JP2020505792A - 短絡故障モードを有するパワー半導体モジュール - Google Patents
短絡故障モードを有するパワー半導体モジュール Download PDFInfo
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- JP2020505792A JP2020505792A JP2019561371A JP2019561371A JP2020505792A JP 2020505792 A JP2020505792 A JP 2020505792A JP 2019561371 A JP2019561371 A JP 2019561371A JP 2019561371 A JP2019561371 A JP 2019561371A JP 2020505792 A JP2020505792 A JP 2020505792A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 138
- 239000000463 material Substances 0.000 claims abstract description 92
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000002844 melting Methods 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 17
- 229910010271 silicon carbide Inorganic materials 0.000 description 17
- 239000010949 copper Substances 0.000 description 6
- 239000006023 eutectic alloy Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
12 基部プレート
14 頂部プレート
16a 第1Siチップ
16a 第2広バンドギャップ材料チップ
18a 第1底部電極
18b 第2底部電極
20a 第1頂部電極
20b 第2頂部電極
22a 第1金属プリフォーム
22b 第2金属プリフォーム
24a 第1プレスピン
24b 第2プレスピン
26a 第1ばね要素
26b 第2ばね要素
28a 第1半導体スイッチ
28b 第2半導体スイッチ
30a 第1ゲート
30b 第2ゲート
32a 第1ゲート電極
32b 第2ゲート電極
34a 第1ゲート端子
34b 第2ゲート端子
Claims (15)
- パワー半導体モジュール(10)であって、
基部プレート(12)と、
Si基板を備えるSiチップ(16a)と、を備え、前記Siチップ(16a)は、前記基部プレート(12)に取り付けられ、前記パワー半導体モジュールはさらに、
前記Siチップ(16a)の面に対して第1プレスピン(24a)で押し付けられる第1金属プリフォーム(22a)と、
広バンドギャップ基板および前記広バンドギャップ基板に設けられる半導体スイッチ(28b)を備える広バンドギャップ材料チップ(16b)と、を備え、前記広バンドギャップ材料チップ(16b)は、前記基部プレート(12)に取り付けられ、前記パワー半導体モジュールはさらに、
前記広バンドギャップ材料チップ(16b)の面に対して第2プレスピン(24b)で押し付けられる第2金属プリフォーム(22b)を備え、
前記Siチップ(16a)および前記広バンドギャップ材料チップ(16b)は、前記基部プレート(12)を介して、ならびに、前記第1プレスピン(24a)および前記第2プレスピン(24b)を介して、並列接続され、
前記第1金属プリフォーム(22a)は、過電流によって加熱されるとき、前記Si基板とともに合金を形成することによって前記Siチップ(16a)を通る伝導経路を形成するように適合され、
前記第1金属プリフォーム(22a)よりも高い融点を有する材料で作製される、前記第2金属プリフォーム(22b)は、過電流によって加熱されるとき、前記広バンドギャップ材料チップ(16b)を通る少なくとも一時的な伝導経路を形成するように適合される、パワー半導体モジュール(10)。 - 前記第2金属プリフォーム(22b)は、前記過電流によって少なくとも部分的に融解されることによって、前記広バンドギャップ材料チップ(16b)を通る少なくとも一時的な伝導経路を形成するように適合される、請求項1に記載のパワー半導体モジュール(10)。
- 前記第1金属プリフォーム(22a)は、Al、Cu、Ag、Mgまたはその合金で作製される、請求項1または請求項2に記載のパワー半導体モジュール(10)。
- 前記第2金属プリフォーム(22b)は、Mo、Wまたはその合金で作製される、先行する請求項のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記基部プレート(12)は、Moで作製される、先行する請求項のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記広バンドギャップ材料チップ(16b)の広バンドギャップ材料は、SiCである、先行する請求項のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)は、前記Si基板に設けられる半導体スイッチ(28a)を備える、先行する請求項のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)の前記半導体スイッチ(28a)のゲート(30a)が、前記広バンドギャップ材料チップ(16b)の前記半導体スイッチ(28b)のゲート(30b)とともに前記半導体モジュール(10)に電気的に接続される、請求項7に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)の前記半導体スイッチ(28a)のゲート(30a)が、前記半導体モジュール(10)の第1ゲート端子(34a)に電気的に接続され、前記広バンドギャップ材料チップ(16b)の前記半導体スイッチ(28b)のゲート(30b)が、前記半導体モジュール(10)の第2ゲート端子(34b)に電気的に接続され、前記Siチップ(16a)の前記半導体スイッチ(28a)が前記広バンドギャップ材料チップ(16b)の前記半導体スイッチ(28b)とは独立して切替可能である、請求項7に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)の前記半導体スイッチ(28a)のゲート(30a)が、前記半導体モジュール(10)によって提供されるゲート端子に接続されていない、請求項7に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)が、アクティブな切替可能スイッチを備えていない、請求項1から請求項6のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記Siチップ(16a)が、不活性Si層である、請求項1から請求項6のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記パワー半導体モジュール(10)は、前記Siチップ(16a)と並列接続される少なくとも2つの広バンドギャップ材料チップ(16b)を備える、先行する請求項のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記第1プレスピン(24a)および前記第2プレスピン(24b)に接続される導電性頂部プレート(14)をさらに備える、先行する請求項のいずれか1項に記載のパワー半導体モジュール(10)。
- 前記第1プレスピン(24a)および前記第2プレスピン(24b)の少なくとも1つが、ばね要素(26a,26b)を備える、先行する請求項のいずれか1項に記載のパワー半導体モジュール(10)。
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EP17154197 | 2017-02-01 | ||
EP17154197.2 | 2017-02-01 | ||
PCT/EP2018/052559 WO2018141867A1 (en) | 2017-02-01 | 2018-02-01 | Power semiconductor module with short circuit failure mode |
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JP2020505792A true JP2020505792A (ja) | 2020-02-20 |
JP2020505792A5 JP2020505792A5 (ja) | 2021-03-11 |
JP7030846B2 JP7030846B2 (ja) | 2022-03-07 |
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US (1) | US10872830B2 (ja) |
EP (1) | EP3566246B1 (ja) |
JP (1) | JP7030846B2 (ja) |
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WO (1) | WO2018141867A1 (ja) |
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WO2020114660A1 (en) | 2018-12-07 | 2020-06-11 | Abb Schweiz Ag | Hybrid short circuit failure mode preform for power semiconductor devices |
WO2021005171A1 (en) * | 2019-07-09 | 2021-01-14 | Abb Power Grids Switzerland Ag | Power semiconductor module with integrated surge arrester |
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EP2530711A1 (en) * | 2011-05-30 | 2012-12-05 | ABB Research Ltd. | Power semiconductor arrangement |
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US20190355634A1 (en) | 2019-11-21 |
CN110268517B (zh) | 2023-03-21 |
EP3566246A1 (en) | 2019-11-13 |
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WO2018141867A1 (en) | 2018-08-09 |
US10872830B2 (en) | 2020-12-22 |
CN110268517A (zh) | 2019-09-20 |
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