CN102458043B - 金属陶瓷基片以及用于制造这种基片的方法 - Google Patents
金属陶瓷基片以及用于制造这种基片的方法 Download PDFInfo
- Publication number
- CN102458043B CN102458043B CN201110330450.3A CN201110330450A CN102458043B CN 102458043 B CN102458043 B CN 102458043B CN 201110330450 A CN201110330450 A CN 201110330450A CN 102458043 B CN102458043 B CN 102458043B
- Authority
- CN
- China
- Prior art keywords
- ceramic
- layer
- metal
- intermediate layer
- metal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
- C04B37/006—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of metals or metal salts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/634—Polymers
- C04B35/63448—Polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C04B35/63452—Polyepoxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/028—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles by means of an interlayer consisting of an organic adhesive, e.g. phenol resin or pitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5208—Fibers
- C04B2235/5216—Inorganic
- C04B2235/524—Non-oxidic, e.g. borides, carbides, silicides or nitrides
- C04B2235/5248—Carbon, e.g. graphite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5284—Hollow fibers, e.g. nanotubes
- C04B2235/5288—Carbon nanotubes
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/121—Metallic interlayers based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/124—Metallic interlayers based on copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/345—Refractory metal oxides
- C04B2237/348—Zirconia, hafnia, zirconates or hafnates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/402—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/62—Forming laminates or joined articles comprising holes, channels or other types of openings
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/68—Forming laminates or joining articles wherein at least one substrate contains at least two different parts of macro-size, e.g. one ceramic substrate layer containing an embedded conductor or electrode
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12542—More than one such component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12542—More than one such component
- Y10T428/12549—Adjacent to each other
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structure Of Printed Boards (AREA)
- Ceramic Products (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Laminated Bodies (AREA)
Abstract
特别用于电路或模块的金属陶瓷基片包括至少一个第一外部金属层,该第一外部金属层形成金属陶瓷基片的第一表面侧,该金属陶瓷基片还包括至少一个第二外部金属层,该第二外部金属层形成金属陶瓷基片的第二表面侧,第一、第二外部金属层分别通过两维结合而与板形基片本体的表面侧结合。
Description
技术领域
本发明涉及一种金属陶瓷基片以及用于制造这种基片的方法。
背景技术
在不同实施例中已知陶瓷基片,特别是用于电和电子电路或模块的这种基片,即特别作为用于这些电路或模块的印刷电路板。
还已知“DCB处理”(直接铜结合技术),下文中称为DCB结合,它用于使得金属层或板(例如铜板或铜箔)相互结合和/或与陶瓷或陶瓷层结合,也就是使用金属板或铜板,或者金属箔或铜箔,它们由于在金属和反应气体(优选是氧气)之间的化学键而在表面上提供有层或覆层(热熔层)。在这种方法中(该方法例如在US-PS3744120和DE-PS2319854中所述),该层或覆层(热熔层)形成共晶体,该共晶体的熔化温度低于金属(例如铜)的熔化温度,因此,通过将箔布置在陶瓷上并加热所有层(即通过使得金属或铜基本只在热熔层或氧化物层的区域中熔化),这些层能够相互结合。
这样的DCB方法包括例如以下步骤:
氧化铜箔,以便产生均匀的氧化铜层;
将铜箔布置在陶瓷层上;
加热复合材料至在大约1025℃和1083℃之间的处理温度,例如加热至大约1071℃;
冷却至室温。
还已知用于使得金属层或金属箔(特别是铜层或铜箔)与陶瓷材料结合的所谓活性钎焊方法(DE2213115、EP-A-153618)。在,特别用于制造金属陶瓷基片的这种方法中,在大约800-1000℃的温度下在金属箔(例如铜箔)和陶瓷基片(例如铝-氮化物陶瓷)之间利用硬钎料而产生结合,该硬钎料除了主要组分例如铜、银和/或金之外还包含活性金属。活性金属是组Hf、Ti、Zr、Nb、Ce中的至少一种元素,该活性金属在焊料和陶瓷之间通过化学反应而产生结合,同时在钎料和金属之间的结合是金属硬钎焊结合。
发明内容
在本发明中使用的术语“结合”总体上是指连接,例如DCB结合、活性钎焊、硬钎焊、粘接剂结合等。
在本发明中使用的术语“基本上”是指偏离确切值+/-10%,优选是+/-5%,和/或以功能并不明显变化的形式偏离。
本发明的目的是提供一种金属陶瓷基片,它具有提高的机械特性、热特性和电特性。该目的通过根据本发明的金属陶瓷基片而实现。用于制造金属陶瓷基片的方法也是本申请的主题。
在优选实施例中,根据本发明的金属陶瓷基片包括至少两个陶瓷层,这两个陶瓷层通过中间层而相互分离,陶瓷层例如由Al2O3、Al2O3-ZrO2、AlN和/或Si3N4制造,并通过中间层而相互分离,该中间层包括与两个陶瓷层都相邻的至少一个内部金属层或者分别与一个陶瓷层相邻的至少两个内部金属层。各内部金属层与陶瓷层连接,使得在内部金属层和相邻陶瓷层之间的粘接或剥离强度大于10N/mm,以便获得很高的弯曲强度和断裂强度。还有,为了特别在由于温度变化而产生应变时防止在各相邻陶瓷层中产生损坏或裂缝,内部金属层的金属具有小于75的布氏硬度,优选是布氏硬度小于40。
然后,这样形成的金属陶瓷基片优选是具有比单个陶瓷层(该陶瓷层的层厚等于本发明的基片的两个分离陶瓷层的层厚)的断裂强度显著更高的断裂强度,至少大1.5倍。
而且,本发明的金属陶瓷基片具有比只有一个陶瓷层(该陶瓷层的层厚等于本发明的基片的两个分离陶瓷层的层厚的总和)的基片的耐电强度或绝缘强度显著更高的耐电强度或绝缘强度,至少大1.4倍。在本发明的基片中,在产生电击穿之前,在层厚为大约0.3mm的陶瓷层内能够有至少18kV/mm的电场强度。
本发明的其它实施例、优点和应用也在下面对示例实施例和附图的说明中公开。所述和/或所示的所有特征(单独或者任意组合)是本发明的主题,而不管它们如何在权利要求中概括或表述。权利要求的内容也是说明书的整体部分。
附图说明
下面将根据示例实施例更详细地介绍本发明,附图中:
图1显示了本发明的金属陶瓷基片的简化剖视图;
图2和3显示了用于确定本发明的金属陶瓷基片的断裂强度或用于确定在内部金属层和相邻陶瓷层之间的粘接强度或剥离强度的测量结构;
图4-7分别显示了本发明不同实施例的金属陶瓷基片的剖视图;
图8和9分别显示了本发明的其他金属陶瓷基片的放大局部剖视图。
具体实施方式
图1中总体以附图标记1表示的、具有提高的机械、热和电特性的金属陶瓷基片基本包括:两个扁平的板形陶瓷层2;中间层3,该中间层3成布置在这些陶瓷层2之间的单个内部金属层3.1的形式,并分别与陶瓷层的相互面对表面侧进行两维连接;以及两个外部金属化部分,这两个外部金属化部分成施加在陶瓷层2的、相互背离的表面侧上的金属层4、5的形式。优选是,金属层3、4和5是铜或铜合金或铝的金属箔和/或金属层。
陶瓷层2包括用于金属陶瓷基片的合适陶瓷,例如Al2O3、Al2O3-ZrO2、AlN和/或Si3N4。为了实现金属陶瓷基片1至少在热特性方面相对于基片中间平面(该中间平面平行于陶瓷层2的表面侧,并在这些层之间的中部延伸)对称设计,并因此防止当热负载作用在金属陶瓷基片1上时的双金属效应,优选是陶瓷层2为相同陶瓷,具有相同的层厚d2。而且,外部金属层4和5(该外部金属层4和5通过它们背离各相邻陶瓷层2的表面侧而形成金属陶瓷基片1的顶侧(金属层4)和底侧(金属层5)),优选具有相同厚度d4和d5(d4=d5)。不过,总体上来说,也可以考虑其它实施例,特别是当并不希望和/或需要金属陶瓷基片1相对于基片中间平面对称设计时。
陶瓷层2优选是使用所谓的DCB技术(即通过DCB结合和/或活性钎焊)来与金属层3.1、4和5连接。制造优选是在单个处理步骤中进行,其中,包括两个陶瓷层2、内部金属层3.1和两个外部金属层4和5的堆垛通过DCB结合或通过活性钎焊而连接成金属陶瓷基片。原则上,金属陶瓷基片1也能够在多个在时间上连续的处理步骤中制造,例如以这样的方式,即在第一处理步骤中,各陶瓷层2只在一个表面侧提供有金属层4或5,例如通过DCB结合或活性钎焊,然后,在再一处理步骤中,使得两个陶瓷层2的、背离金属层4或5的表面侧分别与中间金属层3.1接触,并例如通过DCB结合或活性钎焊而与该中间金属层连接。
两个陶瓷层2和内部金属层3.1形成基片本体,该基片本体的厚度比外部金属层4和5的厚度d4和d5相比大得多,该基片本体厚度等于陶瓷层2的厚度d2的两倍与中间金属层3.1的厚度d3.1的总和。
陶瓷层2的层厚d2例如在大约0.2mm和1.3mm之间。内部金属层3的层厚d3.1大约在0.1mm和0.8mm之间,外部金属层4和5的层厚d4和d5例如同样在大约在0.1mm和0.8mm之间。不过,层厚d4和d5也可以与此不同,即也取决于金属陶瓷基片1的相应用途。
实际上,至少顶部金属层4以本领域技术人员已知的方式构成,以便形成相互电绝缘的金属层区域,即例如通过机械处理和/或使用本领域技术人员已知的掩模和蚀刻技术而形成电接触表面和/或条带导体和/或连接件。
由于图1中所示的结构,上面所述的金属陶瓷基片与包括双侧面金属化的单个陶瓷层的普通金属陶瓷基片相比,令人惊讶地大大提高了机械特性、热特性和电特性。例如,金属陶瓷基片1有更高的弯曲强度和提高的断裂强度,与一个陶瓷层2的金属陶瓷基片的断裂强度相比提高了至少1.5倍。
断裂强度s由图2中示意表示的三点负载测试来确定。在这种测试中,当从上面看为矩形的测试件6(该测试件6例如为两个陶瓷层2中的一个或者金属陶瓷基片1自身)在两端处(即在它的狭窄侧部附近)布置在支承件7上,该支承件7分别垂直于测试件6的纵向侧部延伸,并相互平行和分开。然后,力F通过另一支承件7或楔形模具而在在上述支承件7之间的中部处施加在测试件6的顶侧上。然后根据以下公式来确定断裂强度系数s:
s=1.5xFxL/Bxd6
其中:
F是在测试件6的初始弹性变形之后该测试件产生断裂时的力(牛顿);
L是底部支承件7的两个支承区域沿测试件6的纵向方向的距离(毫米);
B是测试件6的、与它的纵向延伸部分垂直的宽度(毫米);
d6是测试件6的厚度(毫米)。
纯陶瓷的断裂比强度(specific breaking strength)大于400N/mm2,它也等于只有一个陶瓷层的普通金属陶瓷基片的断裂强度,因为施加在两侧的金属层只是很小地增加了断裂比强度。测量值已经证明金属陶瓷基片1的断裂比强度高得多,即与只有一个陶瓷层(该陶瓷层的层厚等于层厚d2的总和)的金属陶瓷基片的断裂比强度相比至少高出1.5倍。
为了提高断裂比强度,根据本发明的基本原理,需要或者至少合适的是使得至少在内部金属层3.1和相邻陶瓷层2之间的连接有足够高的粘接强度或剥离强度。粘接强度或剥离强度以图3中所示的方式在包括陶瓷层2和金属层3.1(该金属层3.1与该陶瓷层结合)的测试件8上测量,即以通过沿与陶瓷层2的表面侧的平面垂直的轴向方向的力F来拉开金属层3.1的方式。
金属层3.1为条带形,具有50mm的宽度和0.5mm的厚度。粘接强度或剥离强度是将金属层3.1从陶瓷层2上除去所需的最小力F(单位为N)与金属层3的宽度(单位为mm)的商。
为了获得金属陶瓷基片1的上述增大的断裂强度s1,根据本发明的原理需要大于10N/mm的粘接强度或剥离强度。
而且,金属陶瓷基片1还具有提高的热特性。这些特性部分是由于金属陶瓷基片1的特性非常抗温度变化。金属陶瓷基片还在温度频繁变化以及较高或极高变化的情况下稳定,即特别是不会产生将削弱金属陶瓷基片的特性的损害,特别是不会削弱机械和电特性(特别是耐电强度),例如尽管陶瓷和金属或铜有不同的热膨胀系数,但在陶瓷层2中不会产生裂缝。在金属陶瓷基片1中的频繁温度变化或极度温度变化特别在当该基片用作例如高功率电路或模块的基座或基板(例如用于开关驱动器或具有高功率的其它消耗装置)时会产生。为了实现这样的高度的热稳定性,本发明提出使用的金属层3.1、4和5的金属布氏硬度小于75,优选是(特别是使用铝时)小于40。
令人惊讶的是,金属陶瓷基片1的改进的热特性也通过使得内部金属层3用作热扩散器而实现。为了更好地理解,应当知道,在使用时,上部金属层4构成为使得该金属层的金属层区域形成用于电气部件或电子功率部件(该电气部件或电子功率部件在操作过程中耗散热量)的接触或安装表面,如图1中通过箭头W所示。该耗散热量W再通过上部陶瓷层2而传递至内部金属层3.1中,耗散热量在该内部金属层3.1中横向散布或扩散,如图1中通过箭头W'所示。因此,耗散热量进一步从金属层3.1的整个表面或几乎整个表面在较大截面上通过底部陶瓷层2而传递至底部金属层5,或者传递至与该金属层至少传热连接的冷却器(未示出)。
而且,金属陶瓷基片1还具有高的电特性。上面的内容中已经介绍了由于金属层3、4和5的金属硬度的相应选择而在温度变化的情况下避免陶瓷层2中的热相关缺陷或裂缝以及避免由这样的缺陷引起的金属陶瓷基片的耐电强度降低。
还已经显示,金属层3.1、4和5的低硬度(特别是在DCB结合情况下以及在活性钎焊情况下)是主要优点,因为由于金属层3、4和5的硬度降低,在结合之后在金属陶瓷基片从高处理温度(大约1025℃至1083℃,或者在活性钎焊的情况下大约800℃-1000℃)冷却至环境温度的过程中,在陶瓷层2中不会产生影响金属陶瓷基片的耐电强度的热相关裂缝。
而且,还令人惊讶地显示,由于金属陶瓷基片1的结构,该基片的耐电强度能够大大增加,即增加至远远大于由层厚等于层厚d2的总和的陶瓷层所具有的耐电强度。
这里,耐电强度的意思是在外部直流(DC)电压施加于金属层4和5上的情况下恰好在还没有发生电击穿时在陶瓷层2中存在的电场强度,即特别是在局部放电仍然低于预定阈值时。在具有大约0.64mm层厚的单个陶瓷层的情况下,确定耐电强度或绝缘强度的该电场强度为至少10kV/mm。当在金属陶瓷基片1中使用各有0.32mm层厚的两个陶瓷层2时,确定耐电强度或击穿强度的电场强度为至少18kV/mm。这意味着在陶瓷层2的总厚度相等的情况下金属陶瓷基片1的耐电强度与只有一个陶瓷层(该陶瓷层的层厚为陶瓷层2的层厚d2的两倍)的金属陶瓷基片相比大至少1.4倍。
金属陶瓷基片1的断裂强度与只有单个陶瓷层(不过,该单个陶瓷层的厚度为厚度d2的两倍)的金属陶瓷基片相比增加是因为中间层3将两个陶瓷层2相互分开。该中间层的层厚选择为使得金属陶瓷基片1的断裂强度增加至少1.5倍。
图4表示了金属陶瓷基片1a的还一实施例,它与图1的金属陶瓷基片1的区别主要在于与中间层3相对应的中间层3a为多层,即包括金属层3.1和另一金属层3.2。两个金属层3.1和3.2(其中的金属层3.1与图4中的上部陶瓷层2的底侧连接,金属层3.2与图4中的底部陶瓷层2的顶侧连接,即通过DCB结合或活性钎焊)通过连接层9而相互两维连接。连接层9由例如硬钎料制造,例如熔点高于300℃的硬钎料。两个金属层3.1和3.2都分别具有例如层厚d3,这样,金属陶瓷基片1a的两个陶瓷层2与金属陶瓷基片1中相比相互分离甚至更远。因此,该金属陶瓷基片1a与金属陶瓷基片1相比具有甚至更高的弯曲刚性和断裂强度。由于多层中间层3a与中间层3相比具有更大的层厚,因此也提高了热扩展效果。
金属陶瓷基片1a的制造优选是这样实现,即两个陶瓷层2在两侧分别提供金属层3.1、4以及3.2、5,例如使用DCB处理和/或活性钎焊处理,然后,这样制造的子基片通过连接层9而在金属层3.1和3.2上相互连接。
图5表示了金属陶瓷基片1b的再一实施例,该金属陶瓷基片1b与金属陶瓷基片1a的区别主要在于形成使得两个陶瓷层2相互分离的多层中间层3b的两个金属层3.1和3.2通过DCB结合而相互连接,从而省略连接层9。
图6表示了金属陶瓷基片1c的还一实施例,该金属陶瓷基片1c与金属陶瓷基片1b的区别首先在于使得两个陶瓷层2相互分离的中间金属层3c有三层,即包括金属层3.1、3.2和3.3,其中,三层金属层3.1、3.2和3.3同样通过DCB结合、活性钎焊和/或硬钎焊而相互连接,且其中的金属层3.1与图6中的上部陶瓷层2的底侧连接,金属层3.2与图6中的底侧陶瓷层2的顶侧连接,即分别通过DCB结合或活性钎焊。
如图6中所示,金属层3.1和3.2构成为在这些金属层内形成腔室或槽道或凹口10,即用于接收在连接或结合过程中释放的气体和/或蒸气和/或液体组分,例如也用于接收多余的连接材料或结合材料,例如钎料。
为了不削弱金属陶瓷基片1c的机械特性和热特性,即为了并不削弱所需的高断裂强度以及在金属陶瓷基片1c的顶侧和底侧之间的所需的低热阻,提供于金属层3.1和3.2中的凹口10相互偏离,即布置成使得它们并不交叠。
所示的金属层3.3是连续的,即没有凹口10。当然,相应凹口也能够提供于该层中。在该实施例中,上部金属层4构成为用于形成相互电绝缘的金属层区域4.1和4.2。
金属陶瓷基片1c的制造例如这样实现,即首先,陶瓷层2在它们的表面侧分别提供有金属层3.1、4以及3.2、5,例如通过DCB结合或活性钎焊,然后,形成的子基片通过它们的金属层3.1和3.2而由金属层3.3相互连接,例如使用合适的结合介质(例如硬钎料)。其它结合处理例如DCB结合和/或活性钎焊也能够用于使得金属层3.1、3.2与金属层3.3连接。
图7表示了金属陶瓷基片1d的再一实施例,其中,使得两个陶瓷层2相互分离的中间层3d同样由两个金属层3.1和3.2形成,这两个金属层3.1和3.2相互两维连接。陶瓷层2在背离中间层3d的表面侧提供有金属层4和5。直到这里,金属陶瓷基片1d与金属陶瓷基片1b相对应。不过,在金属陶瓷基片1d中,金属层3.1和3.2同样构造有凹口10,该凹口10用于接收在结合过程中积累的相应气体组分和/或蒸气组分和/或液体组分,例如也用于接收多余的结合介质。而且,在金属陶瓷基片1d的顶侧的金属层4构成为形成相互电绝缘的金属层区域4.1、4.2和4.3,金属层区域4.1用作电气或电子功率元件或模块11的安装表面,该电气或电子功率元件或模块11例如为IGBT(绝缘门双极晶体管),并至少与金属层区域4.1热连接。其它电气或电子部件12和13提供于金属层区域4.2和4.3上,这些电气或电子部件12和13同样至少与这些金属层区域热连接,但优选是也与这些金属层区域电连接。部件12和13例如为促动器或驱动器电路或模块、二极管、电阻器等。
图8显示了穿过金属陶瓷基片1e所作的放大局部剖视图,该金属陶瓷基片1e与金属陶瓷基片1d基本相同,不过,区别首先是基片的顶侧的金属层区域4.1通过在上部陶瓷层2中的开口且借助于由该开口形成的通孔接触件14而与金属层3.1机械、热和电连接,并通过该金属层3.1而与金属层3.2机械、热和电连接。通孔接触件14由金属材料制成,优选是至少金属层3.1、4的材料,但也优选是全部金属层3.1、3.2、4和5的材料。
如图8进一步所示,两个金属层3.1和3.2设计为形成凹口10,这样,尽管凹口一直延伸至在金属层3.1和3.2之间的连接平面,但是它们并不直接延伸至各相邻陶瓷层2,即各凹口10有底部15,该底部15由相应金属层3.1或3.2的、具有显著减小厚度的区域而形成,并因此使得各凹口10的内部空间与相邻陶瓷层2分离。
优选地,其它金属陶瓷基片(例如金属陶瓷基片1c和1d)也以这样地方式设计槽道或腔室或凹口10。
金属陶瓷基片1e的制造同样优选是以这样的形式来实现,即首先,两个子基片分别包括陶瓷层2、金属层3.1、4以及陶瓷层2、3.2、5,且具有至少一个通孔接触件14,金属层3.1和3.2构成为形成槽道或腔室10,且至少金属层4构成为形成金属层区域4.1、4.2、4.3等,然后使用合适的技术,例如蚀刻和掩模,和/或通过机械加工进行处理。然后,这样构成的子基片在金属层3.1和3.2上相互连接,例如通过DCB结合、活性钎焊或硬钎焊,或者使用其它合适的结合方式。凹口10在子基片的表面侧(这些子基片在该表面侧进行连接以便形成金属陶瓷基片1e)开口。
图9表示了作为另一实施例的金属陶瓷基片1f,该金属陶瓷基片1f与金属陶瓷基片1e的区别仅在于使得两个陶瓷层2相互分离的多层中间层3f除了包括两个金属层3.1和3.2之外还包括布置于这些金属层之间的绝缘层16,在所示实施例中为薄绝缘层,绝缘层16例如同样为陶瓷层。在所示实施例中,凹口10直接与绝缘层16相邻。
金属陶瓷基片1f的制造以与金属陶瓷基片1e的制造类似的方式来实现,即首先,两个子基片由陶瓷层2、金属层3.1、4以及陶瓷层2、3.2、5以及通孔接触件14而形成,然后使用合适技术,例如蚀刻和掩模和/或通过机械处理来构造形成凹口10和金属层区域4.1、4.2、4.3等。然后,所述子组件通过它们的子层3.1和3.2借助于绝缘层16而使用合适的结合技术进行连接,例如使用DCB结合或活性钎焊。凹口10同样在子基片的表面侧(这些子基片在该表面侧通过绝缘层16而进行连接,以便形成金属陶瓷基片1f)开口。
金属陶瓷基片1、1a-1d的中间层3、3a-3d只用于分离两个陶瓷层2,但是中间层3e和3f由于至少一个通孔接触件14而具有导电功能,即中间层3e和中间层3f的金属层3.1例如用作连接件或电连接件。
金属陶瓷基片1a-1f的陶瓷层2的陶瓷同样优选是Al2O3、Al2O3-ZrO2、AlN或者Si3N4,且它们的层厚d2例如在大约0.2mm和1.3mm之间。金属层3.1、3.2、3.3、4和5例如为铜或铜合金层。原则上其它金属材料也能够用于这些金属层,优选是铝或铝合金。金属层3.1和3.2的层厚d3.1和d3.2例如在0.1mm和0.8mm之间,例如金属层3.3的层厚d3.3和/或外部金属层4和5的层厚d4和d5也是这样设置。
在金属陶瓷基片1a-1f中,使得两个陶瓷层2相互分离的中间层3a-3f的总厚度选择为使得各金属陶瓷基片1a-1f具有所需的弯曲强度和断裂强度,该断裂强度远远大于单个陶瓷层(该单个陶瓷层的层厚等于两个陶瓷层2的层厚d2的总和)的断裂强度,即至少大1.5倍。而且,在金属陶瓷基片1a-1f中,至少在各陶瓷层2和相邻金属层3.1或3.2之间的连接的粘接强度或剥离强度同样为至少10N/mm,即至少金属层3.1和3.2具有减小的金属硬度,优选是金属层3.3、4和5也这样,即具有小于75的布氏硬度,优选是小于40。
金属陶瓷基片1a-1f具有与对于金属陶瓷基片1所述相同的机械特性、热特性和电特性,即高弯曲强度和断裂强度、在中间层3a-3f中的高热扩展性、非常耐温度变化(也通过减小金属层的金属硬度而提高)以及提高的电特性,特别是对于耐电强度和绝缘强度。这同样与具有单个陶瓷层(该陶瓷层的层厚对应多个陶瓷层2的层厚d2的总和)的金属陶瓷基片相比至少高1.4倍。
在金属陶瓷基片1a-1f中,金属层4和5同样通过它们与各相邻陶瓷层2背离的表面侧而形成金属陶瓷基片1的顶侧(金属层4)和底侧(金属层5)。
优选地,至少针对热特性来说,金属陶瓷基片1a-1f相对于基片中间平面(该中间平面在基片顶侧和基片底侧之间的中部延伸,并平行于这些侧面延伸)对称或基本对称,因此在温度变化时不会产生使得基片弯成弧形的双金属效应。优选地,从层数和层类型、层厚度和用于这些层的材料的角度来说,金属陶瓷基片1a-1f相对于基片中间平面对称或基本对称。
上面根据示例实施例介绍了本发明。不用说,在并不脱离本发明基于的发明思想的情况下能够进行多种变化和改变。
例如在前述说明中,假定不同金属层3.1、3.2、3.3、4和5的相互连接或结合或者与相邻陶瓷层2的连接或结合是通过DCB结合、活性钎焊和/或硬钎焊来实现的。原则上,使用合成粘接剂(例如使用基于环氧树脂的粘接剂)的粘接剂连接或粘接剂技术也能够用于上述结合,特别是纤维增强粘接剂,该纤维增强粘接剂例如由于它们的纤维含量而降低了相邻金属层的热膨胀,因此进一步提高了耐温度变化性能。
用于该用途的合适粘接剂特别为包含碳纤维和/或碳纳米纤维和/或碳纳米管的粘接剂,和/或能够进行良好的导热和/或导电连接的粘接剂。
优选地,合成材料(例如环氧树脂)用于该粘接剂,它适合在用于使得部件与基片或印刷电路板结合而使用的钎焊温度(例如350℃)下至少5分钟。不过,在钎焊过程中,各钎焊温度只是暂时施加,原则上,用作结合材料的粘接剂的耐温性低于钎焊温度(例如低于350℃)也很充分,例如耐温性为至少220℃。
在上述金属陶瓷基片1a-1f中,各中间层3、3a-3f连续设计。不过这是优选实施例,实施例还能够设想为这样:使得陶瓷层分离的中间层包括多个区域或部分。
附图标记列表
1、1a-1f 金属陶瓷基片
2 陶瓷层
3、3a-3f 用于分离陶瓷层2的中间层
3.1-3.3 金属层
4、5 金属层
4.1-4.5 金属层区域
6 测试件
7 支承件
8 测试件
9 连接层或结合层
10 凹口
11 电气或电子功率部件或模块
12、13 电气部件或电子部件
14 通孔接触件
15 底部
16 绝缘层
F 施加在测试件6或8上的作用力
W 送入金属陶瓷基片中的热能
W' 热扩展
L 在支承表面之间的距离
B 测试件6的宽度
M 基片中间平面
Claims (17)
1.一种金属陶瓷基片,用于电路或模块,该金属陶瓷基片包括至少一个第一外部金属层(4),该第一外部金属层(4)形成金属陶瓷基片(1、1a-1f)的第一表面侧,该金属陶瓷基片还包括至少一个第二外部金属层(5),该第二外部金属层(5)形成金属陶瓷基片(1、1a-1f)的第二表面侧,所述第一外部金属层(4)和第二外部金属层(5)分别通过两维结合而与板状基片本体的表面侧结合,为了提高机械特性、热特性和电特性,所述板状基片本体包括至少两个陶瓷层(2)和至少一个中间层(3、3a-3f),该至少一个中间层(3、3a-3f)布置在这些陶瓷层(2)之间,并使得陶瓷层(2)相互分离,所述中间层通过直接铜结合或活性钎焊而与陶瓷层(2)两维连接,所述中间层包括具有至少两个内部金属层(3.1、3.3)的多层式结构,其特征在于,所述中间层的所述内部金属层通过活性钎焊或硬钎焊或使用粘接剂来两维连接,至少形成所述中间层(3、3a-3f)的金属层(3.1-3.3)或该金属层的材料具有小于75的布氏硬度,该金属陶瓷基片的断裂强度大于单个陶瓷层的断裂强度,该单个陶瓷层的层厚等于由所述中间层(3、3a-3f)所分离的所述至少两个陶瓷层(2)的层厚(d2)的总和,该金属陶瓷基片的耐电强度或绝缘强度为至少18kV/mm。
2.根据权利要求1所述的金属陶瓷基片,其特征在于:在该至少两个陶瓷层(2)之间有单个中间层(3、3a-3f),该单个中间层(3、3a-3f)在陶瓷层(2)的、邻近该单个中间层的整个表面侧上延伸。
3.根据权利要求1所述的金属陶瓷基片,其特征在于:在该至少两个陶瓷层(2)之间有单个中间层(3、3a-3f),该单个中间层(3、3a-3f)在陶瓷层(2)的、邻近该单个中间层的基本整个表面侧上延伸。
4.根据权利要求1-3之一所述的金属陶瓷基片,其特征在于:中间层(3、3a-3f)的层厚(d3、d3a-d3f)至少等于第一外部金属层(4)的层厚(d4)、第二外部金属层(5)的层厚(d5)。
5.根据权利要求1-3之一所述的金属陶瓷基片,其特征在于:所述中间层(3、3a-3f)的层厚(d3、d3a-d3f)大于第一外部金属层(4)的层厚(d4)、第二外部金属层(4、5)的层厚(d5),和/或大于至少一个陶瓷层(2)的层厚(d2)。
6.根据权利要求1-3之一所述的金属陶瓷基片,其特征在于:所述中间层包括布置在两个内部金属层之间的一个内部绝缘层(16)。
7.根据权利要求1-3之一所述的金属陶瓷基片,其特征在于:所述中间层包括用于形成槽道或腔室的至少一个凹口(10),所述槽道或腔室用于接收在结合过程中释放的气体组分和/或液体组分,以及用于接收在结合过程中使用的多余结合剂,该至少一个凹口在金属陶瓷基片(1c-1f)的至少一个外周侧上开口。
8.根据权利要求7所述的金属陶瓷基片,其特征在于:所述气体组分为蒸气组分。
9.根据权利要求8所述的金属陶瓷基片,其特征在于:多层式中间层(3c-3f)包括至少两个内部金属层(3.1、3.2),且该至少一个凹口(10)提供于所述至少两个内部金属层(3.1、3.2)中的至少一个中。
10.根据权利要求9所述的金属陶瓷基片,其特征在于:该至少一个凹口(10)或者它的内部空间在至少一个内部金属层(3.1、3.2)的一侧开口,该至少一个内部金属层(3.1、3.2)在该侧与另外的一层(3.2、3.1、16)进行两维连接,以便形成多层式中间层(3c-3f)。
11.根据权利要求9所述的金属陶瓷基片,其特征在于:该至少一个凹口(10)或它的内部空间通过由内部金属层(3.1、3.2)形成的底部(15)而与相邻陶瓷层(2)分离。
12.根据权利要求1所述的金属陶瓷基片,其特征在于:至少形成中间层(3、3a-3f)的金属层(3.1-3.3)或该金属层的材料具有小于40的布氏硬度。
13.根据权利要求1或12所述的金属陶瓷基片,其特征在于:至少形成所述中间层(3、3a-3f)的内部金属层(3.1、3.2)在粘接强度或剥离强度大于10N/mm的情况下与相应的相邻陶瓷层(2)连接。
14.根据权利要求1或12所述的金属陶瓷基片,其特征在于:在相互分离的陶瓷层(2)中的至少一个中提供有至少一个通孔接触件(14),该通孔接触件使得布置在该陶瓷层(2)上的外部金属层(4)或者该外部金属层(4)的金属层区域(4.1)与一个内部金属层(3.1)机械、热和/或电连接。
15.根据权利要求1所述的金属陶瓷基片,其特征在于:陶瓷层(2、16)是由Al2O3、Al2O3-ZrO2、AlN、Si3N4或者这些陶瓷的组合形成的层。
16.一种用于制造根据权利要求1-15之一所述的金属陶瓷基片的方法,该金属陶瓷基片包括布置在板形基片本体上的外部金属层,其特征在于:为了制造具有提高的机械特性、热特性和电特性的金属陶瓷基片,至少两个陶瓷层在两个表面侧通过直接铜结合或者活性钎焊而提供有金属层,且这样制造的子基片分别在金属层上相互通过硬钎焊、通过活性钎焊或通过粘接剂结合而进行两维连接。
17.根据权利要求16所述的方法,其特征在于:所述子基片的金属层在这些子基片结合之前构成为用于在金属陶瓷基片的外侧上形成金属层区域,和/或用于在使得陶瓷层相互分离的中间层中或在中间层提供的金属层中形成凹口。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010049499.2 | 2010-10-27 | ||
DE102010049499.2A DE102010049499B4 (de) | 2010-10-27 | 2010-10-27 | Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines solchen Substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102458043A CN102458043A (zh) | 2012-05-16 |
CN102458043B true CN102458043B (zh) | 2017-04-12 |
Family
ID=44946938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110330450.3A Active CN102458043B (zh) | 2010-10-27 | 2011-10-27 | 金属陶瓷基片以及用于制造这种基片的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8974914B2 (zh) |
EP (1) | EP2447235A1 (zh) |
JP (1) | JP6168268B2 (zh) |
CN (1) | CN102458043B (zh) |
DE (1) | DE102010049499B4 (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004033933B4 (de) * | 2004-07-08 | 2009-11-05 | Electrovac Ag | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
DE102011103746A1 (de) * | 2011-05-31 | 2012-12-06 | Ixys Semiconductor Gmbh | Verfahren zum Fügen von Metall-Keramik-Substraten an Metallkörpern |
DE102012102611B4 (de) * | 2012-02-15 | 2017-07-27 | Rogers Germany Gmbh | Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates |
DE102012102787B4 (de) * | 2012-03-30 | 2015-04-16 | Rogers Germany Gmbh | Verfahren zum Herstellen von Metall-Keramik-Substraten |
JP6154383B2 (ja) * | 2012-08-23 | 2017-07-05 | 日産自動車株式会社 | 絶縁基板、多層セラミック絶縁基板、パワー半導体装置と絶縁基板の接合構造体、及びパワー半導体モジュール |
JP6040803B2 (ja) * | 2013-02-22 | 2016-12-07 | 三菱マテリアル株式会社 | パワーモジュール |
DE102013113734B4 (de) * | 2013-12-10 | 2018-03-08 | Rogers Germany Gmbh | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
JP6616166B2 (ja) * | 2015-09-26 | 2019-12-04 | 京セラ株式会社 | 回路基板および電子装置 |
WO2017095884A1 (en) * | 2015-12-01 | 2017-06-08 | Materion Corporation | Metal-on-ceramic substrates |
JP6608728B2 (ja) * | 2016-02-23 | 2019-11-20 | 京セラ株式会社 | 回路基板および電子装置 |
CN106550534B (zh) * | 2016-07-06 | 2019-11-19 | 深圳市微纳科学技术有限公司 | 多层陶瓷印制电路板及其制造方法 |
EP3326986B1 (en) | 2016-11-28 | 2020-11-25 | Infineon Technologies AG | Process for the manufacture of a metal-ceramic substrate |
DE102016125348B4 (de) * | 2016-12-22 | 2020-06-25 | Rogers Germany Gmbh | Trägersubstrat für elektrische Bauteile und Verfahren zur Herstellung eines Trägersubstrats |
DE102017128316B4 (de) * | 2017-11-29 | 2019-12-05 | Rogers Germany Gmbh | Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat |
KR20200136962A (ko) * | 2018-03-27 | 2020-12-08 | 미쓰비시 마테리알 가부시키가이샤 | 히트 싱크가 부착된 절연 회로 기판 |
US11322424B2 (en) * | 2018-03-28 | 2022-05-03 | Mitsubishi Materials Corporation | Insulation circuit board with heat sink |
DE102018207955B4 (de) | 2018-05-22 | 2023-05-17 | Schweizer Electronic Ag | Leiterplattenmodul mit integriertem leistungselektronischen Metall-Keramik-Modul sowie Verfahren zu dessen Herstellung |
CN109509744B (zh) * | 2018-12-19 | 2024-05-28 | 常州瑞华新能源科技有限公司 | 高压功率模块封装结构 |
CN110451935B (zh) * | 2019-09-03 | 2020-12-08 | 长沙华脉新材料有限公司 | 一种金属膜复合型特种陶瓷及其表面金属化工艺 |
DE102019126954A1 (de) * | 2019-10-08 | 2021-04-08 | Rogers Germany Gmbh | Verfahren zur Herstellung eines Metall-Keramik-Substrats, Lötsystem und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren |
DE102020106521A1 (de) * | 2020-03-10 | 2021-09-16 | Rogers Germany Gmbh | Elektronikmodul und Verfahren zur Herstellung eines Elektronikmoduls |
DE102020111697A1 (de) * | 2020-04-29 | 2021-11-04 | Rogers Germany Gmbh | Trägersubstrat und Verfahren zur Herstellung eines Trägersubstrats |
DE102020207703A1 (de) | 2020-06-22 | 2021-12-23 | Zf Friedrichshafen Ag | Leistungsmodul zum Betreiben eines Elektroantriebs für ein Fahrzeug und Verfahren zum Herstellen eines deratigen Leistungsmoduls |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5903583A (en) * | 1995-02-22 | 1999-05-11 | Ullman; Christoph | Diode laser component with cooling element and diode laser module |
CN1256514A (zh) * | 1998-12-10 | 2000-06-14 | 株式会社东芝 | 绝缘衬底、其制作方法及具有绝缘衬底的模块半导体器件 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2213115C3 (de) | 1972-03-17 | 1975-12-04 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum hochfesten Verbinden von Keramiken aus Karbiden, einschließlich des Diamanten, Boriden, Nitriden oder Suiziden mit Metall nach dem Trocken-Lötverfahren |
US3766634A (en) | 1972-04-20 | 1973-10-23 | Gen Electric | Method of direct bonding metals to non-metallic substrates |
US3744120A (en) | 1972-04-20 | 1973-07-10 | Gen Electric | Direct bonding of metals with a metal-gas eutectic |
JPH0810710B2 (ja) | 1984-02-24 | 1996-01-31 | 株式会社東芝 | 良熱伝導性基板の製造方法 |
US5191174A (en) * | 1990-08-01 | 1993-03-02 | International Business Machines Corporation | High density circuit board and method of making same |
AU2003213841A1 (en) * | 2002-03-11 | 2003-09-29 | Liquidmetal Technologies | Encapsulated ceramic armor |
DE102004033933B4 (de) * | 2004-07-08 | 2009-11-05 | Electrovac Ag | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
DE102009041574A1 (de) | 2008-10-29 | 2010-05-12 | Electrovac Ag | Verbundmaterial, Verfahren zum Herstellen eines Verbundmaterials sowie Kleber oder Bondmaterial |
-
2010
- 2010-10-27 DE DE102010049499.2A patent/DE102010049499B4/de active Active
-
2011
- 2011-10-13 EP EP11008249A patent/EP2447235A1/de not_active Withdrawn
- 2011-10-20 JP JP2011230885A patent/JP6168268B2/ja active Active
- 2011-10-24 US US13/279,701 patent/US8974914B2/en active Active
- 2011-10-27 CN CN201110330450.3A patent/CN102458043B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5903583A (en) * | 1995-02-22 | 1999-05-11 | Ullman; Christoph | Diode laser component with cooling element and diode laser module |
CN1256514A (zh) * | 1998-12-10 | 2000-06-14 | 株式会社东芝 | 绝缘衬底、其制作方法及具有绝缘衬底的模块半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
JP6168268B2 (ja) | 2017-07-26 |
US20120107642A1 (en) | 2012-05-03 |
CN102458043A (zh) | 2012-05-16 |
JP2012094867A (ja) | 2012-05-17 |
US8974914B2 (en) | 2015-03-10 |
EP2447235A1 (de) | 2012-05-02 |
DE102010049499B4 (de) | 2014-04-10 |
DE102010049499A1 (de) | 2012-05-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102458043B (zh) | 金属陶瓷基片以及用于制造这种基片的方法 | |
Schulz-Harder | Advantages and new development of direct bonded copper substrates | |
US7285730B2 (en) | Ceramic circuit board and method for manufacturing the same | |
US8563869B2 (en) | Circuit board and semiconductor module using this, production method for circuit board | |
JP2003273289A (ja) | セラミックス回路基板およびパワーモジュール | |
CN104106153A (zh) | 热电的发电模块、金属-陶瓷基体以及用于制造金属-陶瓷基体的方法 | |
CN106576423A (zh) | 具有导热元件的电路载体 | |
US11807584B2 (en) | Metal-ceramic substrate and method for producing a metal-ceramic substrate | |
JP2013531370A (ja) | 熱電素子 | |
JP2022501827A (ja) | 電気部品用、特に電子部品用のキャリア基板およびキャリア基板の製造方法 | |
JP5144657B2 (ja) | 積層型放熱基体およびこれを用いた放熱ユニット並びに電子装置 | |
KR102396987B1 (ko) | 금속 세라믹 기판 및 금속 세라믹 기판의 제조 방법 | |
EP3761764A1 (en) | Insulating circuit board | |
US20020125505A1 (en) | Substrate for an electronic power circuit, and an electronic power module using such a substrate | |
CN109511213A (zh) | 布线基板和平面变压器 | |
JP7314413B2 (ja) | 金属セラミック基板および該金属セラミック基板の製造方法 | |
US20220295641A1 (en) | Method for producing a metal-ceramic substrate, and metal-ceramic substrate produced using such a method | |
JP3783493B2 (ja) | 積層セラミック基板及びこれを用いたパワーモジュール用基板 | |
CN109716877A (zh) | 电子组件、尤其是用于混合动力车或者电动车的电子的功率组件 | |
KR102050138B1 (ko) | 전극층/절연층 다층기판 및 그 제조방법과 이를 포함한 열전발전 모듈 | |
JP2013247158A (ja) | セラミックス回路基板 | |
JP2019153670A (ja) | 絶縁回路基板 | |
JP2013084885A (ja) | プローブカード用配線基板およびそれを用いたプローブカード | |
JP2000312057A (ja) | 配線基板およびその製造方法 | |
EP2315242A1 (en) | Circuit arrangement and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |