JP6780787B2 - パワーモジュール及び逆導通igbt - Google Patents
パワーモジュール及び逆導通igbt Download PDFInfo
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Description
前記IGBTをオン・オフ駆動するための駆動チップと、を備え、前記パワー半導体チップと前記駆動チップとをパッケージ化したパワーモジュールであって、
前記ダミートレンチゲートをスクリーニング検査に供するために擬似的に形成され得るダミーIGBTのゲートとエミッタとの間に接続された電荷蓄積素子をさらに備えたことを特徴とする。
前記ダミートレンチゲートをスクリーニング検査に供するために擬似的に形成され得るダミーIGBTのゲートとエミッタとの間に接続された電荷蓄積素子をさらに備えたことを特徴とする。
つまり、逆導通IGBTをターンオフスイッチングさせるとき、ゲート電位が所定の値まで低下するまでは、一定の大きさの電流(過剰キャリアの残存)が還流ダイオードに流れ続けることがわかる。これが瞬時起電力の上昇の一因なので、この瞬時起電力の上昇を抑えることができれば、逆導通IGBTのターンオフスイッチング動作時のノイズを抑制し、ひいては、逆導通IGBTの制御性を向上させることができる。
e=IR (1)
e=Ldi/dt (2)
e=(1/C)∫idt(3)
ここで、Iは電流であり、Rは配線抵抗であり、Lは配線インダクタンスであり、Cは配線容量である。
(構成)
以下、第1の実施の形態の構成について、詳細に説明する。
図2に示すように、本実施形態のIPMシステム1は、直流電源2A、2Bと、第1及び第2の駆動・演算回路3A、3Bと、IGBT部4A、4Bと、還流ダイオード部5A、5Bと、インダクタLsと、を含んで構成される。以下、各部の詳細について説明する。
第1及び第2の駆動・演算回路3A、3Bは、例えば、第1の駆動・演算回路3Aがハイサイド駆動用の回路であり、第2の駆動・演算回路3Bがローサイド駆動用の回路である。第1及び第2の駆動・演算回路3A、3Bは、IGBT41A、41Bそれぞれにオンあるいはオフスイッチング動作をさせるためのゲート信号を、外部から供給される駆動信号(制御信号)に応じて直流電源2A、2Bそれぞれの電圧を用いて生成し、IGBT41A、41Bのゲートに供給する。この駆動・演算回路3A、3Bについては、従来技術を用いることができるので説明を割愛する。
ダミーIGBT42Aは、例えば、電界の偏りを低減(電界の局所的な集中を緩和)して耐圧向上を図るために設けられるダミートレンチゲート(図4(a)で示す)に対してスクリーニング検査を行うために擬似的に形成され得るものであり、ダミートレンチゲートの初期不良の有無を確認するためのスクリーニング検査時に所定の電圧が印加されるパッドがゲート(すなわち、ダミートレンチゲート)に接続されている。ダミーIGBT42Aは、コレクタ及びエミッタがIGBT41Aのコレクタ及びエミッタにそれぞれ接続されている。
コンデンサCP1は、ダミートレンチゲートとダミーIGBT42Aのエミッタとの間に配置され、スクリーニング検査後に接続され、瞬時起電力eの発生を抑制するためのものである。ここで、スクリーニング検査後にコンデンサCP1が接続される理由は、スクリーニング検査時にはダミートレンチゲートとベース領域との間に電位差を発生させてダミートレンチゲート絶縁膜に電位ストレスを加え、ダミートレンチゲート絶縁膜が所望の耐圧を有するか否か、等が検査されるが、そのような検査の諸条件に影響を与えることを防止するためである。コンデンサCP1は、ダミートレンチゲートの配線に近いほど瞬時起電力eの発生を抑制する効果が高くなるので、本実施の形態では、IGBT部4Aを形成するチップに内蔵される。コンデンサCP1は、電荷を蓄積する電荷蓄積素子の一例である。
なお、図中のL、C、Rは、配線に寄生(parasitic)する成分を例として示すものである。本実施形態では、一例として、ダミーIGBT42A等のゲートにつながる配線におけるL、C、R寄生成分prs1、エミッタにつながる配線におけるL、C、R寄生成分prs2、及びゲート並びにエミッタからグランドにつながる配線におけるL、C、R寄生成分prs3、prs4について着目している。
次に、以上のような構成を採用するIPMシステム1の動作について説明する。なお、IPMシステム1のハイサイド、ローサイド共に、本実施の形態の特徴的な作用は同一であるので、以下ではハイサイドの動作について詳細に説明する。
図示するように逆導通IGBTを駆動する信号、つまり、逆導通IGBTのゲートに印加する電圧(図3では、駆動信号波形例)が例えば15Vから0Vに低下する間、逆導通IGBTはターンオフ過渡状態にあるが、このターンオフ過渡状態においてダミートレンチゲートの電位が上述した瞬時起電力によって上昇する。コンデンサCP1等を設けた場合、コンデンサCP1等を設けない場合と比較して、ゲートの電位の急峻な上昇が抑制されており、ゼロになるまでの時間が短縮されている。つまり、本実施の形態によれば、コンデンサCP1等を設けることで、逆導通IGBTはコンデンサCP1を設けない場合と比較して完全にターンオフするまでに要する時間、つまり、順方向阻止状態となるまでの時間を短くできるので、制御性が向上されることがわかる。
図4(a)は、逆導通IGBT(IGBT部4A及びダイオード部5Aを含む)のパワー半導体チップを上面から見た図である。図示するように、このパワー半導体チップは、図中のY方向に延伸する複数のトレンチゲート411a、411bを備え、その上部において、それぞれの一部に電気的に接続されるように、ゲート配線412a、412bと、ダミーゲート配線413a、41bと、エミッタ配線414とがX方向に延伸するように形成されている。このパワー半導体チップにおいて、例えば、図中左側の3つのトレンチゲート411aがIGBT部4Aを形成し、右側の3つのトレンチゲート411bが還流ダイオード部5Aを形成する。
上面視でこのような構成を有するパワー半導体チップは、ゲート配線412a及び412b、ダミーゲート配線413a及び413b、ならびにエミッタ配線414が、それぞれ、ゲート端子G、ダミーゲート端子DG、ならびにエミッタ端子E及び補助エミッタ端子AEに接続される。
第1の実施形態では、ダミーIGBT42A、42Bのゲートとエミッタとの間にコンデンサCP1、CP2を設ける場合について説明した。この場合、コンデンサCP1、CP2が電荷を蓄えているが、電荷を蓄えるという観点においては、双方向ダイオードを設けることでも同様の作用、効果を得ることが可能である。以下、双方向ダイオードを採用した実施の形態について説明する。なお、第1の実施形態と同様の構成要素については、同一の参照番号を付し、その詳細な説明を以下では省略する。
上記の第1及び第2の実施の形態では、コンデンサCP1やダイオードD1等に例示される電荷蓄積素子が、スクリーニング検査の完了後に接続、結線される素子である場合について説明した。しかしながら、実際の製品のニーズによっては、よりノイズ抑制効果を高めたいという要望があり、そのためにはスクリーニング検査を要しない、というような要望も考えられる。このような場合には、図4(a)に示した上面において、ダミーゲート配線413a、413bのいずれかと、エミッタ配線414との間に電荷蓄積素子を設けることで、要望に対応することが可能である。
2A、2B 直流電源
3A、3B 駆動・演算回路(駆動チップ)
4A、4B IGBT部
5A、5B 還流ダイオード部
41A、41B IGBT
42A、42B ダミーIGBT
411a、411b トレンチゲート
411c トレンチ
412a、412b ゲート配線
413a、413b ダミーゲート配線
414 エミッタ配線
415 ダミーゲートパッド
416 エミッタパッド
417 ゲートパッド
418 補助エミッタパッド
419 誘電体
420 酸化膜
421 ポリシリコン
422 N+層
423 エミッタ領域
424 Pウェル
CP1、CP2 コンデンサ
D1、D2 双方向ダイオード
D1’、D2’ 逆方向ダイオード
C コレクタ端子
G ゲート端子
GND グランド端子
E エミッタ端子
AE 補助エミッタ端子
Ls インダクタ
Is 絶縁分離領域
prs1乃至prs4 L、C、R寄生成分
Claims (7)
- ダミートレンチゲートを含むトレンチゲート構造のIGBTと、前記IGBTのエミッタの過剰キャリアを前記IGBTのコレクタに戻すための還流ダイオードと、が同一のチップ内に形成されたパワー半導体チップと、
前記IGBTをオン・オフ駆動するための駆動チップと、を備え、前記パワー半導体チップと前記駆動チップとをパッケージ化したパワーモジュールであって、
前記ダミートレンチゲートをスクリーニング検査に供するために擬似的に形成され得るダミーIGBTのゲートとエミッタとの間に接続された電荷蓄積素子をさらに備えたことを特徴とするパワーモジュール。 - 前記電荷蓄積素子は、コンデンサであることを特徴とする請求項1に記載のパワーモジュール。
- 前記電荷蓄積素子は、逆並列接続された少なくとも1組の双方向ダイオードであることを特徴とする請求項1に記載のパワーモジュール。
- 前記電荷蓄積素子は、前記パワー半導体チップ内に形成されるものであることを特徴とする請求項1に記載のパワーモジュール。
- 前記電荷蓄積素子は、スクリーニング検査の完了後に前記ダミーIGBTのゲートとエミッタとの間に電気的に接続されるものであることを特徴とする請求項1に記載のパワーモジュール。
- 前記電荷蓄積素子は、少なくとも1の逆方向ダイオードであることを特徴とする請求項1に記載のパワーモジュール。
- ダミートレンチゲートを含むトレンチゲート構造のIGBTと、前記IGBTのエミッタの過剰キャリアを前記IGBTのコレクタに戻すための還流ダイオードと、が同一のチップ内に形成された逆導通IGBTであって、
前記ダミートレンチゲートをスクリーニング検査に供するために擬似的に形成され得るダミーIGBTのゲートとエミッタとの間に接続された電荷蓄積素子をさらに備えたことを特徴とする逆導通IGBT。
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