JP7400109B2 - 金属-セラミック基板を生産する方法及びそのような方法によって生産された金属-セラミック基板 - Google Patents
金属-セラミック基板を生産する方法及びそのような方法によって生産された金属-セラミック基板 Download PDFInfo
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- JP7400109B2 JP7400109B2 JP2022537703A JP2022537703A JP7400109B2 JP 7400109 B2 JP7400109 B2 JP 7400109B2 JP 2022537703 A JP2022537703 A JP 2022537703A JP 2022537703 A JP2022537703 A JP 2022537703A JP 7400109 B2 JP7400109 B2 JP 7400109B2
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- 238000000034 method Methods 0.000 title claims description 64
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- 201000005400 Hermansky-Pudlak syndrome 9 Diseases 0.000 description 1
- 101000872147 Homo sapiens Biogenesis of lysosome-related organelles complex 1 subunit 6 Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
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- 229910006913 SnSb Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
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Description
-セラミック要素を設けることと、
-セラミック要素の第1の側上に第1のインターフェイスメタライゼーションを形成することであって、第1のインターフェイスメタライゼーションは第1の活性金属層と第1の湿潤金属層とを含む、ことと、
-セラミック要素の第1の側と反対側にあるセラミック要素の第2の側上に第2のインターフェイスメタライゼーションを形成することであって、第2のインターフェイスメタライゼーションは、第2の活性金属層と第2の湿潤金属層とを含む、ことと、
-特に活性はんだ付けプロセスによって第1のインターフェイスメタライゼーションに少なくとも1つの第1の金属層を接合し、金属-セラミック基板を形成することと、
-特に活性はんだ付けプロセスによって第2のインターフェイスメタライゼーションに少なくとも1つの第2の金属層を接合することと、を含み、
第1のインターフェイスメタライゼーション、特に、第1の活性金属層及び/若しくは第1の湿潤金属層、並びに/又は第2のインターフェイスメタライゼーション、特に、第2の活性金属層及び/若しくは第2の湿潤金属層は、第1のインターフェイスメタライゼーションに少なくとも1つの第1の金属層を接合すること及び第2のインターフェイスメタライゼーションに少なくとも1つの第2の金属層を接合することに先だって、特に一時的にエネルギー入力に曝される、方法が提供される。
当業者であれば、「DCBプロセス」(直接銅接合技術)又は「DABプロセス」(直接アルミニウム接合技術)は、例えば、それらの表面側に層又はコーティング(融合層)を有する金属及び/若しくは銅シート又は金属及び/若しくは銅箔を使用して、金属層又はシート(例えば、銅シート若しくは箔又はアルミニウムシート若しくは箔)を互いに及び/又はセラミックス若しくはセラミック層に接合するために使用されるプロセスであると理解している。例えば、米国特許第3744120号明細書又は独国特許発明第2319854号明細書に記載されているこのプロセスでは、この層又はコーティング(融合層)は、金属(例えば銅)の溶解温度未満の溶解温度で共晶を形成するため、セラミック上に箔を置き、全ての層を加熱することによって、すなわち実質的に融合層及び/又は酸化膜の領域内のみの金属及び/又は銅が溶解することにより、これらは互いに接合され得る。
・均一な酸化銅層が形成されるように銅箔を酸化させること。
・セラミック層上に銅箔を置くこと。
・室温に冷却すること。
-第1の活性金属層及び/又は第2の活性金属層を少なくともセクション毎に(zumindest abschnittsweise)最初に配置すること、及び/又は
-活性金属層上に第1の湿潤金属層を及び/又は第2の活性金属層上に第2の湿潤金属層を少なくともセクション毎に次に配置すること、が堆積プロセスによって行われ、
最初に配置することと次に配置することとの間に、第1の活性金属層及び/又は第2の活性金属層は更なるエネルギー入力に曝されるようになっている。特に、第1のインターフェイスメタライゼーション及び/又は第2のインターフェイスメタライゼーションをエネルギー入力及び/又は更なるエネルギー入力によって実現すると有利であることが見出されている。特に、第1の活性金属層、第2の活性金属層、第1の湿潤金属層及び/又は第2の湿潤金属層の比較的薄い設計により、目標とするエネルギー入力の枠組み内において、セラミック要素の第1及び/又は第2の側に対する材料接合をもたらす金属の溶解を生じさせることが可能になるという事実が利用される。エネルギー入力及び/又は更なるエネルギー入力を連続的に用いることにより、第1のエネルギー入力及び更なるエネルギー入力に使用されるパワー部分をいずれの場合においても可能な限り低く維持することができ、それにより、生産される金属-セラミック基板に対する各々の負荷が可能な限り低く維持される。
代替的に及び/又は追加的に、エネルギー入力及び/又は更なるエネルギー入力は、焼結及び/又はテンパリングを含むようになっており、すなわち、好ましくは、活性金属層及び/又は湿潤金属層は特に不活性条件下で加熱又は加温される。加熱は真空中又は不活性ガス雰囲気中で行われると考えられる。エネルギー入力は誘導効果によって開始されることも考えられる。活性金属層及び/又は湿潤金属層は、エネルギー入力及び/又は更なるエネルギー入力中に、加圧される、すなわち、互いに押し付けられることも考えられる。
10 セラミック要素
15 第1のインターフェイスメタライゼーション
16 第2のインターフェイスメタライゼーション
20 第1の金属層
26 第1の金属層の第1のサブセクション
27 第1の金属層の第2のサブセクション
28 第2の金属層の第2のサブセクション
29 第2の金属層の第1のサブセクション
22 第2の金属層
31 活性金属層
32 湿潤金属層
35 はんだ材料
40 エネルギー入力
HSE 主伸張平面
S 積層方向
D1 第1の厚み
D2 第2の厚み
D3 第3の厚み
S1 第1の側
S2 第2の側
Claims (10)
- 積層方向(S)に沿って重ねて配置されている少なくとも1つの第1の金属層(20)とセラミック要素(10)と少なくとも1つの第2の金属層(22)とを有する金属-セラミック基板(1)を生産する方法であって、前記セラミック要素(20)は、前記少なくとも1つの第1の金属層(20)と前記少なくとも1つの第2の金属層(22)との間に前記積層方向(S)に配置されており、前記少なくとも1つの第1の金属層(20)は特に金属材料に関して前記少なくとも1つの第2の金属層(22)と異なる、方法であり、
-前記セラミック要素(10)を設けることと、
-前記セラミック要素(10)の第1の側(S1)上に、第1の活性金属層(31)と第1の湿潤金属層(32)とを含む第1のインターフェイスメタライゼーション(15)を形成することと、
-前記セラミック要素(10)の前記第1の側(S1)と反対側にある前記セラミック要素(10)の第2の側(S2)上に、第2の活性金属層(41)と第2の湿潤金属層(42)とを含む第2のインターフェイスメタライゼーション(16)を形成することと、
-特に活性はんだ付けプロセスによって前記第1のインターフェイスメタライゼーション(15)に前記少なくとも1つの第1の金属層(20)を接合し、前記金属-セラミック基板(1)を形成することと、
-特に活性はんだ付けプロセスによって前記第2のインターフェイスメタライゼーション(16)に前記少なくとも1つの第2の金属層(22)を接合することと、を含み、
前記第1のインターフェイスメタライゼーション(15)及び前記第2のインターフェイスメタライゼーション(16)の少なくとも一方は、前記第1のインターフェイスメタライゼーション(15)に前記少なくとも1つの第1の金属層(20)を前記接合すること及び前記第2のインターフェイスメタライゼーション(16)に前記少なくとも1つの第2の金属層(22)を前記接合することの少なくとも一方に先だって、特に一時的にエネルギー入力(40)に曝される、方法。 - 前記少なくとも1つの第1の金属層(20)を前記接合することと前記少なくとも1つの第2の金属層(22)を前記接合することとは同時に実施される、請求項1に記載の方法。
- 前記少なくとも1つの第1の金属層(20)及び前記少なくとも1つの第2の金属層(22)を前記接合することは、800℃未満のはんだ付け温度で行われる、請求項1又は請求項2に記載の方法。
- 前記少なくとも1つの第1の金属層(20)及び前記少なくとも1つの第2の金属層(22)の少なくとも一方は、ハイブリッド構造及び表面改質の少なくとも一方を含み、
前記ハイブリッド構造は、第1の部分セクションと、前記第1の部分セクションよりも薄く、より低い溶解温度を有するとともに前記セラミック要素(10)に面する側に配置される第2の部分セクションと、を含む、請求項1~請求項3のいずれか一項に記載の方法。 - -前記第1の活性金属層(31)を少なくともセクション毎に最初に配置すること及び前記第2の活性金属層(41)を少なくともセクション毎に最初に配置することの少なくとも一方、が堆積プロセスによって行われ、
又は、
-前記活性金属層(31)上に前記第1の湿潤金属層(32)を少なくともセクション毎に次に配置すること及び前記第2の活性金属層(42)上に前記第2の湿潤金属層(42)を少なくともセクション毎に次に配置することの少なくとも一方、が堆積プロセスによって行われ、
又は、
-前記第1の活性金属層(31)を少なくともセクション毎に最初に配置すること及び前記第2の活性金属層(41)を少なくともセクション毎に最初に配置することの少なくとも一方、及び
-前記活性金属層(31)上に前記第1の湿潤金属層(32)を少なくともセクション毎に次に配置すること及び前記第2の活性金属層(42)上に前記第2の湿潤金属層(42)を少なくともセクション毎に次に配置することの少なくとも一方、が堆積プロセスによって行われ、
前記最初に配置することと前記次に配置することとの間に、前記第1の活性金属層(31)及び前記第2の活性金属層(41)の少なくとも一方は更なるエネルギー入力に曝される、請求項1~請求項4のいずれか一項に記載の方法。 - 光がエネルギー入力(40)及び更なるエネルギー入力の少なくとも一方として使用される、請求項1~請求項5のいずれか一項に記載の方法。
- 光フラッシュが使用され、前記第1の活性金属層(31)、前記第2の活性金属層(41)、前記第1の湿潤金属層(32)及び前記第2の湿潤金属層(42)の少なくとも1つに対する前記光フラッシュの前記エネルギー入力(40)は、少なくとも5kWである、請求項6に記載の方法。
- 前記第1の活性金属層(31)は第1の厚み(D1)を有し、前記第1の湿潤金属層(32)は第2の厚み(D2)を有し、前記第1の厚み(D1)及び前記第2の厚み(D2)の少なくとも一方は、0nmよりも大きく5000nm以下の値をとる、請求項1~請求項7のいずれか一項に記載の方法。
- 前記第1のインターフェイスメタライゼーション(15)及び前記第2のインターフェイスメタライゼーション(16)の少なくとも一方を形成するためにプロセスガスが使用される、請求項1~請求項8のいずれか一項に記載の方法。
- 請求項1~請求項9のいずれか一項に記載の方法によって生産された金属-セラミック基板(1)。
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PCT/EP2020/084468 WO2021122035A1 (de) | 2019-12-19 | 2020-12-03 | Verfahren zur herstellung eines metall-keramik-substrats und metall-keramik-substrat, hergestellt mit einem solchen verfahren |
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JP2013049589A (ja) | 2011-08-30 | 2013-03-14 | Kyocera Corp | セラミック体と金属体との接合体 |
JP2017065935A (ja) | 2015-09-28 | 2017-04-06 | デンカ株式会社 | セラミックス回路基板 |
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DE102009033029A1 (de) | 2009-07-02 | 2011-01-05 | Electrovac Ag | Elektronische Vorrichtung |
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WO2017126653A1 (ja) * | 2016-01-22 | 2017-07-27 | 三菱マテリアル株式会社 | 接合体、パワーモジュール用基板、パワーモジュール、接合体の製造方法及びパワーモジュール用基板の製造方法 |
JP7230432B2 (ja) * | 2017-11-02 | 2023-03-01 | 三菱マテリアル株式会社 | 接合体、及び、絶縁回路基板 |
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WO2008149818A1 (ja) | 2007-05-30 | 2008-12-11 | Kyocera Corporation | 積層型放熱基体およびこれを用いた放熱ユニット並びに電子装置 |
JP2013049589A (ja) | 2011-08-30 | 2013-03-14 | Kyocera Corp | セラミック体と金属体との接合体 |
JP2017065935A (ja) | 2015-09-28 | 2017-04-06 | デンカ株式会社 | セラミックス回路基板 |
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