JP6453688B2 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
- Publication number
- JP6453688B2 JP6453688B2 JP2015065995A JP2015065995A JP6453688B2 JP 6453688 B2 JP6453688 B2 JP 6453688B2 JP 2015065995 A JP2015065995 A JP 2015065995A JP 2015065995 A JP2015065995 A JP 2015065995A JP 6453688 B2 JP6453688 B2 JP 6453688B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- liquid film
- processing
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 433
- 238000003672 processing method Methods 0.000 title claims description 26
- 239000007788 liquid Substances 0.000 claims description 603
- 238000010438 heat treatment Methods 0.000 claims description 69
- 238000009835 boiling Methods 0.000 claims description 37
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 230000005484 gravity Effects 0.000 claims description 12
- 230000008016 vaporization Effects 0.000 claims description 12
- 238000009834 vaporization Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000003860 storage Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/106—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by boiling the liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
5 加熱部
6,6a〜6c 処理液供給部
9 基板
31 基板保持部
33 基板回転機構
61,61a 第1ノズル
62,62a 第2ノズル
71 第1液膜
72 第2液膜
73 (第1液膜の)上面
91 (基板の)上面
92 (基板の)下面
95 異物
J1 中心軸
S11〜S14 ステップ
Claims (19)
- 基板を処理する基板処理装置であって、
水平状態に基板を保持する基板保持部と、
前記基板の上面上に第1処理液および前記第1処理液よりも比重が小さく沸点が高い第2処理液を供給し、前記第1処理液の液膜である第1液膜、および、前記第1液膜の上面を覆う前記第2処理液の液膜である第2液膜を前記基板の前記上面上に形成する処理液供給部と、
を備え、
前記第1処理液の沸点以上かつ前記第2処理液の沸点よりも低い温度にて前記第1液膜の加熱が行われることにより、前記第2液膜と前記基板との間にて気化した前記第1処理液により、前記基板の前記上面上の異物を前記基板の前記上面から剥離させて前記第2液膜内へと移動させることを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置であって、
上下方向を向く中心軸を中心として前記基板を前記基板保持部と共に回転させることにより、前記第2液膜を前記基板の前記上面上から除去する基板回転機構をさらに備えることを特徴とする基板処理装置。 - 請求項1または2に記載の基板処理装置であって、
前記第1処理液の気化と並行して、前記処理液供給部から前記第2液膜に前記第2処理液が継続的に供給されることを特徴とする基板処理装置。 - 請求項1ないし3のいずれかに記載の基板処理装置であって、
前記第1処理液の気化と並行して、前記処理液供給部から前記第1液膜に前記第1処理液が継続的に供給されることを特徴とする基板処理装置。 - 請求項1ないし4のいずれかに記載の基板処理装置であって、
前記基板を下面側から加熱することにより前記第1液膜の前記加熱を行う加熱部をさらに備えることを特徴とする基板処理装置。 - 請求項1ないし5のいずれかに記載の基板処理装置であって、
前記第1処理液の沸点よりも高くかつ前記第2処理液の沸点よりも低い温度にて前記処理液供給部から前記基板上に供給された前記第2処理液により、前記第1液膜の前記加熱が行われることを特徴とする基板処理装置。 - 請求項1ないし6のいずれかに記載の基板処理装置であって、
前記処理液供給部が、
前記第1処理液を前記基板の前記上面に向けて吐出する第1ノズルと、
前記第2処理液を前記基板の前記上面に向けて吐出する第2ノズルと、
を備え、
前記第2液膜が形成された状態で、前記第1ノズルの先端が、前記基板の前記上面と前記第2液膜の上面との間に位置することを特徴とする基板処理装置。 - 請求項1ないし7のいずれかに記載の基板処理装置であって、
前記第1液膜が前記基板の前記上面全体を覆い、
前記第2液膜が前記第1液膜の前記上面全体を覆うことを特徴とする基板処理装置。 - 請求項1ないし8のいずれかに記載の基板処理装置であって、
前記第1処理液がハイドロフルオロエーテルであり、前記第2処理液が純水であることを特徴とする基板処理装置。 - 請求項1ないし8のいずれかに記載の基板処理装置であって、
前記第1処理液がハイドロフルオロエーテルであり、前記第2処理液がイソプロピルアルコールであることを特徴とする基板処理装置。 - 基板を処理する基板処理方法であって、
a)水平状態に保持された基板の上面上に第1処理液および前記第1処理液よりも比重が小さく沸点が高い第2処理液を供給し、前記第1処理液の液膜である第1液膜、および、前記第1液膜の上面を覆う前記第2処理液の液膜である第2液膜を前記基板の前記上面上に形成する工程と、
b)前記第1処理液の沸点以上かつ前記第2処理液の沸点よりも低い温度にて前記第1液膜の加熱を行うことにより、前記第2液膜と前記基板との間にて気化した前記第1処理液により、前記基板の前記上面上の異物を前記基板の前記上面から剥離させて前記第2液膜内へと移動させる工程と、
を備えることを特徴とする基板処理方法。 - 請求項11に記載の基板処理方法であって、
前記b)工程よりも後に、上下方向を向く中心軸を中心として前記基板を回転させることにより、前記第2液膜を前記基板の前記上面上から除去する工程をさらに備えることを特徴とする基板処理方法。 - 請求項11または12に記載の基板処理方法であって、
前記b)工程と並行して、前記第2液膜に前記第2処理液が継続的に供給されることを特徴とする基板処理方法。 - 請求項11ないし13のいずれかに記載の基板処理方法であって、
前記b)工程と並行して、前記第1液膜に前記第1処理液が継続的に供給されることを特徴とする基板処理方法。 - 請求項11ないし14のいずれかに記載の基板処理方法であって、
前記b)工程において、前記基板を下面側から加熱することにより前記第1液膜の前記加熱が行われることを特徴とする基板処理方法。 - 請求項11ないし15のいずれかに記載の基板処理方法であって、
前記第1処理液の沸点よりも高くかつ前記第2処理液の沸点よりも低い温度にて前記基板上に供給された前記第2処理液により、前記b)工程における前記第1液膜の前記加熱が行われることを特徴とする基板処理方法。 - 請求項11ないし16のいずれかに記載の基板処理方法であって、
前記第1液膜が前記基板の前記上面全体を覆い、
前記第2液膜が前記第1液膜の前記上面全体を覆うことを特徴とする基板処理方法。 - 請求項11ないし17のいずれかに記載の基板処理方法であって、
前記第1処理液がハイドロフルオロエーテルであり、前記第2処理液が純水であることを特徴とする基板処理方法。 - 請求項11ないし17のいずれかに記載の基板処理方法であって、
前記第1処理液がハイドロフルオロエーテルであり、前記第2処理液がイソプロピルアルコールであることを特徴とする基板処理方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015065995A JP6453688B2 (ja) | 2015-03-27 | 2015-03-27 | 基板処理装置および基板処理方法 |
US15/558,042 US10549322B2 (en) | 2015-03-27 | 2016-03-16 | Substrate processing apparatus and substrate processing method |
PCT/JP2016/058288 WO2016158410A1 (ja) | 2015-03-27 | 2016-03-16 | 基板処理装置および基板処理方法 |
KR1020177025399A KR101976968B1 (ko) | 2015-03-27 | 2016-03-16 | 기판 처리 장치 및 기판 처리 방법 |
CN201680014580.7A CN107408502B (zh) | 2015-03-27 | 2016-03-16 | 基板处理装置和基板处理方法 |
TW105108989A TWI644343B (zh) | 2015-03-27 | 2016-03-23 | 基板處理裝置及基板處理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015065995A JP6453688B2 (ja) | 2015-03-27 | 2015-03-27 | 基板処理装置および基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016186971A JP2016186971A (ja) | 2016-10-27 |
JP6453688B2 true JP6453688B2 (ja) | 2019-01-16 |
Family
ID=57004483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015065995A Active JP6453688B2 (ja) | 2015-03-27 | 2015-03-27 | 基板処理装置および基板処理方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10549322B2 (ja) |
JP (1) | JP6453688B2 (ja) |
KR (1) | KR101976968B1 (ja) |
CN (1) | CN107408502B (ja) |
TW (1) | TWI644343B (ja) |
WO (1) | WO2016158410A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019112042A1 (ja) * | 2017-12-07 | 2019-06-13 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体 |
JP7016265B2 (ja) * | 2018-01-11 | 2022-02-04 | 株式会社Screenホールディングス | 基板処理方法及び基板処理装置 |
JP7045196B2 (ja) * | 2018-01-15 | 2022-03-31 | 東京応化工業株式会社 | 基板処理装置及び基板処理方法 |
JP7175118B2 (ja) * | 2018-07-25 | 2022-11-18 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
JP7265874B2 (ja) | 2019-01-28 | 2023-04-27 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
TWI691358B (zh) * | 2019-03-04 | 2020-04-21 | 日商長瀨過濾器股份有限公司 | 過濾器洗淨方法及過濾器洗淨裝置 |
JP7301662B2 (ja) * | 2019-07-29 | 2023-07-03 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7427475B2 (ja) * | 2020-02-28 | 2024-02-05 | 株式会社Screenホールディングス | 基板処理方法 |
US11550223B2 (en) | 2020-05-25 | 2023-01-10 | Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. | Coating method and coating system |
CN113448173B (zh) * | 2020-05-25 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | 一种涂布方法和涂布*** |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001246337A (ja) * | 2000-03-09 | 2001-09-11 | Mitsubishi Electric Corp | 微細孔を有する部品の湿式表面処理方法 |
JP3892749B2 (ja) * | 2002-03-29 | 2007-03-14 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP2006181426A (ja) * | 2004-12-27 | 2006-07-13 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP4767767B2 (ja) * | 2006-06-19 | 2011-09-07 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
KR20080008614A (ko) | 2006-07-20 | 2008-01-24 | 황진찬 | 숙성 전체 인삼 조성물, 숙성 인삼 몸통 조성물, 숙성 미삼조성물 및 숙성 복합 인삼 조성물 및 그 각각의 제조방법. |
JP4960075B2 (ja) * | 2006-12-18 | 2012-06-27 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP4886544B2 (ja) | 2007-02-09 | 2012-02-29 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP4803821B2 (ja) * | 2007-03-23 | 2011-10-26 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP4994990B2 (ja) * | 2007-08-03 | 2012-08-08 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、プログラム、記録媒体および置換剤 |
JP5413016B2 (ja) | 2008-07-31 | 2014-02-12 | 東京エレクトロン株式会社 | 基板の洗浄方法、基板の洗浄装置及び記憶媒体 |
JP5385628B2 (ja) | 2009-02-13 | 2014-01-08 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP5234985B2 (ja) | 2009-03-31 | 2013-07-10 | 大日本スクリーン製造株式会社 | 基板処理装置及び基板処理方法 |
JP5449953B2 (ja) * | 2009-09-29 | 2014-03-19 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP2011121009A (ja) | 2009-12-11 | 2011-06-23 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP5254308B2 (ja) | 2010-12-27 | 2013-08-07 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及びその液処理方法を実行させるためのプログラムを記録した記録媒体 |
TWI480937B (zh) | 2011-01-06 | 2015-04-11 | Screen Holdings Co Ltd | 基板處理方法及基板處理裝置 |
US20120260947A1 (en) | 2011-04-12 | 2012-10-18 | Satoshi Kaneko | Substrate cleaning apparatus, substrate cleaning method, and computer-readable recording medium having substrate cleaning program recorded therein |
JP6080291B2 (ja) | 2012-09-28 | 2017-02-15 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6131162B2 (ja) * | 2012-11-08 | 2017-05-17 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
-
2015
- 2015-03-27 JP JP2015065995A patent/JP6453688B2/ja active Active
-
2016
- 2016-03-16 WO PCT/JP2016/058288 patent/WO2016158410A1/ja active Application Filing
- 2016-03-16 CN CN201680014580.7A patent/CN107408502B/zh active Active
- 2016-03-16 US US15/558,042 patent/US10549322B2/en active Active
- 2016-03-16 KR KR1020177025399A patent/KR101976968B1/ko active IP Right Grant
- 2016-03-23 TW TW105108989A patent/TWI644343B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN107408502B (zh) | 2020-10-16 |
KR20170116120A (ko) | 2017-10-18 |
US20180068876A1 (en) | 2018-03-08 |
US10549322B2 (en) | 2020-02-04 |
JP2016186971A (ja) | 2016-10-27 |
TWI644343B (zh) | 2018-12-11 |
WO2016158410A1 (ja) | 2016-10-06 |
KR101976968B1 (ko) | 2019-05-09 |
CN107408502A (zh) | 2017-11-28 |
TW201707059A (zh) | 2017-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6453688B2 (ja) | 基板処理装置および基板処理方法 | |
TWI698906B (zh) | 基板處理方法以及基板處理裝置 | |
JP4870837B2 (ja) | 基板乾燥装置及びその方法 | |
KR102381781B1 (ko) | 기판 처리 장치 | |
JP5889691B2 (ja) | 基板処理装置および基板処理方法 | |
TWI547765B (zh) | 基板處理方法及基板處理裝置 | |
JP5926086B2 (ja) | 基板処理装置および基板処理方法 | |
JP2010027816A (ja) | 基板処理方法および基板処理装置 | |
JP2009212301A (ja) | 基板処理方法および基板処理装置 | |
JP6449097B2 (ja) | 基板処理方法及び基板処理装置並びに基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 | |
TW201934211A (zh) | 基板處理方法及基板處理裝置 | |
JP2009021409A (ja) | 凍結処理装置、凍結処理方法および基板処理装置 | |
JP2008034428A (ja) | 基板処理装置および基板処理方法 | |
TWI672738B (zh) | 基板處理方法及基板處理裝置 | |
JP2009224692A (ja) | 基板処理装置および基板処理方法 | |
TWI721495B (zh) | 基板處理裝置、處理液以及基板處理方法 | |
JP2009295910A (ja) | 基板処理方法 | |
JP6672091B2 (ja) | 基板処理方法および基板処理装置 | |
WO2020105376A1 (ja) | 基板処理方法および基板処理装置 | |
JP2014187253A (ja) | 基板処理装置および基板処理方法 | |
JP7265874B2 (ja) | 基板処理方法および基板処理装置 | |
JP2022178469A (ja) | 基板処理方法および基板処理装置 | |
JP2013021246A (ja) | 基板処理装置および基板処理方法 | |
JP6529798B2 (ja) | 基板処理装置および基板処理方法 | |
TW201913792A (zh) | 基板處理裝置以及基板處理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181115 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181213 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6453688 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |