CN110268517A - 具有短路失效模式的功率半导体模块 - Google Patents
具有短路失效模式的功率半导体模块 Download PDFInfo
- Publication number
- CN110268517A CN110268517A CN201880009810.XA CN201880009810A CN110268517A CN 110268517 A CN110268517 A CN 110268517A CN 201880009810 A CN201880009810 A CN 201880009810A CN 110268517 A CN110268517 A CN 110268517A
- Authority
- CN
- China
- Prior art keywords
- chip
- wide bandgap
- power semiconductor
- bandgap material
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 239000000463 material Substances 0.000 claims abstract description 94
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000003825 pressing Methods 0.000 claims abstract description 33
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 17
- 229910010271 silicon carbide Inorganic materials 0.000 description 17
- 239000004020 conductor Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- 239000006023 eutectic alloy Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000714 At alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48105—Connecting bonding areas at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
- H01L2224/48249—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Inverter Devices (AREA)
- Die Bonding (AREA)
- Power Conversion In General (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17154197 | 2017-02-01 | ||
EP17154197.2 | 2017-02-01 | ||
PCT/EP2018/052559 WO2018141867A1 (en) | 2017-02-01 | 2018-02-01 | Power semiconductor module with short circuit failure mode |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110268517A true CN110268517A (zh) | 2019-09-20 |
CN110268517B CN110268517B (zh) | 2023-03-21 |
Family
ID=57956191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880009810.XA Active CN110268517B (zh) | 2017-02-01 | 2018-02-01 | 具有短路失效模式的功率半导体模块 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10872830B2 (zh) |
EP (1) | EP3566246B1 (zh) |
JP (1) | JP7030846B2 (zh) |
CN (1) | CN110268517B (zh) |
WO (1) | WO2018141867A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113169154A (zh) * | 2018-12-07 | 2021-07-23 | Abb电网瑞士股份公司 | 用于功率半导体器件的混合短路故障模式预型件 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7008912B2 (ja) * | 2017-02-01 | 2022-01-25 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 能動的な短絡故障モードを有するパワー半導体装置 |
WO2021005171A1 (en) * | 2019-07-09 | 2021-01-14 | Abb Power Grids Switzerland Ag | Power semiconductor module with integrated surge arrester |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2528092A1 (en) * | 2011-05-27 | 2012-11-28 | ABB Research Ltd. | Semiconductor device |
EP2530711A1 (en) * | 2011-05-30 | 2012-12-05 | ABB Research Ltd. | Power semiconductor arrangement |
EP2729964A1 (en) * | 2011-07-05 | 2014-05-14 | ABB Technology AG | Short-circuit failure mode with multiple device breakdown |
CN104040715A (zh) * | 2012-02-09 | 2014-09-10 | 富士电机株式会社 | 半导体器件 |
CN104241372A (zh) * | 2014-08-04 | 2014-12-24 | 台州市一能科技有限公司 | 宽禁带半导体器件及其制备方法 |
WO2015176985A1 (en) * | 2014-05-20 | 2015-11-26 | Abb Technology Ag | Semiconductor power module with low stray inductance |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19843309A1 (de) * | 1998-09-22 | 2000-03-23 | Asea Brown Boveri | Kurzschlussfestes IGBT Modul |
EP1403923A1 (en) | 2002-09-27 | 2004-03-31 | Abb Research Ltd. | Press pack power semiconductor module |
US7034345B2 (en) * | 2003-03-27 | 2006-04-25 | The Boeing Company | High-power, integrated AC switch module with distributed array of hybrid devices |
CN103370786B (zh) | 2011-02-08 | 2016-09-14 | Abb研究有限公司 | 功率半导体模块 |
EP2503595A1 (en) | 2011-02-18 | 2012-09-26 | ABB Research Ltd. | Power semiconductor module and method of manufacturing a power semiconductor module |
JP2014116478A (ja) | 2012-12-11 | 2014-06-26 | Meidensha Corp | 半導体モジュール及び半導体モジュールの製造方法並びに電力変換装置 |
US20140185346A1 (en) * | 2012-12-28 | 2014-07-03 | Eaton Corporation | Hybrid power devices and switching circuits for high power load sourcing applications |
US9385111B2 (en) * | 2013-11-22 | 2016-07-05 | Infineon Technologies Austria Ag | Electronic component with electronic chip between redistribution structure and mounting structure |
JP6259168B2 (ja) * | 2014-10-24 | 2018-01-10 | アーベーベー・シュバイツ・アーゲー | 半導体モジュールおよび半導体モジュールのスタック配列 |
JP6234630B2 (ja) * | 2015-02-25 | 2017-11-22 | 三菱電機株式会社 | パワーモジュール |
CN107636827B (zh) | 2015-04-13 | 2020-05-12 | Abb瑞士股份有限公司 | 功率电子设备模块 |
JP6269573B2 (ja) | 2015-05-18 | 2018-01-31 | 株式会社デンソー | 半導体装置 |
JP6634945B2 (ja) * | 2016-04-19 | 2020-01-22 | 株式会社デンソー | 半導体モジュール |
EP3352213B1 (en) * | 2017-01-23 | 2021-10-06 | ABB Power Grids Switzerland AG | Semiconductor power module comprising graphene |
JP6881238B2 (ja) * | 2017-10-31 | 2021-06-02 | 三菱電機株式会社 | 半導体モジュール、その製造方法及び電力変換装置 |
-
2018
- 2018-02-01 EP EP18704192.6A patent/EP3566246B1/en active Active
- 2018-02-01 CN CN201880009810.XA patent/CN110268517B/zh active Active
- 2018-02-01 JP JP2019561371A patent/JP7030846B2/ja active Active
- 2018-02-01 WO PCT/EP2018/052559 patent/WO2018141867A1/en unknown
-
2019
- 2019-08-01 US US16/529,295 patent/US10872830B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2528092A1 (en) * | 2011-05-27 | 2012-11-28 | ABB Research Ltd. | Semiconductor device |
EP2530711A1 (en) * | 2011-05-30 | 2012-12-05 | ABB Research Ltd. | Power semiconductor arrangement |
EP2729964A1 (en) * | 2011-07-05 | 2014-05-14 | ABB Technology AG | Short-circuit failure mode with multiple device breakdown |
CN104040715A (zh) * | 2012-02-09 | 2014-09-10 | 富士电机株式会社 | 半导体器件 |
WO2015176985A1 (en) * | 2014-05-20 | 2015-11-26 | Abb Technology Ag | Semiconductor power module with low stray inductance |
CN104241372A (zh) * | 2014-08-04 | 2014-12-24 | 台州市一能科技有限公司 | 宽禁带半导体器件及其制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113169154A (zh) * | 2018-12-07 | 2021-07-23 | Abb电网瑞士股份公司 | 用于功率半导体器件的混合短路故障模式预型件 |
Also Published As
Publication number | Publication date |
---|---|
US20190355634A1 (en) | 2019-11-21 |
CN110268517B (zh) | 2023-03-21 |
JP2020505792A (ja) | 2020-02-20 |
EP3566246A1 (en) | 2019-11-13 |
JP7030846B2 (ja) | 2022-03-07 |
WO2018141867A1 (en) | 2018-08-09 |
US10872830B2 (en) | 2020-12-22 |
EP3566246B1 (en) | 2020-11-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7898080B2 (en) | Power semiconductor device comprising a semiconductor chip stack and method for producing the same | |
CN110268522B (zh) | 具有主动短路故障模式的功率半导体装置 | |
JP5202528B2 (ja) | 電力変換器 | |
CA2670204C (en) | Explosion-proof module structure for power components, particularly power semiconductor components, and production thereof | |
CN103370786B (zh) | 功率半导体模块 | |
US10872830B2 (en) | Power semiconductor module with short circuit failure mode | |
JP2012175113A (ja) | パワー半導体モジュールおよびパワー半導体モジュールの製造方法 | |
EP2530711A1 (en) | Power semiconductor arrangement | |
JP4781472B2 (ja) | 半導体開閉器、電子開閉装置および接触兼分離モジュールを電気的に分離するための装置 | |
US11171571B2 (en) | Alternating current solid-state switch | |
EP2544229A1 (en) | Power semiconductor arrangement | |
CN110753996B (zh) | 功率电子设备模块 | |
US20110156094A1 (en) | Electrical module | |
CN108701671A (zh) | 制造电路载体的方法、电路载体、制造半导体模块的方法和半导体模块 | |
CN107112312B (zh) | 具有短路故障模式的功率半导体模块 | |
CN219040456U (zh) | 功率半导体模块 | |
GB2520566A (en) | Fail Safe Switch | |
EP2490256A1 (en) | Electronic arrangement | |
CN115472594A (zh) | 功率半导体模块 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210602 Address after: Baden, Switzerland Applicant after: ABB grid Switzerland AG Address before: Baden, Switzerland Applicant before: ABB Switzerland Co.,Ltd. |
|
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Swiss Baden Applicant after: Hitachi energy Switzerland AG Address before: Swiss Baden Applicant before: ABB grid Switzerland AG |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240104 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |