JP6115172B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6115172B2 JP6115172B2 JP2013027960A JP2013027960A JP6115172B2 JP 6115172 B2 JP6115172 B2 JP 6115172B2 JP 2013027960 A JP2013027960 A JP 2013027960A JP 2013027960 A JP2013027960 A JP 2013027960A JP 6115172 B2 JP6115172 B2 JP 6115172B2
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- 239000004065 semiconductor Substances 0.000 title claims description 64
- 229920005989 resin Polymers 0.000 claims description 164
- 239000011347 resin Substances 0.000 claims description 164
- 238000007789 sealing Methods 0.000 claims description 23
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 5
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 5
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 claims description 3
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- 239000003822 epoxy resin Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
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- 229920002050 silicone resin Polymers 0.000 claims description 2
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- 238000001721 transfer moulding Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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Description
この半導体装置は、少なくとも一個の半導体素子が搭載された絶縁回路基板と、該絶縁回路基板が取り付けられた底面部及び該底面部の周りを囲む側面部を有する樹脂ケースと、該樹脂ケースと一体的に成型され、該樹脂ケース内の底面部の表面に位置するように該絶縁回路基板の周囲に並列に設けられるとともに、該樹脂ケース内から樹脂ケース外へ前記側面部を貫通して延びるリードと、該樹脂ケース内に充填された封止樹脂と、を備え、前記リードの上面と前記底面部の表面とが同一面になっており、前記底面部と前記側面部との境に沿って、該リードの両側に、それぞれ凹部が形成され、前記凹部に前記封止樹脂が入り込み、固化している。
本発明の一実施形態の半導体装置10を図1に平面図で、図2に図1のII−II線で切断した断面図で示す。本発明の一実施形態の半導体装置10は、パワー半導体モジュールとして構成されたものであり、複数の半導体素子11A、11Bが、絶縁回路基板12上に搭載されている。半導体素子11A、11Bは、それぞれIGBT(絶縁ゲートバイポーラトランジスタ;Insulated Gate Bipolar Transistor)及びFWD(フリーホイーリングダイオード;Free Wheeling Diode)である。
このリード14は、金型を用いたトランスファー成型によって樹脂ケース13内の底面部13aの表面と同一平面上に位置するように樹脂ケース13と一体的に成型されている。図3に、リードフレーム15を一体成型された樹脂ケース13を示す。リードフレーム15のリード14の一部は樹脂ケース13の側面部13bを貫通して樹脂ケース13内から樹脂ケース13外まで延出している。リードフレーム15は金型にセットされ、トランスファー成型により樹脂ケース13と一体成型される。リードフレーム15のタイバー15aは、成型後に切除される。
また、半導体素子11A、11Bにより構成される主回路を制御するための制御回路チップ16A、16Bがリード14上に設けられている。
図7に、図1のVII部分の拡大図を示す。リード14上に、複数の制御回路チップ16Aが隣接して設けられている場合に、これらの制御回路チップ16の間の部分のリード14の幅は、制御回路チップ16が搭載されている部分のリード14の幅よりも狭くなっている。制御回路チップ16間のリード14の幅が狭くなっていることにより、リード14の幅を狭くしない場合に比べて、樹脂ケース13の底面部13aとリード14との密着性を向上させることができ、ひいては半導体装置10の信頼性を向上させることができる。
図8は、リード14の延伸方向に垂直な方向で切断した模式的な断面図である。リード14は金属箔を打ち抜き加工することによって製造される。この打ち抜き加工によって、リード14は台形断面を有している。上辺が下辺よりも小さい台形断面のリード14の上辺を樹脂ケース13の底面部13aの表面に位置させている。このことによりリード14が樹脂ケース13の底面部13aから抜け難くなり、リード14と樹脂ケース13との密着性を向上させることができる。
また、図9は、樹脂ケース13内の底面部13aの周縁に沿って形成した凹部18を含むように、リード14の延伸方向に垂直な方向で切断した模式的な断面図である。リード14は同様に台形断面を有している。
図9(a)に示すように、リード14の両側の傾斜面はリード14と凹部18の間の樹脂ケース13により覆われている。樹脂ケース13の樹脂を挟んで、封止樹脂17をリード14の側面に密着させることにより、リード14と樹脂ケース13のすき間を通した水分の侵入をさらに防止できる。封止樹脂17とリード14の密着性が小さいときに効果的である。なお、図9(a)では、一つのリード14の両側に接するように2つの凹部18が形成され、隣り合うリード14との間で一方の凹部18を共用している。図9(b)に示すように、リード14ごとに、リード14の両側に接するように凹部18を形成し、リード14の間に複数の凹部18が配置されるようにしてもよい。隣り合うリード14が離れている場合に、樹脂ケース13と封止樹脂17の密着性を向上させることができる。また、図9では、凹部18はリード14の両側に接するように形成されているが、リード14の少なくとも一方の側にのみ接するように配置されてもよい。
11A、11B 半導体素子
12 絶縁回路基板
13 樹脂ケース
14 リード
15 リードフレーム
16A、16B 制御回路チップ
17 封止樹脂
18、20 凹部
19 係止部材
Claims (11)
- 少なくとも一個の半導体素子が搭載された絶縁回路基板と、
該絶縁回路基板が取り付けられた底面部及び該底面部の周りを囲む側面部を有する樹脂ケースと、
該樹脂ケースと一体的に成型され、該樹脂ケース内の底面部の表面に位置するように該絶縁回路基板の周囲に並列に設けられるとともに、該樹脂ケース内から樹脂ケース外へ前記側面部を貫通して延びるリードと、
該樹脂ケース内に充填された封止樹脂と、
を備え、
前記リードの上面と前記底面部の表面とが同一面になっており、前記底面部と前記側面部との境に沿って、該リードの両側に、それぞれ凹部が形成され、前記凹部に前記封止樹脂が入り込み、固化していることを特徴とする半導体装置。 - 少なくとも一個の半導体素子が搭載される絶縁回路基板と、
該絶縁回路基板が取り付けられる底面部及び該底面部の周りを囲む側面部を有する樹脂ケースと、
該樹脂ケースと一体的に成型され、該樹脂ケース内の底面部の表面と同一平面上に位置するように該絶縁回路基板の周囲に並列に設けられるとともに、該樹脂ケース内から樹脂ケース外へ前記側面部を貫通して延びるリードと、
該樹脂ケース内に充填される封止樹脂と、
を備え、
前記リードの上面と前記底面部の表面とが同一面になっており、前記底面部と前記側面部との境に沿って、該リードの両側に、それぞれ凹部が形成され、前記凹部に前記封止樹脂が入り込み、固化していて、かつ、該凹部とは別の位置に該リードの延伸方向に沿って係止部材が設けられていることを特徴とする半導体装置。 - 前記係止部材が、前記リードの側部から該リードの上面にかけて形成された突起物である請求項2記載の半導体装置。
- 前記係止部材が、前記樹脂ケースと同一材料からなり、該樹脂ケースと一体成型されてなる請求項2又は3記載の半導体装置。
- 前記樹脂ケース内の底面部の周縁に沿って設けられた凹部とは別の位置で、前記リードの延伸方向に沿って側部に凹部が形成されている請求項1〜4のいずれか1項記載の半導体装置。
- 前記リードの側部に形成された凹部が、並列に延びる複数のリードの延伸方向に沿って千鳥配置になる請求項5記載の半導体装置。
- 前記リードの側部に形成された凹部が、成型金型のピン跡である請求項5記載の半導体装置。
- 前記リードが制御回路チップが搭載される部分を含み、当該制御回路チップが搭載された部分のリードの幅よりも当該部分の間のリードの幅が狭い請求項1〜7のいずれか1項に記載の半導体装置。
- 前記リードが、延伸方向に垂直な断面において、上辺が下辺よりも小さい台形形状を有し、この上辺を樹脂ケースの底面部の表面に位置させてなる請求項1〜8のいずれか1項に記載の半導体装置。
- 前記樹脂ケースが、ポリフェニレンサルファイド樹脂、ポリブチレンテレフタレート樹脂、ポリアミド樹脂及びアクリロニトリルブタジエンスチレン樹脂から選ばれる1種の樹脂よりなる請求項1〜9のいずれか1項に記載の半導体装置。
- 前記封止樹脂が、エポキシ樹脂、シリコーン樹脂またはウレタン樹脂からなる請求項1〜10のいずれか1項に記載の半導体装置。
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