009528891A JP5211059B2 (ja) | 2007-08-17 | 2007-08-17 | 半導体光装置及び透明光学部材 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/066030 WO2009025017A1 (ja) | 2007-08-17 | 2007-08-17 | 半導体光装置及び透明光学部材 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009025017A1 true WO2009025017A1 (ja) | 2009-02-26 |
Family
ID=40377928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/066030 WO2009025017A1 (ja) | 2007-08-17 | 2007-08-17 | 半導体光装置及び透明光学部材 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5211059B2 (ja) |
WO (1) | WO2009025017A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007246880A (ja) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | 半導体光装置及び透明光学部材 |
JP2012007042A (ja) * | 2010-06-23 | 2012-01-12 | Kaneka Corp | 多面体骨格を有するアンモニウムオリゴシリケート、およびポリシロキサン化合物の製造方法 |
US20130099395A1 (en) * | 2011-10-25 | 2013-04-25 | Haruka ONA | Silicone resin composition, encapsulating layer, reflector, and optical semiconductor device |
JPWO2012090961A1 (ja) * | 2010-12-28 | 2014-06-05 | コニカミノルタ株式会社 | 発光装置、発光装置の製造方法、及び、塗布液 |
JP2014208615A (ja) * | 2013-03-26 | 2014-11-06 | Jnc株式会社 | アルコキシシリル基含有シルセスキオキサンおよびその組成物 |
WO2015115340A1 (ja) * | 2014-01-31 | 2015-08-06 | 住友化学株式会社 | Uv-led用ポリシルセスキオキサン系封止材組成物及びそのための溶媒の使用 |
WO2017079911A1 (en) * | 2015-11-11 | 2017-05-18 | Dow Global Technologies Llc | Light emitting nanoparticles and process of making the same |
JP2020184641A (ja) * | 2016-04-18 | 2020-11-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 光電子部品の製造方法、および光電子部品 |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0267290A (ja) * | 1988-06-29 | 1990-03-07 | Akad Wissenschaften Ddr | 鳥かご状構造を有する親油性二重環ケイ酸誘導体、その製造方法及びその使用方法 |
JPH06329687A (ja) * | 1993-05-13 | 1994-11-29 | Wacker Chemie Gmbh | 有機ケイ素化合物及びその製法 |
JPH1171462A (ja) * | 1997-08-29 | 1999-03-16 | Toshiba Silicone Co Ltd | 新規な含ケイ素重合体 |
JP2000154252A (ja) * | 1998-11-18 | 2000-06-06 | Agency Of Ind Science & Technol | 新型含シルセスキオキサンポリマー及びその製造方法 |
JP2000198930A (ja) * | 1998-12-28 | 2000-07-18 | Shin Etsu Chem Co Ltd | 付加硬化型シリコ―ン組成物 |
JP2000265066A (ja) * | 1999-03-17 | 2000-09-26 | Dow Corning Asia Ltd | 有機溶剤可溶性の水素化オクタシルセスキオキサン−ビニル基含有化合物共重合体及び同共重合体からなる絶縁材料 |
JP2004186168A (ja) * | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | 発光ダイオード素子用シリコーン樹脂組成物 |
JP2004359933A (ja) * | 2003-05-14 | 2004-12-24 | Nagase Chemtex Corp | 光素子用封止材 |
JP2005290352A (ja) * | 2004-03-12 | 2005-10-20 | Asahi Kasei Corp | カゴ状シルセスキオキサン構造を有する化合物 |
JP2006022207A (ja) * | 2004-07-08 | 2006-01-26 | Chisso Corp | ケイ素化合物 |
WO2006077667A1 (ja) * | 2005-01-24 | 2006-07-27 | Momentive Performance Materials Japan Llc. | 発光素子封止用シリコーン組成物及び発光装置 |
JP2006299150A (ja) * | 2005-04-22 | 2006-11-02 | Asahi Kasei Corp | 封止材用組成物及び光学デバイス |
JP2006299149A (ja) * | 2005-04-22 | 2006-11-02 | Asahi Kasei Corp | 封止材用組成物及び光学デバイス |
JP2007031619A (ja) * | 2005-07-28 | 2007-02-08 | Nagase Chemtex Corp | 光素子封止用樹脂組成物 |
JP2007221071A (ja) * | 2006-02-20 | 2007-08-30 | Matsushita Electric Works Ltd | 半導体光装置及び透明光学部材 |
-
2007
- 2007-08-17 JP JP2009528891A patent/JP5211059B2/ja not_active Expired - Fee Related
- 2007-08-17 WO PCT/JP2007/066030 patent/WO2009025017A1/ja active Application Filing
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0267290A (ja) * | 1988-06-29 | 1990-03-07 | Akad Wissenschaften Ddr | 鳥かご状構造を有する親油性二重環ケイ酸誘導体、その製造方法及びその使用方法 |
JPH06329687A (ja) * | 1993-05-13 | 1994-11-29 | Wacker Chemie Gmbh | 有機ケイ素化合物及びその製法 |
JPH1171462A (ja) * | 1997-08-29 | 1999-03-16 | Toshiba Silicone Co Ltd | 新規な含ケイ素重合体 |
JP2000154252A (ja) * | 1998-11-18 | 2000-06-06 | Agency Of Ind Science & Technol | 新型含シルセスキオキサンポリマー及びその製造方法 |
JP2000198930A (ja) * | 1998-12-28 | 2000-07-18 | Shin Etsu Chem Co Ltd | 付加硬化型シリコ―ン組成物 |
JP2000265066A (ja) * | 1999-03-17 | 2000-09-26 | Dow Corning Asia Ltd | 有機溶剤可溶性の水素化オクタシルセスキオキサン−ビニル基含有化合物共重合体及び同共重合体からなる絶縁材料 |
JP2004186168A (ja) * | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | 発光ダイオード素子用シリコーン樹脂組成物 |
JP2004359933A (ja) * | 2003-05-14 | 2004-12-24 | Nagase Chemtex Corp | 光素子用封止材 |
JP2005290352A (ja) * | 2004-03-12 | 2005-10-20 | Asahi Kasei Corp | カゴ状シルセスキオキサン構造を有する化合物 |
JP2006022207A (ja) * | 2004-07-08 | 2006-01-26 | Chisso Corp | ケイ素化合物 |
WO2006077667A1 (ja) * | 2005-01-24 | 2006-07-27 | Momentive Performance Materials Japan Llc. | 発光素子封止用シリコーン組成物及び発光装置 |
JP2006299150A (ja) * | 2005-04-22 | 2006-11-02 | Asahi Kasei Corp | 封止材用組成物及び光学デバイス |
JP2006299149A (ja) * | 2005-04-22 | 2006-11-02 | Asahi Kasei Corp | 封止材用組成物及び光学デバイス |
JP2007031619A (ja) * | 2005-07-28 | 2007-02-08 | Nagase Chemtex Corp | 光素子封止用樹脂組成物 |
JP2007221071A (ja) * | 2006-02-20 | 2007-08-30 | Matsushita Electric Works Ltd | 半導体光装置及び透明光学部材 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007246880A (ja) * | 2006-02-20 | 2007-09-27 | Matsushita Electric Works Ltd | 半導体光装置及び透明光学部材 |
JP2012007042A (ja) * | 2010-06-23 | 2012-01-12 | Kaneka Corp | 多面体骨格を有するアンモニウムオリゴシリケート、およびポリシロキサン化合物の製造方法 |
JPWO2012090961A1 (ja) * | 2010-12-28 | 2014-06-05 | コニカミノルタ株式会社 | 発光装置、発光装置の製造方法、及び、塗布液 |
US20130099395A1 (en) * | 2011-10-25 | 2013-04-25 | Haruka ONA | Silicone resin composition, encapsulating layer, reflector, and optical semiconductor device |
US8810046B2 (en) * | 2011-10-25 | 2014-08-19 | Nitto Denko Corporation | Silicone resin composition, encapsulating layer, reflector, and optical semiconductor device |
JP2014208615A (ja) * | 2013-03-26 | 2014-11-06 | Jnc株式会社 | アルコキシシリル基含有シルセスキオキサンおよびその組成物 |
WO2015115340A1 (ja) * | 2014-01-31 | 2015-08-06 | 住友化学株式会社 | Uv-led用ポリシルセスキオキサン系封止材組成物及びそのための溶媒の使用 |
WO2017079911A1 (en) * | 2015-11-11 | 2017-05-18 | Dow Global Technologies Llc | Light emitting nanoparticles and process of making the same |
JP2020184641A (ja) * | 2016-04-18 | 2020-11-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 光電子部品の製造方法、および光電子部品 |
JP7168615B2 (ja) | 2016-04-18 | 2022-11-09 | エイエムエス-オスラム インターナショナル ゲーエムベーハー | 光電子部品の製造方法、および光電子部品 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2009025017A1 (ja) | 2010-11-18 |
JP5211059B2 (ja) | 2013-06-12 |
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