CN104241372B - 宽禁带半导体器件及其制备方法 - Google Patents
宽禁带半导体器件及其制备方法 Download PDFInfo
- Publication number
- CN104241372B CN104241372B CN201410379970.7A CN201410379970A CN104241372B CN 104241372 B CN104241372 B CN 104241372B CN 201410379970 A CN201410379970 A CN 201410379970A CN 104241372 B CN104241372 B CN 104241372B
- Authority
- CN
- China
- Prior art keywords
- wide bandgap
- semiconductor device
- chip
- bandgap semiconductor
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 132
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 84
- 230000017525 heat dissipation Effects 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 91
- 239000002184 metal Substances 0.000 claims description 91
- 238000007747 plating Methods 0.000 claims description 43
- 238000005245 sintering Methods 0.000 claims description 39
- 239000004020 conductor Substances 0.000 claims description 37
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 15
- 238000003466 welding Methods 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 239000002923 metal particle Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 28
- 239000011248 coating agent Substances 0.000 description 18
- 238000000576 coating method Methods 0.000 description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012255 powdered metal Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (27)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410379970.7A CN104241372B (zh) | 2014-08-04 | 2014-08-04 | 宽禁带半导体器件及其制备方法 |
PCT/CN2015/072909 WO2016019720A1 (zh) | 2014-08-04 | 2015-02-12 | 宽禁带半导体器件及其制备方法 |
US15/312,622 US20170084510A1 (en) | 2014-08-04 | 2015-02-12 | A Wide Band Gap Semiconductor Device and Its Fabrication Process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410379970.7A CN104241372B (zh) | 2014-08-04 | 2014-08-04 | 宽禁带半导体器件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104241372A CN104241372A (zh) | 2014-12-24 |
CN104241372B true CN104241372B (zh) | 2020-05-26 |
Family
ID=52229125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410379970.7A Expired - Fee Related CN104241372B (zh) | 2014-08-04 | 2014-08-04 | 宽禁带半导体器件及其制备方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20170084510A1 (zh) |
CN (1) | CN104241372B (zh) |
WO (1) | WO2016019720A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104241372B (zh) * | 2014-08-04 | 2020-05-26 | 台州市一能科技有限公司 | 宽禁带半导体器件及其制备方法 |
JP7030846B2 (ja) * | 2017-02-01 | 2022-03-07 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 短絡故障モードを有するパワー半導体モジュール |
JP7082506B2 (ja) * | 2018-03-16 | 2022-06-08 | 株式会社神戸製鋼所 | 熱伝導性無機基板及び半導体装置 |
FR3103582B1 (fr) * | 2019-11-21 | 2022-12-16 | Safran Electronics & Defense | Calculateur embarqué avec entreproseur sur la puce microprocesseur |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101064260A (zh) * | 2006-04-26 | 2007-10-31 | 碁成科技股份有限公司 | 功率芯片的封装制程 |
CN102064172A (zh) * | 2010-11-10 | 2011-05-18 | 瑞声声学科技(深圳)有限公司 | 发光二极体封装构造 |
CN202434567U (zh) * | 2011-12-23 | 2012-09-12 | 彩虹集团公司 | 一种用于led封装的支架结构 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101149A (ja) * | 2003-09-24 | 2005-04-14 | Sharp Corp | 半導体発光装置及びその製造方法 |
JP2007281146A (ja) * | 2006-04-05 | 2007-10-25 | Sharp Corp | 半導体発光装置 |
KR100845856B1 (ko) * | 2006-12-21 | 2008-07-14 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
CN101359704B (zh) * | 2007-07-30 | 2010-06-09 | 晶元光电股份有限公司 | 发光元件及其制造方法 |
KR100986397B1 (ko) * | 2010-02-08 | 2010-10-08 | 엘지이노텍 주식회사 | 발광 장치 |
US8598612B2 (en) * | 2010-03-30 | 2013-12-03 | Micron Technology, Inc. | Light emitting diode thermally enhanced cavity package and method of manufacture |
WO2012061184A1 (en) * | 2010-11-03 | 2012-05-10 | 3M Innovative Properties Company | Flexible led device and method of making |
CN204067370U (zh) * | 2014-08-04 | 2014-12-31 | 台州市一能科技有限公司 | 宽禁带半导体器件 |
CN104241372B (zh) * | 2014-08-04 | 2020-05-26 | 台州市一能科技有限公司 | 宽禁带半导体器件及其制备方法 |
-
2014
- 2014-08-04 CN CN201410379970.7A patent/CN104241372B/zh not_active Expired - Fee Related
-
2015
- 2015-02-12 WO PCT/CN2015/072909 patent/WO2016019720A1/zh active Application Filing
- 2015-02-12 US US15/312,622 patent/US20170084510A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101064260A (zh) * | 2006-04-26 | 2007-10-31 | 碁成科技股份有限公司 | 功率芯片的封装制程 |
CN102064172A (zh) * | 2010-11-10 | 2011-05-18 | 瑞声声学科技(深圳)有限公司 | 发光二极体封装构造 |
CN202434567U (zh) * | 2011-12-23 | 2012-09-12 | 彩虹集团公司 | 一种用于led封装的支架结构 |
Also Published As
Publication number | Publication date |
---|---|
US20170084510A1 (en) | 2017-03-23 |
WO2016019720A1 (zh) | 2016-02-11 |
CN104241372A (zh) | 2014-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0009978B1 (en) | Hybrid type integrated circuit device | |
CN104241372B (zh) | 宽禁带半导体器件及其制备方法 | |
CN103681542B (zh) | 芯片封装和用于制作芯片封装的方法 | |
CN109599480B (zh) | 热电模块及包含该热电模块的热转换装置 | |
CN105304593A (zh) | 用于光电器件的高效散热基板 | |
CN103035591A (zh) | 半导体封装件及其制造方法 | |
JP2015088649A (ja) | チップ支持基板の配線部裏面に放熱器設置の面領域を設定する方法およびチップ支持基板並びにチップ実装構造体 | |
CN103633550B (zh) | 一种半导体激光器bar条垂直阵列的封装方法 | |
CN106783753A (zh) | 半导体器件 | |
TWM595383U (zh) | 散熱型電子裝置 | |
US9299633B2 (en) | Semiconductor device, heat radiation member, and manufacturing method for semiconductor device | |
US10381540B2 (en) | Thermoelectric module and heat converter including the same | |
CN204067370U (zh) | 宽禁带半导体器件 | |
CN112164680A (zh) | 一种裸芯封装结构及其封装方法 | |
CN209747497U (zh) | 一种芯片基板和封装芯片 | |
CN209747502U (zh) | 一种芯片基板和封装芯片 | |
CN103247742A (zh) | 一种led散热基板及其制造方法 | |
US20200245500A1 (en) | Embedded cooling tubes, systems incorporating the same, and methods of forming the same | |
CN105914283A (zh) | 散热基板、功率模块及制备散热基板的方法 | |
JP5724415B2 (ja) | 半導体モジュール | |
TWM407489U (en) | IC carrier board with high thermal conductivity, packaging IC carrier board, and electronic devices | |
CN103956426B (zh) | 半导体发光芯片及发光装置 | |
CN211879373U (zh) | 一种散热的半导体 | |
TWI728672B (zh) | 散熱型電子裝置 | |
CN219017636U (zh) | 一种半导体散热器的散热鳍片 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200107 Address after: West of 4th floor, building 3, No. 818, east section of development avenue, Taizhou City, Zhejiang Province Applicant after: TAIZHOU BEYOND TECHNOLOGY Co.,Ltd. Address before: 318000, Zhejiang, Taizhou Province, 818 Eastern Road Development Avenue, 3, west side of the 4 Applicant before: TAIZHOU BEYOND TECHNOLOGY Co.,Ltd. Applicant before: Hoshino Masahiro |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200526 Termination date: 20210804 |