JP7030846B2 - 短絡故障モードを有するパワー半導体モジュール - Google Patents
短絡故障モードを有するパワー半導体モジュール Download PDFInfo
- Publication number
- JP7030846B2 JP7030846B2 JP2019561371A JP2019561371A JP7030846B2 JP 7030846 B2 JP7030846 B2 JP 7030846B2 JP 2019561371 A JP2019561371 A JP 2019561371A JP 2019561371 A JP2019561371 A JP 2019561371A JP 7030846 B2 JP7030846 B2 JP 7030846B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- semiconductor module
- wide bandgap
- power semiconductor
- bandgap material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 135
- 239000000463 material Substances 0.000 claims description 87
- 229910052751 metal Inorganic materials 0.000 claims description 75
- 239000002184 metal Substances 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000006023 eutectic alloy Substances 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48105—Connecting bonding areas at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
- H01L2224/48249—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Inverter Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Die Bonding (AREA)
- Power Conversion In General (AREA)
Description
12 基部プレート
14 頂部プレート
16a 第1Siチップ
16a 第2広バンドギャップ材料チップ
18a 第1底部電極
18b 第2底部電極
20a 第1頂部電極
20b 第2頂部電極
22a 第1金属プリフォーム
22b 第2金属プリフォーム
24a 第1プレスピン
24b 第2プレスピン
26a 第1ばね要素
26b 第2ばね要素
28a 第1半導体スイッチ
28b 第2半導体スイッチ
30a 第1ゲート
30b 第2ゲート
32a 第1ゲート電極
32b 第2ゲート電極
34a 第1ゲート端子
34b 第2ゲート端子
Claims (15)
- パワー半導体モジュール(10)であって、
基部プレート(12)と、
Si基板を備えるSiチップ(16a)と、を備え、前記Siチップ(16a)は、前記基部プレート(12)に取り付けられ、前記パワー半導体モジュールはさらに、
前記Siチップ(16a)の面に対して第1プレスピン(24a)で押し付けられる第1金属プリフォーム(22a)と、
広バンドギャップ基板および前記広バンドギャップ基板に設けられる半導体スイッチ(28b)を備える広バンドギャップ材料チップ(16b)と、を備え、前記広バンドギャップ材料チップ(16b)は、前記基部プレート(12)に取り付けられ、前記パワー半導体モジュールはさらに、
前記広バンドギャップ材料チップ(16b)の面に対して第2プレスピン(24b)で押し付けられる第2金属プリフォーム(22b)を備え、
前記Siチップ(16a)および前記広バンドギャップ材料チップ(16b)は、前記基部プレート(12)を介して、ならびに、前記第1プレスピン(24a)および前記第2プレスピン(24b)を介して、並列接続され、
前記第1金属プリフォーム(22a)は、過電流によって加熱されるとき、前記Si基板とともに合金を形成することによって前記Siチップ(16a)を通る伝導経路を形成するように適合され、
前記第1金属プリフォーム(22a)よりも高い融点を有する材料で作製される、前記第2金属プリフォーム(22b)は、過電流によって加熱されるとき、前記広バンドギャップ材料チップ(16b)を通る少なくとも一時的な伝導経路を形成するように適合される、パワー半導体モジュール(10)。 - 前記第2金属プリフォーム(22b)は、前記過電流によって少なくとも部分的に融解されることによって、前記広バンドギャップ材料チップ(16b)を通る少なくとも一時的な伝導経路を形成するように適合される、請求項1に記載のパワー半導体モジュール(10)。
- 前記第1金属プリフォーム(22a)は、Al、Cu、Ag、Mgまたはその合金で作製される、請求項1または請求項2に記載のパワー半導体モジュール(10)。
- 前記第2金属プリフォーム(22b)は、Mo、Wまたはその合金で作製される、請求項1~3のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記基部プレート(12)は、Moで作製される、請求項1~4のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記広バンドギャップ材料チップ(16b)の広バンドギャップ材料は、SiCである、請求項1~5のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)は、前記Si基板に設けられる半導体スイッチ(28a)を備える、請求項1~6のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)の前記半導体スイッチ(28a)のゲート(30a)が、前記広バンドギャップ材料チップ(16b)の前記半導体スイッチ(28b)のゲート(30b)とともに前記半導体モジュール(10)に電気的に接続される、請求項7に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)の前記半導体スイッチ(28a)のゲート(30a)が、前記半導体モジュール(10)の第1ゲート端子(34a)に電気的に接続され、前記広バンドギャップ材料チップ(16b)の前記半導体スイッチ(28b)のゲート(30b)が、前記半導体モジュール(10)の第2ゲート端子(34b)に電気的に接続され、前記Siチップ(16a)の前記半導体スイッチ(28a)が前記広バンドギャップ材料チップ(16b)の前記半導体スイッチ(28b)とは独立して切替可能である、請求項7に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)の前記半導体スイッチ(28a)のゲート(30a)が、前記半導体モジュール(10)によって提供されるゲート端子に接続されていない、請求項7に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)が、アクティブな切替可能スイッチを備えていない、請求項1から請求項6のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)が、不活性Si層である、請求項1から請求項6のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記パワー半導体モジュール(10)は、前記Siチップ(16a)と並列接続される少なくとも2つの広バンドギャップ材料チップ(16b)を備える、請求項1~12のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記第1プレスピン(24a)および前記第2プレスピン(24b)に接続される導電性頂部プレート(14)をさらに備える、請求項1~13のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記第1プレスピン(24a)および前記第2プレスピン(24b)の少なくとも1つが、ばね要素(26a,26b)を備える、請求項1~14のいずれか1項に記載のパワー半導体モジュール(10)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17154197.2 | 2017-02-01 | ||
EP17154197 | 2017-02-01 | ||
PCT/EP2018/052559 WO2018141867A1 (en) | 2017-02-01 | 2018-02-01 | Power semiconductor module with short circuit failure mode |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020505792A JP2020505792A (ja) | 2020-02-20 |
JP2020505792A5 JP2020505792A5 (ja) | 2021-03-11 |
JP7030846B2 true JP7030846B2 (ja) | 2022-03-07 |
Family
ID=57956191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019561371A Active JP7030846B2 (ja) | 2017-02-01 | 2018-02-01 | 短絡故障モードを有するパワー半導体モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US10872830B2 (ja) |
EP (1) | EP3566246B1 (ja) |
JP (1) | JP7030846B2 (ja) |
CN (1) | CN110268517B (ja) |
WO (1) | WO2018141867A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3577687B1 (en) * | 2017-02-01 | 2020-10-07 | ABB Power Grids Switzerland AG | Power semiconductor device with active short circuit failure mode and method of controlling the same |
WO2020114660A1 (en) | 2018-12-07 | 2020-06-11 | Abb Schweiz Ag | Hybrid short circuit failure mode preform for power semiconductor devices |
JP7142183B2 (ja) * | 2019-07-09 | 2022-09-26 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 集積サージアレスタを有するパワー半導体モジュール |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006500774A (ja) | 2002-09-27 | 2006-01-05 | アーベーベー・リサーチ・リミテッド | プレスパックパワー半導体モジュール |
JP2014116478A (ja) | 2012-12-11 | 2014-06-26 | Meidensha Corp | 半導体モジュール及び半導体モジュールの製造方法並びに電力変換装置 |
WO2016062426A1 (en) | 2014-10-24 | 2016-04-28 | Abb Technology Ag | Semiconductor module and stack arrangement of semiconductor modules |
WO2016165843A1 (en) | 2015-04-13 | 2016-10-20 | Abb Technology Ag | Power electronics module |
JP2016219532A (ja) | 2015-05-18 | 2016-12-22 | 株式会社デンソー | 半導体装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19843309A1 (de) * | 1998-09-22 | 2000-03-23 | Asea Brown Boveri | Kurzschlussfestes IGBT Modul |
US7034345B2 (en) * | 2003-03-27 | 2006-04-25 | The Boeing Company | High-power, integrated AC switch module with distributed array of hybrid devices |
EP2528092A1 (en) * | 2011-05-27 | 2012-11-28 | ABB Research Ltd. | Semiconductor device |
EP2673803B1 (en) | 2011-02-08 | 2021-04-14 | ABB Power Grids Switzerland AG | Power semiconductor module and method to produce a power semiconductor module |
EP2503595A1 (en) | 2011-02-18 | 2012-09-26 | ABB Research Ltd. | Power semiconductor module and method of manufacturing a power semiconductor module |
EP2530711A1 (en) * | 2011-05-30 | 2012-12-05 | ABB Research Ltd. | Power semiconductor arrangement |
WO2013004297A1 (en) | 2011-07-05 | 2013-01-10 | Abb Technology Ag | Short-circuit failure mode with multiple device breakdown |
WO2013118415A1 (ja) * | 2012-02-09 | 2013-08-15 | 富士電機株式会社 | 半導体装置 |
US20140185346A1 (en) * | 2012-12-28 | 2014-07-03 | Eaton Corporation | Hybrid power devices and switching circuits for high power load sourcing applications |
US9385111B2 (en) * | 2013-11-22 | 2016-07-05 | Infineon Technologies Austria Ag | Electronic component with electronic chip between redistribution structure and mounting structure |
WO2015176985A1 (en) * | 2014-05-20 | 2015-11-26 | Abb Technology Ag | Semiconductor power module with low stray inductance |
CN104241372B (zh) * | 2014-08-04 | 2020-05-26 | 台州市一能科技有限公司 | 宽禁带半导体器件及其制备方法 |
WO2016136457A1 (ja) * | 2015-02-25 | 2016-09-01 | 三菱電機株式会社 | パワーモジュール |
JP6634945B2 (ja) * | 2016-04-19 | 2020-01-22 | 株式会社デンソー | 半導体モジュール |
EP3352213B1 (en) * | 2017-01-23 | 2021-10-06 | ABB Power Grids Switzerland AG | Semiconductor power module comprising graphene |
JP6881238B2 (ja) * | 2017-10-31 | 2021-06-02 | 三菱電機株式会社 | 半導体モジュール、その製造方法及び電力変換装置 |
-
2018
- 2018-02-01 CN CN201880009810.XA patent/CN110268517B/zh active Active
- 2018-02-01 JP JP2019561371A patent/JP7030846B2/ja active Active
- 2018-02-01 WO PCT/EP2018/052559 patent/WO2018141867A1/en unknown
- 2018-02-01 EP EP18704192.6A patent/EP3566246B1/en active Active
-
2019
- 2019-08-01 US US16/529,295 patent/US10872830B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006500774A (ja) | 2002-09-27 | 2006-01-05 | アーベーベー・リサーチ・リミテッド | プレスパックパワー半導体モジュール |
JP2014116478A (ja) | 2012-12-11 | 2014-06-26 | Meidensha Corp | 半導体モジュール及び半導体モジュールの製造方法並びに電力変換装置 |
WO2016062426A1 (en) | 2014-10-24 | 2016-04-28 | Abb Technology Ag | Semiconductor module and stack arrangement of semiconductor modules |
WO2016165843A1 (en) | 2015-04-13 | 2016-10-20 | Abb Technology Ag | Power electronics module |
JP2016219532A (ja) | 2015-05-18 | 2016-12-22 | 株式会社デンソー | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN110268517A (zh) | 2019-09-20 |
WO2018141867A1 (en) | 2018-08-09 |
US20190355634A1 (en) | 2019-11-21 |
EP3566246A1 (en) | 2019-11-13 |
EP3566246B1 (en) | 2020-11-18 |
CN110268517B (zh) | 2023-03-21 |
JP2020505792A (ja) | 2020-02-20 |
US10872830B2 (en) | 2020-12-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7538436B2 (en) | Press pack power semiconductor module | |
JP7008912B2 (ja) | 能動的な短絡故障モードを有するパワー半導体装置 | |
JP7030846B2 (ja) | 短絡故障モードを有するパワー半導体モジュール | |
EP3276661B1 (en) | Semiconductor device | |
US20070040260A1 (en) | Power semiconductor device comprising a semiconductor chip stack and method for producing the same | |
US20120211799A1 (en) | Power semiconductor module and method of manufacturing a power semiconductor module | |
JP2013089948A (ja) | 半導体装置およびその製造方法 | |
EP2530711A1 (en) | Power semiconductor arrangement | |
CN112786573A (zh) | 交流电固态开关 | |
JP5899952B2 (ja) | 半導体モジュール | |
JP4096741B2 (ja) | 半導体装置 | |
US20110156094A1 (en) | Electrical module | |
CN109478543B (zh) | 半导体装置 | |
JP2014032985A (ja) | 半導体装置およびその製造方法 | |
JP2012084621A (ja) | 電極端子及び半導体モジュール | |
CN107112312B (zh) | 具有短路故障模式的功率半导体模块 | |
JP2013042142A (ja) | 電力半導体装置、複数の電力半導体装置を備えた電力半導体モジュール、及び複数の電力半導体モジュールを有するモジュール・アセンブリ | |
JP2015115349A (ja) | 半導体装置 | |
JP7218564B2 (ja) | 半導体装置 | |
JP3240772U (ja) | パワー半導体モジュール | |
Hohlfeld | Perspective of power module packaging technology | |
JP2015088571A (ja) | 半導体モジュールの製造方法 | |
JP2002076261A (ja) | パワー半導体モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210127 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210127 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20211129 |
|
TRDD | Decision of grant or rejection written | ||
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220120 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220125 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220222 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7030846 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |