JP6672091B2 - 基板処理方法および基板処理装置 - Google Patents
基板処理方法および基板処理装置 Download PDFInfo
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/30604—Chemical etching
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- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
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Description
6 ガス噴射部
9 基板
31 基板保持部
33 基板回転機構
53 第3ノズル
61 ガスノズル
71 支持アーム
72 アーム移動機構
91 (基板の)上面
93 周縁領域
94 内側領域
J1 中心軸
S11〜S19 ステップ
Claims (12)
- 基板を処理する基板処理方法であって、
a)上面に構造体が形成された基板を水平状態で保持する工程と、
b)前記基板の前記上面に処理液を供給して前記処理液の膜である塗布膜を前記上面上に形成し、前記構造体における隙間を前記処理液で満たす工程と、
c)前記b)工程よりも後に、上下方向を向く中心軸を中心として前記基板を回転させた状態で、前記基板の前記上面の周縁領域に剥離液を付与することにより、前記塗布膜のうち前記周縁領域上の部位を前記基板から剥離させる工程と、
d)前記b)工程よりも後に、前記基板の前記上面の前記周縁領域と前記周縁領域の内側の内側領域との境界部に向けてガスを噴射することにより、前記内側領域上の塗布膜の外縁部の固化を促進する工程と、
を備えることを特徴とする基板処理方法。 - 請求項1に記載の基板処理方法であって、
前記a)工程と前記b)工程との間において、前記基板の前記上面に溶剤を供給して前記溶剤の膜である溶剤膜を前記上面上に形成し、前記構造体における前記隙間を前記溶剤で満たす工程をさらに備え、
前記b)工程が、
b1)前記溶剤膜に前記処理液を供給し、前記構造体における前記隙間に存在する前記溶剤を前記処理液で置換する工程と、
b2)前記中心軸を中心として前記基板を回転させ、前記基板上から前記溶剤を除去する工程と、
を備えることを特徴とする基板処理方法。 - 請求項1または2に記載の基板処理方法であって、
前記d)工程において噴射される前記ガスが、常温よりも高い温度に予め加熱されていることを特徴とする基板処理方法。 - 請求項1ないし3のいずれかに記載の基板処理方法であって、
前記c)工程において、前記基板の上方から前記基板の前記上面の前記周縁領域に向けて前記剥離液が吐出されることを特徴とする基板処理方法。 - 請求項1ないし4のいずれかに記載の基板処理方法であって、
前記d)工程が、前記c)工程と並行して行われることを特徴とする基板処理方法。 - 請求項1ないし5のいずれかに記載の基板処理方法であって、
前記b)工程と前記c)工程との間に、前記塗布膜の固化を促進する工程をさらに備えることを特徴とする基板処理方法。 - 基板を処理する基板処理装置であって、
上面に構造体が形成された基板を水平状態で保持する基板保持部と、
上下方向を向く中心軸を中心として前記基板を前記基板保持部と共に回転する基板回転機構と、
前記基板の前記上面に処理液を供給して前記処理液の膜である塗布膜を前記上面上に形成し、前記構造体における隙間を前記処理液で満たす液供給部と、
前記基板の前記上面の周縁領域に剥離液を付与することにより、前記塗布膜のうち前記周縁領域上の部位を前記基板から剥離させる剥離液付与部と、
前記基板の前記上面の前記周縁領域と前記周縁領域の内側の内側領域との境界部に向けてガスを噴射することにより、前記内側領域上の塗布膜の外縁部の固化を促進するガス噴射部と、
を備えることを特徴とする基板処理装置。 - 請求項7に記載の基板処理装置であって、
前記ガス噴射部から噴射される前記ガスが、常温よりも高い温度に予め加熱されていることを特徴とする基板処理装置。 - 請求項7または8に記載の基板処理装置であって、
前記剥離液付与部が、前記基板の上方に配置されて前記基板の前記上面の前記周縁領域に向けて前記剥離液を吐出する剥離液ノズルを備えることを特徴とする基板処理装置。 - 請求項9に記載の基板処理装置であって、
前記ガス噴射部が、前記基板の上方に配置されて前記境界部に向けて前記ガスを噴射するガスノズルを備え、
前記基板処理装置が、
前記剥離液ノズルおよび前記ガスノズルを支持する支持アームと、
前記支持アームを移動するアーム移動機構と、
をさらに備えることを特徴とする基板処理装置。 - 請求項10に記載の基板処理装置であって、
前記ガスノズルが、前記剥離液ノズルよりも前記基板保持部の回転方向前側に位置することを特徴とする基板処理装置。 - 請求項7ないし11のいずれかに記載の基板処理装置であって、
前記ガス噴射部からの前記ガスの噴射が、前記剥離液付与部からの前記剥離液の付与と並行して行われることを特徴とする基板処理装置。
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JP2016125628A JP6672091B2 (ja) | 2016-06-24 | 2016-06-24 | 基板処理方法および基板処理装置 |
US16/302,375 US10950466B2 (en) | 2016-06-24 | 2017-05-29 | Substrate processing method and substrate processing apparatus |
KR1020187033328A KR102196823B1 (ko) | 2016-06-24 | 2017-05-29 | 기판 처리 방법 및 기판 처리 장치 |
PCT/JP2017/019904 WO2017221639A1 (ja) | 2016-06-24 | 2017-05-29 | 基板処理方法および基板処理装置 |
CN201780034148.9A CN109219865B (zh) | 2016-06-24 | 2017-05-29 | 基板处理方法及基板处理装置 |
TW106119271A TWI631601B (zh) | 2016-06-24 | 2017-06-09 | 基板處理方法及基板處理裝置 |
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KR (1) | KR102196823B1 (ja) |
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US9378988B2 (en) | 2011-07-20 | 2016-06-28 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method using processing solution |
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