JP6602850B2 - プラズマダイシング中のダイシングテープ熱管理のための冷却ペデスタル - Google Patents
プラズマダイシング中のダイシングテープ熱管理のための冷却ペデスタル Download PDFInfo
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- JP6602850B2 JP6602850B2 JP2017513584A JP2017513584A JP6602850B2 JP 6602850 B2 JP6602850 B2 JP 6602850B2 JP 2017513584 A JP2017513584 A JP 2017513584A JP 2017513584 A JP2017513584 A JP 2017513584A JP 6602850 B2 JP6602850 B2 JP 6602850B2
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Laser Beam Processing (AREA)
Description
半導体ウエハ処理においては、シリコン又は他の半導体材料で構成されたウエハ(基板とも称される)の上に、集積回路が形成される。一般的には、集積回路を形成するために、半導電性、導電性、又は絶縁性のいずれかである様々な材料の層が利用される。これらの材料は、集積回路を形成するために、様々な周知のプロセスを使用してドープされ、堆積され、エッチングされる。各ウエハは処理されて、集積回路を包含する多数の個別領域(ダイとして知られている)を形成する。
Claims (13)
- プラズマエッチングチャンバの上部領域内に配置されたプラズマ源と、
前記プラズマ源の下に配置されたカソードアセンブリとを備える、プラズマエッチングチャンバであって、前記カソードアセンブリは、
基板キャリアの裏側の内側部分を支持するための冷却RF駆動チャックと、
前記冷却RF駆動チャックを囲んでいるがそれから絶縁されている冷却RF絶縁支持体であって、前記基板キャリアの前記裏側の外側部分を支持するための冷却RF絶縁支持体とを備え、
前記冷却RF駆動チャックと前記冷却RF絶縁支持体とは共通の熱伝達流体ループを有する、プラズマエッチングチャンバ。 - 前記カソードアセンブリは、前記冷却RF絶縁支持体の開口を通過しているRFロッドであって、前記冷却RF駆動チャックに接触しているが、前記冷却RF絶縁支持体には接触していないRFロッドを更に備える、請求項1に記載のプラズマエッチングチャンバ。
- 前記冷却RF駆動チャック及び前記冷却RF絶縁支持体は、プラズマ処理中に摂氏0度を下回る温度に維持されるよう構成される、請求項1に記載のプラズマエッチングチャンバ。
- プラズマ処理中に前記カソードアセンブリと前記プラズマ源との間に位置付けられるよう構成された、シャドウリングアセンブリを更に備える、請求項1に記載のプラズマエッチングチャンバ。
- 複数の集積回路を備える半導体ウエハをダイシングする方法であって、
裏側を有する基板キャリアによって支持された基板であって、集積回路を覆い、かつ前記基板のストリートを露出させる、パターニングされたマスクを上に有する基板を、プラズマエッチングチャンバ内に導入することと、
前記プラズマエッチングチャンバ内に収納されたカソードアセンブリのRF駆動チャック上に前記基板キャリアの前記裏側の内側部分を支持し、かつ、前記RF駆動チャックを囲んでいるがそれから絶縁されているRF絶縁支持体上に、前記基板キャリアの前記裏側の外側部分を支持することと、
前記RF駆動チャックと前記RF絶縁支持体の両方に共通な熱伝達流体ループを通して冷却流体を流すことにより、前記基板キャリアの前記裏側を、前記RF駆動チャックと前記RF絶縁支持体の両方を用いて冷却することと、
前記基板キャリアの前記裏側の前記冷却を実行しつつ、前記ストリートを通じて前記基板をプラズマエッチングして、前記集積回路を個片化することとを含む、方法。 - 前記プラズマエッチング中に、前記RF駆動チャックと前記RF絶縁支持体の両方は摂氏0度を下回る温度に維持される、請求項5に記載の方法。
- 前記基板キャリアは、外側テープフレームと基板領域を有する支持ダイシングテープとを備え、前記基板キャリアの前記裏側を冷却することは、前記外側テープフレームと前記支持ダイシングテープの前記基板領域とを冷却することを含む、請求項5に記載の方法。
- 前記RF駆動チャックは前記支持ダイシングテープの前記基板領域を冷却し、前記RF絶縁支持体は前記外側テープフレームを冷却する、請求項7に記載の方法。
- 前記支持ダイシングテープの一部分は前記外側テープフレームと前記RF絶縁支持体との間に配置される、請求項8に記載の方法。
- 前記RF駆動チャックは、前記RF絶縁支持体の開口を通過しているRFロッドによって駆動される、請求項5に記載の方法。
- 前記RFロッドは、前記RF駆動チャックに接触しているが、前記RF絶縁支持体には接触していない、請求項10に記載の方法。
- 前記プラズマエッチング中に、前記基板キャリアの表側の一部分はシャドウリングによって保護される、請求項5に記載の方法。
- レーザスクライビングプロセスを用いて前記パターニングされたマスクを形成することを更に含む、請求項5に記載の方法。
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PCT/US2015/030613 WO2015179192A1 (en) | 2014-05-23 | 2015-05-13 | Cooling pedestal for dicing tape thermal management during plasma dicing |
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WO2015179192A1 (en) | 2015-11-26 |
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CN106463392A (zh) | 2017-02-22 |
JP2020038971A (ja) | 2020-03-12 |
KR20170008865A (ko) | 2017-01-24 |
SG11201609745RA (en) | 2016-12-29 |
US9034771B1 (en) | 2015-05-19 |
CN106463392B (zh) | 2019-07-23 |
KR20220123135A (ko) | 2022-09-05 |
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