JP7033660B2 - 金属セラミック基板および金属セラミック基板の製造方法 - Google Patents
金属セラミック基板および金属セラミック基板の製造方法 Download PDFInfo
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Description
原則として、低い熱抵抗に加えて、高い温度変化耐性も望ましく、これは対応する金属セラミック基板の耐久性に寄与する。
この目的は、請求項1に記載の金属セラミック基板および請求項8に記載の方法によって達成される。本発明のさらなる利点および特徴は、説明および添付の図と共に、従属請求項からもたらされる。
本発明によれば、金属セラミック基板は、セラミックを含み第1の厚さを有する絶縁層と、絶縁層に接合され第2の厚さを有する金属被覆層とを備え、第1の厚さは250μm未満であり、第2の厚さは200μmよりも大きく、第1の厚さおよび第2の厚さは、金属被覆層の熱膨張係数と金属セラミック基板の熱膨張係数との差の量の、金属セラミック基板の熱膨張係数に対する比が、0.25未満、好ましくは0.2未満、より好ましくは0.15未満、またはさらには0.1未満の値を有するような寸法である。
本発明のさらなる実施形態によれば、第1の厚さは30μmよりも大きく、好ましくは60μmよりも大きく、より好ましくは90μmよりも大きい。そのような第1の厚さにより、金属セラミック基板の対応する絶縁強度および安定性を確保できることが分かった。さらに、第1の厚さが90μmよりも大きい絶縁層の製造コストは、それよりも薄い絶縁層の製造コストよりも低くなる。
「DCBプロセス」(Direct Copper Bond技術)または「DABプロセス」(Direct Aluminium Bond技術)は、例えば、金属層またはシート(例えば、銅シートまたは箔)を、表面側に層またはコーティング(溶融層)を有する金属もしくは銅シートまたは金属もしくは銅箔を使用して、相互におよび/またはセラミック、またはセラミック層に接合するプロセスであると当業者に理解されている。このプロセスでは、例えば、特許文献2又は特許文献3に記載されているように、この層またはコーティング(可融層)は、金属(例えば、銅)の溶融温度より低い溶融温度で共晶を形成するので、セラミック上に箔を載せて全ての層を加熱することによって、それらを実質的に可融層または酸化物層の領域だけで、金属または銅を溶融させて接合することができる。
金属セラミック基板は、レーザースクライビング、レーザー切断、および/またはウォータジェット切断によって分離されることが好ましい。これにより、個々の金属セラミック基板は、前のプロセスで一度に形成された後、容易かつ比較的迅速に提供され得る。金属セラミック基板は、更に別の金属被覆層に途切れまたはエッチングがない場合、特にマスターカードからの、例えばレーザースクライビング、レーザー切断、および/またはウォータジェット切断による切断プロセスによって実現されることが好ましい。これは、基板の分離に役立つ。特に連続した更に別の金属被覆層のため、基板を破断によって分離する場合には多大な費用がかかるか、困難を伴う。
金属セラミック基板1の熱膨張係数に対する比が、
0.25未満、好ましくは0.2未満、より好ましくは0.15未満、またはさらには0.1未満の値を有する。
金属セラミック基板1の熱膨張係数に対する比が、
0.25未満、好ましくは0.2未満、より好ましくは0.15未満、またはさらには0.1未満の値を有する。決定102の後、好ましくはアクティブはんだ付けプロセス、DABプロセス、またはより好ましくはDCBプロセスを使用して、第2の厚さD2を有する金属被覆層12が絶縁層11に接合される。
Claims (10)
- 金属セラミック基板(1)であって、
セラミックを含み第1の厚さ(D1)を有する絶縁層(11)と、
前記絶縁層(11)に接合され、第2の厚さ(D2)を有する金属被覆層(12)とを備え、
前記金属被覆層(12)は、DCBプロセス、DABプロセス、またはアクティブはんだ付けプロセスによって、前記絶縁層(11)に接合され、
前記第1の厚さ(D1)は200μm未満であり、前記第2の厚さ(D2)は200μmよりも大きく、前記第1の厚さ(D1)および前記第2の厚さ(D2)は、
前記金属被覆層(12)の熱膨張係数と前記金属セラミック基板(1)の熱膨張係数との差の量の、
前記金属セラミック基板(1)の熱膨張係数に対する比が、
0.25未満の値を有するような寸法である、金属セラミック基板(1)。 - 請求項1に記載の金属セラミック基板(1)において、
前記第1の厚さ(D1)は30μmよりも大きい、金属セラミック基板(1)。 - 請求項1または2に記載の金属セラミック基板(1)において、
前記金属被覆層(12)とは反対の側で、第3の厚さ(D3)を有する更に別の金属被覆層(13)が前記絶縁層(11)に接合され、前記第1の厚さ(D1)、前記第2の厚さ(D2)および/または前記第3の厚さ(D3)は、
前記更に別の金属被覆層(13)および/または前記金属被覆層(12)の熱膨張係数と前記金属セラミック基板(1)の熱膨張係数との差の量の、
前記金属セラミック基板(1)の熱膨張係数に対する比が、
0.25未満の値を有するような寸法である、金属セラミック基板(1)。 - 請求項3に記載の金属セラミック基板(1)において、
安定性のため、前記金属被膜層(13)は途切れがなく、特に、絶縁トレンチがない、金属セラミック基板(1)。 - 請求項1乃至4のいずれか一項に記載の金属セラミック基板(1)において、
前記第2の厚さ(D2)および/または第3の厚さ(D3)は300μmよりも大きい、金属セラミック基板(1)。 - 請求項1乃至5のいずれか一項に記載の金属セラミック基板(1)において、
前記熱膨張係数は、材料固有のパラメータおよび/またはポアソン数に依存する、金属セラミック基板(1)。 - 請求項1乃至6のいずれか一項に記載の金属セラミック基板(1)において、
前記第2の厚さ(D2)および第3の厚さ(D3)は同一である、金属セラミック基板(1)。 - 請求項1乃至7のいずれか一項に記載の金属セラミック基板(1)において、
主延長面(HSE)に平行に測定される更に別の金属被覆層(13)の第3の延長(E3)の、前記主延長面(HSE)に平行に測定される前記金属被覆層(12)の第2の延長(E2)に対する比は、1.01から1.4の間の値を有する、金属セラミック基板(1)。 - 金属セラミック基板(1)を製造する方法であって、
セラミックを含み第1の厚さ(D1)を有する絶縁層(11)を配置する工程であって、前記第1の厚さ(D1)は200μm未満である工程と、
前記絶縁層(11)に接合され、第2の厚さ(D2)を有する金属被覆層(12)を配置する工程であって、前記第2の厚さ(D2)は200μmよりも大きい工程と、
前記金属被覆層(12)を前記絶縁層(11)に接合する工程とを備え、
前記第1の厚さ(D1)および/または前記第2の厚さ(D2)は、
前記金属被覆層(12)の熱膨張係数と前記金属セラミック基板(1)の熱膨張係数との差の量の、
前記金属セラミック基板(1)の熱膨張係数に対する比が、
0.25未満の値を有するような寸法である、金属セラミック基板(1)を製造する方法において、
前記金属被覆層(12)は、DCBプロセス、DABプロセス、またはアクティブはんだ付けプロセスによって、前記絶縁層(11)に接合される、方法。 - 請求項9に記載の方法において、
前記金属セラミック基板(1)は、レーザースクライビング、レーザー切断、またはウォータジェット切断によって分離される、方法。
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