JP6549552B2 - スイッチング素子の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 239000010410 layer Substances 0.000 claims description 241
- 239000004065 semiconductor Substances 0.000 claims description 118
- 239000000758 substrate Substances 0.000 claims description 85
- 238000005498 polishing Methods 0.000 claims description 38
- 239000002344 surface layer Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 74
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 74
- 238000005530 etching Methods 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 230000007547 defect Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000000059 patterning Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Junction Field-Effect Transistors (AREA)
Description
12 :GaN半導体基板
20 :上部電極
22 :コンタクトプラグ
24 :層間絶縁膜
26 :ゲート電極
28 :ゲート絶縁膜
30 :下部電極
40 :ソース層
42 :ボディ層
42b:チャネル領域
43 :界面
44 :ドリフト層
50 :ストッパ層
52 :ハードマスク
54 :レジスト
62 :凹部
Claims (3)
- スイッチング素子の製造方法であって、
表面に第1n型半導体層が露出しているGaN半導体基板の前記表面に凹部を形成する工程と、
前記凹部内と前記GaN半導体基板の前記表面に、p型のGaN半導体層であるボディ層を成長させる工程と、
前記ボディ層の表層部を除去することによって、前記GaN半導体基板の前記表面に前記第1n型半導体層を露出させるとともに前記凹部内に前記ボディ層を残存させる工程と、
前記ボディ層の前記表層部を除去する工程の後に、前記ボディ層の分布領域内の一部に、前記ボディ層によって前記第1n型半導体層から分離されているとともに前記GaN半導体基板の前記表面に露出する第2n型半導体層を形成する工程と、
前記ボディ層の前記表層部を除去する工程の後に、前記GaN半導体基板の前記表面の前記第1n型半導体層と前記第2n型半導体層の間で前記ボディ層が露出する範囲内に、前記ボディ層に対して絶縁膜を介して対向するゲート電極を形成する工程、
を有し、
前記ボディ層を成長させる前記工程の前に、前記GaN半導体基板の前記表面にストッパ層を形成し、
前記ボディ層を成長させる前記工程では、前記ストッパ層を覆うように前記ボディ層を成長させ、
前記ボディ層の前記表層部を除去する前記工程が、前記ボディ層の研磨効率よりも前記ストッパ層の研磨効率が低い研磨方法によって前記ストッパ層が露出するまで前記ボディ層を研磨する第1研磨工程と、前記ストッパ層が除去されるまで前記ボディ層と前記ストッパ層を研磨する第2研磨工程を有する、
製造方法。 - 前記凹部を形成する前記工程では、前記凹部の側面が、前記ゲート電極の下部となる位置において、前記GaN半導体基板の前記表面に対する角度が80°以上90°以下である小傾斜部を有するように前記凹部を形成し、
前記ボディ層の前記表層部を除去する前記工程では、前記GaN半導体基板の前記表面を研磨し、前記小傾斜部が前記GaN半導体基板の前記表面に位置する状態で研磨を停止する、
請求項1の製造方法。 - 前記凹部を形成する前記工程では、前記凹部の側面が、前記ゲート電極の下部となる位置において、前記凹部の端部から遠ざかるに従って前記凹部の深さが深くなるように傾斜するとともに前記GaN半導体基板の前記表面に対する角度が60°未満である大傾斜部を有するように前記凹部を形成する請求項1または2の製造方法。
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JP2016253957A JP6549552B2 (ja) | 2016-12-27 | 2016-12-27 | スイッチング素子の製造方法 |
US15/842,249 US10242869B2 (en) | 2016-12-27 | 2017-12-14 | Method of manufacturing switching element having gallium nitride substrate |
CN201711351298.0A CN108242399B (zh) | 2016-12-27 | 2017-12-15 | 开关元件的制造方法 |
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JP6616280B2 (ja) | 2016-12-27 | 2019-12-04 | トヨタ自動車株式会社 | スイッチング素子 |
JP7040354B2 (ja) * | 2018-08-08 | 2022-03-23 | 株式会社デンソー | 半導体装置とその製造方法 |
JP7115145B2 (ja) * | 2018-08-29 | 2022-08-09 | 株式会社デンソー | 半導体装置の製造方法 |
JP7139820B2 (ja) * | 2018-09-20 | 2022-09-21 | 株式会社デンソー | 窒化物半導体装置とその製造方法 |
JP7052659B2 (ja) * | 2018-09-20 | 2022-04-12 | 株式会社デンソー | 窒化物半導体装置とその製造方法 |
CN110634747A (zh) * | 2019-10-21 | 2019-12-31 | 南京集芯光电技术研究院有限公司 | 利用MBE再生长p-GaN的单栅结构GaN-JFET器件的方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528058A (en) | 1986-03-21 | 1996-06-18 | Advanced Power Technology, Inc. | IGBT device with platinum lifetime control and reduced gaw |
JP2000106428A (ja) | 1998-09-28 | 2000-04-11 | Toshiba Corp | 半導体装置 |
US6365932B1 (en) | 1999-08-20 | 2002-04-02 | Denso Corporation | Power MOS transistor |
JP4645034B2 (ja) * | 2003-02-06 | 2011-03-09 | 株式会社豊田中央研究所 | Iii族窒化物半導体を有する半導体素子 |
JP2004319964A (ja) | 2003-03-28 | 2004-11-11 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP5368140B2 (ja) | 2003-03-28 | 2013-12-18 | 三菱電機株式会社 | SiCを用いた縦型MOSFETの製造方法 |
JP4929677B2 (ja) * | 2005-10-21 | 2012-05-09 | 住友電気工業株式会社 | Iii族窒化物半導体素子の製造方法 |
JP2007129115A (ja) * | 2005-11-07 | 2007-05-24 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法 |
JP2007281086A (ja) * | 2006-04-04 | 2007-10-25 | Sumitomo Electric Ind Ltd | 絶縁ゲートバイポーラトランジスタ、および絶縁ゲートバイポーラトランジスタを作製する方法 |
JP4876927B2 (ja) * | 2007-01-22 | 2012-02-15 | 住友電気工業株式会社 | 半導体デバイスを形成する方法 |
US7629616B2 (en) | 2007-02-28 | 2009-12-08 | Cree, Inc. | Silicon carbide self-aligned epitaxial MOSFET for high powered device applications |
JP2009091175A (ja) * | 2007-10-04 | 2009-04-30 | Sumitomo Electric Ind Ltd | GaNエピタキシャル基板、半導体デバイス、GaNエピタキシャル基板及び半導体デバイスの製造方法 |
US8815744B2 (en) * | 2008-04-24 | 2014-08-26 | Fairchild Semiconductor Corporation | Technique for controlling trench profile in semiconductor structures |
JP5234927B2 (ja) * | 2008-05-22 | 2013-07-10 | 株式会社豊田中央研究所 | 半導体装置の製造方法 |
CN102084512B (zh) * | 2008-06-13 | 2014-06-04 | 株式会社船井电机新应用技术研究所 | 开关元件 |
JP5682098B2 (ja) * | 2008-09-09 | 2015-03-11 | 住友電気工業株式会社 | ウェル構造,その形成方法および半導体デバイス |
US8786010B2 (en) | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
JP5524905B2 (ja) | 2011-05-17 | 2014-06-18 | 株式会社神戸製鋼所 | パワー半導体素子用Al合金膜 |
US8999794B2 (en) * | 2011-07-14 | 2015-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned source and drain structures and method of manufacturing same |
US8963218B2 (en) | 2011-09-30 | 2015-02-24 | Maxim Integrated Products, Inc. | Dual-gate VDMOS device |
CN103426907B (zh) * | 2012-05-23 | 2016-09-21 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US9070765B2 (en) | 2013-02-06 | 2015-06-30 | Infineon Technologies Ag | Semiconductor device with low on resistance and high breakdown voltage |
WO2014203317A1 (ja) | 2013-06-17 | 2014-12-24 | 株式会社日立製作所 | 半導体装置およびその製造方法、並びに電力変換装置 |
KR20150014641A (ko) * | 2013-07-30 | 2015-02-09 | 서울반도체 주식회사 | 질화갈륨계 다이오드 및 그 제조 방법 |
CN104465383B (zh) * | 2013-09-23 | 2018-03-06 | 中芯国际集成电路制造(上海)有限公司 | 降低mos晶体管短沟道效应的方法 |
US9111919B2 (en) | 2013-10-03 | 2015-08-18 | Cree, Inc. | Field effect device with enhanced gate dielectric structure |
US9496149B2 (en) * | 2014-04-14 | 2016-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods for manufacturing the same |
JP2016039263A (ja) * | 2014-08-07 | 2016-03-22 | 株式会社東芝 | 半導体装置の製造方法 |
JP2017126610A (ja) * | 2016-01-12 | 2017-07-20 | トヨタ自動車株式会社 | スイッチング素子 |
JP6616280B2 (ja) * | 2016-12-27 | 2019-12-04 | トヨタ自動車株式会社 | スイッチング素子 |
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