JP6168152B2 - 電力用半導体モジュール - Google Patents
電力用半導体モジュール Download PDFInfo
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- JP6168152B2 JP6168152B2 JP2015535392A JP2015535392A JP6168152B2 JP 6168152 B2 JP6168152 B2 JP 6168152B2 JP 2015535392 A JP2015535392 A JP 2015535392A JP 2015535392 A JP2015535392 A JP 2015535392A JP 6168152 B2 JP6168152 B2 JP 6168152B2
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- fins
- wiring board
- heat dissipation
- power semiconductor
- semiconductor module
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- 239000004065 semiconductor Substances 0.000 title claims description 68
- 230000017525 heat dissipation Effects 0.000 claims description 53
- 230000003014 reinforcing effect Effects 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 229910000679 solder Inorganic materials 0.000 claims description 21
- 239000002826 coolant Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 32
- 230000000052 comparative effect Effects 0.000 description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000008646 thermal stress Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000000110 cooling liquid Substances 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009497 press forging Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Description
また、前記補強フィンは、前記絶縁配線基板の下方であって、かつ、前記絶縁配線基板の1辺の長さをA、前記絶縁配線基板の端から前記補強フィンまでの距離をBとしたとき、B/Aの比率が百分率で20%以下の位置にあるものを含むことが好ましい。
また、前記補強フィンは、前記絶縁配線基板の下方であって、かつ、前記絶縁性基板の対向する両側辺から前記距離Bをおいて内側に位置する少なくとも一対のものを含むことが好ましい。
前述したように、フィンベース10は、放熱基板10aの下面に一端を接合されて取付けられたフィン10bおよび補強フィン10cを有している。フィン10bは、放熱基板10aから離れた他端が自由端となっており、補強フィン10cは、放熱基板10aから離れた他端がウォータージャケット11に接合されている。
従来は、すべてのフィンが、フィンベース10から離れた他端が自由端となっていた。しかし、上記従来の態様では、熱抵抗を低減し半導体素子4の接合温度Tjを下げる目的で、フィンの一端側を固定している放熱基板10aを薄くした場合、フィンベース10が変形し易くなってモジュール全体の反りが増大し、放熱基板10aと絶縁配線基板1とを接合しているはんだ層9に熱応力が集中し易くなる。このはんだ層9に熱応力が集中すると、はんだ層9にクラックが入るなどの問題が生じ、接合面の破断に至る恐れが生じるという問題があった。
本発明では、複数のフィンのうち、少なくとも一部のフィンの自由端(他端側)をウォータージャケット11に接合して補強フィン10cとすることにより、フィンベース10の変形によるモジュール全体の反りを抑制し、はんだ層9にクラックが入るなどの問題を回避できるようにした。
本発明では、すべてのフィンの他端をウォータージャケット11に接合し固定して補強フィン10cとすることもできるが、その場合には、圧力損失が上昇するデメリットが発生する。したがって、フィンの一部を補強フィン10cとし、他のフィン10bは、放熱基板10aから離れた他端が自由端となっていることが好ましい。
そして、絶縁配線基板1の下側に位置するフィンのうちの一部の他端をウォータージャケット11に接合して補強フィン10cにする。補強フィン10cの他端は、ウォータージャケット11に接合された領域と、自由端の領域とを備えることにしてもよい。自由端の領域が広い程、冷却液が通流する際の圧力損失が少なくなるため、冷却液を送液するポンプの負荷を低減できる。
ΔεpNf b=C(Δεp:塑性ひずみ振幅、Nf:疲労寿命、bおよびC:材料による定数)
したがって、疲労寿命を延ばすためには、前記マンソン−コフィン則から塑性ひずみ振幅を小さくすれば良いことが分かる。
表1における実験例1〜3および比較実験例4は、絶縁配線基板1の端から補強フィン10cまでの距離Bがそれぞれ異なる。実験例1〜3は、本発明の効果がより良好に得られる実験例である。実験例1〜3の補強フィン10cの位置は、絶縁配線基板1の下方にあって、前記距離Bが、絶縁配線基板1の1辺の長さをAに対して、比率B/Aの百分率で20%以下となっている。
一方、比較実験例4では、補強フィン10cの位置は、絶縁配線基板1の下方にあるが、比率B/Aの百分率で、20%を超える50%となっている。
表1における比較実験例1は、図2に示すように、全てのフィンが自由端を有するフィン10bとなっていて、補強フィン10cを有さない例である。
一方、表1における比較実験例2、3(図示せず)は、補強フィン10cの位置が実験例1〜3および比較実験例4とは異なり、絶縁配線基板1の下方には無い場合で、絶縁配線基板1の下方から離れたところに設けられている場合である。表1および図4では、そのような絶縁配線基板1の端からの距離BおよびB/Aの百分率にマイナス(−)記号を付けて示した。
各実験例1〜3および比較実験例2〜4について、塑性ひずみ振幅の比率を□で、反り量の比率を■で表している。
比較実験例4は、比較実験例1と比べて反り量は66%とそれなりに小さくなっているが、塑性ひずみ振幅は99%とほとんど同じである。
なお、比較実験例2,3,4においても、補強フィンを設けない比較実験例1に比べると、反り量は低減されており、本発明の効果がある程度は達成されるものである。
なお、実験例1〜3及び比較実験例2〜4では、補強フィン10cは、各絶縁配線基板1の対向する両側辺に近接して一対ずつ設けられている。このように、本発明では、補強フィン10cは、少なくとも、絶縁配線基板1の対向する両側辺に近接して一対ずつ設けられていることが好ましい。
2:ケース
3:ホンディングワイヤー
4:半導体素子
5:はんだ層
6:金属回路配線層
7:絶縁性薄板
8:金属層
9:はんだ層
10:フィンベース
10a:放熱基板
10b:フィン
10c:補強フィン
11:ウォータージャケット
12:外部導出用電極端子
100:電力用半導体モジュール
Claims (3)
- 絶縁配線基板と、該絶縁配線基板の一方の主面上に搭載された半導体素子と、該絶縁配線基板の他方の主面にはんだ層を介して接合された放熱基板と、該放熱基板の他方の主面に一端が固定され他端が自由端の複数のフィンと、該複数のフィンを収容し該フィン間に冷却液を流動させるためのウォータージャケットとを備える電力用半導体モジュールにおいて、
前記複数のフィンの一部の前記他端が、前記ウォータージャケットに接合されて補強フィンにされており、
前記補強フィンは、前記絶縁配線基板の下方であって、かつ、前記絶縁配線基板の1辺の長さをA、前記絶縁配線基板の端から前記補強フィンまでの距離をBとしたとき、B/Aの比率が百分率で20%以下の位置にあるものを、前記絶縁配線基板の対向する両側辺に近接して少なくとも一対含み、前記一対の前記補強フィンの間は他端が自由端の前記フィンのみ配置されていることを特徴とする電力用半導体モジュール。 - 前記絶縁配線基板が、絶縁性薄板と、該絶縁性薄板の一方の主面に接合される金属回路配線層と、他方の主面に接合される金属層とを備えることを特徴とする請求項1に記載の電力用半導体モジュール。
- 前記補強フィンの前記他端は、前記ウォータージャケットに接合された領域と、自由端の領域とを備えることを特徴とする請求項1又は2に記載の電力用半導体モジュール。
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