JP6168268B2 - 金属−セラミック基板及びそのような基板を製造するための方法 - Google Patents
金属−セラミック基板及びそのような基板を製造するための方法 Download PDFInfo
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Description
・均一な酸化銅層が生成されるように銅ホイルを酸化するステップ、
・セラミック層上に銅ホイルを配置するステップ、
・複合材を加熱して、およそ1025〜1083℃の、例えばおよそ1071℃までのプロセス温度にするステップ、
・室温に冷却するステップ。
s=1.5×F×L/B×d6
式中、
Fは、試験片6の初期弾性変形後に試験片の破壊が生じる際の、ニュートンで表された力であり、
Lは、より低い支持体7から試験片6の縦方向の、ミリメートルで表された2つの支持区域の距離であり、
Bは、その縦伸長に対して垂直な、ミリメートルで表された試験片6の幅であり、d6は、ミリメートルで表された試験片6の厚さである。
のろう付け温度は、ろう付中に一時的にしか適用されないため、ろう付け温度より低い、例えば350℃より低い、接合材料として使用される接着剤の温度耐性が、例えば少なくとも220℃の温度耐性が、原理的には十分である。
2 セラミック層
3、3a−3f セラミック層2を隔てる中間層
3.1〜3.3 金属層
4.5 金属層
4.1〜4.3 金属層区域
6 試験試料
7 支持体
8 試験試料
9 接続層又は接合層
10 陥凹部
11 電気的又は電子的電力部品又はモジュール
12、13 電気的又は電子的部品
14 スルーホール接点
15 底部
16 絶縁層
F 試験片6又は8に及ぼされる力
W 金属−セラミック基板にもたらされる熱エネルギー
W’ 熱拡散
L 支持体表面間の距離
B 試験片6の幅
M 基板中間平面
Claims (13)
- 電気回路又はモジュール用の金属−セラミック基板であって、
金属−セラミック(1、1a〜1f)の第1の表面側を形成する少なくとも1つの第1の外側金属層(4)を備え、前記金属−セラミック基板(1、1a〜1f)の1つの第2の表面側を形成する少なくとも1つの第2の外側金属層(5)を備え、
前記外側金属層(4、5)が、2次元的接合により平板様基板本体の表面側にそれぞれ接合されており、
前記基板本体が、機械的、熱的、及び電気的特性の向上を達成するために、少なくとも2つのセラミック層(2)と、これら前記セラミック層(2)間に設けられており前記セラミック層を互いに隔てる少なくとも1つの中間層(3、3a〜3f)とからなり、
前記中間層が、DCB接合又は活性ろう付けにより2次元的に前記セラミック層(2)に接続され、
前記中間層は、硬ろう付け、活性ろう付け、又は接着により2次元的に接合されている少なくとも2つの内部金属層(3.1、3.3)による多重層設計を有しており、
少なくとも、前記中間層(3、3a〜3f)を形成する前記内部金属層(3.1〜3.3)又はそれらの材料が、75未満のブリネル硬度を有し、
前記金属−セラミック基板は、前記中間層(3、3a〜3f)により互いに隔てられている2つの前記セラミック層(2)の層厚(d2)の合計と等しい厚みを持つ単一セラミック層の破壊強度より大きい破壊強度を有し、少なくとも18kV/mmの耐電圧及び絶縁耐力を有することを特徴とする金属−セラミック基板。 - 単一の中間層(3、3a〜3f)が、少なくとも2つの前記セラミック層(2)の間にあり、中間層(3、3a.3f)が、前記中間層に隣接する前記セラミック層(2)の表面側全体又は本質的に全体にわたって伸長していることを特徴とする、請求項1に記載の金属−セラミック基板。
- 前記中間層(3、3a〜3f)の層厚(d3、d3a〜d3f)が、前記外側金属層(4、5)の層厚(d4、d5)と少なくとも等しいか、前記外側金属層(4、5)の層厚(d4、d5)より大きいか、及び/又はセラミック層(2)の少なくとも1つの層厚(d2)より大きいことを特徴とする、請求項1又は2に記載の金属−セラミック基板。
- 前記中間層(3f)が、2つの内部金属層(3.1、3.2)間に設けられている1つの内部絶縁層(16)を備えることを特徴とする、請求項1又は2に記載の金属−セラミック基板。
- 前記中間層(3c〜3f)が、少なくとも1つの陥凹部(10)であって、接合中に放出されるガス成分及び/又は蒸気成分及び/又は液体成分を受容するための、また接合中に使用される過剰な接合剤を受容するためのチャネル又はチャンバーを形成するための少なくとも1つの陥凹部を備え、前記少なくとも1つの陥凹部が、前記金属−セラミック基板(1c〜1f)の少なくとも1つの周囲側で開口していることを特徴とする、請求項1〜4のいずれか一項に記載の金属−セラミック基板。
- 前記中間層(3c〜3f)が、少なくとも2つの前記内部金属層(3.1、3.2)を備え、少なくとも1つの前記陥凹部(10)が、これらの前記内部金属層(3.1、3.2)の少なくとも1つに設けられていることを特徴とする、請求項5に記載の金属−セラミック基板。
- 少なくとも1つの前記陥凹部(10)又はその内部空間が、少なくとも1つの前記内部金属層(3.1、3.2)の1つの側で開口しており、そこでは、この前記内部金属層(3.1、3.2)が、1つの更なる層(3.2、3.1、16)と2次元的に接合されて、前記中間層(3c〜3f)を形成することを特徴とする、請求項6に記載の金属−セラミック基板。
- 少なくとも1つの前記陥凹部(10)又はその内部空間が、前記内部金属層(3.1、3.2)により形成された底部(25)により、隣接する前記セラミック層(2)から隔てられていることを特徴とする、請求項6又は7に記載の金属−セラミック基板。
- 少なくとも、前記中間層(3、3a〜3f)を形成する前記内部金属層(3.1、3.2)が、10N/mmを超える接着強度又は剥離強度を有するそれぞれの隣接するセラミック層(2)と接合されていることを特徴とする、請求項1〜8のいずれか一項に記載の金属−セラミック基板。
- 互いに隔てられている前記セラミック層(2)の少なくとも1つに、この前記セラミック層(2)上に設けられてい前記る外側金属層(4)又はこの前記外側金属層(4)の金属層区域(4.1)を、機械的に、熱的に、及び/又は電気的に1つの内部金属層(3.1)と接続する少なくとも1つのスルーホール接点(14)が設けられていることを特徴とする、請求項1〜9のいずれか一項に記載の金属−セラミック基板。
- 前記セラミック層(2、16)が、Al2O3、Al2O3−ZrO2、AlN、Si3N4、又はこれらセラミックスの組み合わせの層であることを特徴とする、請求項1〜10のいずれか一項に記載の金属−セラミック基板。
- 請求項1〜11のいずれか一項に記載の金属−セラミック基板(1、1a〜1f)を製造するための方法であって、板状基板本体に設けられる外側金属層(4、5)を備え、
機械的、熱的、及び電気的特性が向上された金属−セラミック基板(1、1a〜1f)を製造するために、少なくとも2つのセラミック層(2)の両表面側に、DCB接合又は活性ろう付けにより、金属層(3.1、4、3.2、5)が設けられ、このように製造されたサブ基板が、硬ろう付けにより、活性ろう付けにより、又は接着接合により、金属層(3.1、3.2)上でそれぞれ互いに2次元的に接続されることを特徴とする、金属−セラミック基板を製造するための方法。 - 前記サブ基板の前記金属層(3.1、3.2、4)が、前記金属−セラミック基板(1c〜1f)の外部側の金属層区域(4.1〜4.3)を形成するために、及び/又は前記セラミック層(2)を互いに隔てる前記中間層(3c〜3f)に又はそこに設けられる金属層(3.1、3.2)に陥凹部(10)を形成するために、これらサブ基板を接合する前に組み立てられることを特徴とする、請求項12に記載の金属−セラミック基板を製造するための方法。
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DE102012102787B4 (de) * | 2012-03-30 | 2015-04-16 | Rogers Germany Gmbh | Verfahren zum Herstellen von Metall-Keramik-Substraten |
JP6154383B2 (ja) * | 2012-08-23 | 2017-07-05 | 日産自動車株式会社 | 絶縁基板、多層セラミック絶縁基板、パワー半導体装置と絶縁基板の接合構造体、及びパワー半導体モジュール |
JP6040803B2 (ja) * | 2013-02-22 | 2016-12-07 | 三菱マテリアル株式会社 | パワーモジュール |
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KR20200136962A (ko) * | 2018-03-27 | 2020-12-08 | 미쓰비시 마테리알 가부시키가이샤 | 히트 싱크가 부착된 절연 회로 기판 |
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DE102019126954A1 (de) * | 2019-10-08 | 2021-04-08 | Rogers Germany Gmbh | Verfahren zur Herstellung eines Metall-Keramik-Substrats, Lötsystem und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren |
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