JP6377380B2 - 表示装置 - Google Patents
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- Publication number
- JP6377380B2 JP6377380B2 JP2014061072A JP2014061072A JP6377380B2 JP 6377380 B2 JP6377380 B2 JP 6377380B2 JP 2014061072 A JP2014061072 A JP 2014061072A JP 2014061072 A JP2014061072 A JP 2014061072A JP 6377380 B2 JP6377380 B2 JP 6377380B2
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- Prior art keywords
- layer
- conductive layer
- electrode layer
- conductive
- display device
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- 239000004065 semiconductor Substances 0.000 claims description 52
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
本実施の形態では、本発明の一態様の表示装置について、図1乃至図4を用いて説明を行う。
図1(A)、(B)に示す表示装置の作製方法について、図2乃至図4を用いて以下説明を行う。
本実施の形態においては、実施の形態1に示す表示装置の変形例について、図5乃至図7を用いて以下説明を行う。なお、実施の形態1に示す機能と同様の箇所については、同様の符号を付し、その詳細な説明は省略する。
図5(A)、(B)に示す表示装置の作製方法について、図6及び図7を用いて以下説明を行う。
本実施の形態においては、実施の形態1に示す表示装置の変形例について、図8を用いて以下説明を行う。
本実施の形態では、本発明の一態様の表示装置について、図9を用いて説明を行う。なお、実施の形態1及び実施の形態2に示す機能と同様の箇所については、同様の符号を付し、その詳細な説明は省略する。
本実施の形態では、本発明の一態様の表示装置を用いることのできる表示モジュール及び電子機器について、図10及び図11を用いて説明を行う。
104a 導電層
104b 導電層
106a 絶縁層
106b 絶縁層
108 半導体層
109a 導電層
109b 導電層
109c 導電層
110a_1 導電層
110a_2 導電層
110a_3 導電層
110b_1 導電層
110b_2 導電層
110b_3 導電層
110c 導電層
110c_1 導電層
110c_3 導電層
112 絶縁層
114 有色層
116 絶縁層
118 画素電極層
132 開口部
133 開口部
134 開口部
141 導電層
142 導電層
150 トランジスタ
152 容量素子
160 トランジスタ
162 第2の基板
164 導電層
166 液晶層
170 液晶素子
202 第1の基板
203 下地絶縁層
204 導電層
206a 絶縁層
206b 絶縁層
208 半導体層
210a_1 導電層
210a_2 導電層
210a_3 導電層
210b_1 導電層
210b_2 導電層
210b_3 導電層
210c 導電層
212 絶縁層
214 有色層
216 絶縁層
218 画素電極層
221 絶縁層
223 絶縁層
230 開口部
231 開口部
232 開口部
250 トランジスタ
262 第2の基板
264 導電層
266 液晶層
270 液晶素子
302 画素部
304 駆動回路部
304a ゲートドライバ
304b ソースドライバ
306 保護回路
307 端子部
308 画素回路部
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 支持部
5013 イヤホン
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (5)
- ゲート電極層と、前記ゲート電極層上のゲート絶縁層と、前記ゲート絶縁層上の半導体層と、前記ゲート絶縁層及び前記半導体層上のソース電極層及びドレイン電極層と、を含むトランジスタと、
前記ゲート電極層と同じ層に設けられた第1の導電層と、
前記ソース電極層及び前記ドレイン電極層と同じ層に設けられた反射電極層と、
前記反射電極層と重畳する領域を有する有色層と、
前記有色層を介して前記反射電極層と重畳する領域を有する画素電極層と、
前記ソース電極層または前記ドレイン電極層のいずれか一方と接続された第2の導電層と、を有し、
前記画素電極層が前記第2の導電層を介して前記トランジスタと接続され、
前記画素電極は、前記第1の導電層と接続され、
前記第1の導電層と、前記反射電極層との間で、容量素子が形成されることを特徴とする表示装置。 - 請求項1において、
前記第2の導電層の少なくとも一部の形状が、前記ソース電極層及び前記ドレイン電極層と同一形状であることを特徴とする表示装置。 - 請求項1または請求項2において、
前記導電層は、チタン(Ti)またはモリブデン(Mo)を含むことを特徴とする表示装置。 - 請求項1乃至請求項3のいずれか一つにおいて、
前記反射電極層は、アルミニウム(Al)を含むことを特徴とする表示装置。 - 請求項1乃至請求項4のいずれか一つにおいて、
前記画素電極層は、インジウム(In)、亜鉛(Zn)または錫(Sn)を含むことを特徴とする表示装置。
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CN104538411A (zh) * | 2015-01-22 | 2015-04-22 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
KR102503756B1 (ko) * | 2015-11-04 | 2023-02-27 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
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JP7050460B2 (ja) | 2016-11-22 | 2022-04-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
CN107085334A (zh) * | 2017-03-22 | 2017-08-22 | 南京中电熊猫平板显示科技有限公司 | 一种像素结构及其制造方法 |
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JP2019023731A (ja) | 2019-02-14 |
KR20150133766A (ko) | 2015-11-30 |
US20160111445A1 (en) | 2016-04-21 |
CN105051596A (zh) | 2015-11-11 |
CN105051596B (zh) | 2019-01-29 |
WO2014157126A1 (en) | 2014-10-02 |
US9502440B2 (en) | 2016-11-22 |
JP2014209223A (ja) | 2014-11-06 |
TWI637221B (zh) | 2018-10-01 |
TW201441740A (zh) | 2014-11-01 |
US20140291667A1 (en) | 2014-10-02 |
US9245907B2 (en) | 2016-01-26 |
KR102138212B1 (ko) | 2020-07-27 |
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