JP7008912B2 - 能動的な短絡故障モードを有するパワー半導体装置 - Google Patents
能動的な短絡故障モードを有するパワー半導体装置 Download PDFInfo
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- JP7008912B2 JP7008912B2 JP2019561367A JP2019561367A JP7008912B2 JP 7008912 B2 JP7008912 B2 JP 7008912B2 JP 2019561367 A JP2019561367 A JP 2019561367A JP 2019561367 A JP2019561367 A JP 2019561367A JP 7008912 B2 JP7008912 B2 JP 7008912B2
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- wide bandgap
- bandgap material
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Description
本発明は、パワー半導体装置の分野に関する。特に、本発明は、パワー半導体装置を制御するための方法および当該半導体装置に関する。
コンバータ、電気駆動装置、およびSTATCOM等のパワー半導体装置は、通常、複数のパワー半導体モジュールから組み立てられる。複数のパワー半導体モジュールの各々は、1つ以上のパワー半導体素子を機械的および電気的に接続する。高電圧直流実用例において、高電圧かつ高電流の要件を満たすために、通常、多数のパワー半導体モジュールの直列接続が必要とされる。故障の場合に持続的に導通状態となるパワー半導体装置は、そのような直列接続において優れた利点を有し得る。
本発明の目的は、ワイドバンドギャップ半導体素子に基づく、コンパクトで、安全で、かつ複雑さが軽減されたパワー半導体装置を提供することである。
例示的な実施形態の詳細な説明
図1は、Siチップ12とワイドバンドギャップ素材のチップ16とを有するパワー半導体装置10を示す。Siチップ12には、Siスイッチ14が設けられている。ワイドバンドギャップ素材のチップ16には、ワイドバンドギャップ素材のスイッチ18が設けられている。スイッチ14,18の両方は、並列に接続されている。
10 パワー半導体装置
12 Siチップ
14 Siスイッチ
16 ワイドバンドギャップ素材のチップ
18 ワイドバンドギャップ素材のスイッチ
20,22 ゲート
24 ゲートコントローラ
26 計測部
28 金属プリフォーム
30,30’ パワー半導体モジュール
32,32’ 筐体
34 ベースプレート
36 トッププレート
38,38’ 下部電極
40,40’ 上部電極
42,42’ プレスピン
44,44’ スプリング要素
46,46’ ゲート端子
48 金属クリップ
Claims (14)
- Siチップ(12)とワイドバンドギャップ素材のチップ(16)とを有するパワー半導体装置(10)を制御するための方法であって、
前記Siチップ(12)は、Siスイッチ(14)を提供し、
前記ワイドバンドギャップ素材のチップ(16)は、ワイドバンドギャップ素材のスイッチ(18)を提供し、
前記Siスイッチ(14)および前記ワイドバンドギャップ素材のスイッチ(18)は、電気的に並列に接続され、
前記方法は、
通常操作モードの間、少なくとも前記ワイドバンドギャップ素材のスイッチ(18)に複数の対応ゲート信号を印加することによって前記パワー半導体装置(10)を流れる電流を切り替えるために、少なくとも前記ワイドバンドギャップ素材のスイッチ(18)を制御することと、
前記パワー半導体装置(10)における故障を検知することと、
故障が検知された場合、前記Siチップ(12)を通過する持続的な導通経路を形成する温度まで前記Siチップ(12)を加熱する電流が前記Siチップ(12)において生成されるように、前記Siチップ(12)にゲート信号を印加することによって前記Siスイッチ(14)を制御することとを含み、
前記Siチップ(12)の内部抵抗が前記通常操作モードの場合よりも高くなるように、前記Siスイッチ(14)に印加される前記ゲート信号は、前記通常操作モードの場合よりも低い電圧を有する、方法。 - 前記故障を検知した後に前記Siスイッチ(14)のみにゲート信号が与えられるように、前記Siスイッチ(14)用のゲート信号および前記ワイドバンドギャップ素材のスイッチ(18)用のゲート信号は、互いから独立に生成可能である、請求項1に記載の方法。
- 前記通常操作モードの間、前記Siスイッチ(14)は制御されることにより、前記ワイドバンドギャップ素材のスイッチ(18)に切り替えられる、請求項1または2に記載の方法。
- 前記パワー半導体装置(10)が導通状態に切り替えられる場合、前記故障は、前記パワー半導体装置(10)全体の電圧を計測することによって検知され、故障の場合の前記電圧は、公称電圧よりも高い、請求項1~3のいずれか1項に記載の方法。
- 前記故障は、前記ワイドバンドギャップ素材のチップ(16)を収容するパワー半導体モジュール(30,30’)の内部における光検出および前記ワイドバンドギャップ素材のチップ(16)を収容するパワー半導体モジュール(30,30’)の内部におけるアーク電圧検出の少なくとも1つによって検知される、請求項1~4のいずれか1項に記載の方法。
- 前記Siチップ(12)は、前記Siチップ(12)を流れる電流によって特定温度より高く加熱される場合、前記Siチップ(12)を通過する導通経路を形成するように適合された金属プリフォーム(28)に取り付けられる、請求項1~5のいずれか1項に記載の方法。
- 前記パワー半導体装置(10)は、過電流によって加熱される場合、前記ワイドバンドギャップ素材のチップ(16)を通過する少なくとも一時的な導通経路を形成するように適合され、
前記ワイドバンドギャップ素材のチップ(16)は、前記導通経路を形成するように適合された金属プリフォーム(28’)に取り付けられる、請求項1~6のいずれか1項に記載の方法。 - 前記Siスイッチ(14)は、サイリスタ、トランジスタ、または内部逆導通ダイオードを有するバイモード型スイッチであり、
前記ワイドバンドギャップ素材の少なくとも1つは、SiCであり、かつ、前記ワイドバンドギャップ素材のスイッチ(18)は、トランジスタである、請求項1~7のいずれか1項に記載の方法。 - Siスイッチ(14)を有するSiチップ(12)とワイドバンドギャップ素材のスイッチ(18)を有するワイドバンドギャップ素材のチップ(16)とを収容するための少なくとも1つのパワー半導体モジュール(30,30’)と、
前記Siスイッチ(14)と前記ワイドバンドギャップ素材のスイッチ(18)とにゲート信号を与えるためのゲートコントローラ(24,24’)と、
前記パワー半導体装置(10)における故障を検知するための計測部(26)とを備え、
前記Siスイッチ(14)および前記ワイドバンドギャップ素材のスイッチ(18)は、電気的に並列に接続され、
前記ゲートコントローラ(24,24’)は、請求項1~7のいずれか1項に記載の方法を実行するように適合されている、パワー半導体装置(10)。 - 前記ゲートコントローラ(24,24’)は、前記Siスイッチ(14)と前記ワイドバンドギャップ素材のスイッチ(18)とに共通のゲート信号を生成するように適合され、
前記Siスイッチ(14)のゲート(20)および前記ワイドバンドギャップ素材のスイッチ(18)のゲート(22)は、前記パワー半導体装置(10)において電気的に互いに相互接続されている、請求項9に記載のパワー半導体装置(10)。 - 前記ゲートコントローラ(24,24’)は、前記Siスイッチ(14)と前記ワイドバンドギャップ素材のスイッチ(18)とで別々のゲート信号を生成するように適合され、
前記Siスイッチ(14)のゲート(20)および前記ワイドバンドギャップ素材のスイッチ(18)のゲートは、前記パワー半導体装置(10)において直流的に互いから分離されている、請求項9に記載のパワー半導体装置(10)。 - 前記Siチップ(12)は、第1筐体(32)を有する第1半導体モジュール(30)内に設けられ、
前記ワイドバンドギャップ素材のチップ(16)は、第2筐体(32’)の中の第2半導体モジュール(30’)内に設けられている、請求項9~11のいずれか1項に記載のパワー半導体装置(10)。 - 前記Siチップ(12)および前記ワイドバンドギャップ素材のチップ(16)は、1つの半導体モジュール(30)および同じ筐体(32)内の少なくとも一方に設けられている、請求項9~11のいずれか1項に記載のパワー半導体装置(10)。
- 前記Siチップ(12)および少なくとも1つの前記ワイドバンドギャップ素材のチップ(16)は、ベースプレート(34)に取り付けられ、
前記ベースプレート(34)の反対側において、前記Siチップ(12)および少なくとも1つの前記ワイドバンドギャップ素材のチップ(16)は、クリップ(48)で電気的に相互接続され、
前記Siチップ(12)を通過する導通経路を形成するための金属プリフォーム(28)は、前記クリップ(48)と前記Siチップ(12)との間に挟まれ、
プレスピン(42)は、前記クリップ(48)の上方に配置されて、前記クリップ(48)および前記金属プリフォーム(28)を押す、請求項9~11または13のいずれか1項に記載のパワー半導体装置(10)。
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