CN102084512B - 开关元件 - Google Patents
开关元件 Download PDFInfo
- Publication number
- CN102084512B CN102084512B CN200880129794.4A CN200880129794A CN102084512B CN 102084512 B CN102084512 B CN 102084512B CN 200880129794 A CN200880129794 A CN 200880129794A CN 102084512 B CN102084512 B CN 102084512B
- Authority
- CN
- China
- Prior art keywords
- electrode
- insulator
- switch element
- dielectric substrate
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims abstract description 142
- 239000012212 insulator Substances 0.000 claims description 199
- 238000003475 lamination Methods 0.000 abstract description 12
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 67
- 238000004519 manufacturing process Methods 0.000 description 62
- 230000004048 modification Effects 0.000 description 60
- 238000012986 modification Methods 0.000 description 60
- 239000000463 material Substances 0.000 description 39
- 238000000151 deposition Methods 0.000 description 23
- 238000005516 engineering process Methods 0.000 description 21
- 230000008021 deposition Effects 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000009413 insulation Methods 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 230000005684 electric field Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000012071 phase Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000000197 pyrolysis Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 235000003332 Ilex aquifolium Nutrition 0.000 description 1
- 241000209027 Ilex aquifolium Species 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
Landscapes
- Semiconductor Memories (AREA)
- Manufacture Of Switches (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2008/060914 WO2009150751A1 (ja) | 2008-06-13 | 2008-06-13 | スイッチング素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102084512A CN102084512A (zh) | 2011-06-01 |
CN102084512B true CN102084512B (zh) | 2014-06-04 |
Family
ID=41416472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880129794.4A Expired - Fee Related CN102084512B (zh) | 2008-06-13 | 2008-06-13 | 开关元件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8653912B2 (zh) |
CN (1) | CN102084512B (zh) |
WO (1) | WO2009150751A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4919146B2 (ja) * | 2005-09-27 | 2012-04-18 | 独立行政法人産業技術総合研究所 | スイッチング素子 |
JP5526341B2 (ja) * | 2010-02-25 | 2014-06-18 | 独立行政法人産業技術総合研究所 | スイッチング素子 |
JP5942349B2 (ja) * | 2011-07-07 | 2016-06-29 | セイコーエプソン株式会社 | センサー装置 |
US20140301121A1 (en) * | 2013-04-05 | 2014-10-09 | Anam Nanotechnology, Inc. | Tunneling Electric Contacts And Related Methods, Systems And Applications |
US10396175B2 (en) | 2014-11-25 | 2019-08-27 | University Of Kentucky Research Foundation | Nanogaps on atomically thin materials as non-volatile read/writable memory devices |
JP6549552B2 (ja) * | 2016-12-27 | 2019-07-24 | トヨタ自動車株式会社 | スイッチング素子の製造方法 |
FR3141284A1 (fr) * | 2022-10-25 | 2024-04-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif mémoire résistive et procédé de réalisation |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0519295A (ja) | 1991-07-12 | 1993-01-29 | Matsushita Electric Ind Co Ltd | 非線形抵抗素子 |
US5367136A (en) * | 1993-07-26 | 1994-11-22 | Westinghouse Electric Corp. | Non-contact two position microeletronic cantilever switch |
JP3595744B2 (ja) | 1999-02-26 | 2004-12-02 | キヤノン株式会社 | 電子放出素子、電子源及び画像形成装置 |
US6534839B1 (en) * | 1999-12-23 | 2003-03-18 | Texas Instruments Incorporated | Nanomechanical switches and circuits |
US6384353B1 (en) * | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
CN100448049C (zh) | 2001-09-25 | 2008-12-31 | 独立行政法人科学技术振兴机构 | 使用固体电解质的电气元件和存储装置及其制造方法 |
CN100334735C (zh) | 2002-04-30 | 2007-08-29 | 独立行政法人科学技术振兴机构 | 固体电解质开关元件及使用其的fpga、存储元件及其制造方法 |
JP3864229B2 (ja) | 2003-08-29 | 2006-12-27 | 独立行政法人産業技術総合研究所 | ナノギャップ電極の製造方法及び該方法により製造されたナノギャップ電極を有する素子 |
KR100565174B1 (ko) * | 2003-11-20 | 2006-03-30 | 한국전자통신연구원 | 나노갭 전극소자의 제작 방법 |
JP3864232B2 (ja) | 2003-12-10 | 2006-12-27 | 独立行政法人産業技術総合研究所 | ナノギャップ電極の製造方法及び該方法により製造されたナノギャップ電極を用いた素子 |
US7741832B2 (en) * | 2004-06-07 | 2010-06-22 | General Electric Company | Micro-electromechanical system (MEMS) based current and magnetic field sensor using tunneling current sensing |
JP2006128438A (ja) | 2004-10-29 | 2006-05-18 | National Institute Of Advanced Industrial & Technology | ナノギャップ電極の形成方法及びこれによって得られたナノギャップ電極並びに該電極を備えた素子 |
JP4489651B2 (ja) * | 2005-07-22 | 2010-06-23 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JP4919146B2 (ja) * | 2005-09-27 | 2012-04-18 | 独立行政法人産業技術総合研究所 | スイッチング素子 |
WO2007069725A1 (ja) | 2005-12-15 | 2007-06-21 | Nec Corporation | スイッチング素子およびその製造方法 |
JP4446054B2 (ja) * | 2007-03-23 | 2010-04-07 | 独立行政法人産業技術総合研究所 | 不揮発性記憶素子 |
JP2008311449A (ja) * | 2007-06-15 | 2008-12-25 | National Institute Of Advanced Industrial & Technology | シリコンによる2端子抵抗スイッチ素子及び半導体デバイス |
-
2008
- 2008-06-13 US US12/997,316 patent/US8653912B2/en not_active Expired - Fee Related
- 2008-06-13 CN CN200880129794.4A patent/CN102084512B/zh not_active Expired - Fee Related
- 2008-06-13 WO PCT/JP2008/060914 patent/WO2009150751A1/ja active Application Filing
Non-Patent Citations (6)
Title |
---|
JP特开2004-259748A 2004.09.16 |
JP特开2005-175164A 2005.06.30 |
JP特开2005-79335A 2005.03.24 |
JP特开2006-128438A 2006.05.18 |
JP特开2007-123828A 2007.05.17 |
JP特开平5-19295A 1993.01.29 |
Also Published As
Publication number | Publication date |
---|---|
CN102084512A (zh) | 2011-06-01 |
US8653912B2 (en) | 2014-02-18 |
US20110108399A1 (en) | 2011-05-12 |
WO2009150751A1 (ja) | 2009-12-17 |
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C06 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160201 Address after: Tokyo, Japan, Japan Patentee after: Independent Administrative Corporation Industrial Comprehansive Technologles Institute Patentee after: Funai Electric Co., Ltd. Address before: Japan Osaka Patentee before: Funai Electric Advanced Applied Technology Research Institute Inc. Patentee before: Independent Administrative Corporation Industrial Comprehansive Technologles Institute Patentee before: Funai Electric Co., Ltd. Effective date of registration: 20160201 Address after: Tokyo, Japan, Japan Patentee after: Independent Administrative Corporation Industrial Comprehansive Technologles Institute Patentee after: Funai Electric Co., Ltd. Address before: Japan Osaka Patentee before: Funai Electric Advanced Applied Technology Research Institute Inc. Patentee before: Independent Administrative Corporation Industrial Comprehansive Technologles Institute Patentee before: Funai Electric Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140604 Termination date: 20190613 |